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    • 11. 发明专利
    • Opening method of semiconductor package and inspection method of semiconductor package
    • 半导体封装的开放方法和半导体封装的检查方法
    • JP2013008875A
    • 2013-01-10
    • JP2011141105
    • 2011-06-24
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • OTA KOJI
    • H01L21/56
    • H01L2224/16227H01L2224/26175H01L2224/32225H01L2224/73204H01L2224/92125
    • PROBLEM TO BE SOLVED: To provide an opening method of a semiconductor package which reduces damage to a semiconductor element and wiring and opens the semiconductor package in a state that an electric inspection for operating the semiconductor element can be conducted.SOLUTION: An opening method of a semiconductor package, which removes a sealing resin 5, includes the steps of: preparing the semiconductor package in which a semiconductor element 3 is mounted on a printed board 4 through a flip chip mounting method and sealed by the sealing resin 5; placing a first plate 1 on an outer surface of the printed board 4 and placing a second plate 2 on an outer surface of the semiconductor element 3 so that the first plate 1 and the second plate 2 face each other to sandwich the semiconductor package therebetween; applying a load to an area between the first plate 1 and the second plate 2 to fix the semiconductor package; and providing a process liquid for dissolving the sealing resin 5, to the fixed semiconductor package.
    • 要解决的问题:为了提供半导体封装的打开方法,其可以在可以进行用于操作半导体元件的电检查的状态下减少对半导体元件和布线的损坏并打开半导体封装。 解决方案:去除密封树脂5的半导体封装的打开方法包括以下步骤:通过倒装芯片安装方法制备其中将半导体元件3安装在印刷电路板4上的半导体封装,并将其密封 通过密封树脂5; 将第一板1放置在印刷电路板4的外表面上,并将第二板2放置在半导体元件3的外表面上,使得第一板1和第二板2彼此面对以将半导体封装夹在其间; 对第一板1和第二板2之间的区域施加负载以固定半导体封装; 并提供用于将密封树脂5溶解的工艺液体固定在半导体封装体上。 版权所有(C)2013,JPO&INPIT
    • 12. 发明专利
    • Cleaning fluid and method for polishing substrate
    • 清洗流体和抛光衬底的方法
    • JP2013008751A
    • 2013-01-10
    • JP2011138864
    • 2011-06-22
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • HANANO MASAYUKIYAMAMURA NAOOTA MUNEHIROENOMOTO KAZUHIROSHINODA TAKASHI
    • H01L21/304B24B37/00
    • PROBLEM TO BE SOLVED: To provide a cleaning fluid which can remove contamination without roughing the substrate surface obtained after undergoing the CMP process using a polishing solution including a 4-pyrone-based compound and a ceria abrasive particle; and a method for polishing the substrate using the cleaning fluid.SOLUTION: A cleaning fluid for cleaning a substrate after the CMP treatment is composed to include an anionic surfactant, water and a pH conditioner. A method for polishing a substrate comprises a polishing process of removing at least a portion of a polished film by polishing a substrate having the polished film using a CMP polishing solution including a 4-pyrone-based compound and a ceria abrasive particle, and a cleaning process of applying the cleaning fluid onto the surface on the side of the substrate in which at least a portion of the polished film is removed so as to clean the surface.
    • 要解决的问题:提供一种可以在使用包括4-吡喃酮基化合物和二氧化铈磨料颗粒的抛光溶液在经历CMP处理之后获得的基材表面粗糙化的情况下除去污染物的清洗液; 以及使用清洗液对基板进行研磨的方法。 解决方案:在CMP处理之后用于清洁基底的清洁液被构成为包括阴离子表面活性剂,水和pH调节剂。 抛光基材的方法包括通过使用包括4-吡喃酮基化合物和二氧化铈磨料颗粒的CMP抛光溶液抛光具有抛光膜的基材来除去至少一部分抛光膜的抛光工艺,以及清洁 将清洁流体施加到基材侧的表面上,其中去除至少一部分抛光膜以清洁表面。 版权所有(C)2013,JPO&INPIT
    • 13. 发明专利
    • Method of manufacturing semiconductor device, film glue, and adhesive sheet
    • 制造半导体器件,薄膜玻璃和粘合片的方法
    • JP2013004872A
    • 2013-01-07
    • JP2011136574
    • 2011-06-20
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • OKUBO KEISUKENAGAI AKIRAHONDA KAZUTAKAENOMOTO TETSUYASATO SHIN
    • H01L21/301C09J7/02C09J201/00H01L21/304H01L21/56H01L21/60
    • H01L2224/16225H01L2224/32225H01L2224/73104H01L2224/73204H01L2224/83191H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of sufficiently reducing voids at a bump portion and improving productivity in manufacturing a semiconductor device by a flip chip mounting.SOLUTION: The method of manufacturing a semiconductor device includes: a step for pasting a film glue whose slip viscosity at lamination temperature is 6000 Pa*s or less to a functional surface of a semiconductor wafer having the functional surface on which a solder bump is formed, by vacuum lamination, to provide a semiconductor wafer with an adhesive layer; a step for reducing the thickness of the semiconductor wafer by grinding a surface that is on the side opposite to the functional surface of the semiconductor wafer with an adhesive layer; a step for cutting the semiconductor wafer whose thickness has been reduced, along with the adhesive layer into a plurality of semiconductor elements, to provide a semiconductor element with an adhesive layer; and a step for press-fitting the semiconductor element with an adhesive layer and another semiconductor element or a support member for mounting the semiconductor element together with the adhesive layer of the semiconductor element with an adhesive layer in between.
    • 要解决的问题:提供一种制造能够充分减少凸起部分的空隙的半导体器件的方法,并且通过倒装芯片安装来提高制造半导体器件的生产率。 解决方案:制造半导体器件的方法包括:将层压温度为6000Pa * s以​​下的滑移粘度的膜胶粘贴到具有焊料功能面的半导体晶片的功能面上的步骤 通过真空层压形成凸块,以提供具有粘合剂层的半导体晶片; 通过用粘合剂层研磨与半导体晶片的功能表面相反的一侧的表面来减小半导体晶片的厚度的步骤; 将其厚度减小的半导体晶片与粘合剂层一起切割成多个半导体元件的步骤,以提供具有粘合剂层的半导体元件; 以及用于将半导体元件用粘合剂层和另一半导体元件或用于将半导体元件的粘合剂层与半导体元件的粘合剂层一起用于将半导体元件与其间的粘合剂层一起安装的支撑部件的步骤。 版权所有(C)2013,JPO&INPIT
    • 14. 发明专利
    • Manufacturing method of semiconductor chip with adhesive layer and manufacturing method of semiconductor device
    • 具有粘合层的半导体芯片的制造方法和半导体器件的制造方法
    • JP2013004811A
    • 2013-01-07
    • JP2011135615
    • 2011-06-17
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • KAWAMORI TAKASHIOZAKI YOSHINOBUHATAKEYAMA KEIICHIMASUKO TAKASHI
    • H01L21/52H01L21/301
    • H01L24/27H01L2224/83191H01L2924/15747H01L2924/15788H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor chip with an adhesive layer capable of easily forming a semiconductor chip with an adhesive layer having a shape suitable for semiconductor chip mounting.SOLUTION: A manufacturing method of a semiconductor chip with an adhesive layer according to one embodiment comprises: a sticking step of sticking a plurality of semiconductor chips 27 arranged at intervals to an adhesive film 110 containing a photocurable component; an exposure step of irradiating the adhesive film 110 and a self-adhesive film 120 containing the photocurable component with light via the semiconductor chip 27 with the self-adhesive film 120 arranged on the opposite side the semiconductor chip 27 and with the adhesive film 110 sandwiched between the self-adhesive film 120 and the semiconductor chip 27; and picking up the semiconductor chip 27 to which the adhesive film 110 is attached after the exposure step.
    • 要解决的问题:提供具有能够容易地形成具有适于半导体芯片安装的形状的粘合剂层的半导体芯片的粘合剂层的半导体芯片的制造方法。 解决方案:根据一个实施方案的具有粘合剂层的半导体芯片的制造方法包括:将多个半导体芯片27粘贴到包含可光固化部件的粘合膜110上的粘贴步骤; 曝光步骤,通过半导体芯片27将包含光固化性成分的自粘合膜120和自粘合膜120配置在半导体芯片27的相反侧并且粘合膜110夹在中间 在自粘膜120和半导体芯片27之间; 并且在曝光步骤之后拾取附着有粘合膜110的半导体芯片27。 版权所有(C)2013,JPO&INPIT
    • 15. 发明专利
    • Photosensitive resin composition and photosensitive film using the same
    • 光敏树脂组合物和使用它的感光膜
    • JP2013003509A
    • 2013-01-07
    • JP2011137266
    • 2011-06-21
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • OZAWA KYOKO
    • G03F7/031C07C49/84C08F2/48G03F7/004G03F7/027G03F7/038H05K3/28
    • PROBLEM TO BE SOLVED: To provide a photosensitive resin composition having high sensitivity and excellent flexibility, plating property and heat resistance, and to provide a photosensitive film using the composition.SOLUTION: The photosensitive resin composition comprises (A) a polymerizable prepolymer having a carboxyl group and an ethylenically unsaturated group, (B) a photopolymerization initiator generating a free radical by active rays, (C) a black pigment or a dispersion of a black pigment, (D) a thermoplastic polymer having a carboxyl group, (E) an urethane unsaturated organooligomer, and (F) a photopolymerizable compound. For the photopolymerization initiator as the component (B) generating a free radical by active rays, a combination of two or more in the following compounds is used: (B)-(1) 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1; (B)-(2) 2,2-dimethoxy-1,2-diphenylethan-1-one; and (B)-(3) ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-,1-(0-acetyloxime).
    • 解决问题:提供具有高灵敏度和优异的柔韧性,电镀性能和耐热性的感光性树脂组合物,并提供使用该组合物的感光膜。 光敏树脂组合物包含(A)具有羧基和烯属不饱和基团的聚合预聚物,(B)通过活性射线产生自由基的光聚合引发剂,(C)黑色颜料或分散体 黑色颜料,(D)具有羧基的热塑性聚合物,(E)氨基甲酸酯不饱和醇低聚物,(F)光聚合性化合物。 对于作为通过活性射线产生自由基的组分(B)的光聚合引发剂,使用以下化合物中的两种或更多种的组合:(B) - (1)2-苄基-2-二甲基氨基-1-(4 - 吗啉代苯基) - 丁酮-1; (B) - (2)2,2-二甲氧基-1,2-二苯基乙酮-1-酮; 和(B) - (3)乙酮,1- [9-乙基-6-(2-甲基苯甲酰基)-9H-咔唑-3-基] - ,1-(O-乙酰肟)。 版权所有(C)2013,JPO&INPIT
    • 18. 发明专利
    • Optical waveguide with mirror and method of manufacturing the same
    • 具有镜面的光波导及其制造方法
    • JP2012247671A
    • 2012-12-13
    • JP2011120186
    • 2011-05-30
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • SAKAI DAICHIKURODA TOSHIHIRO
    • G02B6/122
    • PROBLEM TO BE SOLVED: To provide an optical waveguide with a mirror in which an optical element can be disposed on each of front and back surfaces of the optical waveguide, thereby allowing an increase in number of the optical elements to be disposed.SOLUTION: An optical waveguide 5 with a mirror includes: a lower cladding layer 2; a plurality of rod-shaped cores 3a to 3d arranged in parallel on the lower cladding layer 2 and spaced apart from each other; and a plurality of mirror surfaces 6 and 6A for performing optical path conversion of an optical signal passing through the plurality of rod-shaped cores 3a to 3d. The plurality of mirror surfaces 6 and 6A include a front-surface communication mirror surface 6A and a back-surface communication mirror surface 6 that are inclined toward the front surface and the back surface, respectively, of the optical waveguide 5 with a mirror in the long-side direction of each of the cores 3a to 3d, thereby allowing transmission and reception of the optical signal between the plurality of rod-shaped cores 3a to 3d and each of the front and back surfaces of the optical waveguide 5 with a mirror.
    • 要解决的问题:为了提供一种具有镜子的光波导,其中光学元件可以设置在光波导的前表面和后表面中的每一个上,从而允许增加待配置的光学元件的数量。 具有反射镜的光波导5包括:下包层2; 多个在下包层2上平行设置且彼此间隔开的棒状芯3a至3d; 以及用于对通过多个棒状铁芯3a至3d的光信号进行光路转换的多个镜面6和6A。 多个镜面6和6A包括分别朝向光波导5的前表面和后表面倾斜的前表面连通镜表面6A和背表面连通镜表面6,其中反射镜 每个芯3a至3d的长边方向,从而允许利用反射镜在多个棒状芯3a至3d之间以及光波导5的每个前表面和后表面之间发送和接收光信号。 版权所有(C)2013,JPO&INPIT
    • 19. 发明专利
    • Measuring method of hardening rate of dimming film, manufacturing method for dimming film, and dimming film
    • 调色膜硬化速度的测量方法,调制膜的制造方法和调色膜
    • JP2012242224A
    • 2012-12-10
    • JP2011111828
    • 2011-05-18
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • NOMURA MICHIYUKIMORISHITA YOSHIIKAMIYA YUKIO
    • G02F1/17G01N21/3559G01N21/3563G01N21/359G02F1/19
    • PROBLEM TO BE SOLVED: To provide a measuring method of a hardening rate of a resin matrix in a dimming film having excellent swiftness and simplicity.SOLUTION: A method for measuring a hardening rate of a resin matrix by near-infrared spectroscopy in a dimming film is provided. The dimming film is formed by clamping a dimming layer between two transparent conductive resin substrates, the dimming layer including the resin matrix which is a hardened material of a polymer medium, and a light adjusting suspension dispersed in the resin matrix. When interference fringes are formed by transmitting the near-infrared light to the dimming film, the near-infrared spectrum is measured using a second dimming film including two transparent conductive resin substrates satisfying the following expression (I). The expression (I): (Ry)≥λ×1/2, where (Ry) is the maximum height of the surface roughness in the irradiation area of the near-infrared light and λ is the wavelength of the interference fringe.
    • 要解决的问题:提供一种具有优异的快速性和简单性的调光膜中的树脂基体的硬化率的测量方法。 解决方案:提供了一种在调光膜中通过近红外光谱测量树脂基质的硬化率的方法。 调光膜通过在两个透明导电树脂基板之间夹持调光层而形成,该调光层包括作为聚合物介质的硬化材料的树脂基体的调光层和分散在树脂基体中的调光悬浮液。 当通过将近红外光透射到调光膜形成干涉条纹时,使用包括满足以下表达式(I)的两个透明导电树脂基板的第二调光膜来测量近红外光谱。 表达式(I):(Ry)≥λ×1/2,其中(Ry)是近红外光的照射区域中的表面粗糙度的最大高度,λ是干涉条纹的波长。 版权所有(C)2013,JPO&INPIT
    • 20. 发明专利
    • Wafer processing tape
    • 波纹加工带
    • JP2012238765A
    • 2012-12-06
    • JP2011107521
    • 2011-05-12
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • SUZUMURA KOJIYOSHIDA KEIKOIWANAGA YUKIHIRO
    • H01L21/301C09J7/02C09J11/06C09J133/00
    • PROBLEM TO BE SOLVED: To provide a wafer processing tape that has an excellent dicing property and an excellent expanding property, and can be manufactured inexpensively.SOLUTION: A dicing/die-bonding integral tape 1 that is a wafer processing tape comprises a substrate layer 2 forming a base of a tape, a sticking layer 3 provided on one face 2a of the substrate layer 2, and an adhesion layer 4 provided on the sticking layer 3. The substrate layer 2 is made of a material such that B is 270% or more and B/A is 0.5 or more and 0.9 or less when a fracture elongation rate before radiating ultraviolet ray is A and a fracture elongation rate after radiating the ultraviolet ray is B. The fracture elongation rate on one face 2a side of the substrate layer 2 is lower than the fracture elongation rate on the other face 2b side by radiation of the ultraviolet ray on the face 2a. In this manner, the fracture elongation rate on the face 2a side is made low and the fracture elongation rate on the other face 2b side is made high, so that both of a dicing property and an expanding property can be provided.
    • 解决的问题:提供具有优异的切割性和优异的膨胀性的晶片加工带,并且可以廉价地制造。 解决方案:作为晶片处理带的切割/芯片结合整体带1包括形成带的基底的基底层2,设置在基底层2的一个表面2a上的粘着层3和粘附 设置在粘贴层3上的基板层2,当辐射紫外线的断裂伸长率为A时,基板层2由B为270%以上且B / A为0.5以上0.9以下的材料构成, 照射紫外线后的断裂伸长率为B.基板层2的一个面2a侧的断裂伸长率比通过面2a上的紫外线的照射而在另一面2b侧的断裂伸长率低。 以这种方式,使面2a侧的断裂伸长率变低,并且使另一个面2b侧的断裂伸长率变高,从而可以提供切割性和膨胀性。 版权所有(C)2013,JPO&INPIT