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    • 1. 发明专利
    • Semiconductor device manufacturing method, semiconductor wafer with adhesive layer manufacturing method, semiconductor wafer with semiconductor element manufacturing method and semiconductor wafer laminate manufacturing method
    • 半导体器件制造方法,具有粘合层制造方法的半导体波导,具有半导体元件制造方法和半导体波导层压制造方法的半导体器件
    • JP2012238703A
    • 2012-12-06
    • JP2011106341
    • 2011-05-11
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • OKUBO KEISUKENAGAI AKIRAHONDA KAZUTAKAENOMOTO TETSUYAMITSUKURA KAZUYUKI
    • H01L21/60C09J4/00C09J11/06C09J201/00H01L25/065H01L25/07H01L25/18
    • H01L2224/16
    • PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device using a semiconductor wafer with an adhesive layer, which can reduce voids at a bump part and minimize warp after grinding.SOLUTION: A semiconductor device manufacturing method comprises the steps of: obtaining a semiconductor wafer with an adhesive layer having a structure of more than one layer by coating of more than one type of liquid photosensitive adhesive 6, 7 and light irradiation on the coated film, on a circuit surface of a semiconductor wafer 10 having the circuit surface on which metal bumps 12 are formed; obtaining a semiconductor element with a plurality of adhesive layers by cutting the semiconductor wafer with the adhesive layer together with the adhesive layer; and pressure bonding the semiconductor element with the adhesive layer and another semiconductor element or a support member for semiconductor element mounting while sandwiching the adhesive layer of the semiconductor element with the adhesive layer. The adhesive layer having the structure of more than one layer includes an inner layer 7 containing a filler on a circuit surface side and an uppermost surface layer 6 not containing the filler or containing the filler of less content than the inner layer.
    • 要解决的问题:提供一种使用具有粘合剂层的半导体晶片的半导体器件的制造方法,其可以减少凸起部分处的空隙并最小化研磨后的翘曲。 解决方案:半导体器件制造方法包括以下步骤:通过涂覆多于一种类型的液体感光性粘合剂6,7得到具有多于一层结构的粘合剂层的半导体晶片,以及在 在具有形成金属凸块12的电路表面的半导体晶片10的电路表面上; 通过用粘合剂层与粘合剂层一起切割半导体晶片来获得具有多个粘合剂层的半导体元件; 并且将半导体元件与粘合剂层和另一半导体元件或用于半导体元件安装的支撑构件压接,同时用粘合剂层夹持半导体元件的粘合剂层。 具有多层结构的粘合剂层包括在电路表面侧包含填料的内层7和不含填料或含有比内层含量少的填料的最上层6。 版权所有(C)2013,JPO&INPIT
    • 2. 发明专利
    • Semiconductor device manufacturing method and semiconductor wafer laminate manufacturing method
    • 半导体器件制造方法和半导体陶瓷层压制造方法
    • JP2012238702A
    • 2012-12-06
    • JP2011106331
    • 2011-05-11
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • OKUBO KEISUKENAGAI AKIRAENOMOTO TETSUYAMASUKO TAKASHIMITSUKURA KAZUYUKI
    • H01L25/065H01L21/60H01L25/07H01L25/18
    • H01L2224/73204H01L2924/10253H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor wafer laminate manufacturing method, which can sufficiently reduce voids at a bump part, sufficiently minimize warp after grinding and achieve thinning of a semiconductor device having a structure of laminated plurality of semiconductor elements when the semiconductor device is manufactured from a semiconductor wafer with an adhesive layer.SOLUTION: A semiconductor device manufacturing method of the present invention comprises the steps of: forming a photosensitive adhesive layer by coating a liquid photosensitive adhesive on a circuit surface of a first semiconductor wafer having the circuit surface on which metal bumps are formed; obtaining a semiconductor wafer with an adhesive layer by bringing the photosensitive adhesive layer to a B-stage by light irradiation; obtaining a semiconductor wafer laminate by pressure bonding the semiconductor wafer with the adhesive layer with a second semiconductor wafer while sandwiching the adhesive layer of the semiconductor wafer with the adhesive layer; and cutting the semiconductor wafer laminate into a semiconductor element laminates in each of which semiconductor elements are laminated.
    • 解决问题的方案为了提供能够充分减小凸部的空隙的半导体装置的制造方法和半导体晶片层叠体的制造方法,能够充分地使研磨后的翘曲最小化,并且能够实现具有层叠结构的半导体装置的薄型化 半导体器件由具有粘合剂层的半导体晶片制造时的多个半导体元件。 解决方案:本发明的半导体器件制造方法包括以下步骤:通过在具有形成有金属凸块的电路表面的第一半导体晶片的电路表面上涂覆液体感光性粘合剂来形成感光性粘合剂层; 通过光照射使感光性粘合剂层达到B级,从而获得具有粘合剂层的半导体晶片; 通过利用第二半导体晶片将半导体晶片与粘合剂层压接,同时用粘合剂层夹住半导体晶片的粘合剂层来获得半导体晶片层压体; 并将半导体晶片层叠体切割成半导体元件叠层的半导体元件层叠体。 版权所有(C)2013,JPO&INPIT
    • 3. 发明专利
    • Semiconductor device manufacturing method
    • 半导体器件制造方法
    • JP2012174722A
    • 2012-09-10
    • JP2011032150
    • 2011-02-17
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • NAGAI AKIRAOKUBO KEISUKEENOMOTO TETSUYA
    • H01L21/60
    • H01L24/81H01L2224/16225H01L2224/32225H01L2224/73104H01L2224/73204H01L2224/83191H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can prevent a heating and pressurizing tool from being tainted and improve yield without causing occurrence of failure in a tool protection material preventing connection materials from being adhered to the heating and pressurizing tool when manufacturing the semiconductor device by connecting electronic components.SOLUTION: When a semiconductor device is manufactured by heating and pressurizing a first electronic component 1 by a heating and pressurizing tool 3 with connection materials 4 sandwiched between the first electronic component 1 and a second electronic component 2 which face each other to connect the first electronic component 1 and the second electronic component 2, heating and pressurizing are performed by intervening a tool protection material 5 having a dimension equivalent to that of a heating and pressurizing surface 31 of the heating and pressurizing tool 3 and composed of any one of a metal foil, a silicon chip and a ceramic sheet, between the heating and pressurizing surface 31 of the heating and pressurizing tool 3 and a rear face 13 that is a heated and pressurized surface of the first electronic component 1.
    • 要解决的问题:提供一种能够防止加热加压工具被污染并提高成品率的半导体器件制造方法,而不会导致工具保护材料发生故障,从而防止连接材料粘附到加热和加压 通过连接电子元件制造半导体器件时的工具。 解决方案:当半导体器件通过加热和加压工具3加热和加压第一电子部件1而制造时,连接材料4夹在第一电子部件1和彼此面对的第二电子部件2之间以连接 第一电子部件1和第二电子部件2的加热和加压通过插入具有与加热加压工具3的加热和加压表面31相同的尺寸的工具保护材料5来执行,并由 金属箔,硅芯片和陶瓷片,位于加热加压工具3的加热和加压表面31之间,以及作为第一电子部件1的加热和加压表面的后表面13。 (C)2012,JPO&INPIT