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1. 发明专利

JP2011009732A Dicing tape, dicing tape integrated adhesive sheet, semiconductor device, and method of manufacturing semiconductor device 有权
标题翻译：定位带，定位带集成粘合片，半导体器件及制造半导体器件的方法
公开(公告)号：JP2011009732A
公开(公告)日：2011-01-13
申请号：JP2010121875
申请日：2010-05-27
申请人： Hitachi Chem Co Ltd , 日立化成工業株式会社
发明人： HATAKEYAMA KEIICHI , OZAKI YOSHINOBU , NAKAMURA YUKI , IKETANI TAKUJI
IPC分类号： H01L21/301 , C09J7/02 , H01L21/52
CPC分类号： H01L24/27 , H01L2224/48091 , H01L2224/73265 , H01L2224/83191 , H01L2224/92247 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a dicing tape having sufficient adhesion properties, in which easy pick up of a diced semiconductor chip with a die bonding film is performed, and also to provide die bonding film integrated adhesive sheet provided with the tape, and a semiconductor device and a method of manufacturing the device, using the tape and the sheet.SOLUTION: A dicing tape has a base film on which a first adhesive layer and a second adhesive layer are laminated in order. The area of the first adhesive layer is larger than that of the second adhesive layer. The tack strength of the first adhesive layer is larger than that of the second adhesive layer.
摘要翻译：要解决的问题：为了提供一种具有足够的粘合性能的切割带，其中，利用芯片接合膜进行切割的半导体芯片的容易拾取，并且还提供设置有带的芯片接合膜集成的粘合片，以及半导体器件和使用该带和片材的器件的制造方法。解决方案：切割带具有基膜，顺序层叠有第一粘合层和第二粘合层。第一粘合剂层的面积大于第二粘合剂层的面积。第一粘合剂层的粘着强度大于第二粘合剂层的粘着强度。

2. 发明专利

JP2010001453A Adhesive film, adhesive sheet, semiconductor device and method of producing semiconductor device 审中-公开
标题翻译：粘合膜，粘合片，半导体器件及其半导体器件的制造方法
公开(公告)号：JP2010001453A
公开(公告)日：2010-01-07
申请号：JP2008302965
申请日：2008-11-27
申请人： Hitachi Chem Co Ltd , 日立化成工業株式会社
发明人： MIYAHARA MASANOBU , MASUKO TAKASHI , HATAKEYAMA KEIICHI , NAKAMURA YUKI , OZAKI YOSHINOBU
IPC分类号： C09J7/00 , C09J11/04 , C09J201/00 , H01L21/301 , H01L21/52
CPC分类号： H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/29017 , H01L2224/29018 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/73265 , H01L2224/83191 , H01L2924/15311 , H01L2924/15747 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide adhesive films and adhesive sheets, capable of adhering to elements such as semiconductor wafers at a low temperature and easily removable from elements such as dicing sheets, to provide semiconductor devices using the adhesive film or sheet, and to provide a method of producing the semiconductor devices.
SOLUTION: An adhesive film 1 includes a high tack surface A and a low tack surface B. The high tack surface A comprises a first thermoplastic resin and the low tack surface B comprises a second thermoplastic resin. The glass transition temperature of the first thermoplastic resin is ≥0°C and
摘要翻译：要解决的问题：为了提供粘合剂膜和粘合片，能够在低温下粘附诸如半导体晶片的元件并且容易地从诸如切割片的元件移除，以提供使用粘合剂膜或片的半导体器件，并且提供一种制造半导体器件的方法。解决方案：粘合剂膜1包括高粘性表面A和低粘性表面B.高粘性表面A包括第一热塑性树脂，低粘性表面B包含第二热塑性树脂。第一热塑性树脂的玻璃化转变温度为≥0℃，<40℃，第二热塑性树脂的玻璃化转变温度为40℃以上且<80℃。通过在基板上涂布包括第一热塑性树脂的第一清漆和包含第二热塑性树脂的第二清漆（一个在另一个上）并且干燥以在基板上形成膜来形成粘合膜1。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2012253278A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2012253278A
公开(公告)日：2012-12-20
申请号：JP2011126573
申请日：2011-06-06
申请人： Hitachi Chem Co Ltd , 日立化成工業株式会社
发明人： OZAKI YOSHINOBU , HATAKEYAMA KEIICHI , TANJI MIKA , NAKAMURA YUKI , MIYAHARA MASANOBU
IPC分类号： H01L21/52 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/92247 , H01L2225/06562 , H01L2924/15311 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To improve moisture absorption reflow resistance of an obtained semiconductor device in manufacturing of the semiconductor device having semiconductor chips bonded with a die bonding film.SOLUTION: A semiconductor device manufacturing method comprises in the following order: a process of thermal compression bonding a semiconductor chip 10 with a support member 5 and/or another semiconductor chip 10 via a die bonding film 2; a process of progressing hardening of the die bonding film by heating the die bonding film 2 under a pressure atmosphere 70 of 0.2-0.5 MPa; and a process of encapsulating the semiconductor chips 10 by an encapsulation resin. Melt viscosity of the die bonding film 2 at a temperature that the die bonding film 2 reaches in the process of thermal compression bonding the semiconductor chip is 20000-100000 Pa s and shear viscosity of the die bonding film 2 at a temperature of 100-120°C is 5000 Pa s and under.
摘要翻译：要解决的问题：为了提高半导体器件在与芯片接合膜接合的半导体芯片的半导体器件的制造中提高吸湿回流电阻。解决方案：半导体器件制造方法包括以下顺序：通过芯片接合膜2将半导体芯片10与支撑构件5和/或另一个半导体芯片10热压接合的工艺; 通过在0.2-0.5MPa的压力气氛70下加热芯片接合膜2来进行芯片接合膜的硬化的工序; 以及通过封装树脂封装半导体芯片10的工艺。在半导体芯片的热压接过程中芯片接合膜2达到的温度下，芯片接合膜2的熔融粘度为20000-100000Pa·s，芯片接合膜2的剪切粘度为100〜120℃ ℃为5000Pa s以下。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2011222593A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011222593A
公开(公告)日：2011-11-04
申请号：JP2010087200
申请日：2010-04-05
申请人： Hitachi Chem Co Ltd , 日立化成工業株式会社
发明人： KAWAMORI TAKASHI , HATAKEYAMA KEIICHI , OZAKI YOSHINOBU , MITSUKURA KAZUYUKI , HASHIMOTO SHU
IPC分类号： H01L21/301 , H01L21/52
CPC分类号： H01L24/743 , H01L2224/743 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of sufficiently assuring manufacture yield even if a semiconductor wafer and an adhesive layer are reduced in thickness.SOLUTION: The method of manufacturing a semiconductor device includes an adhesive layer removal process, which is provided between an adhesive layer formation process and a dicing sheet pasting process, to remove an extra portion 4 of a photosensitive adhesive layer 3 formed outside the edge of a semiconductor wafer 1 in plan view. Accordingly, an adhesive sheet 2 is prevented from being directly connected to a dicing sheet 6 through the extra portion 4 of the photosensitive adhesive layer 3 in the dicing sheet pasting process that follows the adhesive layer removal process. Thus, occurrence of failure can be suppressed when the adhesive sheet 2 is peeled from the semiconductor wafer 1. Even if the semiconductor wafer 1 and the adhesive layer 3 are reduced in thickness, sufficient manufacture yield is assured.
摘要翻译：要解决的问题：提供即使半导体晶片和粘合剂层的厚度减小，也能够充分确保制造成品率的半导体器件的制造方法。解决方案：制造半导体器件的方法包括在粘合剂层形成工艺和切割片粘贴工艺之间提供的粘合层去除工艺，以除去形成在外部的感光性粘合剂层3的额外部分4 半导体晶片1的边缘在平面图中。因此，通过粘合剂层去除工序之后的切割片粘贴工序，防止粘合片2通过感光性粘接层3的多余部分4与切割片6直接连接。因此，当粘合片2从半导体晶片1剥离时，可以抑制故障的发生。即使半导体晶片1和粘合剂层3的厚度减小，也确保了足够的制造成品率。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2010114433A Die bonding film, and semiconductor device using the same 审中-公开
标题翻译： DIE粘结膜和使用其的半导体器件
公开(公告)号：JP2010114433A
公开(公告)日：2010-05-20
申请号：JP2009231461
申请日：2009-10-05
申请人： Hitachi Chem Co Ltd , 日立化成工業株式会社
发明人： HATAKEYAMA KEIICHI , OZAKI YOSHINOBU , YAMASHITA YUKIHIKO , YAMASHITA TAKESHI
IPC分类号： H01L21/52 , C09J7/00 , C09J11/00 , C09J133/04 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/01021 , H01L2924/01079 , H01L2924/15311 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide: a die bonding film such that the die bonding film can be easily laminated on a back surface of a semiconductor wafer at a low temperature of ≤80°C with a small amount of curvature of a chip, a semiconductor chip with the die bonding film can be easily picked up from a dicing base, and a semiconductor fabricated using the die bonding film has superior moisture absorption and heat resistance reliability; and a semiconductor device using the same. SOLUTION: The die bonding film 2 is for bonding and fixing a semiconductor element 1 and a base 4 with wiring or a semiconductor element, and contains a star-shaped acrylic copolymer, which has a glass transition temperature of 30 to 70°C and a weight-average molecular weight of 1 to 1,000,000. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种芯片接合薄膜，使得芯片接合薄膜可以容易地在低于80℃的低温下在半导体晶片的背面上以少量曲率层叠可以容易地从切割基底拾取具有芯片接合膜的半导体芯片，并且使用芯片接合膜制造的半导体具有优异的吸湿性和耐热可靠性; 以及使用该半导体装置的半导体装置。解决方案：芯片接合膜2用于将半导体元件1和基底4与布线或半导体元件接合并固定，并且包含玻璃化转变温度为30至70°的星形丙烯酸共聚物 C，重均分子量为1〜1,000,000。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009295951A Adhesive film, adhesive sheet, semiconductor device, and method for manufacturing semiconductor device 有权
标题翻译：胶粘膜，粘合片，半导体器件及制造半导体器件的方法
公开(公告)号：JP2009295951A
公开(公告)日：2009-12-17
申请号：JP2008223869
申请日：2008-09-01
申请人： Hitachi Chem Co Ltd , 日立化成工業株式会社
发明人： HATAKEYAMA KEIICHI , OZAKI YOSHINOBU , MASUKO TAKASHI , NAKAMURA YUKI , MIYAHARA MASANOBU
IPC分类号： H01L21/52 , C09J7/02 , H01L21/301
CPC分类号： H01L24/27 , H01L2224/29017 , H01L2224/29018 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/73265 , H01L2224/83191 , H01L2224/92247 , H01L2924/15311 , H01L2924/15747 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an adhesive film and an adhesive sheet which can be adhered, for example, to a member such as a semiconductor wafer at low temperature, easily peeled off, for example, from a member such as a dicing sheet, and air bubbles are hard to be generated between the adhesive film and a support member, for example, when the adhesive film is adhered to the support member, to provide a semiconductor device using the same, and to provide a method for manufacturing the semiconductor device. SOLUTION: The adhesive film has a high tack side A and a low tack side B. When tack strength of the high tack side A at 40°C is denoted by FA, and tack strength of the low tack side B at 40°C is denoted by FB, relations of FA/FB≥5 and FA≥10gf are satisfied. The high tack side A contains a first adhesive resin compound, and the low tack side B contains a second adhesive resin compound different from the first adhesive resin compound. Storage elasticity of a hardened material of the second adhesive resin compound at 260°C is 0.1-2.0 MPa. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：例如，为了提供粘合膜和粘合剂，例如可以例如粘附到诸如半导体晶片的部件在低温下，例如可以从诸如切割片和气泡难以在粘合剂膜和支撑构件之间产生，例如当粘合剂膜粘附到支撑构件上时，提供使用其的半导体器件，并提供制造方法半导体器件。解决方案：粘合剂膜具有高粘性侧A和低粘性侧B.当在40℃下高粘性侧A的粘着强度由FA表示时，低粘性侧B的粘着强度在40 ℃由FB表示，满足FA /FB≥5和FA≥10gf的关系。高粘性侧A包含第一粘合性树脂化合物，低粘性侧B含有与第一粘合性树脂化合物不同的第二粘合性树脂组合物。第二粘合性树脂化合物的硬化物质在260℃下的保存弹性为0.1〜2.0MPa。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009263620A Adhesive film for semiconductor 有权
标题翻译：半导体贴膜
公开(公告)号：JP2009263620A
公开(公告)日：2009-11-12
申请号：JP2008277332
申请日：2008-10-28
申请人： Hitachi Chem Co Ltd , 日立化成工業株式会社
发明人： NAKAMURA YUKI , MASUKO TAKASHI , HATAKEYAMA KEIICHI , OZAKI YOSHINOBU , MIYAHARA MASANOBU
IPC分类号： C09J179/08 , C09J7/00 , C09J11/04 , C09J171/02 , C09J183/06 , C09J201/00 , H01L21/52
CPC分类号： H01L24/27 , H01L24/29 , H01L24/32 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/73265 , H01L2224/83191 , H01L2224/92247 , H01L2924/15311 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide an adhesive film making the temperature in adhering to the rear side of a wafer sufficiently low and easily detached from a dicing sheet in a pickup process. SOLUTION: This adhesive film 1 for semiconductor includes a first adhesive layer 1a containing a first polyimide resin with the glass transition temperature of 0 to 40°C, and a second adhesive layer 1b containing a second polyimide resin with the glass transition temperature of 40 to 80°C and being formed on one side surface of the first adhesive layer 1a. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种粘合膜，其使得粘附在晶片的后侧的温度足够低，并且在拾取过程中容易地从切割片脱离。解决方案：该半导体用粘合膜1包括含有玻璃化转变温度为0〜40℃的第一聚酰亚胺树脂的第一粘合层1a和含有玻璃化转变温度的第二聚酰亚胺树脂的第二粘合层1b 为40〜80℃，形成在第一粘合层1a的一个侧面上。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2013004811A Manufacturing method of semiconductor chip with adhesive layer and manufacturing method of semiconductor device 有权
标题翻译：具有粘合层的半导体芯片的制造方法和半导体器件的制造方法
公开(公告)号：JP2013004811A
公开(公告)日：2013-01-07
申请号：JP2011135615
申请日：2011-06-17
申请人： Hitachi Chem Co Ltd , 日立化成工業株式会社
发明人： KAWAMORI TAKASHI , OZAKI YOSHINOBU , HATAKEYAMA KEIICHI , MASUKO TAKASHI
IPC分类号： H01L21/52 , H01L21/301
CPC分类号： H01L24/27 , H01L2224/83191 , H01L2924/15747 , H01L2924/15788 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor chip with an adhesive layer capable of easily forming a semiconductor chip with an adhesive layer having a shape suitable for semiconductor chip mounting.SOLUTION: A manufacturing method of a semiconductor chip with an adhesive layer according to one embodiment comprises: a sticking step of sticking a plurality of semiconductor chips 27 arranged at intervals to an adhesive film 110 containing a photocurable component; an exposure step of irradiating the adhesive film 110 and a self-adhesive film 120 containing the photocurable component with light via the semiconductor chip 27 with the self-adhesive film 120 arranged on the opposite side the semiconductor chip 27 and with the adhesive film 110 sandwiched between the self-adhesive film 120 and the semiconductor chip 27; and picking up the semiconductor chip 27 to which the adhesive film 110 is attached after the exposure step.
摘要翻译：要解决的问题：提供具有能够容易地形成具有适于半导体芯片安装的形状的粘合剂层的半导体芯片的粘合剂层的半导体芯片的制造方法。解决方案：根据一个实施方案的具有粘合剂层的半导体芯片的制造方法包括：将多个半导体芯片27粘贴到包含可光固化部件的粘合膜110上的粘贴步骤; 曝光步骤，通过半导体芯片27将包含光固化性成分的自粘合膜120和自粘合膜120配置在半导体芯片27的相反侧并且粘合膜110夹在中间在自粘膜120和半导体芯片27之间; 并且在曝光步骤之后拾取附着有粘合膜110的半导体芯片27。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012174785A Dicing tape integrated adhesive sheet and semiconductor device using the same 有权
标题翻译：使用胶带的集成胶粘片和半导体器件
公开(公告)号：JP2012174785A
公开(公告)日：2012-09-10
申请号：JP2011033421
申请日：2011-02-18
申请人： Hitachi Chem Co Ltd , 日立化成工業株式会社
发明人： HATAKEYAMA KEIICHI , OZAKI YOSHINOBU , TANJI MIKA , KATAYAMA YOJI , NAKAMURA YUKI , MIYAHARA MASANOBU , KIKUCHI SHOGO , IKETANI TAKUJI
IPC分类号： H01L21/301 , C09J7/02 , H01L21/52
CPC分类号： H01L24/29 , H01L24/27 , H01L2224/48091 , H01L2224/73265 , H01L2224/83191 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a dicing tape integrated adhesive sheet and a semiconductor device using the same, which can inhibit separation of a ring frame and scattering of a chip in a dicing process and achieve excellent pickup property in a pickup process.SOLUTION: A dicing tape integrated adhesive sheet 1 comprises a base material 10, a first adhesive layer 20 arranged on the base material, a second adhesive layer 30 arranged on the first adhesive layer and having an opening 30a exposing the first adhesive layer, and a die-bonding film 40 arranged so as to cover the opening. A semiconductor device uses the dicing tape integrated adhesive sheet.
摘要翻译：要解决的问题：提供一种切割带一体粘合片和使用该粘合片的半导体器件，其可以抑制环形框架的分离和切割工艺中的芯片散射，并且在拾取过程中实现优异的拾取性能。解决方案：切割带一体粘合片1包括基材10，布置在基材上的第一粘合剂层20，布置在第一粘合层上的第二粘合剂层30，并且具有露出第一粘合层以及布置成覆盖开口的芯片接合膜40。半导体器件使用切割带集成粘合片。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2012174784A Dicing tape integrated adhesive sheet and semiconductor device using the same 有权
标题翻译：使用胶带的集成胶粘片和半导体器件
公开(公告)号：JP2012174784A
公开(公告)日：2012-09-10
申请号：JP2011033417
申请日：2011-02-18
申请人： Hitachi Chem Co Ltd , 日立化成工業株式会社
发明人： HATAKEYAMA KEIICHI , OZAKI YOSHINOBU , TANJI MIKA , KATAYAMA YOJI , NAKAMURA YUKI , MIYAHARA MASANOBU , KIKUCHI SHOGO , IKETANI TAKUJI
IPC分类号： H01L21/301 , C09J7/02 , H01L21/52
CPC分类号： H01L24/27 , H01L2224/48091 , H01L2224/73265 , H01L2224/83191 , H01L2224/92247 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a dicing tape integrated adhesive sheet and a semiconductor device using the same, which can inhibit separation of a ring frame and scattering of a chip in a dicing process and achieve excellent pickup property in a pickup process.SOLUTION: A dicing tape integrated adhesive sheet 1 comprises a base material 10, a first adhesive layer 20 arranged on the base material, a second adhesive layer 30 arranged on the first adhesive layer and having an opening 30a exposing the first adhesive layer, and a die-bonding film 40 arranged at the opening. A semiconductor device uses the dicing tape integrated adhesive sheet.
摘要翻译：要解决的问题：提供一种切割带一体粘合片和使用该粘合片的半导体器件，其可以抑制环形框架的分离和切割工艺中的芯片散射，并且在拾取过程中实现优异的拾取性能。解决方案：切割带一体粘合片1包括基材10，布置在基材上的第一粘合剂层20，布置在第一粘合层上的第二粘合剂层30，并且具有露出第一粘合层以及布置在开口处的芯片接合膜40。半导体器件使用切割带集成粘合片。版权所有（C）2012，JPO＆INPIT

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