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11. 发明授权

US07372718B2 Storage and semiconductor device 有权
标题翻译：存储和半导体器件
公开(公告)号：US07372718B2
公开(公告)日：2008-05-13
申请号：US11243342
申请日：2005-10-04
申请人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
发明人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： G11C13/00 , G11C13/0069 , G11C2013/0078 , G11C2013/009 , G11C2213/79
摘要： A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a result of an electrical signal higher than or equal to a second threshold signal whose polarity differs from that of the first threshold signal being applied; and a circuit element that is connected in series to the storage element and that serves as a load, the storage element and the circuit element forming a memory cell, and the memory cells being arranged in a matrix, wherein the resistance value of the circuit element when the storage element is read differs from the resistance value when the storage element is written or erased.
摘要翻译：存储装置包括存储元件，其具有使得其电阻值由于高于或等于施加的第一阈值信号的电信号而从高状态变为低状态的特性，并且从低状态改变为作为高于或等于极性与施加的第一阈值信号的极性不同的第二阈值信号的电信号的结果的高状态; 以及电路元件，其与所述存储元件串联连接并用作负载，所述存储元件和所述电路元件形成存储单元，并且所述存储单元被布置成矩阵，其中所述电路元件的电阻值当存储元件被读取时与存储元件被写入或擦除时的电阻值不同。

12. 发明申请

US20070153564A1 STORAGE DEVICE AND SEMICONDUCTOR APPARATUS 有权
标题翻译：存储器件和半导体器件
公开(公告)号：US20070153564A1
公开(公告)日：2007-07-05
申请号：US11420290
申请日：2006-05-25
申请人： Hironobu Mori , Hidenari Hachino , Nobumichi Okazaki
发明人： Hironobu Mori , Hidenari Hachino , Nobumichi Okazaki
IPC分类号： G11C11/00
CPC分类号： G11C11/22 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0061 , G11C13/0069 , G11C13/0097 , G11C2213/31 , G11C2213/79
摘要： A storage device includes memory cells disposed in a matrix. The memory cells each include a storage element whose resistance changes from a higher state to a lower state when an electric signal of a first threshold level or higher is applied and whose resistance changes from the lower state to the higher state when an electric signal of a second threshold level or higher whose polarity is different from the polarity of the electric signal of the first threshold level or higher is applied, and a circuit element connected in series with the storage element. In a state in which an erasing voltage is applied to at least one memory cell on which erasing is currently being performed, after the lapse of a predetermined time from the application, an erasing voltage is applied to at least one memory cell on which erasing is to be next performed.
摘要翻译：存储装置包括设置在矩阵中的存储单元。存储单元各自包括存储元件，当第一阈值电平或更高的电信号被施加时，其电阻从较高状态变化到较低状态，并且当电信号为施加极性与第一阈值或更高的电信号的极性不同的第二阈值电平，以及与存储元件串联连接的电路元件。在将擦除电压施加到至少一个存储单元的状态下，当前正在进行擦除的存储单元中，在从应用经过预定时间之后，将擦除电压施加到至少一个存储单元，擦除是接下来执行。

13. 发明授权

US07209379B2 Storage device and semiconductor device 有权
标题翻译：存储设备和半导体器件
公开(公告)号：US07209379B2
公开(公告)日：2007-04-24
申请号：US11224856
申请日：2005-09-13
申请人： Hironobu Mori , Hidenari Hachino , Chieko Nakashima , Tsutomu Sagara , Nobumichi Okazaki , Hajime Nagao
发明人： Hironobu Mori , Hidenari Hachino , Chieko Nakashima , Tsutomu Sagara , Nobumichi Okazaki , Hajime Nagao
IPC分类号： G11C11/00
CPC分类号： G11C11/22 , G11C13/0007 , G11C13/0038 , G11C13/004 , G11C13/0069 , G11C2013/0066 , G11C2213/79
摘要： A storage device is proposed, which includes: a source line arranged along a row direction; a bit line arranged along a column direction; a storage element arranged at an intersection of the source line and the bit line; a writing circuit connected to one terminal of the bit line and applying a predetermined voltage to the bit line; and a voltage adjusting circuit connected to a storage element that is located closest to another terminal of the bit line; wherein the voltage adjusting circuit compares the voltage applied to the storage element located closest to the another terminal of the bit line with a setting voltage to thereby adjust the voltage that the writing circuit applies to the bit line.
摘要翻译：提出了一种存储装置，其包括：沿着行方向布置的源极线; 沿列方向布置的位线; 存储元件，其布置在所述源极线和所述位线的交叉点处; 写入电路，连接到所述位线的一个端子并向所述位线施加预定电压; 以及电压调整电路，其连接到最靠近所述位线的另一个端子的存储元件; 其中，所述电压调整电路将施加到位于最靠近所述位线的另一端子的存储元件的电压与设定电压进行比较，从而调整所述写入电路对所述位线施加的电压。

14. 发明申请

US20070008770A1 STORAGE DEVICES AND SEMICONDUCTOR DEVICES 审中-公开
标题翻译：存储器件和半导体器件
公开(公告)号：US20070008770A1
公开(公告)日：2007-01-11
申请号：US11428023
申请日：2006-06-30
申请人： Hajime Nagao , Hidenari Hachino , Hironobu Mori , Chieko Fukumoto
发明人： Hajime Nagao , Hidenari Hachino , Hironobu Mori , Chieko Fukumoto
IPC分类号： G11C11/00 , G11C7/06 , G11C7/00
CPC分类号： G11C13/0011 , G11C11/5614 , G11C11/5678 , G11C13/0004 , G11C13/0064 , G11C13/0069 , G11C2013/0071 , G11C2013/0076 , G11C2213/79
摘要： The present invention provides a storage device including a storage element, a circuit element, and write control means. The storage element has a characteristic exhibiting a resistance changing from a large value to a small value due to application of an electrical signal at least equal to a first threshold signal but changing from a small value to a large value due to application of an electrical signal at least equal to a second threshold signal. The circuit element is connected in series to the storage element. The write control means is configured to carry out a first write operation, detect a resistance by the storage element after an n-th write operation, where n≧1, compare the detected resistance with the set value, and carry out a (n+1)-th write operation.
摘要翻译：本发明提供一种存储装置，包括存储元件，电路元件和写入控制装置。存储元件具有由于施加至少等于第一阈值信号但由于施加电信号而从小值变化为大值的电信号而从大值向小值变化的特性至少等于第二阈值信号。电路元件与存储元件串联连接。写入控制装置被配置为执行第一写入操作，在第n次写入操作之后检测存储元件的电阻，其中n> = 1，将检测到的电阻与设定值进行比较，并执行a（n +1）写操作。

15. 发明申请

US20060092737A1 Memory and semiconductor device 有权
标题翻译：存储器和半导体器件
公开(公告)号：US20060092737A1
公开(公告)日：2006-05-04
申请号：US11265894
申请日：2005-11-03
申请人： Hidenari Hachino , Hironobu Mori , Nobumichi Okazaki , Katsuhisa Aratani
发明人： Hidenari Hachino , Hironobu Mori , Nobumichi Okazaki , Katsuhisa Aratani
IPC分类号： G11C7/02
CPC分类号： G11C13/0064 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2213/79
摘要： A memory includes: memory elements arranged in a matrix, each memory element having such characteristics that when an electric signal at a level equal to or higher than that of a first threshold signal is applied to the memory element, the resistance thereof is changed from a high value to a low value, and when an electric signal at a level equal to or higher than that of a second threshold signal is applied thereto, the resistance is changed from the low value to the high value, the polarities of the first and second threshold signals being different from each other; electric circuits for applying electric signals to the memory elements; and detection units each for measuring a current flowing through the corresponding memory element or a voltage applied thereto from the start of the application of electric signals to detect whether the resistance is high or low.
摘要翻译：存储器包括：排列成矩阵的存储器元件，每个存储元件具有这样的特性，即当等于或高于第一阈值信号的电信号被施加到存储元件时，其电阻从高值为低值，当施加等于或高于第二阈值信号的电信号时，电阻从低值变为高值，第一和第二极性的极性阈值信号彼此不同; 用于向存储元件施加电信号的电路; 以及各自的检测单元，用于测量从开始施加电信号开始流过相应的存储元件的电流或施加到其上的电压，以检测电阻是高还是低。

16. 发明申请

US20050285093A1 Magnetic storage device using ferromagnetic tunnel junction element 失效
标题翻译：使用铁磁隧道结元件的磁存储装置
公开(公告)号：US20050285093A1
公开(公告)日：2005-12-29
申请号：US10530271
申请日：2003-09-18
申请人： Hiroshi Yoshihara , Katsutoshi Moriyama , Hironobu Mori , Nobumichi Okazaki
发明人： Hiroshi Yoshihara , Katsutoshi Moriyama , Hironobu Mori , Nobumichi Okazaki
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L29/00 , H01L43/08
CPC分类号： H01L27/222
摘要： It is a task to provide a magnetic storage device of complementary type, of which reliability is improved by precisely performing writing storage data. In the present invention, therefore, in a magnetic storage device of complementary type for storing storage data contrary to each other in a first ferromagnetic tunnel junction element and a second ferromagnetic tunnel junction element, respectively, the first ferromagnetic tunnel junction element and the second ferromagnetic tunnel junction element are formed adjacently on a semiconductor substrate, first writing lines is wound around the first ferromagnetic tunnel junction element like a coil and the same time second writing lines is wound around the second ferromagnetic tunnel junction element like a coil, and in addition, a winding direction of the first writing lines and a winding direction of the second writing lines are reversed to each other.
摘要翻译：提供互补式磁存储装置的任务是通过精确地执行写入存储数据来提高可靠性。因此，在本发明中，在第一铁磁隧道结元件和第二铁磁隧道结元件中分别存储相互相反的存储数据的互补型磁存储器件中，第一铁磁隧道结元件和第二铁磁隧道结元件相邻地形成在半导体衬底上，第一写入线如线圈缠绕在第一铁磁隧道结元件周围，同时第二写入线缠绕在第二铁磁隧道结元件上，如线圈，另外，第一写入线的卷绕方向和第二写入线的卷绕方向相反。

17. 发明授权

US08512115B2 Video game with off-screen target icons 有权
标题翻译：视频游戏与屏幕外目标图标
公开(公告)号：US08512115B2
公开(公告)日：2013-08-20
申请号：US12927714
申请日：2010-11-22
申请人： Kazuhiro Namba , Masatoshi Yamaoka , Hironobu Mori , Shuichi Myogan
发明人： Kazuhiro Namba , Masatoshi Yamaoka , Hironobu Mori , Shuichi Myogan
IPC分类号： A63F9/24
CPC分类号： A63F13/537 , A63F13/2145 , A63F13/812 , A63F2300/1075 , A63F2300/204 , A63F2300/306 , A63F2300/307 , A63F2300/64 , A63F2300/8011
摘要： In a baseball game when a base that cannot be displayed on a field display image exists, an icon corresponding to the base is displayed on a straight line, within the field display image, linking a fielder character to the base.
摘要翻译：在棒球游戏中，当存在不能在场显示图像上显示的基地时，在场地显示图像中的直线上显示与基地对应的图标，将守场员角色连接到基地。

18. 发明授权

US07542335B2 Magnetic storage device using ferromagnetic tunnel junction element 失效
标题翻译：使用铁磁隧道结元件的磁存储装置
公开(公告)号：US07542335B2
公开(公告)日：2009-06-02
申请号：US10530271
申请日：2003-09-18
申请人： Hiroshi Yoshihara , Katsutoshi Moriyama , Hironobu Mori , Nobumichi Okazaki
发明人： Hiroshi Yoshihara , Katsutoshi Moriyama , Hironobu Mori , Nobumichi Okazaki
IPC分类号： G11C11/14
CPC分类号： H01L27/222
摘要： It is a task to provide a magnetic storage device of complementary type, of which reliability is improved by precisely performing writing storage data.In the present invention, therefore, in a magnetic storage device of complementary type for storing storage data contrary to each other in a first ferromagnetic tunnel junction element and a second ferromagnetic tunnel junction element, respectively, the first ferromagnetic tunnel junction element and the second ferromagnetic tunnel junction element are formed adjacently on a semiconductor substrate, first writing lines is wound around the first ferromagnetic tunnel junction element like a coil and the same time second writing lines is wound around the second ferromagnetic tunnel junction element like a coil, and in addition, a winding direction of the first writing lines and a winding direction of the second writing lines are reversed to each other.
摘要翻译：提供互补式磁存储装置的任务是通过精确地执行写入存储数据来提高可靠性。因此，在本发明中，在第一铁磁隧道结元件和第二铁磁隧道结元件中分别存储相互相反的存储数据的互补型磁存储器件中，第一铁磁隧道结元件和第二铁磁隧道结元件相邻地形成在半导体衬底上，第一写入线如线圈缠绕在第一铁磁隧道结元件周围，同时第二写入线缠绕在第二铁磁隧道结元件上，如线圈，另外，第一写入线的卷绕方向和第二写入线的卷绕方向相反。

19. 发明授权

US07242606B2 Storage apparatus and semiconductor apparatus 有权
标题翻译：存储装置和半导体装置
公开(公告)号：US07242606B2
公开(公告)日：2007-07-10
申请号：US11225593
申请日：2005-09-13
申请人： Hidenari Hachino , Nobumichi Okazaki , Wataru Otsuka , Tomohito Tsushima , Tsutomu Sagara , Chieko Nakashima , Hironobu Mori , Hajime Nagao
发明人： Hidenari Hachino , Nobumichi Okazaki , Wataru Otsuka , Tomohito Tsushima , Tsutomu Sagara , Chieko Nakashima , Hironobu Mori , Hajime Nagao
IPC分类号： G11C11/00
CPC分类号： G11C13/02 , G11C13/0069 , G11C2213/79
摘要： A storage apparatus includes memory devices each having a storage element with a characteristic that the application of an electric signal not lower than a first threshold signal allows the storage element to shift from a high resistance value state to a low resistance value state, and that the application of an electric signal not lower than a second threshold signal, which has a polarity different from that of the first threshold signal, allows the storage element to shift form a low resistance value state to a high resistance value state, and a circuit element connected to the storage element in series to be a load; wherein the memory devices are arranged in a matrix and one terminal of each of the memory devices is connected to a common line; and wherein an intermediate potential between a power supply potential and a ground potential is applied to the common line.
摘要翻译：一种存储装置，具有各自具有存储元件的存储器件，该存储元件具有不低于第一阈值信号的电信号的施加使得存储元件从高电阻值状态向低电阻值状态移动的特征，施加不低于第一阈值信号极性的第二阈值信号的电信号允许存储元件从低电阻值状态移位到高电阻值状态，并且连接的电路元件将串联的存储元件作为负载; 其中所述存储器件被布置在矩阵中，并且每个所述存储器件的一个端子连接到公共线; 并且其中电源电位和接地电位之间的中间电位被施加到公共线。

20. 发明授权

US07239539B2 Magnetic storage apparatus using ferromagnetic tunnel junction device 失效
标题翻译：磁存储装置采用铁磁隧道连接装置
公开(公告)号：US07239539B2
公开(公告)日：2007-07-03
申请号：US10508259
申请日：2003-03-17
申请人： Katsutoshi Moriyama , Hironobu Mori
发明人： Katsutoshi Moriyama , Hironobu Mori
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , G11C11/16
摘要： A magnetic storage apparatus capable of performing storage data to a ferromagnetic tunnel junction device surely and with a low electric consumption. In the present invention, a magnetic storage apparatus using a ferromagnetic tunnel junction device configured so as to perform writing of storage data into the ferromagnetic tunnel junction device by applying writing magnetic force on the ferromagnetic tunnel junction device and to perform reading of storage data written in the ferromagnetic tunnel junction device by detecting a resistance value of the ferromagnetic tunnel junction device is provided, wherein it is configured to be able to change the magnitude of the writing magnetic force.
摘要翻译：一种磁性存储装置，其能够确实地以低的电力消耗向铁磁隧道结装置执行存储数据。在本发明中，使用铁磁隧道结装置的磁存储装置，通过在铁磁隧道结装置上施加写入磁力，将存储数据写入到铁磁隧道结装置中，并执行写入的存储数据的读取，提供了通过检测铁磁隧道结装置的电阻值的铁磁隧道结装置，其中它被配置为能够改变写入磁力的大小。

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