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11. 发明授权

US08921192B2 Semiconductor devices and methods of fabricating the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08921192B2
公开(公告)日：2014-12-30
申请号：US13615825
申请日：2012-09-14
申请人： Dong Hyuk Kim , Hoi Sung Chung , Myungsun Kim , Dongsuk Shin
发明人： Dong Hyuk Kim , Hoi Sung Chung , Myungsun Kim , Dongsuk Shin
IPC分类号： H01L21/336 , H01L29/66 , H01L21/02 , H01L29/78 , H01L29/165
CPC分类号： H01L29/7834 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L29/0692 , H01L29/165 , H01L29/66636 , H01L29/7848
摘要： A MOS transistor includes a pair of impurity regions formed in a substrate as spaced apart from each other, and a gate electrode formed on a region of the substrate located between the pair of impurity regions. Each of the impurity regions is formed of a first epitaxial layer, a second epitaxial layer on the first epitaxial layer, and a third epitaxial layer on the second epitaxial layer. The first epitaxial layer is formed of at least one first sub-epitaxial layer and a respective second sub-epitaxial layer stacked on each first sub-epitaxial layer. An impurity concentration of the first sub-epitaxial layer is less than that of the second sub-epitaxial layer.
摘要翻译： MOS晶体管包括在彼此间隔开的基板中形成的一对杂质区，以及形成在位于该对杂质区之间的基板的区域上的栅电极。每个杂质区由第一外延层，第一外延层上的第二外延层和第二外延层上的第三外延层形成。第一外延层由堆叠在每个第一子外延层上的至少一个第一子外延层和相应的第二子外延层形成。第一子外延层的杂质浓度小于第二子外延层的杂质浓度。

12. 发明授权

US08637373B2 Transistors and methods of manufacturing the same 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US08637373B2
公开(公告)日：2014-01-28
申请号：US13410475
申请日：2012-03-02
申请人： Hoi-Sung Chung , Dong-Suk Shin , Dong-Hyuk Kim , Myung-Sun Kim
发明人： Hoi-Sung Chung , Dong-Suk Shin , Dong-Hyuk Kim , Myung-Sun Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/823807 , H01L21/30608 , H01L21/823814 , H01L21/823864 , H01L29/165 , H01L29/6656 , H01L29/66575 , H01L29/66636 , H01L29/78 , H01L29/7848
摘要： In a method of manufacturing a transistor, a gate structure is formed on a substrate including silicon. An upper portion of the substrate adjacent to the gate structure is etched to form a first recess in the substrate. A preliminary first epitaxial layer including silicon-germanium is formed in the first recess. An upper portion of the preliminary first epitaxial layer is etched to form a second recess on the preliminary first epitaxial layer. In addition, a portion of the preliminary first epitaxial layer adjacent to the second recess is etched to thereby transform the preliminary first epitaxial layer into a first epitaxial layer. A second epitaxial layer including silicon-germanium is formed in the second recess located on the first epitaxial layer.
摘要翻译：在制造晶体管的方法中，在包括硅的衬底上形成栅极结构。蚀刻与栅极结构相邻的衬底的上部，以在衬底中形成第一凹部。在第一凹部中形成包括硅 - 锗的初步的第一外延层。蚀刻初步第一外延层的上部以在初步第一外延层上形成第二凹槽。此外，蚀刻与第二凹槽相邻的初步第一外延层的一部分，从而将初步第一外延层转变为第一外延层。在位于第一外延层上的第二凹槽中形成包括硅 - 锗的第二外延层。

13. 发明授权

US08531617B2 Display device and method of manufacturing the same 失效
标题翻译：显示装置及其制造方法
公开(公告)号：US08531617B2
公开(公告)日：2013-09-10
申请号：US11932852
申请日：2007-10-31
申请人： Dong Hyuk Kim , Neung Ho Cho , Young Tae Noh , Jung Mok Park , Hyun Su Lim
发明人： Dong Hyuk Kim , Neung Ho Cho , Young Tae Noh , Jung Mok Park , Hyun Su Lim
IPC分类号： G02F1/1333 , G02F1/1345
CPC分类号： G02F1/1345 , G02F1/13458 , G02F1/136286
摘要： A display includes; a substrate including a display region and a peripheral region, a common line portion provided in the peripheral region of the substrate, and the common line portion includes a common line and a common line protruding portion which extends away from and is wider than the common line, and a dummy pattern portion which partially overlaps a boundary region between the common line and the common line protruding portion.
摘要翻译：显示器包括包括显示区域和周边区域的基板，设置在基板的周边区域中的公共线部分，公共线部分包括公共线和公共线突出部分，该公共线和公共线突出部分远离公共线以及与公共线和公共线突出部之间的边界区域部分重叠的虚拟图案部分。

14. 发明申请

US20120241815A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120241815A1
公开(公告)日：2012-09-27
申请号：US13422077
申请日：2012-03-16
申请人： Dong Hyuk KIM , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
发明人： Dong Hyuk KIM , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
IPC分类号： H01L29/78 , H01L21/20
CPC分类号： H01L29/7848 , H01L21/02057 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L27/088 , H01L27/0924 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/45 , H01L29/66636
摘要： A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.
摘要翻译：制造一个或多个半导体器件的方法包括在半导体衬底中形成沟槽，执行循环过程以从沟槽去除污染物，以及在沟槽上形成外延层。循环过程包括将含有锗烷，氯化氢和氢的第一反应气体和含有氯化氢和氢的第二反应气体依次提供到半导体衬底上。

15. 发明申请

US20110241071A1 Semiconductor Devices Having Field Effect Transistors With Epitaxial Patterns in Recessed Regions 有权
标题翻译：具有场效应晶体管的半导体器件在嵌入区域中具有外延图案
公开(公告)号：US20110241071A1
公开(公告)日：2011-10-06
申请号：US13078159
申请日：2011-04-01
申请人： Dongsuk Shin , Dong Hyuk Kim , Myungsun Kim , YongJoo Lee , Hoi Sung Chung
发明人： Dongsuk Shin , Dong Hyuk Kim , Myungsun Kim , YongJoo Lee , Hoi Sung Chung
IPC分类号： H01L29/06
CPC分类号： H01L29/7834 , H01L29/6653 , H01L29/6659 , H01L29/66636
摘要： A semiconductor device includes a device isolation pattern, a gate line, and an epitaxial pattern. The device isolation pattern is disposed in a semiconductor substrate to define an active area. The gate line intersects the active area. The epitaxial pattern fills a recess region in the active area at one side of the gate line and includes a different constituent semiconductor element than the semiconductor substrate. The recess region includes a first inner sidewall that is adjacent to the device isolation pattern and extends in the lengthwise direction of the gate, and a second inner sidewall that extends in the direction perpendicular to the lengthwise direction of the gate line. The active area forms the first inner sidewall of the recess, while the device isolation layer forms at least a portion of the second inner sidewall of the recess. The epitaxial pattern contacts the first inner sidewall and the second inner sidewall of the recess region.
摘要翻译：半导体器件包括器件隔离图案，栅极线和外延图案。器件隔离图案设置在半导体衬底中以限定有源区。栅极线与有效区域相交。外延图案填充栅极线一侧的有源区域中的凹陷区域，并且包括与半导体衬底不同的构成半导体元件。所述凹部区域包括与所述器件隔离图案相邻并沿所述栅极的长度方向延伸的第一内侧壁和沿与所述栅极线的长度方向垂直的方向延伸的第二内侧壁。有源区域形成凹部的第一内侧壁，而器件隔离层形成凹部的第二内侧壁的至少一部分。外延图案接触凹陷区域的第一内侧壁和第二内侧壁。

16. 发明申请

US20110180889A1 X-RAY DETECTOR 有权
标题翻译： X射线探测器
公开(公告)号：US20110180889A1
公开(公告)日：2011-07-28
申请号：US12975568
申请日：2010-12-22
申请人： Kwan-Wook JUNG , Dong-Hyuk KIM , Woo-Jae LIM , Jea-Eun RYU
发明人： Kwan-Wook JUNG , Dong-Hyuk KIM , Woo-Jae LIM , Jea-Eun RYU
IPC分类号： H01L27/14
CPC分类号： H01L27/14663
摘要： An X-ray detector includes a substrate; a gate line that is extended in a first direction on the substrate; a gate electrode that is extended from the gate line; a semiconductor layer that is positioned on the gate electrode; a source electrode and drain electrode that are positioned on the semiconductor layer; a lower electrode that is extended from the drain electrode; a photodiode that is positioned on the lower electrode; a first insulation layer that is positioned on the source electrode and the drain electrode and that includes a first opening that exposes the source electrode; and a data line that is extended in a second direction intersecting a first direction on the first insulation layer to intersect the gate line with the first insulation layer interposed between the data line and the gate line, and the data line being electrically connected to the source electrode through the first opening.
摘要翻译： X射线检测器包括：基板; 在基板上沿第一方向延伸的栅极线; 从栅极线延伸的栅电极; 位于栅电极上的半导体层; 位于所述半导体层上的源电极和漏电极; 从所述漏电极延伸的下电极; 位于下电极上的光电二极管; 第一绝缘层，其位于源电极和漏电极上，并且包括暴露源电极的第一开口; 以及数据线，其在与所述第一绝缘层上的第一方向相交的第二方向上延伸以与所述栅极线相交，并且所述第一绝缘层插入在所述数据线和所述栅极线之间，并且所述数据线电连接到所述源极电极通过第一个开口。

17. 发明申请

US20110147741A1 X-RAY DETECTOR 有权
标题翻译： X射线探测器
公开(公告)号：US20110147741A1
公开(公告)日：2011-06-23
申请号：US12972393
申请日：2010-12-17
申请人： Kwan-Wook Jung , Dong-Hyuk Kim
发明人： Kwan-Wook Jung , Dong-Hyuk Kim
IPC分类号： H01L31/119
CPC分类号： H01L31/022408 , H01L27/1461 , H01L27/14632 , H01L27/14643 , H01L27/14663 , H01L27/14692 , H01L31/119
摘要： An X-ray detector constructed as an exemplary embodiment of the present invention includes a semiconductor layer, a data line including a source electrode covering a first portion of the semiconductor layer, a drain electrode disposed opposite to the source electrode, a first lower electrode formed on the upper portion of a second portion of the semiconductor layer and a gate insulating layer and elongated from the drain electrode, and a passivation layer formed on the upper portion of one part of the lower electrode including the drain electrode. Further, the second lower electrode is formed approaching the gate electrode. The X-ray detector constructed as the exemplary embodiment of the present invention includes a second lower electrode formed on the passivation layer and placed approaching a gate electrode. The area in which a diode is disposed may be maximized, and the amount of leakage current may be reduced.
摘要翻译：作为本发明的示例性实施例构造的X射线检测器包括半导体层，包括覆盖半导体层的第一部分的源电极的数据线，与源电极相对设置的漏极，形成的第一下电极在所述半导体层的第二部分的上部和栅极绝缘层上并且从所述漏极延伸，以及钝化层，形成在包括所述漏电极的所述下电极的一部分的上部。此外，第二下电极形成为接近栅电极。作为本发明的示例性实施例构造的X射线检测器包括形成在钝化层上并放置为接近栅电极的第二下电极。设置二极管的区域可以最大化，并且可以减少泄漏电流的量。

18. 发明授权

US09236475B2 Semiconductor devices and methods of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09236475B2
公开(公告)日：2016-01-12
申请号：US14820314
申请日：2015-08-06
申请人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
发明人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
IPC分类号： H01L21/336 , H01L29/78 , H01L27/088 , H01L29/08 , H01L29/45
CPC分类号： H01L29/7848 , H01L21/02057 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L27/088 , H01L27/0924 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/45 , H01L29/66636
摘要： A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.
摘要翻译：制造一个或多个半导体器件的方法包括在半导体衬底中形成沟槽，执行循环过程以从沟槽去除污染物，以及在沟槽上形成外延层。循环过程包括将含有锗烷，氯化氢和氢的第一反应气体和含有氯化氢和氢的第二反应气体依次提供到半导体衬底上。

19. 发明申请

US20150349122A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150349122A1
公开(公告)日：2015-12-03
申请号：US14820314
申请日：2015-08-06
申请人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
发明人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
IPC分类号： H01L29/78 , H01L29/08 , H01L29/45 , H01L27/088
CPC分类号： H01L29/7848 , H01L21/02057 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L27/088 , H01L27/0924 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/45 , H01L29/66636
摘要： A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.
摘要翻译：制造一个或多个半导体器件的方法包括在半导体衬底中形成沟槽，执行循环过程以从沟槽去除污染物，以及在沟槽上形成外延层。循环过程包括将含有锗烷，氯化氢和氢的第一反应气体和含有氯化氢和氢的第二反应气体依次提供到半导体衬底上。

20. 发明授权

US08978269B2 Hybrid drying system and method for controlling a hybrid drying system 有权
标题翻译：混合干燥系统及混合干燥系统的控制方法
公开(公告)号：US08978269B2
公开(公告)日：2015-03-17
申请号：US13142817
申请日：2010-05-19
申请人： Seung Tae Park , Hue Jae Kim , Hyun Woong Choi , Kyung Rok Yoo , Dong Hyuk Kim
发明人： Seung Tae Park , Hue Jae Kim , Hyun Woong Choi , Kyung Rok Yoo , Dong Hyuk Kim
IPC分类号： F26B3/00 , F26B21/08 , F24F3/14 , F26B21/06
CPC分类号： F26B21/08 , F24F3/14 , F24F2203/1016 , F24F2203/1032 , F26B21/06 , F26B21/086 , Y02P70/40
摘要： Disclosed is a hybrid drying system where a cold-air drier and a desiccant drier are combined to increase drying efficiency (extent of dehumidification/power consumption), thereby shortening drying time and significantly reducing operation costs. The hybrid drying system includes a desiccant drier installed between an evaporator and a condenser and having an absorbing part configured to produce dry air from the cold-air dried air which has passed through the evaporator and a detaching part configured to supply recycled air heated by the condensation heat of the condenser as a recycling heat source; a heat exchanger configured to heat-exchange exterior air with recycled exhaust air with the recycled air to retrieve exhaust heat; and a control unit configured to simultaneously control a cold-air drying operation and a desiccant drying operation according to the humidity and temperature of the drying chamber. The hybrid drying system is operated through a freezing cycle, a drying cycle, a drying chamber circulating cycle, and a recycling cycle.
摘要翻译：公开了一种混合干燥系统，其中组合了冷空气干燥器和干燥剂干燥器以提高干燥效率（除湿/功率消耗的程度），从而缩短干燥时间并显着降低操作成本。混合干燥系统包括安装在蒸发器和冷凝器之间的干燥剂干燥器，并具有构造成从已经通过蒸发器的冷空气干燥空气产生干燥空气的吸收部分，以及被配置为供应由冷凝器的冷凝热作为回收热源; 热交换器，被配置为利用再循环的空气将外部空气与再循环的废气进行热交换以回收废热; 以及控制单元，被配置为根据干燥室的湿度和温度同时控制冷风干燥操作和干燥剂干燥操作。混合干燥系统通过冷冻循环，干燥循环，干燥室循环循环和循环循环进行操作。

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