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1. 发明申请

US20110180889A1 X-RAY DETECTOR 有权
标题翻译： X射线探测器
公开(公告)号：US20110180889A1
公开(公告)日：2011-07-28
申请号：US12975568
申请日：2010-12-22
申请人： Kwan-Wook JUNG , Dong-Hyuk KIM , Woo-Jae LIM , Jea-Eun RYU
发明人： Kwan-Wook JUNG , Dong-Hyuk KIM , Woo-Jae LIM , Jea-Eun RYU
IPC分类号： H01L27/14
CPC分类号： H01L27/14663
摘要： An X-ray detector includes a substrate; a gate line that is extended in a first direction on the substrate; a gate electrode that is extended from the gate line; a semiconductor layer that is positioned on the gate electrode; a source electrode and drain electrode that are positioned on the semiconductor layer; a lower electrode that is extended from the drain electrode; a photodiode that is positioned on the lower electrode; a first insulation layer that is positioned on the source electrode and the drain electrode and that includes a first opening that exposes the source electrode; and a data line that is extended in a second direction intersecting a first direction on the first insulation layer to intersect the gate line with the first insulation layer interposed between the data line and the gate line, and the data line being electrically connected to the source electrode through the first opening.
摘要翻译： X射线检测器包括：基板; 在基板上沿第一方向延伸的栅极线; 从栅极线延伸的栅电极; 位于栅电极上的半导体层; 位于所述半导体层上的源电极和漏电极; 从所述漏电极延伸的下电极; 位于下电极上的光电二极管; 第一绝缘层，其位于源电极和漏电极上，并且包括暴露源电极的第一开口; 以及数据线，其在与所述第一绝缘层上的第一方向相交的第二方向上延伸以与所述栅极线相交，并且所述第一绝缘层插入在所述数据线和所述栅极线之间，并且所述数据线电连接到所述源极电极通过第一个开口。

2. 发明申请

US20110201166A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110201166A1
公开(公告)日：2011-08-18
申请号：US13021029
申请日：2011-02-04
申请人： Hoi-Sung CHUNG , Dong-Suk SHIN , Dong-Hyuk KIM , Jung-Shik HEO , Myung-Sun KIM
发明人： Hoi-Sung CHUNG , Dong-Suk SHIN , Dong-Hyuk KIM , Jung-Shik HEO , Myung-Sun KIM
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L21/823807 , H01L21/30608 , H01L21/3086 , H01L21/823814 , H01L29/165 , H01L29/6653 , H01L29/66636 , H01L29/7834 , H01L29/7848 , Y10S438/938
摘要： A method of manufacturing a semiconductor device includes forming a gate electrode on a semiconductor substrate and a sidewall spacer on the gate electrode. Then, a portion of the semiconductor substrate at both sides of the sidewall spacer is partially etched to form a trench. A SiGe mixed crystal layer is formed in the trench. A silicon layer is formed on the SiGe mixed crystal layer. A portion of the silicon layer is partially etched using an etching solution having different etching rates in accordance with a crystal direction of a face of the silicon layer to form a capping layer including a silicon facet having an (111) inclined face.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成栅电极和在栅电极上形成侧壁间隔物。然后，部分地蚀刻在侧壁间隔物的两侧的半导体衬底的一部分以形成沟槽。在沟槽中形成SiGe混合晶体层。在SiGe混晶层上形成硅层。使用根据硅层的表面的晶体方向具有不同蚀刻速率的蚀刻溶液来部分蚀刻硅层的一部分，以形成包括具有（111）倾斜面的硅小面的覆盖层。

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