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111. 发明授权

US6051063A Diamond wafer and method of producing a diamond wafer 失效
标题翻译：金刚石晶片及其制造方法
公开(公告)号：US6051063A
公开(公告)日：2000-04-18
申请号：US975254
申请日：1997-11-21
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译：一种金刚石晶片，其包括在基板上生长的用于制造表面声波装置，半导体装置或耐磨盘的基板和（100）定向多晶金刚石膜。通过将材料气体中的烃比率从较高值改变为较低值来生产（100）取向膜。晶片单调失真，失真高度H满足2微米

112. 发明授权

US5838090A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5838090A
公开(公告)日：1998-11-17
申请号：US972162
申请日：1997-11-17
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H3/08 , H03H3/10 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/00
CPC分类号： H03H9/02582
摘要： An object of the present invention is to improve an SAW propagation velocity V, an electromechanical coupling coefficient (K.sup.2), and a delay time temperature coefficient (TCD) to achieve a high-frequency SAW device and power saving and size reduction of the device. An SAW device according to the present invention includes at least diamond as a substrate material, a c-axis oriented polycrystalline LiNbO.sub.3 layer, arranged on the diamond, an SiO.sub.2 layer arranged on the LiNbO.sub.3 layer, and an interdigital transducer and uses an SAW in an nth mode (n=0, 1, 2: wavelength: .lambda. .mu.m). When the thickness of the LiNbO.sub.3 layer is t.sub.1 (.mu.m), and the thickness of the SiO.sub.2 layer is t.sub.2 (.mu.m), kh.sub.1 =2.pi.(t.sub.1 /.lambda.) and kh.sub.2 =2.pi.(t.sub.2 /.lambda.) fall within predetermined ranges. In addition, the mode of the SAW is selected. With this arrangement, an SAW device having a propagation velocity (V) of 7,000 m/s or more, an electromechanical coupling coefficient (K.sup.2) of 2% or more, and a coefficient TCD of .+-.10 ppm/.degree.C. or less, which is the stability of the device frequency with respect to the temperature, can be provided.
摘要翻译：本发明的目的是提高SAW传播速度V，机电耦合系数（K2）和延迟时间温度系数（TCD），以实现高频SAW器件，并且节省设备的功率和尺寸。根据本发明的SAW器件至少包括作为衬底材料的金刚石，布置在金刚石上的c轴取向的多晶LiNbO 3层，布置在LiNbO 3层上的SiO 2层，以及叉指换能器，并且使用第n个模式（n = 0,1,2：波长：λm）。当LiNbO 3层的厚度为t1（μm），SiO 2层的厚度为t2（μm）时，kh1 =2π（t1 /λ），kh2 =2π（t2 /λ）落在规定的范围内范围。此外，选择SAW的模式。根据该结构，具有传播速度（V）为7000m / s以上，机电耦合系数（K2）为2％以上，系数TCD为+/- 10ppm /℃的SAW器件，或可以提供相对于温度的装置频率的稳定性。

113. 发明授权

US5777422A Diamond-ZnO surface acoustic wave device having relatively thinner ZnO piezoelectric layer 失效
标题翻译：具有较薄的ZnO压电层的金刚石 - ZnO表面声波器件
公开(公告)号：US5777422A
公开(公告)日：1998-07-07
申请号：US720369
申请日：1996-09-27
申请人： Hiroyuki Kitabayashi , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Shin-ichi Shikata
发明人： Hiroyuki Kitabayashi , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Shin-ichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/08
CPC分类号： H03H9/02582
摘要： The present invention directed to a SAW device comprising a diamond layer thinner ZnO layer, which can be operated at higher frequency, with superior characteristics including less energy loss. The first SAW device according to the present invention comprises a layer constitution shown in FIG. 23, wherein, for 0th mode surface acoustic wave having a wavelength .lambda., a parameter kh3 =(2.pi./.lambda.)t3 satisfies: 0.0470.ltoreq.kh3.ltoreq.0.0625, and wherein a parameter kh1 =(2.pi./.lambda.)t1 and a parameter kh2=(2.pi./.lambda.)t2 are given within a region A-B-C-D-E-F-A in a two-dimensional Cartesian coordinate graph having ordinate axis of the kh1 and abscissa axis of kh2, the outer edge of the region A-B-C-D-E-F-A being given by a closed chain in the Cartesian coordinate, consisting of points A, B, C, D, E, and F, and lines A-B, B-C, C-D, D-E, E-F and F-A, as shown in a two-dimensional Cartesian coordinate graph of FIG. 3.
摘要翻译：本发明涉及一种SAW器件，其包括可以以更高频率操作的金刚石层更薄的ZnO层，具有包括较少能量损失的优异特性。根据本发明的第一SAW器件包括图1所示的层结构。 23，其中，对于具有波长λ的第0模式声表面波，参数kh3 =（2π/λ）t3满足：0.0470≤kh3≤0.0625，并且其中参数kh1 =（2π/λ） t1和参数kh2 =（2 pi /λ）t2在具有kh1和横坐标轴kh2的纵坐标轴的二维笛卡尔坐标图中的区域ABCDEFA内给出，区域ABCDEFA的外边缘由a 由点A，B，C，D，E和F以及线AB，BC，CD，DE，EF和FA组成的笛卡尔坐标中的闭合链，如图2的二维笛卡尔坐标图所示。 3。

114. 发明授权

US5160869A Surface acoustic wave device 失效
公开(公告)号：US5160869A
公开(公告)日：1992-11-03
申请号：US634321
申请日：1990-12-26
申请人： Hideaki Nakahata , Naoji Fujimori
发明人： Hideaki Nakahata , Naoji Fujimori
IPC分类号： H03H9/145 , H03H9/02
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device which comprises a diamond or diamond-like carbon layer, a ZnO piezoelectric layer and a comb-like electrode and has a structure having a large surface wave propagation velocity and a large electromechanical coupling factor which are achieved by defining a thickness of the ZnO layer and a mode.

115. 发明授权

US5081438A Thermistor and its preparation 失效
标题翻译：热敏电阻及其制备
公开(公告)号：US5081438A
公开(公告)日：1992-01-14
申请号：US506191
申请日：1990-04-09
申请人： Hideaki Nakahata , Naoji Fujimori
发明人： Hideaki Nakahata , Naoji Fujimori
IPC分类号： H01C7/04 , H01C17/14
CPC分类号： H01C7/041 , H01C17/14 , Y10T29/49085
摘要： A thermistor having a temperature detecting part which has a temperature sensing part made of a vapor phase deposited semiconductive diamond film, a metal electrode layer formed on one surface of the semiconductive diamond film, and at least one lead wire connected with the metal electrode layer provided that at least 50% of a total volume of the temperature sensing part and the metal electrode layer is made of the vapor phase deposited diamond.

116. 发明授权

US4982243A Schottky contact 失效
标题翻译：肖特基接触
公开(公告)号：US4982243A
公开(公告)日：1991-01-01
申请号：US329825
申请日：1989-03-28
申请人： Hideaki Nakahata , Takahiro Imai , Hiromu Shiomi , Naoji Fujimori
发明人： Hideaki Nakahata , Takahiro Imai , Hiromu Shiomi , Naoji Fujimori
IPC分类号： H01L29/16 , H01L21/205 , H01L29/04 , H01L29/423 , H01L29/47 , H01L29/861 , H01L29/868 , H01L29/872
CPC分类号： H01L33/40 , H01L29/045 , H01L29/47 , H01L29/872 , H01L33/0033 , H01L33/34
摘要： A schottky contact which comprises a single crystal diamond substrate, an epitaxial diamond layer formed on said substrate and a schottky electrode layer formed on said epitaxial diamond layer, wherein said substrate has at least one polished surface which inclines at an angle of not larger than 10.degree. to a (100) plane and said epitaxial diamond layer is formed on said surface, provides a device which has good thermal resistance and environmental resistance and which device can be easily highly integrated.
摘要翻译：一种肖特基接触，其包括单晶金刚石基底，形成在所述基底上的外延金刚石层和形成在所述外延金刚石层上的肖特基电极层，其中所述基底具有至少一个抛光表面，其倾斜不大于10° DEG至（100）面，并且所述外延金刚石层形成在所述表面上，提供具有良好耐热性和耐环境性的器件，并且该器件可以容易地高度集成。

117. 发明授权

US08822977B2 Photodetector and method of manufacturing the photodetector 有权
标题翻译：光电探测器及其制造方法
公开(公告)号：US08822977B2
公开(公告)日：2014-09-02
申请号：US13806585
申请日：2011-06-15
申请人： Katsushi Akita , Takashi Ishizuka , Kei Fujii , Hideaki Nakahata , Youichi Nagai , Hiroshi Inada , Yasuhiro Iguchi
发明人： Katsushi Akita , Takashi Ishizuka , Kei Fujii , Hideaki Nakahata , Youichi Nagai , Hiroshi Inada , Yasuhiro Iguchi
IPC分类号： H01L29/06 , H01L31/18 , H01L31/0352 , H01L31/0304 , B82Y20/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03046 , H01L31/18 , H01L31/1844 , Y02E10/544
摘要： A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.
摘要翻译：提供了一种光电检测器和制造该光检测器的方法，其中从包括1.3μm到长波长侧的短波长侧的近红外区域抑制了灵敏度的变化。光检测器在InP衬底上包括II型多量子阱结构的吸收层，其包括GaAsSb层和InGaAs层的重复结构，并且在包括1.3μm和2.0μm的波长的近红外区域中具有灵敏度。在1.3μm波长下的灵敏度与2.0μm波长下的灵敏度之比不小于0.5但不大于1.6。

118. 发明授权

US08415180B2 Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device 有权
标题翻译：制造晶圆产品的方法和用于制造氮化镓基半导体光学器件的方法
公开(公告)号：US08415180B2
公开(公告)日：2013-04-09
申请号：US13318039
申请日：2010-03-01
申请人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： H01L21/00
CPC分类号： C23C16/0227 , C23C16/0272 , C23C16/303 , C30B25/183 , C30B29/406 , H01L33/007
摘要： Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S105, a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11a of a gallium oxide substrate 11. After the growth of the buffer layer 13, while supplying a gas G2, which contains hydrogen and nitrogen, into a growth reactor 10, the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.
摘要翻译：本发明提供一种制造晶片产品的方法，该晶片产品包括在氧化镓衬底上生长的有源层并且能够提高发光强度。在步骤S105中，在氧化镓衬底11的主表面11a上以600摄氏度生长由诸如GaN，AlGaN或AlN的III族氮化物构成的缓冲层13.在缓冲层13生长之后，同时将含有氢和氮的气体G2供给到生长反应器10中，将氧化镓衬底11和缓冲层13在生长反应器11中的气氛中以1050摄氏度暴露。在改性缓冲层上生长III族氮化物半导体层15。改性缓冲层包括例如空隙。 III族氮化物半导体层15可以由GaN和AlGaN构成。当由这些材料形成III族氮化物半导体层15时，在改性缓冲层14上获得优异的晶体质量。

119. 发明申请

US20130048838A1 SEMICONDUCTOR WAFER, LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTION DEVICE, OPTICAL SENSOR DEVICE, AND PROCESS FOR PRODUCTION OF SEMICONDUCTOR WAFER 有权
标题翻译：半导体晶体管，光接收元件，光接收元件阵列，混合型检测器件，光学传感器器件以及半导体器件的制造工艺
公开(公告)号：US20130048838A1
公开(公告)日：2013-02-28
申请号：US13640922
申请日：2010-12-03
申请人： Hiroki Mori , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Kouhei Miura , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
发明人： Hiroki Mori , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Kouhei Miura , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
IPC分类号： H01L31/101 , H01L31/18 , H01L33/06
CPC分类号： H01L31/03046 , B82Y20/00 , H01L27/1446 , H01L27/1467 , H01L31/035236 , Y02E10/544 , Y02P70/521
摘要： A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.
摘要翻译：光接收元件包括InP衬底1，具有MQW且位于InP衬底1上的光接收层3，位于光接收层3上的接触层5，从接触层5的表面与光接收层和与p型区域形成欧姆接触的p侧电极11。光接收元件的特征在于MQW具有包括In x Ga 1-x As（0.38和nlE; x＆lt; lE; 0.68）层和GaAs1-ySby（0.25＆amp; nlE; y＆nlE; 0.73）层的层的叠层结构，并且在GaAs1 -ySby层，InP衬底侧的部分中的Sb含量y大于相对侧的部分中的Sb含量y。

120. 发明申请

US20120003770A1 METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：用于形成外延晶体的方法和用于制造半导体器件的方法
公开(公告)号：US20120003770A1
公开(公告)日：2012-01-05
申请号：US13202419
申请日：2010-02-10
申请人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
发明人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/20 , H01L33/32 , B82Y40/00
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/16 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/007
摘要： A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.
摘要翻译：提供了一种用于形成外延晶片的方法，其可以在氧化镓区域上使得能够以良好的晶体质量生长氮化镓基半导体。在步骤S107中，生长AlN缓冲层13。在步骤S108中，在时刻t5，将除了氮以外的氢，三甲基铝和氨的原料气G1供给到生长反应器10中，以在主面11a上生长AlN缓冲层13。 AlN缓冲层13被称为低温缓冲层。在开始形成缓冲层13之后，在步骤S109中，在时刻t6开始供给氢（H2）。在时间t6，H2，N2，TMA和NH3被供应到生长反应器10中。在时间t6和t7之间，氢的供应量增加，而在时间t7，氢的增加被终止以提供恒定的量的氢。在时间t7，将H2，TMA和NH3供应到生长反应器10中。

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