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    • 94. 发明授权
    • Shield or ring surrounding semiconductor workpiece in plasma chamber
    • 在等离子体室内围绕半导体工件的屏蔽或环
    • US06689249B2
    • 2004-02-10
    • US09947194
    • 2001-09-04
    • Kuang-Han KeBryan Y. PuHongching ShanJames WangHenry FongZongyu LiMichael D. Welch
    • Kuang-Han KeBryan Y. PuHongching ShanJames WangHenry FongZongyu LiMichael D. Welch
    • C23F108
    • H01L21/67126H01J37/32623H01J37/32633H01J37/3266H01L21/6831H01L21/6833H01L21/68721H01L21/68735H02N13/00Y10S156/915
    • A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.
    • 围绕等离子体室中的半导体工件的环或环。 根据一个方面,所述环具有提升的套环部分,其内表面以与工件的平面成钝角定向,该角度优选为135°。 这种角度取向导致离子轰击提升的套环的内表面沿更平行于工件的平面的方向散射,从而减少工件周边处的任何介电屏蔽的侵蚀,并且改善等离子体中的空间不均匀性 由于这种周边附近的任何过量的离子密度而产生的过程。 在第二方面,工件被电介质屏蔽围绕,屏蔽被非介电环覆盖,该绝缘环保护介电屏蔽免受过程气体的反应或腐蚀。 在第三方面中,电介质屏蔽体足够薄以将来自阴极的实质功率耦合到等离子体,从而改善靠近工件周边的等离子体工艺的空间均匀性。 在第四方面,方法性能的方位不均匀性可以通过围绕工件的高架轴环和/或介电屏蔽的尺寸的相应的方位角变化来改善。
    • 100. 发明授权
    • Convertiplane
    • 转角飞机
    • US08777150B2
    • 2014-07-15
    • US13560219
    • 2012-07-27
    • James Wang
    • James Wang
    • B64C27/22B64C39/00B64C29/00B64C15/12B64C27/52
    • B64C29/0033
    • There is described a convertiplane comprising a pair of semi-wings, a first and a second rotor which may rotate about relative first axes and tilt about relative second axes together with first axes with respect to semi-wings between a helicopter mode and an aeroplane mode; first axes are, in use, transversal to a longitudinal direction of convertiplane in helicopter mode, and are, in use, substantially parallel to longitudinal direction in aeroplane mode; first and second rotors may tilt about relative second axes independently of each other.
    • 描述了一种包括一对半翼的转换平面,第一和第二转子,其可围绕相对第一轴线旋转,并且围绕相对第二轴线相对于直升机模式和飞行模式之间的半翼部的第一轴线倾斜 ; 在使用中,第一轴在直升机模式下横向于转向平面的纵向方向,并且在使用中在飞行模式下基本上平行于纵向方向; 第一和第二转子可以相对于彼此独立地相对于第二轴倾斜。