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    • 2. 发明授权
    • 1,3,5-tris (arylamino) benzenes
    • 1,3,5-三(芳基氨基)苯
    • US07271291B2
    • 2007-09-18
    • US10549166
    • 2004-03-15
    • Hiroshi InadaNobutaka AkashiTomoko Hayashi
    • Hiroshi InadaNobutaka AkashiTomoko Hayashi
    • C07C211/54H01L35/24
    • C07C211/58H01L51/0059H01L51/006H01L51/5048
    • The invention provides 1,3,5-tris(arylamino)benzenes represented by the general formula (I) wherein A is naphthyl, anthryl or phenanthryl group, and R is hydrogen atom or diarylamino group. These 1,3,5-tris(arylamino)benzenes have oxidation potentials in the range of about 0.5-0.6V, excellent reversibility in oxidation-reduction process, high glass transition temperatures and high heat resistance, so that they can form practicable organic semiconductor film readily by a coating method or a vacuum deposition method. In addition, they are capable of forming stable and durable amorphous film useful as high performance organic semiconductors at normal temperatures or higher with no aid of binder resins, that is, by themselves.
    • 本发明提供由通式(I)表示的1,3,5-三(芳氨基)苯,其中A为萘基,蒽基或菲基,R为氢原子或二芳基氨基。 这些1,3,5-三(芳基氨基)苯具有在约0.5-0.6V的范围内的氧化电位,氧化还原过程的优异可逆性,高玻璃化转变温度和高耐热性,使得它们可以形成可行的有机半导体 通过涂布方法或真空沉积方法容易地制备薄膜。 此外,它们能够在常温或更高温度下形成稳定且耐用的无定形薄膜,无需粘合剂树脂,即本身就可以使用。
    • 6. 发明申请
    • Novel 1, 3, 5 tris (arylamino) benzenes
    • 新的1,3,5-三(芳基氨基)苯
    • US20060173216A1
    • 2006-08-03
    • US10549166
    • 2004-03-15
    • Hiroshi InadaNobutaka AkashiTomoko Hayashi
    • Hiroshi InadaNobutaka AkashiTomoko Hayashi
    • C07C211/50
    • C07C211/58H01L51/0059H01L51/006H01L51/5048
    • The invention provides 1,3,5-tris(arylamino)benzenes represented by the general formula (I) wherein A is naphthyl, anthryl or phenanthryl group, and R is hydrogen atom or diarylamino group. These 1,3,5-tris(arylamino)benzenes have oxidation potentials in the range of about 0.5-0.6V, excellent reversibility in oxidation-reduction process, high glass transition temperatures and high heat resistance, so that they can form practicable organic semiconductor film readily by a coating method or a vacuum deposition method. In addition, they are capable of forming stable and durable amorphous film useful as high performance organic semiconductors at normal temperatures or higher with no aid of binder resins, that is, by themselves.
    • 本发明提供由通式(I)表示的1,3,5-三(芳氨基)苯,其中A为萘基,蒽基或菲基,R为氢原子或二芳基氨基。 这些1,3,5-三(芳基氨基)苯具有在约0.5-0.6V的范围内的氧化电位,氧化还原过程的优异可逆性,高玻璃化转变温度和高耐热性,使得它们可以形成可行的有机半导体 通过涂布方法或真空沉积方法容易地制备薄膜。 此外,它们能够在常温或更高温度下形成稳定且耐用的无定形薄膜,无需粘合剂树脂,即本身就可以使用。