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91. 发明申请

US20070054476A1 Method of producing a nitride semiconductor device and nitride semiconductor device 有权
标题翻译：氮化物半导体器件和氮化物半导体器件的制造方法
公开(公告)号：US20070054476A1
公开(公告)日：2007-03-08
申请号：US11514979
申请日：2006-09-05
申请人： Seiji Nakahata , Koji Uematsu , Hideaki Nakahata
发明人： Seiji Nakahata , Koji Uematsu , Hideaki Nakahata
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： H01L21/7813 , H01L21/02389 , H01L21/0254 , H01L21/02609 , H01L21/02647 , H01L29/2003 , H01L29/34 , H01L29/66462 , H01L29/7787 , H01L29/872 , H01L33/007 , H01L33/0079
摘要： AlxInyGa1-x-yN (0≦x≦1; 0≦x≦1; 0≦x+y≦1) layered device chips are produced by the steps of preparing a defect position controlled substrate of AlxInyGa1-x-yN (0≦x≦1; 0≦y≦1; 0≦x+y≦1) having a closed loop network defect accumulating region H of slow speed growth and low defect density regions ZY of high speed growth enclosed by the closed loop network defect accumulating region H, growing epitaxial upper layers B selectively on the low defect density regions ZY, harmonizing outlines and insides of device chips composed of the upper layers B with the defect accumulating region H and the low defect density regions ZY respectively, forming upper electrodes on the upper layers B or not forming the electrodes, dissolving bottom parts of the upper layers B by laser irradiation or mechanical bombardment, and separating the upper layer parts B as device chips C from each other and from the substrate S. Chip-separation is done instantly by the high power laser irradiation or mechanical shock without cutting the substrate S. The defect position controlled substrate S is repeatedly reused.
摘要翻译：（0 <= x <= 1; 0 <= x <= 1; 0 <= 1; x + y <= 1）层状器件芯片是通过以下步骤制备的：制备Al x In y y Ga 1-xy x的缺陷位置控制衬底，具有慢速生长的闭环网络缺陷累积区域H和低缺陷密度区域ZY的低于N的N个（0 <= x <= 1; 0 <= y <= 1; 0 <= x + y < 由闭环网络缺陷积聚区域H包围的高速生长，选择性地在低缺陷密度区域ZY上生长外延上层B，使由上层B构成的器件芯片的缺陷累积区域H和低缺陷密度区域ZY，在上层B上形成上层电极或不形成电极，通过激光照射或机械轰击溶解上层B的底部，并将上层部件B作为器件芯片C彼此分离，芯片分离是通过高功率激光照射或机械冲击立即完成，而不切割基板S.缺陷位置控制的基板S被反复重复使用。

92. 发明授权

US06642813B1 Surface acoustic wave device utilizing a ZnO layer and a diamond layer 有权
标题翻译：使用ZnO层和金刚石层的声表面波器件
公开(公告)号：US06642813B1
公开(公告)日：2003-11-04
申请号：US10089816
申请日：2002-04-04
申请人： Katsuhiro Itakura , Akihiro Hachigo , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
发明人： Katsuhiro Itakura , Akihiro Hachigo , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H03H964
CPC分类号： H03H9/02582
摘要： A surface acoustic wave (SAW) device that is made with diamond, that has high efficiency, and that can be operated at high frequencies, particularly from 9.5 to 10.5 GHz. The SAW device comprises a diamond layer formed singly or formed on a substrate, a ZnO piezoelectric layer, interdigital transducers (IDTs), and a short-circuiting electrode as required. The SAW device has a structure in which the thickness of the ZnO layer, the wavelength of a harmonic of the SAW, and the line width of the IDTs fall in a specified range. With this structure, a large electromechanical coupling coefficient is obtained in a high-frequency range of 10 GHz band by utilizing the third or fifth harmonic of the SAW.
摘要翻译：具有金刚石的表面声波（SAW）器件，其具有高效率，并且可以在高频，特别是9.5至10.5GHz的频率下操作。 SAW器件包括单独形成或形成在衬底上的金刚石层，ZnO压电层，叉指式换能器（IDT）和根据需要的短路电极。 SAW器件具有其中ZnO层的厚度，SAW的谐波的波长和IDT的线宽落在特定范围内的结构。利用这种结构，通过利用SAW的第三或第五谐波，在10GHz频带的高频范围内获得大的机电耦合系数。

93. 发明授权

US06320296B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 失效
公开(公告)号：US06320296B1
公开(公告)日：2001-11-20
申请号：US09825887
申请日：2001-04-05
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： H10L4108
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.

94. 发明授权

US5646468A Diamond-LiTaO.sub.3 surface acoustic wave device 失效
标题翻译： Diamond-LiTaO3弹性表面波装置
公开(公告)号：US5646468A
公开(公告)日：1997-07-08
申请号：US660902
申请日：1996-06-07
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo , Shin-ichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo , Shin-ichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H03H9/00 , H01L41/08
CPC分类号： H03H9/02582
摘要： The present invention directed to a SAW device comprising a diamond layer and an LiTaO.sub.3 layer, which can be operated at the frequency of 3 GHz or higher, with superior durability and less energy loss. The SAW device for 1st mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention comprises: a diamond layer, an interdigital transducer formed onto the diamond layer, and a polycrystalline C-axis-oriented LiTaO.sub.3 layer formed over the interdigital transducer; wherein the SAW device satisfies a relationship of 0.4.ltoreq.kh.sub.1 .ltoreq.1.2, where a parameter kh.sub.1 is defined as kh.sub.1 =2.pi.(t.sub.1 /.lambda.), and t.sub.1 (.mu.m) is the thickness of the LiTaO.sub.3 layer.
摘要翻译：本发明涉及一种包括金刚石层和LiTaO 3层的SAW器件，其可以以3GHz或更高的频率工作，具有优异的耐久性和较少的能量损失。根据本发明的波长λ（μm）的第一模式表面声波的SAW器件包括：金刚石层，形成在金刚石层上的叉指换能器，以及形成在该金刚石层上的多晶C轴取向的LiTaO 3层叉指换能器其中所述SAW器件满足0.4≤kh1≤1.2的关系，其中参数kh1被定义为kh1 =2π（t1 /λ），并且t1（μm）是LiTaO3层的厚度。

95. 发明授权

US5426340A Surface acoustic wave device and method of manufacturing the same 失效
标题翻译：表面声波装置及其制造方法
公开(公告)号：US5426340A
公开(公告)日：1995-06-20
申请号：US188536
申请日：1994-01-27
申请人： Kenjiro Higaki , Hideaki Nakahata , Akihiro Hachigo , Shinichi Shikata
发明人： Kenjiro Higaki , Hideaki Nakahata , Akihiro Hachigo , Shinichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/64 , H01L41/08
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device includes a hard layer comprising diamond or a diamond-like carbon film, and a piezoelectric layer formed on the hard layer. It further includes a paired interdigital transducer and grounding electrode, which perform an electro-mechanical conversion, with the piezoelectric layer arranged therebetween. Then, the feature of the present invention is to form the grounding electrode of a conductive oxide. It is preferred that the conductive oxide is formed by doping an impurity into a piezoelectric material of ZnO. Therefore, the adhesion between the piezoelectric layer and the hard layer, and the grounding electrodes is increased, so that the device yield is enhanced, and a high electromechanical coupling coefficient can be achieved in a high frequency range.
摘要翻译：表面声波装置包括由金刚石或类金刚石碳膜构成的硬质层和形成在硬质层上的压电层。它还包括一个成对的叉指式换能器和接地电极，它们进行机电转换，压电层位于它们之间。然后，本发明的特征在于形成导电氧化物的接地电极。优选的是，通过将杂质掺杂到ZnO的压电材料中形成导电氧化物。因此，压电层与硬质层和接地电极之间的粘附性增加，从而提高了器件成品率，并且可以在高频范围内实现高的机电耦合系数。

96. 发明授权

US5401544A Method for manufacturing a surface acoustic wave device 失效
标题翻译：声表面波装置的制造方法
公开(公告)号：US5401544A
公开(公告)日：1995-03-28
申请号：US109394
申请日：1993-08-19
申请人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
发明人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/145 , H01L41/08 , B05D3/06 , C23C16/20
CPC分类号： H03H3/08 , H03H9/14538
摘要： A surface acoustic wave device which can operate at a higher frequency range is produced by irradiation with a focused ion beam to produce a narrower electrode width and narrower spacing width between neighboring electrodes in contact with a piezoelectric body, without degrading the reliability of the device. The surface acoustic wave device includes a piezoelectric body 3 and interdigital electrodes 2a and 2b in close contact with the piezoelectric body 3 and formed by using the focused ion beam. In order to increase the frequency of the device, the piezoelectric body 3 may be formed on a substrate 1, for example of diamond.
摘要翻译：可以通过用聚焦离子束照射来产生能够在较高频率范围内工作的表面声波装置，以产生与压电体接触的相邻电极之间的较窄的电极宽度和较窄的间隔宽度，而不会降低装置的可靠性。表面声波装置包括与压电体3紧密接触并通过使用聚焦离子束形成的压电体3和叉指电极2a和2b。为了增加器件的频率，压电体3可以形成在例如金刚石的衬底1上。

97. 发明授权

US5329208A Surface acoustic wave device and method for producing the same 失效
标题翻译：声表面波装置及其制造方法
公开(公告)号：US5329208A
公开(公告)日：1994-07-12
申请号：US894598
申请日：1992-06-05
申请人： Takahiro Imai , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
发明人： Takahiro Imai , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/02 , H03H9/25 , H01L41/18
CPC分类号： H03H9/02582 , H03H9/02622 , Y10T29/42
摘要： A surface acoustic wave device having a diamond layer, a piezoelectric layer and a comb-like electrode, in which the piezoelectric layer and the comb-like electrode are formed on a surface of the diamond layer, which surface has been contacted to a substrate used in the formation of the diamond layer by a vapor phase growth method, which device has high stability and can be produced economically.
摘要翻译：具有金刚石层，压电层和梳状电极的弹性表面波器件，其中压电层和梳状电极形成在金刚石层的表面上，该表面已经与所使用的衬底接触在通过气相生长法形成金刚石层时，该装置具有高稳定性并且可以经济地生产。

98. 发明授权

US5320865A Method of manufacturing a surface acoustic wave device 失效
标题翻译：声表面波装置的制造方法
公开(公告)号：US5320865A
公开(公告)日：1994-06-14
申请号：US947283
申请日：1992-09-16
申请人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
发明人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H01L41/22
CPC分类号： H03H3/08 , H03H9/02582 , Y10T29/42
摘要： A method of manufacturing a surface acoustic wave device which has a smaller insertion loss and which operates at higher frequency than a conventional surface acoustic wave device is provided. The surface acoustic wave device includes a substrate, a diamond layer formed on the substrate, a piezoelectric layer formed on the diamond layer, and electrodes formed on any of the substrate, the diamond layer and the piezoelectric layer. The piezoelectric layer is formed by the laser ablation method. The insertion loss of this acoustic wave device is small even in a high frequency range of several hundreds MHz to GHz. Therefore, the device can be used as a frequency filter, a resonator, a delay line, a convolver, a correlator and the like.
摘要翻译：提供一种制造具有较小的插入损耗并且以比常规的声表面波器件更高的频率工作的声表面波器件的方法。表面声波装置包括基板，形成在基板上的金刚石层，形成在金刚石层上的压电层，以及形成在基板，金刚石层和压电层之一上的电极。压电层通过激光烧蚀法形成。即使在几百MHz至GHz的高频范围内，该声波器件的插入损耗也很小。因此，该装置可以用作频率滤波器，谐振器，延迟线，卷积器，相关器等。

99. 发明授权

US5235236A Surface acoustic wave device 失效
标题翻译：表面声波设备
公开(公告)号：US5235236A
公开(公告)日：1993-08-10
申请号：US937983
申请日：1992-08-28
申请人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
发明人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H9/25 , H03H3/08 , H03H9/02
CPC分类号： H03H3/08 , H03H9/02582 , H03H9/02976
摘要： Disclosed herein is a surface acoustic wave device whose characteristics can be stably maintained against temperature changes. The surface acoustic wave device has an insulating diamond layer (2), which is provided thereon with a part (3) defined by a pair of interdigital electrodes (7, 7') and a piezoelectric layer (8), and a thermistor (4) made of semi-conductive diamond. The thermistor (4) quickly detects the temperature of the device.

100. 发明授权

US08362521B2 III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device 有权
标题翻译： III族氮化物半导体晶体，III族氮化物半导体器件和发光器件
公开(公告)号：US08362521B2
公开(公告)日：2013-01-29
申请号：US12767783
申请日：2010-04-26
申请人： Seiji Nakahata , Hideaki Nakahata , Koji Uematsu , Makoto Kiyama , Youichi Nagai , Takao Nakamura
发明人： Seiji Nakahata , Hideaki Nakahata , Koji Uematsu , Makoto Kiyama , Youichi Nagai , Takao Nakamura
IPC分类号： H01L31/102 , H01L29/20
CPC分类号： H01L33/007 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02645 , H01L33/0075 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12032 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.
摘要翻译：尺寸适合于半导体器件的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺以及从起始基板分离由III族氮化物半导体晶体基板和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。

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