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1. 发明申请

US20050252894A1 Laser annealing device and method for producing thin-film transistor 审中-公开
标题翻译：激光退火装置及薄膜晶体管的制造方法
公开(公告)号：US20050252894A1
公开(公告)日：2005-11-17
申请号：US11177574
申请日：2005-07-08
申请人： Yutaka Imai , Nobuhiko Umezu , Akihiko Asano , Shin Hotta , Koichi Tatsuki , Atsushi Fukumoto , Shigeo Kubota
发明人： Yutaka Imai , Nobuhiko Umezu , Akihiko Asano , Shin Hotta , Koichi Tatsuki , Atsushi Fukumoto , Shigeo Kubota
IPC分类号： B23K26/06 , B23K26/067 , H01L21/20 , H01L21/268 , B23K26/02
CPC分类号： B23K26/0613 , B23K26/0604 , B23K26/0622 , B23K26/067 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285
摘要： A laser annealing device (10) includes a laser oscillator (12), radiating a pulsed laser light beam of a preset period, and an illuminating optical system (15) for illuminating a pulsed laser light beam to an amorphous silicon film (1). The illuminating optical system (15) manages control for moving a laser spot so that a plural number of light pulses will be illuminated on the same location on the amorphous silicon film (1). The laser oscillator (12) radiates a laser light beam of a pulse generation period shorter than the reference period. The reference period is a time interval as from the radiation timing of illumination of a pulsed laser light beam on the surface of the film (1) until the timing of reversion of the substrate temperature raised due to the illumination of the laser light beam to the original substrate temperature.
摘要翻译：激光退火装置（10）包括激光振荡器（12），辐射预设周期的脉冲激光束，以及用于将脉冲激光束照射到非晶硅膜（1）的照明光学系统（15）。照明光学系统（15）管理用于移动激光光斑的控制，使得多个光脉冲将被照射在非晶硅膜（1）上的相同位置。激光振荡器（12）辐射比参考周期短的脉冲发生时段的激光束。参考周期是从在膜（1）的表面上的脉冲激光束的照射的辐射定时直到由于激光束照射到基板温度升高的定时的时间间隔原始基板温度。

2. 发明申请

US20070178674A1 LASER ANNEALING DEVICE AND METHOD FOR PRODUCING THIN-FILM TRANSISTOR 审中-公开
标题翻译：激光退火装置及其生产薄膜晶体管的方法
公开(公告)号：US20070178674A1
公开(公告)日：2007-08-02
申请号：US11690232
申请日：2007-03-23
申请人： Yutaka Imai , Nobuhito Umezu , Akihiko Asano , Shin Hotta , Koichi Tatsuki , Atsushi Fukumoto , Shigeo Kubota
发明人： Yutaka Imai , Nobuhito Umezu , Akihiko Asano , Shin Hotta , Koichi Tatsuki , Atsushi Fukumoto , Shigeo Kubota
IPC分类号： H01L21/268
CPC分类号： B23K26/0613 , B23K26/0604 , B23K26/0622 , B23K26/067 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285
摘要： A laser annealing device (10) includes a laser oscillator (12), radiating a pulsed laser light beam of a preset period, and an illuminating optical system (15) for illuminating a pulsed laser light beam to an amorphous silicon film (1). The illuminating optical system (15) manages control for moving a laser spot so that a plural number of light pulses will be illuminated on the same location on the amorphous silicon film (1). The laser oscillator (12) radiates a laser light beam of a pulse generation period shorter than the reference period. The reference period is a time interval as from the radiation timing of illumination of a pulsed laser light beam on the surface of the film (1) until the timing of reversion of the substrate temperature raised due to the illumination of the laser light beam to the original substrate temperature.
摘要翻译：激光退火装置（10）包括激光振荡器（12），辐射预设周期的脉冲激光束，以及用于将脉冲激光束照射到非晶硅膜（1）的照明光学系统（15）。照明光学系统（15）管理用于移动激光光斑的控制，使得多个光脉冲将被照射在非晶硅膜（1）上的相同位置。激光振荡器（12）辐射比参考周期短的脉冲发生时段的激光束。参考周期是从在膜（1）的表面上的脉冲激光束的照射的辐射定时直到由于激光束照射到基板温度升高的定时的时间间隔原始基板温度。

3. 发明授权

US06933185B2 Polysilicon evaluating method, polysilicon inspection apparatus and method for preparation of thin film transistor 有权
标题翻译：多晶硅评价方法，多晶硅检查装置及薄膜晶体管的制备方法
公开(公告)号：US06933185B2
公开(公告)日：2005-08-23
申请号：US10394223
申请日：2003-03-24
申请人： Hiroyuki Wada , Yoshimi Hirata , Ayumu Taguchi , Koichi Tatsuki , Nobuhiko Umezu , Shigeo Kubota , Tetsuo Abe , Akifumi Ooshima , Tadashi Hattori , Makoto Takatoku , Yukiyasu Sugano
发明人： Hiroyuki Wada , Yoshimi Hirata , Ayumu Taguchi , Koichi Tatsuki , Nobuhiko Umezu , Shigeo Kubota , Tetsuo Abe , Akifumi Ooshima , Tadashi Hattori , Makoto Takatoku , Yukiyasu Sugano
IPC分类号： H01L21/263 , H01L21/66 , C30B28/02 , H01L21/786
CPC分类号： H01L22/12
摘要： The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.
摘要翻译：对通过非晶硅膜的准分子激光退火而形成的多晶硅膜的状态进行评价。当非晶硅膜退火以形成多晶硅膜时，线性或周期性本身就取决于退火期间施加到非晶硅的能量而形成的多晶硅膜的膜表面的空间结构。该线性或周期性被处理为图像并且通过利用线性或周期性从图像数字地表示。基于数值结果检查多晶硅膜的状态。

4. 发明授权

US08518756B2 Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device 失效
标题翻译：薄膜结晶方法，薄膜半导体器件的制造方法，电子设备的制造方法以及显示装置的制造方法
公开(公告)号：US08518756B2
公开(公告)日：2013-08-27
申请号：US13441556
申请日：2012-04-06
申请人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
发明人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
IPC分类号： H01L21/00
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02683 , H01L27/1281 , H01L27/1285
摘要： A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction.
摘要翻译：一种使薄膜结晶的方法在基板上形成的覆盖栅电极的栅极绝缘膜。通过缓冲层在其上形成光吸收层。能量线Lh由诸如半导体激光器的连续波激光器施加到光吸收层。这仅退光到光吸收层Lh的表面侧，并且产生通过使用在光吸收层处的能量线Lh的热转化和退火反应的热而产生的热而使非晶硅膜结晶而获得的结晶硅膜。

5. 发明授权

US06240111B1 Laser beam generating apparatus and method 有权
标题翻译：激光束发生装置及方法
公开(公告)号：US06240111B1
公开(公告)日：2001-05-29
申请号：US09289244
申请日：1999-04-09
申请人： Shigeo Kubota , Nobuhiko Umezu , Tatsuo Fukui , Hisashi Masuda , Koichi Tatsuki
发明人： Shigeo Kubota , Nobuhiko Umezu , Tatsuo Fukui , Hisashi Masuda , Koichi Tatsuki
IPC分类号： H01S310
CPC分类号： G02F1/37
摘要： A laser beam generating apparatus comprising a first laser beam source oscillating in a near infrared-ray region of, for example, an Nd:YAG laser to generate a laser beam, a second higher harmonic wave generator for generating, from the laser beam emitted from the first laser beam source, a second higher harmonic wave having a half wavelength of the laser beam emitted from the first laser beam source, a splitter for splitting the second higher harmonic wave, a second laser beam source which is supplied with a part of the second higher harmonic wave thus split is input to a Ti:Sapphire laser to be excited and oscillated, thereby generating a laser beam of substantially 700 nm in wavelength, a fourth higher harmonic wave generator for generating a fourth higher harmonic wave from the remaining part of the second higher harmonic wave thus split, a sum frequency mixing composed of a BBO crystal device to which the laser beam of substantially 700 nm in wavelength and the fourth higher harmonic wave are input, and a controller for controlling the temperature of the BBO crystal device to substantially 100K or less, thereby generating a laser beam of substantially 193 nm in wavelength as an output of the sum frequency mixing.
摘要翻译：一种激光束产生装置，包括：在例如Nd：YAG激光器的近红外线区域中振荡的第一激光束源，以产生激光束;第二高次谐波发生器，用于从从第一激光束源，具有从第一激光束源发射的激光束的半波长的第二高次谐波，用于分离第二高次谐波的分离器，被提供有第一激光束的一部分的第二激光束源将这样分割的第二高次谐波输入到激发和振荡的Ti：蓝宝石激光器中，从而产生大致为700nm的波长的激光束;第四高次谐波发生器，用于从剩余部分产生第四高次谐波这样分裂的第二高次谐波，由BBO晶体器件组成的和频混频，其中波长大致为700nm的激光束和第四较高谐波尼康波输入，以及用于将BBO晶体装置的温度控制在基本上为100K以下的控制器，由此产生大致193nm的波长的激光束作为和频混合的输出。

6. 发明授权

US08168518B2 Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device 失效
标题翻译：薄膜结晶方法，薄膜半导体器件的制造方法，电子设备的制造方法以及显示装置的制造方法
公开(公告)号：US08168518B2
公开(公告)日：2012-05-01
申请号：US12600595
申请日：2008-04-30
申请人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
发明人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
IPC分类号： H01L21/20
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02683 , H01L27/1281 , H01L27/1285
摘要： A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption layer (19) is formed thereon through a buffer layer (17). Energy lines Lh are applied to the light absorption layer (19) from a continuous-wave laser such as a semiconductor laser. This oxidizes only a surface side of the light absorption layer Lh and produces a beautiful crystalline silicon film (15a) obtained by crystallizing the amorphous silicon film (15) using heat generated by thermal conversion of the energy lines Lh at the light absorption layer (19) and heat of the oxidation reaction. This provides a method for crystallizing a thin film with good controllability at low costs achieved with simpler process.
摘要翻译：在基板（1）上形成栅极绝缘膜（13）以覆盖栅电极（11），并且进一步形成非晶硅膜（半导体薄膜）（15）。通过缓冲层（17）在其上形成光吸收层（19）。能量线Lh由诸如半导体激光器的连续波激光器施加到光吸收层（19）。这仅氧化光吸收层Lh的表面侧，并且产生通过使用在光吸收层（19）处的能量线Lh的热转换产生的热而使非晶硅膜（15）结晶而获得的美丽的晶体硅膜（15a））和氧化反应的热量。这提供了一种以较简单的工艺以低成本使具有良好可控性的薄膜结晶的方法。

7. 发明申请

US20100159619A1 METHOD FOR CRYSTALLIZING THIN FILM, METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING DISPLAY DEVICE 失效
标题翻译：用于晶片结晶的方法，制造薄膜半导体器件的方法，制造电子设备的方法和制造显示器件的方法
公开(公告)号：US20100159619A1
公开(公告)日：2010-06-24
申请号：US12600595
申请日：2008-04-30
申请人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
发明人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
IPC分类号： H01L33/00 , H01L21/20 , H01L21/336 , H01L21/30
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02683 , H01L27/1281 , H01L27/1285
摘要： A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption layer (19) is formed thereon through a buffer layer (17). Energy lines Lh are applied to the light absorption layer (19) from a continuous-wave laser such as a semiconductor laser. This oxidizes only a surface side of the light absorption layer Lh and produces a beautiful crystalline silicon film (15a) obtained by crystallizing the amorphous silicon film (15) using heat generated by thermal conversion of the energy lines Lh at the light absorption layer (19) and heat of the oxidation reaction. This provides a method for crystallizing a thin film with good controllability at low costs achieved with simpler process.
摘要翻译：在基板（1）上形成栅极绝缘膜（13）以覆盖栅电极（11），并且进一步形成非晶硅膜（半导体薄膜）（15）。通过缓冲层（17）在其上形成光吸收层（19）。能量线Lh由诸如半导体激光器的连续波激光器施加到光吸收层（19）。这仅氧化光吸收层Lh的表面侧，并且产生通过使用在光吸收层（19）处的能量线Lh的热转换产生的热而使非晶硅膜（15）结晶而获得的美丽的晶体硅膜（15a））和氧化反应的热量。这提供了一种以较简单的工艺以低成本使具有良好可控性的薄膜结晶的方法。

8. 发明授权

US06798498B2 Apparatus for evaluating polysilicon film 失效
标题翻译：多晶硅膜评估装置
公开(公告)号：US06798498B2
公开(公告)日：2004-09-28
申请号：US10050542
申请日：2002-01-18
申请人： Hiroyuki Wada , Koichi Tatsuki , Nobuhiko Umezu , Eiji Isomura , Tetsuo Abe , Tadashi Hattori , Akifumi Ooshima , Makoto Uragaki , Yoshiyuki Noguchi , Hiroyuki Tamaki , Masataka Ebe , Tomohiro Ishiguro , Yasuyuki Kato
发明人： Hiroyuki Wada , Koichi Tatsuki , Nobuhiko Umezu , Eiji Isomura , Tetsuo Abe , Tadashi Hattori , Akifumi Ooshima , Makoto Uragaki , Yoshiyuki Noguchi , Hiroyuki Tamaki , Masataka Ebe , Tomohiro Ishiguro , Yasuyuki Kato
IPC分类号： G01N2100
CPC分类号： G01N21/956
摘要： A polysilicon film evaluation apparatus is provided which enables objective automatic evaluation of the status of a polysilicon film, as formed to a high accuracy in a contact-free fashion. To this end, there is provided a polysilicon film evaluation apparatus 1 including a stage 25 on which to set a substrate W carrying a polysilicon film, an optical system for observation with the visible light 4, 8, 12, 40a for illuminating the visible light on a substrate W on the stage to photograph a surface image of the polysilicon film on the substrate W to effect auto-focusing, an optical system for observation with UV light 6, 10, 40b for illuminating the UV light on the substrate on the stage to acquire a surface image of the polysilicon film of the substrate, auto-focused using the optical system for observation with the visible light, and an evaluating unit 51 for evaluating the linearity and periodicity of a spatial structure of the film surface of the polysilicon film, from a surface image of the polysilicon film obtained by the optical system for observation with UV light, to evaluate the status of the polysilicon film based on the results of evaluation of the linearity and periodicity.
摘要翻译：提供了一种多晶硅膜评价装置，其能够以无接触的方式高精度地形成，从而能够客观地自动评估多晶硅膜的状态。为此，提供了一种多晶硅膜评价装置1，其包括载置多晶硅膜的基板W，载置多晶硅膜的基板W的阶段25，用于照射可见光的可见光4,8,12,4a的观察用光学系统在台面上的基板W上拍摄基板W上的多晶硅膜的表面图像以实现自动聚焦，用于用紫外光6,10,40b观察的光学系统用于照射台上的基板上的UV光获取使用可见光观察用光学系统自动聚焦的基板的多晶硅膜的表面像，以及用于评价多晶硅膜的膜表面的空间结构的线性和周期性的评估单元51 从由用于用UV光观察的光学系统获得的多晶硅膜的表面图像，基于线性度的评估结果来评估多晶硅膜的状态a 周期性

9. 发明授权

US07820531B2 Method of manufacturing semiconductor device, method of manufacturing display apparatus, apparatus of manufacturing semiconductor device, and display apparatus 失效
标题翻译：制造半导体器件的方法，制造显示装置的方法，制造半导体器件的装置和显示装置
公开(公告)号：US07820531B2
公开(公告)日：2010-10-26
申请号：US12247370
申请日：2008-10-08
申请人： Goh Matsunobu , Koichi Tatsuki , Yoshio Inagaki , Nobuhiko Umezu , Koichi Tsukihara
发明人： Goh Matsunobu , Koichi Tatsuki , Yoshio Inagaki , Nobuhiko Umezu , Koichi Tsukihara
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： B23K26/032 , B23K26/0006 , B23K2103/172 , B23K2103/54 , B23K2103/56 , H01L21/02691 , H01L27/1285 , H01L27/3244 , H01L51/0005 , H01L2251/5315
摘要： A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam and the substrate are moved relative to each other in a first direction and a second direction which is opposite to the first direction, a change in an optical characteristic between an area irradiated with the laser beam and an area which is not irradiated with the laser beam in the substrate or an optical characteristic of the irradiated area is measured in each of the first and second directions, and irradiation power of the laser beam is modulated so that the difference between a measurement result in the first direction and a measurement result in the second direction lies in a predetermined range.
摘要翻译：一种制造半导体器件的方法包括以下步骤：通过施加激光束来修改半导体膜; 以及在所述改性半导体膜上形成半导体器件。在修改半导体膜的步骤中，激光束和衬底在与第一方向相反的第一方向和第二方向上相对于彼此移动，激光照射的区域之间的光学特性的变化在第一和第二方向中的每一个中测量光束和在基板中不被激光束照射的区域或照射区域的光学特性，并且调制激光束的照射功率，使得测量导致第一方向，并且在第二方向上的测量结果位于预定范围内。

10. 发明授权

US5862163A Apparatus for generating ultraviolet laser radiation 失效
标题翻译：用于产生紫外线激光辐射的装置
公开(公告)号：US5862163A
公开(公告)日：1999-01-19
申请号：US847759
申请日：1997-04-23
申请人： Nobuhiko Umezu , Hiroyuki Wada , Koichi Tatsuki
发明人： Nobuhiko Umezu , Hiroyuki Wada , Koichi Tatsuki
IPC分类号： G02F1/37 , G02F1/35 , H01S3/109 , H01S3/10
CPC分类号： G02F1/3501 , G02F1/37 , G02F2001/3505
摘要： An apparatus for generating ultraviolet laser radiation according to the present invention includes a laser light source and a frequency conversion device made of a nonlinear optical crystal on which laser light irradiated from the laser light source is made incident and which converts a frequency of the incident laser light to thereby irradiate the ultraviolet radiation. A protective film which prevents oxygen and water content from permeating thereinto is deposited on at least an output end surface, from which ultraviolet radiation is irradiated, of the nonlinear optical crystal. Therefore, it is possible to prevent characteristics of the frequency conversion device from being lowered due to change of a property thereof resulting from increased output power of laser light and to increase a lifetime thereof.
摘要翻译：根据本发明的用于产生紫外激光辐射的装置包括激光源和由激光光源照射的激光入射并且将入射激光器的频率转换的非线性光学晶体的变频装置从而照射紫外线。防止氧和水分渗透到其中的保护膜沉积在非线性光学晶体的至少一个紫外线照射的输出端表面上。因此，可以防止由于激光的输出功率的增加而导致的变频特性而降低频率转换装置的特性并增加其寿命。

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