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1. 发明授权

US08518756B2 Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device 失效
标题翻译：薄膜结晶方法，薄膜半导体器件的制造方法，电子设备的制造方法以及显示装置的制造方法
公开(公告)号：US08518756B2
公开(公告)日：2013-08-27
申请号：US13441556
申请日：2012-04-06
申请人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
发明人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
IPC分类号： H01L21/00
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02683 , H01L27/1281 , H01L27/1285
摘要： A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction.
摘要翻译：一种使薄膜结晶的方法在基板上形成的覆盖栅电极的栅极绝缘膜。通过缓冲层在其上形成光吸收层。能量线Lh由诸如半导体激光器的连续波激光器施加到光吸收层。这仅退光到光吸收层Lh的表面侧，并且产生通过使用在光吸收层处的能量线Lh的热转化和退火反应的热而产生的热而使非晶硅膜结晶而获得的结晶硅膜。

2. 发明申请

US20100159619A1 METHOD FOR CRYSTALLIZING THIN FILM, METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING DISPLAY DEVICE 失效
标题翻译：用于晶片结晶的方法，制造薄膜半导体器件的方法，制造电子设备的方法和制造显示器件的方法
公开(公告)号：US20100159619A1
公开(公告)日：2010-06-24
申请号：US12600595
申请日：2008-04-30
申请人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
发明人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
IPC分类号： H01L33/00 , H01L21/20 , H01L21/336 , H01L21/30
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02683 , H01L27/1281 , H01L27/1285
摘要： A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption layer (19) is formed thereon through a buffer layer (17). Energy lines Lh are applied to the light absorption layer (19) from a continuous-wave laser such as a semiconductor laser. This oxidizes only a surface side of the light absorption layer Lh and produces a beautiful crystalline silicon film (15a) obtained by crystallizing the amorphous silicon film (15) using heat generated by thermal conversion of the energy lines Lh at the light absorption layer (19) and heat of the oxidation reaction. This provides a method for crystallizing a thin film with good controllability at low costs achieved with simpler process.
摘要翻译：在基板（1）上形成栅极绝缘膜（13）以覆盖栅电极（11），并且进一步形成非晶硅膜（半导体薄膜）（15）。通过缓冲层（17）在其上形成光吸收层（19）。能量线Lh由诸如半导体激光器的连续波激光器施加到光吸收层（19）。这仅氧化光吸收层Lh的表面侧，并且产生通过使用在光吸收层（19）处的能量线Lh的热转换产生的热而使非晶硅膜（15）结晶而获得的美丽的晶体硅膜（15a））和氧化反应的热量。这提供了一种以较简单的工艺以低成本使具有良好可控性的薄膜结晶的方法。

3. 发明申请

US20090095962A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING DISPLAY APPARATUS, APPARATUS OF MANUFACTURING SEMICONDUCTOR DEVICE, AND DISPLAY APPARATUS 失效
标题翻译：制造半导体器件的方法，制造显示装置的方法，制造半导体器件的装置和显示装置
公开(公告)号：US20090095962A1
公开(公告)日：2009-04-16
申请号：US12247370
申请日：2008-10-08
申请人： Goh Matsunobu , Koichi Tatsuki , Yoshio Inagaki , Nobuhiko Umezu , Koichi Tsukihara
发明人： Goh Matsunobu , Koichi Tatsuki , Yoshio Inagaki , Nobuhiko Umezu , Koichi Tsukihara
IPC分类号： H01L33/00 , H01L21/00 , A61N5/00
CPC分类号： B23K26/032 , B23K26/0006 , B23K2103/172 , B23K2103/54 , B23K2103/56 , H01L21/02691 , H01L27/1285 , H01L27/3244 , H01L51/0005 , H01L2251/5315
摘要： A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam and the substrate are moved relative to each other in a first direction and a second direction which is opposite to the first direction, a change in an optical characteristic between an area irradiated with the laser beam and an area which is not irradiated with the laser beam in the substrate or an optical characteristic of the irradiated area is measured in each of the first and second directions, and irradiation power of the laser beam is modulated so that the difference between a measurement result in the first direction and a measurement result in the second direction lies in a predetermined range.
摘要翻译：一种制造半导体器件的方法包括以下步骤：通过施加激光束来修改半导体膜; 以及在所述改性半导体膜上形成半导体器件。在修改半导体膜的步骤中，激光束和衬底在与第一方向相反的第一方向和第二方向上相对于彼此移动，激光照射的区域之间的光学特性的变化在第一和第二方向中的每一个中测量光束和在基板中不被激光束照射的区域或照射区域的光学特性，并且调制激光束的照射功率，使得测量导致第一方向，并且在第二方向上的测量结果位于预定范围内。

4. 发明授权

US08168518B2 Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device 失效
标题翻译：薄膜结晶方法，薄膜半导体器件的制造方法，电子设备的制造方法以及显示装置的制造方法
公开(公告)号：US08168518B2
公开(公告)日：2012-05-01
申请号：US12600595
申请日：2008-04-30
申请人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
发明人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
IPC分类号： H01L21/20
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02683 , H01L27/1281 , H01L27/1285
摘要： A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption layer (19) is formed thereon through a buffer layer (17). Energy lines Lh are applied to the light absorption layer (19) from a continuous-wave laser such as a semiconductor laser. This oxidizes only a surface side of the light absorption layer Lh and produces a beautiful crystalline silicon film (15a) obtained by crystallizing the amorphous silicon film (15) using heat generated by thermal conversion of the energy lines Lh at the light absorption layer (19) and heat of the oxidation reaction. This provides a method for crystallizing a thin film with good controllability at low costs achieved with simpler process.
摘要翻译：在基板（1）上形成栅极绝缘膜（13）以覆盖栅电极（11），并且进一步形成非晶硅膜（半导体薄膜）（15）。通过缓冲层（17）在其上形成光吸收层（19）。能量线Lh由诸如半导体激光器的连续波激光器施加到光吸收层（19）。这仅氧化光吸收层Lh的表面侧，并且产生通过使用在光吸收层（19）处的能量线Lh的热转换产生的热而使非晶硅膜（15）结晶而获得的美丽的晶体硅膜（15a））和氧化反应的热量。这提供了一种以较简单的工艺以低成本使具有良好可控性的薄膜结晶的方法。

5. 发明授权

US07820531B2 Method of manufacturing semiconductor device, method of manufacturing display apparatus, apparatus of manufacturing semiconductor device, and display apparatus 失效
标题翻译：制造半导体器件的方法，制造显示装置的方法，制造半导体器件的装置和显示装置
公开(公告)号：US07820531B2
公开(公告)日：2010-10-26
申请号：US12247370
申请日：2008-10-08
申请人： Goh Matsunobu , Koichi Tatsuki , Yoshio Inagaki , Nobuhiko Umezu , Koichi Tsukihara
发明人： Goh Matsunobu , Koichi Tatsuki , Yoshio Inagaki , Nobuhiko Umezu , Koichi Tsukihara
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： B23K26/032 , B23K26/0006 , B23K2103/172 , B23K2103/54 , B23K2103/56 , H01L21/02691 , H01L27/1285 , H01L27/3244 , H01L51/0005 , H01L2251/5315
摘要： A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam and the substrate are moved relative to each other in a first direction and a second direction which is opposite to the first direction, a change in an optical characteristic between an area irradiated with the laser beam and an area which is not irradiated with the laser beam in the substrate or an optical characteristic of the irradiated area is measured in each of the first and second directions, and irradiation power of the laser beam is modulated so that the difference between a measurement result in the first direction and a measurement result in the second direction lies in a predetermined range.
摘要翻译：一种制造半导体器件的方法包括以下步骤：通过施加激光束来修改半导体膜; 以及在所述改性半导体膜上形成半导体器件。在修改半导体膜的步骤中，激光束和衬底在与第一方向相反的第一方向和第二方向上相对于彼此移动，激光照射的区域之间的光学特性的变化在第一和第二方向中的每一个中测量光束和在基板中不被激光束照射的区域或照射区域的光学特性，并且调制激光束的照射功率，使得测量导致第一方向，并且在第二方向上的测量结果位于预定范围内。

6. 发明申请

US20120140055A1 MICROSCOPE, REGION DETERMINING METHOD, AND PROGRAM 审中-公开
标题翻译： MICROSCOPE，区域确定方法和程序
公开(公告)号：US20120140055A1
公开(公告)日：2012-06-07
申请号：US13305946
申请日：2011-11-29
申请人： Ryu Narusawa , Goh Matsunobu
发明人： Ryu Narusawa , Goh Matsunobu
IPC分类号： H04N7/18
CPC分类号： G02B21/10 , G02B21/365 , G06K9/00134 , G06T7/12 , G06T7/174 , G06T2207/10056 , G06T2207/30004
摘要： A microscope includes a dark-field illumination system that irradiates dark-field illumination light to a preparation in which a specimen is encapsulated between slide glass and cover glass by using an encapsulant, and an imaging unit that takes a dark-field image of the preparation irradiated with the dark-field illumination light. The microscope further includes a region determiner that detects the boundary between the encapsulant and air included between the slide glass and the cover glass based on the taken dark-field image and determines a region other than a region of the air as a region of interest for the specimen.
摘要翻译：显微镜包括暗场照明系统，其通过使用密封剂将暗视野照明光照射到载玻片和玻璃罩之间的样品被封装的制品中;以及成像单元，其采取制备的暗视野图像用暗场照明光照射。显微镜还包括区域确定器，其基于所获取的暗视野图像检测包封物和载玻片之间包含的空气之间的边界，并且确定作为感兴趣区域的空气区域以外的区域标本。

7. 发明申请

US20120002034A1 MICROSCOPE AND AREA DETERMINATION METHOD 有权
标题翻译：微观和区域确定方法
公开(公告)号：US20120002034A1
公开(公告)日：2012-01-05
申请号：US13169277
申请日：2011-06-27
申请人： Goh Matsunobu , Takamichi Yamakoshi
发明人： Goh Matsunobu , Takamichi Yamakoshi
IPC分类号： H04N7/18
CPC分类号： G02B21/125 , G02B21/26 , G02B21/365 , G06K9/00127 , G06K9/3216 , G06K2009/3225
摘要： Provided is a microscope including: dark field illumination and bright field illumination which illuminate a preparat where a sample mounted on a slide glass is covered with a cover glass and a mounting agent; an image capturing unit which acquires a dark field image by image-capturing the preparat illuminated by the dark field illumination and which acquires a bright field image by image-capturing the preparat illuminated by the bright field illumination; and a magnified portion image acquisition area determination unit which detects an edge of the cover glass in the preparat based on the dark field image and the bright field image acquired by the image capturing unit and determines an internal area of the detected edge of the cover glass as a magnified portion image acquisition area of the sample.
摘要翻译：提供一种显微镜，包括：暗场照明和亮场照明，其照亮安装在载玻片上的样品被盖玻璃和安装剂覆盖的准备物; 图像拍摄单元，其通过图像捕获由暗场照明照明的准备物获取暗场图像，并且通过对通过亮场照明照明的准备物进行图像捕获来获取亮场图像; 以及放大部分图像获取区域确定单元，其基于暗场图像和由图像捕获单元获取的亮视场图像来检测准备区中的盖玻片的边缘，并且确定盖玻片的检测到的边缘的内部区域作为样本的放大部分图像获取区域。

8. 发明授权

US08942417B2 Method for detection of specimen region, apparatus for detection of specimen region, and program for detection of specimen region 有权
标题翻译：检测样本区域的方法，检测样本区域的装置以及检测区域的程序
公开(公告)号：US08942417B2
公开(公告)日：2015-01-27
申请号：US13303279
申请日：2011-11-23
申请人： Koichiro Kishima , Ryu Narusawa , Goh Matsunobu
发明人： Koichiro Kishima , Ryu Narusawa , Goh Matsunobu
IPC分类号： G06K9/00 , G02B21/36 , G02B21/16 , G06T7/00
CPC分类号： G02B21/365 , G02B21/16 , G06T7/11 , G06T7/174 , G06T2207/10056 , G06T2207/20221 , G06T2207/30024
摘要： A method for detecting the specimen region includes the first step for the first region detecting unit to detect the first region which is a region with contrast in the first image of an object for observation which is photographed under illumination with visible light, the second step for the second region detecting unit to detect the second region which is a region with contrast in the second image of the object for observation which is photographed under illumination with ultraviolet light, and the third step for the specimen region defining unit to define, based on the first and second regions mentioned above, the specimen region where there exists the specimen in the object for observation.
摘要翻译：用于检测样本区域的方法包括：第一区域检测单元检测第一区域的第一步骤，第一区域是在可见光照射下拍摄的观察对象的第一图像中的对比区域，第二步骤第二区域检测单元，用于检测在用紫外光照射下拍摄的用于观察的对象的第二图像中具有对比度的区域的第二区域，以及用于样本区域定义单元的第三步骤，基于第一和第二区域，在观察对象物中存在标本的样本区域。

9. 发明授权

US09013570B2 Microscope and area determination method 有权
标题翻译：显微镜和面积测定方法
公开(公告)号：US09013570B2
公开(公告)日：2015-04-21
申请号：US13169277
申请日：2011-06-27
申请人： Goh Matsunobu , Takamichi Yamakoshi
发明人： Goh Matsunobu , Takamichi Yamakoshi
IPC分类号： G02B21/26 , G06K9/32 , G02B21/12 , G02B21/36 , G06K9/00
CPC分类号： G02B21/125 , G02B21/26 , G02B21/365 , G06K9/00127 , G06K9/3216 , G06K2009/3225
摘要： Provided is a microscope including: dark field illumination and bright field illumination which illuminate a preparat where a sample mounted on a slide glass is covered with a cover glass and a mounting agent; an image capturing unit which acquires a dark field image by image-capturing the preparat illuminated by the dark field illumination and which acquires a bright field image by image-capturing the preparat illuminated by the bright field illumination; and a magnified portion image acquisition area determination unit which detects an edge of the cover glass in the preparat based on the dark field image and the bright field image acquired by the image capturing unit and determines an internal area of the detected edge of the cover glass as a magnified portion image acquisition area of the sample.
摘要翻译：提供一种显微镜，包括：暗场照明和亮场照明，其照亮安装在载玻片上的样品被盖玻璃和安装剂覆盖的准备物; 图像拍摄单元，其通过图像捕获由暗场照明照明的准备物获取暗场图像，并且通过对通过亮场照明照明的准备物进行图像捕获来获取亮场图像; 以及放大部分图像获取区域确定单元，其基于暗场图像和由图像捕获单元获取的亮视场图像来检测准备区中的盖玻片的边缘，并且确定盖玻片的检测到的边缘的内部区域作为样本的放大部分图像获取区域。

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