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1. 发明申请

US20110294281A1 METHOD OF AT LEAST PARTIALLY RELEASING AN EPITAXIAL LAYER 有权
标题翻译：至少部分释放外延层的方法
公开(公告)号：US20110294281A1
公开(公告)日：2011-12-01
申请号：US13130173
申请日：2009-11-19
申请人： Keyan Zang , Jinghua Teng , Soo Jin Chua
发明人： Keyan Zang , Jinghua Teng , Soo Jin Chua
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02521 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/02664 , H01L33/007 , H01L33/0079 , H01L33/20 , Y10S977/742
摘要： A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.
摘要翻译：从衬底至少部分地释放材料的外延层的方法。该方法包括以下步骤：在衬底上形成图案化的牺牲层，使得衬底被部分地暴露并被牺牲层部分地覆盖; 通过纳米外延横向过度生长在图案化的牺牲层上生长外延层，使得外延层形成在包括图案化的牺牲层和所述材料的中间层的上方; 并且选择性地蚀刻图案化的牺牲层，使得外延层至少部分地从衬底上释放出来。

2. 发明授权

US08859399B2 Method of at least partially releasing an epitaxial layer 有权
标题翻译：至少部分地释放外延层的方法
公开(公告)号：US08859399B2
公开(公告)日：2014-10-14
申请号：US13130173
申请日：2009-11-19
申请人： Keyan Zang , Jinghua Teng , Soo Jin Chua
发明人： Keyan Zang , Jinghua Teng , Soo Jin Chua
IPC分类号： H01L21/02 , H01L33/00 , H01L33/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02521 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/02664 , H01L33/007 , H01L33/0079 , H01L33/20 , Y10S977/742
摘要： A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.
摘要翻译：从衬底至少部分地释放材料的外延层的方法。该方法包括以下步骤：在衬底上形成图案化的牺牲层，使得衬底被部分地暴露并被牺牲层部分地覆盖; 通过纳米外延横向过度生长在图案化的牺牲层上生长外延层，使得外延层形成在包括图案化的牺牲层和所述材料的中间层的上方; 并且选择性地蚀刻图案化的牺牲层，使得外延层至少部分地从衬底上释放出来。

3. 发明申请

US20120142170A1 METHOD OF FORMING PHOTONIC CRYSTALS 审中-公开
标题翻译：形成光子晶体的方法
公开(公告)号：US20120142170A1
公开(公告)日：2012-06-07
申请号：US13377521
申请日：2010-06-09
申请人： Jinghua Teng , Eo Lim , Soo Jin Chua , Soo Seng Nirman Ang
发明人： Jinghua Teng , Eo Lim , Soo Jin Chua , Soo Seng Nirman Ang
IPC分类号： H01L21/20
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/136 , G02B2006/12176
摘要： According to an embodiment of the present invention, a method of forming photonic crystals is provided. The method includes: forming a layer arrangement on a support substrate. The layer arrangement includes a first partial layer arrangement and a second partial layer arrangement, wherein the second partial layer arrangement is disposed over the first partial layer arrangement, wherein each partial layer arrangement comprises a first layer and a second layer, wherein the second layer is disposed over the first layer, and wherein the material of the second layer has a different etching characteristic than the material of the first layer. The method further includes removing at least one portion of the second layer and removing the first layer, wherein forming the layer arrangement occurs prior to removing the at least one portion of the second layer and the first layer.
摘要翻译：根据本发明的实施例，提供了形成光子晶体的方法。该方法包括：在支撑衬底上形成层布置。层布置包括第一部分层布置和第二部分层布置，其中第二部分层布置设置在第一部分层布置之上，其中每个部分层布置包括第一层和第二层，其中第二层是设置在所述第一层上，并且其中所述第二层的材料具有与所述第一层的材料不同的蚀刻特性。该方法还包括去除第二层的至少一部分并去除第一层，其中形成层布置发生在去除第二层和第一层的至少一部分之前。

4. 发明申请

US20120112218A1 Light Emitting Diode with Polarized Light Emission 审中-公开
标题翻译：具有偏振光发射的发光二极管
公开(公告)号：US20120112218A1
公开(公告)日：2012-05-10
申请号：US12939322
申请日：2010-11-04
申请人： Jinghua Teng , Soo-Jin Chua , Liang Zhang , Liyuan Deng
发明人： Jinghua Teng , Soo-Jin Chua , Liang Zhang , Liyuan Deng
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , H01L33/46 , H01L33/508 , H01L2933/0091
摘要： An apparatus for emitting polarized light and a method for fabricating such apparatus are provided. The apparatus includes a surface emission light emitting diode (LED), a first electrode, and a sub-wavelength metal grating (SWMG). The surface emission LED includes a first contact surface and a second contact surface. The first electrode is coupled to the first contact surface. The SWMG is formed on a surface of the surface emission LED.
摘要翻译：提供了一种用于发射偏振光的装置及其制造方法。该装置包括表面发射发光二极管（LED），第一电极和亚波长金属光栅（SWMG）。表面发射LED包括第一接触表面和第二接触表面。第一电极耦合到第一接触表面。 SWMG形成在表面发射LED的表面上。

5. 发明申请

US20110114970A1 LIGHT EMITTING DIODE STRUCTURE, A LAMP DEVICE AND A METHOD OF FORMING A LIGHT EMITTING DIODE STRUCTURE 审中-公开
标题翻译：发光二极管结构，灯装置和形成发光二极管结构的方法
公开(公告)号：US20110114970A1
公开(公告)日：2011-05-19
申请号：US12934710
申请日：2008-04-23
申请人： Jinghua Teng , Soo Seng Norman Ang , Soo Jin Chua
发明人： Jinghua Teng , Soo Seng Norman Ang , Soo Jin Chua
IPC分类号： H01L33/08 , H01L33/60 , H01L33/44
CPC分类号： H01L33/46 , G02F1/133603 , H01L25/0756 , H01L33/405 , H01L33/64 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode structure, a lamp device and a method of forming a light emitting diode structure are provided. The structure has a substrate coated with a first reflective material; an electrode coated with a second reflective material, one or more layers of light emitting material, the layers disposed between the substrate and electrode; wherein in use, the first reflective material and second reflective material reflects light out of the structure via at least one light emitting surface and in a direction away from the electrode.
摘要翻译：提供了发光二极管结构，灯装置和形成发光二极管结构的方法。该结构具有涂覆有第一反射材料的基底; 涂覆有第二反射材料的电极，一层或多层发光材料，所述层设置在所述基底和电极之间; 其中在使用中，所述第一反射材料和所述第二反射材料经由至少一个发光表面并且远离所述电极的方向将光反射出所述结构。

6. 发明授权

US07598104B2 Method of forming a metal contact and passivation of a semiconductor feature 有权
标题翻译：形成金属接触的方法和半导体特征的钝化
公开(公告)号：US07598104B2
公开(公告)日：2009-10-06
申请号：US11939227
申请日：2007-11-13
申请人： Jinghua Teng , Ee Leong Lim , Soo Jin Chua
发明人： Jinghua Teng , Ee Leong Lim , Soo Jin Chua
IPC分类号： H01L21/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/385 , H01S5/0282 , H01S5/22
摘要： A method of forming a metal contact and passivation of a semiconductor feature, and devices made using the method. The method comprises the steps of forming a dielectric mask on a semiconductor substrate utilising photolithography processes; etching the semiconductor substrate such that one or more features are formed underneath respective portions of the dielectric mask; depositing a passivation layer on the substrate with the dielectric mask in place above the features; subjecting the substrate to an etchant such that the dielectric mask is etched at a higher rate than the passivation layer, whereby portions of the passivation layer deposited on the dielectric mask are lifted off from the substrate; and depositing a metal layer on the substrate including over the remaining passivation layer and exposed portions of the features.
摘要翻译：一种形成半导体特征的金属接触和钝化的方法，以及使用该方法制造的器件。该方法包括以下步骤：利用光刻工艺在半导体衬底上形成介电掩模; 蚀刻半导体衬底，使得一个或多个特征形成在介电掩模的各个部分下方; 在衬底上沉积钝化层，其中介电掩模位于特征上方; 使衬底经受蚀刻剂，使得以比钝化层更高的速率蚀刻介电掩模，由此沉积在介电掩模上的钝化层的一部分从衬底上提出; 以及在所述衬底上沉积金属层，所述金属层包括在剩余的钝化层上并且所述特征的暴露部分。

7. 发明申请

US20130292586A1 THz PHOTOMIXER EMITTER AND METHOD 有权
标题翻译：太赫兹光电发生器和方法
公开(公告)号：US20130292586A1
公开(公告)日：2013-11-07
申请号：US13881921
申请日：2011-10-28
申请人： Jinghua Teng , Hendrix Tanoto , Qing Yang Wu
发明人： Jinghua Teng , Hendrix Tanoto , Qing Yang Wu
IPC分类号： H01Q1/00
CPC分类号： H01Q1/00 , H01Q9/16 , H01Q9/27
摘要： A THz photomixer emitter is disclosed. The emitter comprises a photoconductive material, an antenna structure, and an electrode array. The electrode array is disposed such that an electric field associated with photocarriers generated in the photoconductive material is coupled to the antenna for emission of a THz wave via the antenna structure. The electrode array is configured such that an electric field resonance pattern of the electrode array is substantially aligned with an emission field pattern of the antenna structure.
摘要翻译：公开了一种太赫兹光混合器发射器。发射器包括光电导材料，天线结构和电极阵列。电极阵列被布置成使得与在光电导材料中产生的光载流子相关联的电场耦合到天线，用于通过天线结构发射太赫兹波。电极阵列被配置为使得电极阵列的电场共振图案基本上与天线结构的发射场模式对准。

8. 发明授权

US09935355B2 THz photomixer emitter and method 有权
公开(公告)号：US09935355B2
公开(公告)日：2018-04-03
申请号：US13881921
申请日：2011-10-28
申请人： Jinghua Teng , Hendrix Tanoto , Qing Yang Steve Wu
发明人： Jinghua Teng , Hendrix Tanoto , Qing Yang Steve Wu
IPC分类号： H01Q1/00 , H01Q9/16 , H01Q9/27
CPC分类号： H01Q1/00 , H01Q9/16 , H01Q9/27
摘要： A THz photomixer emitter is disclosed. The emitter comprises a photoconductive material, an antenna structure, and an electrode array. The electrode array is disposed such that an electric field associated with photocarriers generated in the photoconductive material is coupled to the antenna for emission of a THz wave via the antenna structure. The electrode array is configured such that an electric field resonance pattern of the electrode array is substantially aligned with an emission field pattern of the antenna structure.

9. 发明申请

US20130208254A1 NANO-PHOTOLITHOGRAPHIC SUPERLENS DEVICE AND METHOD FOR FABRICATING SAME 审中-公开
标题翻译：纳米平版印刷设备及其制造方法
公开(公告)号：US20130208254A1
公开(公告)日：2013-08-15
申请号：US13588058
申请日：2012-08-17
申请人： Hong Liu , Jinghua Teng , Lin Ke , Bing Wang
发明人： Hong Liu , Jinghua Teng , Lin Ke , Bing Wang
IPC分类号： G03F7/20
CPC分类号： G03F7/2014 , G03F7/09
摘要： A system for nano-photolithography, a superlens device, and a method for fabricating the superlens device. A system for three-dimensional nano-photolithography includes a light source having a predetermined light wavelength, a device to be patterned, a photoresist layer of photoresponsive material photoresponsive to the predetermined light wavelength formed on the device, and a superlens device in contact with the photoresist layer. The superlens device includes a superlens layer in contact with the photoresist layer, a light permissive mask layer transparent to the predetermined light wavelength and having a layer of nanopatterned opaque features formed thereon, and an intermediate layer separating the superlens layer and the light permissive mask layer by a predetermined distance. The light source is located to radiate light at the predetermined light wavelength on the light permissive mask layer. The layer of nanopatterned opaque features includes a layer of opaque features with varying height dimensions.
摘要翻译：一种用于纳米光刻的系统，一种超薄设备，以及一种用于制造超薄设备的方法。一种用于三维纳米光刻的系统包括具有预定光波长的光源，待图案化的装置，对在该装置上形成的预定光波长的光响应材料的光致抗蚀剂层以及与该装置接触的超薄装置光致抗蚀剂层。该超级透镜装置包括与光致抗蚀剂层接触的超薄层，对预定的光波长透明的光允许掩模层，并且具有形成在其上的纳米图案的不透明特征层，以及分离超薄层和光允许掩模层的中间层预定距离。光源被定位成在光允许掩模层上辐射预定光波长的光。纳米图案不透明特征层包括具有不同高度尺寸的不透明特征层。

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