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    • 1. 发明申请
    • NANO-PHOTOLITHOGRAPHIC SUPERLENS DEVICE AND METHOD FOR FABRICATING SAME
    • 纳米平版印刷设备及其制造方法
    • US20130208254A1
    • 2013-08-15
    • US13588058
    • 2012-08-17
    • Hong LiuJinghua TengLin KeBing Wang
    • Hong LiuJinghua TengLin KeBing Wang
    • G03F7/20
    • G03F7/2014G03F7/09
    • A system for nano-photolithography, a superlens device, and a method for fabricating the superlens device. A system for three-dimensional nano-photolithography includes a light source having a predetermined light wavelength, a device to be patterned, a photoresist layer of photoresponsive material photoresponsive to the predetermined light wavelength formed on the device, and a superlens device in contact with the photoresist layer. The superlens device includes a superlens layer in contact with the photoresist layer, a light permissive mask layer transparent to the predetermined light wavelength and having a layer of nanopatterned opaque features formed thereon, and an intermediate layer separating the superlens layer and the light permissive mask layer by a predetermined distance. The light source is located to radiate light at the predetermined light wavelength on the light permissive mask layer. The layer of nanopatterned opaque features includes a layer of opaque features with varying height dimensions.
    • 一种用于纳米光刻的系统,一种超薄设备,以及一种用于制造超薄设备的方法。 一种用于三维纳米光刻的系统包括具有预定光波长的光源,待图案化的装置,对在该装置上形成的预定光波长的光响应材料的光致抗蚀剂层以及与该装置接触的超薄装置 光致抗蚀剂层。 该超级透镜装置包括与光致抗蚀剂层接触的超薄层,对预定的光波长透明的光允许掩模层,并且具有形成在其上的纳米图案的不透明特征层,以及分离超薄层和光允许掩模层的中间层 预定距离。 光源被定位成在光允许掩模层上辐射预定光波长的光。 纳米图案不透明特征层包括具有不同高度尺寸的不透明特征层。