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1. 发明授权

US07297632B2 Scratch reduction for chemical mechanical polishing 有权
标题翻译：化学机械抛光刮刮
公开(公告)号：US07297632B2
公开(公告)日：2007-11-20
申请号：US11082517
申请日：2005-03-17
申请人： Chuang-Ping Hou , Syun-Ming Jang , Ying-Ho Chen , Chu-Yun Fu , Tung-Ching Tseng
发明人： Chuang-Ping Hou , Syun-Ming Jang , Ying-Ho Chen , Chu-Yun Fu , Tung-Ching Tseng
IPC分类号： H01L21/311
CPC分类号： H01L21/31053
摘要： A method for forming a semiconductor device utilizing a chemical-mechanical polishing (CMP) process is provided. In one example, the method includes sequentially performing a first CMP process for removing a first portion of an oxide surface of a semiconductor device using a high selectivity slurry (HSS) and a first polish pad, interrupting the first CMP process, cleaning the semiconductor device and the first polish pad, and performing a second CMP process for removing a second portion of the oxide surface.
摘要翻译：提供了一种利用化学机械抛光（CMP）工艺形成半导体器件的方法。在一个示例中，该方法包括依次执行第一CMP处理，以使用高选择性浆料（HSS）和第一抛光垫去除半导体器件的氧化物表面的第一部分，中断第一CMP工艺，清洁半导体器件和第一抛光垫，并且执行用于去除氧化物表面的第二部分的第二CMP工艺。

2. 发明授权

US06924238B2 Edge peeling improvement of low-k dielectric materials stack by adjusting EBR resistance 有权
标题翻译：通过调整EBR电阻来降低低k电介质材料的边缘剥离
公开(公告)号：US06924238B2
公开(公告)日：2005-08-02
申请号：US10455037
申请日：2003-06-05
申请人： Tzu-Jen Chou , Syun-Ming Jang , Ying-Ho Chen , Shen-Nan Lee
发明人： Tzu-Jen Chou , Syun-Ming Jang , Ying-Ho Chen , Shen-Nan Lee
IPC分类号： H01L21/3105 , H01L21/311 , H01L21/312 , H01L21/316 , H01L21/768
CPC分类号： H01L21/31053 , H01L21/31056 , H01L21/31116 , H01L21/76835 , H01L21/7684
摘要： A new method and structure is provided for the polishing of the surface of a layer of low-k dielectric material. Low-k dielectric material of low density and relatively high porosity is combined with low-k dielectric material of high density and low porosity whereby the latter high density layer is, prior to polishing of the combined layers, deposited over the former low density layer. Polishing of the combined layers removes flaking of the polished low-k layers of dielectric. This method can further be extended by forming conductive interconnects through the layers of dielectric, prior to the layer of dielectric.
摘要翻译：提供了一种用于抛光低k电介质材料层的表面的新方法和结构。低密度和相对高孔隙率的低k电介质材料与高密度和低孔隙率的低k电介质材料组合，由此后者的高密度层在组合层的抛光之前沉积在前者的低密度层上。组合层的抛光消除抛光的低k层电介质的剥落。在电介质层之前，可以通过在电介质层之间形成导电互连来进一步延长该方法。

3. 发明申请

US20050090096A1 Method of forming a contact on a silicon-on-insulator wafer 有权
标题翻译：在绝缘体上硅晶片上形成接触的方法
公开(公告)号：US20050090096A1
公开(公告)日：2005-04-28
申请号：US10691019
申请日：2003-10-22
申请人： Chuan-Ping Hou , Syun-Ming Jang , Ying-Ho Chen , Tung-Ching Tseng
发明人： Chuan-Ping Hou , Syun-Ming Jang , Ying-Ho Chen , Tung-Ching Tseng
IPC分类号： H01L21/00 , H01L21/306 , H01L21/44 , H01L21/4763 , H01L21/74 , H01L21/762
CPC分类号： H01L21/743 , H01L21/76283 , H01L21/76286
摘要： In a method of the present invention, an intermediate structure having a top surface is provided. An isolation trench is formed is the intermediate structure. Isolation material is deposited over the intermediate structure. The isolation material fills the isolation trench. Excess isolation material extends above the top surface of the intermediate structure. Part of the excess isolation material is removed until there is a predetermined thickness of isolation material remaining on the top surface of the intermediate structure. A contact opening is formed in the isolation material at the isolation trench. The contact opening extends through at least part of the intermediate structure. Contact material is deposited over the isolation material. The contact material fills the contact opening. Excess contact material, if any, that extends above the isolation material is removed. The excess isolation material is removed at least until the top surface of the intermediate structure is reached.
摘要翻译：在本发明的方法中，提供了具有顶表面的中间结构。形成隔离沟是中间结构。隔离材料沉积在中间结构上。隔离材料填充隔离沟槽。过多的隔离材料在中间结构的顶表面上方延伸。去除部分过量隔离材料，直到在中间结构的顶表面上剩余预定厚度的隔离材料。在隔离沟槽处的隔离材料中形成接触开口。接触开口延伸穿过中间结构的至少一部分。接触材料沉积在隔离材料上。接触材料填充接触开口。除去在隔离材料上方延伸的过量接触材料（如果有的话）。至少直到达到中间结构的顶表面去除多余隔离材料。

4. 发明授权

US06869858B2 Shallow trench isolation planarized by wet etchback and chemical mechanical polishing 失效
标题翻译：通过湿回蚀和化学机械抛光平坦化的浅沟槽隔离
公开(公告)号：US06869858B2
公开(公告)日：2005-03-22
申请号：US10426529
申请日：2003-04-30
申请人： Syun-Ming Jang , Ying-Ho Chen
发明人： Syun-Ming Jang , Ying-Ho Chen
IPC分类号： H01L21/3105 , H01L21/762 , H01L21/76
CPC分类号： H01L21/76245 , H01L21/31053
摘要： A method for forming a series of patterned planarized aperture fill layers within a series of apertures within a topographic substrate layer employed within a microelectronics fabrication. There is first provided a topographic substrate layer employed within a microelectronics fabrication, where the topographic substrate layer comprises a series of mesas of substantially equivalent height but of differing widths and the series of mesas is separated by a series of apertures. There is then formed upon the topographic substrate layer a blanket aperture fill layer. The blanket aperture fill layer is formed employing a simultaneous deposition and sputter method. The blanket aperture fill layer fills the series of apertures to a planarizing thickness at least as high as the height of the mesas while simultaneously forming a series of protrusions of the blanket aperture fill layer corresponding with the tops of the series of mesas, where the thickness of a protrusion of the blanket aperture fill layer over a narrow mesa is less than the thickness of a protrusion of the blanket aperture fill layer over a wide mesa. The simultaneous deposition and sputter method employs a deposition rate:sputter rate ratio which provides sufficient thickness of the blanket aperture fill layer over the narrow mesa to insure coverage of the edges of the mesas. A blanket etching process is employed to remove a portion of the blanket aperture fill layer so that chemical mechanical polish (CMP) planarizing of the residual blanket aperture fill layer forms the series of patterned planarized aperture fill layers within the series of apertures.
摘要翻译：一种用于在微电子学制造中使用的地形衬底层内的一系列孔内形成一系列图案化的平坦化孔填充层的方法。首先提供了在微电子制造中使用的地形衬底层，其中地形衬底层包括基本上等同的高度但具有不同宽度的一系列台面，并且一系列台面由一系列孔分隔开。然后在地形衬底层上形成橡皮布孔填充层。使用同时沉积和溅射方法形成橡皮布孔填充层。橡皮布孔填充层将一系列孔填充至至少与台面高度相同的平坦化厚度，同时形成与一系列台面的顶部相对应的橡皮布孔填充层的一系列突起，其中厚度在窄的台面上的橡皮布孔填充层的突起的厚度小于宽台面上的橡皮布孔填充层的突起的厚度。同时沉积和溅射方法采用沉积速率：溅射速率比，其提供在窄台面上的覆盖孔填充层的足够厚度，以确保台面边缘的覆盖。采用毯式蚀刻工艺来去除橡皮布孔填充层的一部分，使得残余橡皮布孔填充层的化学机械抛光（CMP）平面化在一系列孔内形成一系列图案化的平坦化孔填充层。

5. 发明授权

US06620034B2 Way to remove Cu line damage after Cu CMP 有权
标题翻译： Cu CMP后去除Cu线损伤的方法
公开(公告)号：US06620034B2
公开(公告)日：2003-09-16
申请号：US10043780
申请日：2002-01-14
申请人： Tsu Shih , Jih-Churng Jwu , Ying-Ho Chen , Syun-Ming Jang
发明人： Tsu Shih , Jih-Churng Jwu , Ying-Ho Chen , Syun-Ming Jang
IPC分类号： B24B100
CPC分类号： B24B37/12 , B24B37/015 , B24B55/02
摘要： The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.
摘要翻译：本发明提供了一种方法和装置，其通过在低温下进行CMP工艺，并且通过添加用作腐蚀抑制剂的浆料在CMP工艺期间保持该低温来防止铜线的CMP中的铜离子的累积。

6. 发明授权

US06422929B1 Polishing pad for a linear polisher and method for forming 有权
标题翻译：线性抛光机用抛光垫及成型方法
公开(公告)号：US06422929B1
公开(公告)日：2002-07-23
申请号：US09541070
申请日：2000-03-31
申请人： Syun-Ming Jang , Ying-Ho Chen
发明人： Syun-Ming Jang , Ying-Ho Chen
IPC分类号： B24B2100
CPC分类号： B24B37/24 , B24B21/04 , B24B37/26 , B24D18/0063
摘要： A polishing pad for use in a linear polisher, and more specifically, for a linear chemical mechanical polishing apparatus that has improved polishing uniformity is described. The polishing pad is provided with a top surface for engaging a wafer surface to be polished. The top surface has a center portion and two oppositely situated edge portions. The polishing pad is further provided with a multiplicity of voids situated in the top surface of the pad body such that the top surface has a void-to-surface ratio that is greater in the two edge portions than in the center portion of the top surface. The present invention novel polishing pad provides a more uniform polishing across a wafer surface, together with an improved planarity after polishing.
摘要翻译：描述了一种用于线性抛光机的抛光垫，更具体地说，涉及具有改善的抛光均匀性的线性化学机械抛光装置。抛光垫设置有用于接合要抛光的晶片表面的顶表面。顶表面具有中心部分和两个相对设置的边缘部分。抛光垫还设置有位于衬垫主体的顶表面中的多个空隙，使得顶表面在两个边缘部分中的空隙与表面之比大于顶表面的中心部分。本发明的新型抛光垫在晶片表面上提供更均匀的抛光以及抛光后的改进的平面度。

7. 发明授权

US06376377B1 Post chemical mechanical polish (CMP) planarizing substrate cleaning method employing enhanced substrate hydrophilicity 有权
标题翻译：后化学机械抛光（CMP）平面化基板清洗方法采用增强的基板亲水性
公开(公告)号：US06376377B1
公开(公告)日：2002-04-23
申请号：US09541487
申请日：2000-04-03
申请人： Weng Chang , Ying-Ho Chen , Jih-Churng Twu , Syun-Ming Jang
发明人： Weng Chang , Ying-Ho Chen , Jih-Churng Twu , Syun-Ming Jang
IPC分类号： H01L21302
CPC分类号： H01L21/76826 , H01L21/02074 , H01L21/3212 , H01L21/76801 , H01L21/76807 , H01L21/76825 , H01L21/76888
摘要： Within a method for removing from over a substrate a chemical mechanical polish (CMP) residue layer there is first provided a substrate. There is then formed over the substrate: (1) a chemical mechanical polish (CMP) substrate layer having an aperture formed therein; (2) a chemical mechanical polish (CMP) planarized patterned layer formed within the aperture within the chemical mechanical polish (CMP) substrate layer; and (3) a chemical mechanical polish (CMP) residue layer formed upon at least one of the chemical mechanical polish substrate layer and the chemical mechanical polish (CMP) planarized patterned layer, where at least one of the chemical mechanical polish (CMP) substrate layer and the chemical mechanical polish (CMP) planarized patterned layer has a first aqueous contact angle. There is then treated the at least one of the chemical mechanical polish (CMP) substrate layer and the chemical mechanical polish (CMP) planarized patterned layer having the first aqueous contact angle to provide at least one of a hydrophilic chemical mechanical polish (CMP) substrate layer and a hydrophilic chemical mechanical polish (CMP) planarized patterned layer having a second aqueous contact angle less than the first aqueous contact angle. Finally, there is then removed the chemical mechanical polish (CMP) residue layer from the at least one of the hydrophilic chemical mechanical polish (CMP) substrate layer and the hydrophilic chemical mechanical polish (CMP) planarized patterned layer with an aqueous cleaner composition.
摘要翻译：在用于从衬底上除去化学机械抛光（CMP）残留层的方法中，首先提供衬底。然后在衬底上形成：（1）其中形成有孔的化学机械抛光（CMP）衬底层; （2）化学机械抛光（CMP）平面化图案层，其形成在化学机械抛光（CMP）衬底层内的孔内; 化学机械抛光（CMP）残留层形成在至少一个化学机械抛光衬底层和化学机械抛光（CMP）平面化图案层上，其中化学机械抛光（CMP）衬底层和化学机械抛光（CMP）平面化图案层具有第一水接触角。然后，处理具有第一水接触角的化学机械抛光（CMP）衬底层和化学机械抛光（CMP）平坦化图案化层中的至少一个以提供亲水化学机械抛光（CMP）衬底中的至少一个层和亲水化学机械抛光（CMP）平面化图案层，其具有小于第一水接触角的第二水接触角。最后，用水性清洁剂组合物从亲水化学机械抛光（CMP）衬底层和亲水化学机械抛光（CMP）平坦化图案化层中的至少一个去除化学机械抛光（CMP）残留层。

8. 发明授权

US06274483B1 Method to improve metal line adhesion by trench corner shape modification 有权
标题翻译：通过沟角修改金属线附着力的方法
公开(公告)号：US06274483B1
公开(公告)日：2001-08-14
申请号：US09483933
申请日：2000-01-18
申请人： Weng Chang , Ying-Ho Chen , Syun-Ming Jang
发明人： Weng Chang , Ying-Ho Chen , Syun-Ming Jang
IPC分类号： H01L214763
CPC分类号： H01L21/76804 , H01L21/7688
摘要： A new method is provided for the creation of the trenches or line patterns of damascene structures. Under the first embodiment of the invention, the trenches that are created for the copper interconnect lines are sputter etched as a result of which the corners of the trenches around the top elevation of the trenches are rounded. Under the second embodiment of the invention a disposable hard mask is created over the surface of the dielectric after which the trenches for the interconnect lines are created. The surface of the hard mask layer including the created trenches are rf sputter etched resulting in a sharp reduction of the angle of incidence between sidewalls of the trenches around the perimeter of the trenches and the surface of the layer of dielectric. The barrier and seed layers are deposited over the surface of the disposable hard mask including the created trenches, the deposited copper is polished down to the surface of the dielectric.
摘要翻译：提供了一种用于创建大马士革结构的沟槽或线条图案的新方法。在本发明的第一实施例中，为铜互连线创建的沟槽被溅射蚀刻，结果，沟槽顶部高度周围的沟槽的角部是圆形的。在本发明的第二实施例中，在电介质的表面上形成一次性硬掩模，之后形成用于互连线的沟槽。包括产生的沟槽的硬掩模层的表面被溅射蚀刻，导致围绕沟槽的周边和电介质层的表面的沟槽的侧壁之间的入射角的急剧减小。阻挡层和种子层沉积在包括所产生的沟槽的一次性硬掩模的表面上，沉积的铜被抛光到电介质的表面。

9. 发明授权

US06239002B1 Thermal oxidizing method for forming with attenuated surface sensitivity ozone-teos silicon oxide dielectric layer upon a thermally oxidized silicon substrate layer 有权
标题翻译：在氧化硅衬底层上形成具有衰减表面灵敏度的臭氧氧化硅氧化物介电层的热氧化方法
公开(公告)号：US06239002B1
公开(公告)日：2001-05-29
申请号：US09174660
申请日：1998-10-19
申请人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
发明人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
IPC分类号： H01L2176
CPC分类号： H01L21/76224 , H01L21/76205
摘要： A method for forming a trench isolation region within a trench within a silicon substrate. There is first provided a silicon substrate having a trench formed therein. There is then formed over the silicon substrate and filling the trench a silicon oxide trench fill layer. There is then thermally oxidized the silicon substrate and the silicon oxide trench fill layer within a thermal oxidation atmosphere to form a densified silicon oxide trench fill layer upon a silicon oxide trench liner layer within an oxidized trench within an oxidized silicon substrate, where the silicon oxide trench liner layer is formed from oxidation of the silicon substrate when forming the oxidized silicon substrate.
摘要翻译：一种用于在硅衬底内的沟槽内形成沟槽隔离区的方法。首先提供其中形成有沟槽的硅衬底。然后形成在硅衬底上并且将沟槽填充到氧化硅沟槽填充层。然后在热氧化气氛中热氧化硅衬底和氧化硅沟槽填充层，以在氧化硅衬底内的氧化沟槽内的氧化硅沟槽衬垫层上形成致密的氧化硅沟槽填充层，其中氧化硅当形成氧化硅衬底时，沟槽衬垫层由硅衬底的氧化形成。

10. 发明授权

US06171896B2 Method of forming shallow trench isolation by HDPCVD oxide 失效
标题翻译：通过HDPCVD氧化物形成浅沟槽隔离的方法
公开(公告)号：US06171896B2
公开(公告)日：2001-01-09
申请号：US08794597
申请日：1997-02-03
申请人： Syun-Ming Jang , Chen-Hua Yu , Ying-Ho Chen
发明人： Syun-Ming Jang , Chen-Hua Yu , Ying-Ho Chen
IPC分类号： H01L218238
CPC分类号： H01L21/76229
摘要： A method for forming planarized shallow trench isolation is described. A pad oxide layer is grown over the surface of a semiconductor substrate. A nitride layer is deposited overlying the pad oxide layer. A plurality of isolation trenches are etched through the nitride and pad oxide layers into the semiconductor substrate wherein there are at least one first wide nitride region between two of the trenches and at least one second narrow nitride region between another two of the trenches. A high density plasma oxide layer is deposited over the nitride layer and within the isolation trenches wherein the high density plasma oxide layer fills the isolation trenches and wherein the high density plasma oxide deposits more thickly in the first region over the wide nitride layer and deposits more thinly in the second region over the narrow nitride layer. A photoresist mask is formed over the high density plasma oxide layer. The substrate is exposed to actinic light wherein a central portion of the first region is exposed. The high density plasma oxide layer is etched away where it has been exposed. The high density plasma oxide layer remaining is polished away whereby the substrate is planarized and fabrication of said integrated circuit device is completed.
摘要翻译：描述了形成平坦化浅沟槽隔离的方法。衬底氧化物层生长在半导体衬底的表面上。在衬垫氧化物层上沉积氮化物层。通过氮化物和衬垫氧化物层蚀刻多个隔离沟槽到半导体衬底中，其中在两个沟槽之间存在至少一个第一宽氮化物区域和另外两个沟槽之间的至少一个第二窄氮化物区域。高密度等离子体氧化物层沉积在氮化物层之上和隔离沟槽内，其中高密度等离子体氧化物层填充隔离沟槽，并且其中高密度等离子体氧化物在宽氮化物层上的第一区域中更厚地沉积并沉积更多在窄的氮化物层上的第二区域中薄。在高密度等离子体氧化物层上形成光刻胶掩模。将基板暴露于其中暴露第一区域的中心部分的光化光。将高密度等离子体氧化物层蚀刻掉已被暴露的地方。抛光剩余的高密度等离子体氧化物层，由此使衬底平坦化，并且完成所述集成电路器件的制造。

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