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1. 发明授权

US07407601B2 Polymeric particle slurry system and method to reduce feature sidewall erosion 有权
标题翻译：聚合物颗粒浆体系和减少壁面侵蚀的方法
公开(公告)号：US07407601B2
公开(公告)日：2008-08-05
申请号：US10423569
申请日：2003-04-24
申请人： Shen-Nan Lee , Ying-Ho Chen , Syun-Ming Jang , Tzu-Jen Chou
发明人： Shen-Nan Lee , Ying-Ho Chen , Syun-Ming Jang , Tzu-Jen Chou
IPC分类号： C09K5/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： A slurry system for a chemical mechanical polishing (CMP) process and a method for using the same wherein the slurry system includes an aqueous dispersion comprising at least abrasive polymer containing particles in an alkaline solution having a pH of less than about 9.5; and wherein the method includes providing a semiconductor wafer process surface including a oxide containing material and metal filled semiconductor features; providing the system; and, polishing in a CMP process the semiconductor wafer process surface using the slurry system to remove at least a portion of the oxide containing material and the metal comprising the metal filled semiconductor features.
摘要翻译：用于化学机械抛光（CMP）方法的浆料系统及其使用方法，其中所述浆料系统包括含有至少含有在pH小于约9.5的碱性溶液中的含有颗粒的磨料聚合物的水分散体; 并且其中所述方法包括提供包括含氧化物材料和金属填充半导体特征的半导体晶片工艺表面; 提供系统; 并且在CMP工艺中使用浆料系统在半导体晶片工艺表面上抛光以去除含氧化物材料的至少一部分和包含金属填充的半导体特征的金属。

2. 发明授权

US06946397B2 Chemical mechanical polishing process with reduced defects in a copper process 失效
标题翻译：化学机械抛光工艺，减少铜工艺中的缺陷
公开(公告)号：US06946397B2
公开(公告)日：2005-09-20
申请号：US10714985
申请日：2003-11-17
申请人： William Hong , Chia-Che Chung , Chi-Wei Chung , Wen-Chih Chiou , Ying-Ho Chen , Syun-Ming Jang
发明人： William Hong , Chia-Che Chung , Chi-Wei Chung , Wen-Chih Chiou , Ying-Ho Chen , Syun-Ming Jang
IPC分类号： B24B1/00 , H01L21/02 , H01L21/302 , H01L21/3105 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02074 , H01L21/02065 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： An oxide polishing process that is part of a CMP process flow is disclosed. After a copper layer is polished at a first polishing station and a diffusion barrier layer is polished at a second polishing station, a key sequence at a third polish station is the application of a first oxide slurry and a first DI water rinse followed by a second oxide slurry and then a second DI water rinse. As a result, defect counts are reduced from several thousand to less than 100. Another important factor is a low down force that enables more efficient particle removal. The improved oxide polishing process has the same throughput as a single oxide polish and a DI water rinse method and may be implemented in any three slurry copper CMP process flow.
摘要翻译：公开了作为CMP工艺流程的一部分的氧化物抛光工艺。在第一抛光站抛光铜层并且在第二抛光站抛光扩散阻挡层之后，在第三抛光工位上的键序列是施加第一氧化物浆料和第一DI水冲洗，然后是第二抛光氧化物浆液，然后用第二次DI水冲洗。因此，缺陷计数从几千减少到小于100.另一个重要因素是能够更有效地除去颗粒的低下降力。改进的氧化物抛光方法具有与单一氧化物抛光剂和DI水漂洗方法相同的生产量，并且可以在任何三种浆料铜CMP工艺流程中实施。

3. 发明授权

US06919276B2 Method to reduce dishing and erosion in a CMP process 失效
标题翻译：减少CMP过程中凹陷和侵蚀的方法
公开(公告)号：US06919276B2
公开(公告)日：2005-07-19
申请号：US10423436
申请日：2003-04-24
申请人： Shen-Nan Lee , Ying-Ho Chen , Syun-Ming Jang , Tzu-Jen Chou , Jin-Yiing Song
发明人： Shen-Nan Lee , Ying-Ho Chen , Syun-Ming Jang , Tzu-Jen Chou , Jin-Yiing Song
IPC分类号： H01L21/321 , H01L21/768 , H01L21/302
CPC分类号： H01L21/7684 , H01L21/3212
摘要： A CMP process for selectively polishing an overlying material layer with an underlying layer comprising at least one material in a semiconductor device fabrication process including providing a semiconductor wafer process surface including a first material layer overlying a second layer including one material; mixing at least two slurry mixtures including a first CMP slurry formulation optimized for removing the first material layer and a second CMP slurry formulation optimized for removing the at least a second layer to form a slurry formulation mixture; and, carrying out a CMP process using the slurry formulation mixture to remove the first material layer and at least a portion of the at least a second layer.
摘要翻译：一种CMP工艺，用于在半导体器件制造工艺中用包括至少一种材料的下层选择性地抛光覆盖材料层，所述半导体器件制造工艺包括提供包括覆盖包括一种材料的第二层的第一材料层的半导体晶片工艺表面; 混合至少两种浆料混合物，其包括为了除去第一材料层而优化的第一CMP浆料配制剂和优化用于除去至少第二层以形成浆料配制混合物的第二CMP浆料配制剂; 以及使用所述浆料制剂混合物进行CMP处理以去除所述第一材料层和所述至少第二层的至少一部分。

4. 发明授权

US06500753B2 Method to reduce the damages of copper lines 有权
标题翻译：减少铜线损坏的方法
公开(公告)号：US06500753B2
公开(公告)日：2002-12-31
申请号：US09838209
申请日：2001-04-20
申请人： Syun-Ming Jang , Ying-Ho Chen , Jih-Churng Twu , Chen-Hua Yu
发明人： Syun-Ming Jang , Ying-Ho Chen , Jih-Churng Twu , Chen-Hua Yu
IPC分类号： H01L218238
CPC分类号： H01L21/7684 , H01L21/76838 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： The invention teaches the addition of copper lines, these copper lines to be added to isolated copper lines or to selected copper lines within a collection of copper lines. The invention also teaches the addition of copper end caps to isolated copper lines or to selected copper lines within a collection of copper lines. The invention further teaches the widening of copper lines for isolated copper lines or selected copper lines within a collection of copper lines.
摘要翻译：本发明教导了铜线的添加，这些铜线被添加到隔离铜线或铜线集合内的选定铜线。本发明还教导了将铜端盖添加到铜线集合中的隔离铜线或铜线。本发明进一步教导了铜线集合中用于隔离铜线或选定铜线的铜线的扩大。

5. 发明授权

US06409587B1 Dual-hardness polishing pad for linear polisher and method for fabrication 有权
标题翻译：用于线性抛光机的双硬度抛光垫及其制造方法
公开(公告)号：US06409587B1
公开(公告)日：2002-06-25
申请号：US09713827
申请日：2000-11-15
申请人： Tsu Shih , Syun-Ming Jang , Ying-Ho Chen , Wen-Chih Chiou
发明人： Tsu Shih , Syun-Ming Jang , Ying-Ho Chen , Wen-Chih Chiou
IPC分类号： B24D1100
CPC分类号： B24D11/08 , B24B21/04 , B24B37/24 , G06T9/007
摘要： A composite, dual-hardness polishing pad for use in a linear chemical mechanical polishing apparatus and a method for forming the pad are described. In the composite, dual-hardness polishing pad, a pad body is first provided which has a leading edge and a trailing edge for mounting to a linear belt immediately adjacent to a second polishing pad. The pad body is fabricated of a material that has a first hardness, the leading edge contacts an object being polished on the composite polishing pad before the trailing edge when the linear belt turns in a linear polishing process. The composite polishing pad further includes a buffer pad that is adhesively joined to the leading edge of the pad body for contacting the object that is being polished, the buffer pad may be fabricated of a material that has a second hardness which is at least 20% smaller than the first hardness such that impact on the object being polished is minimized during a linear polishing process. The present invention is further directed to a method for adhesively joining a buffer pad to a pad body of a polishing pad.
摘要翻译：描述了用于线性化学机械抛光装置的复合双硬度抛光垫和用于形成垫的方法。在复合材料双硬度抛光垫中，首先提供具有前缘和后缘的垫体，用于安装在紧邻第二抛光垫的线性带上。垫体由具有第一硬度的材料制成，当线性带在线性抛光过程中转动时，前缘在后缘之前在复合抛光垫上接触待抛光的物体。所述复合抛光垫还包括缓冲垫，所述缓冲垫粘合地连接到所述垫体的前缘以接触被抛光的物体，所述缓冲垫可以由具有至少20％的第二硬度的材料制成，小于第一硬度，使得在线性抛光工艺期间对被抛光物体的冲击最小化。本发明还涉及一种用于将缓冲垫粘合地结合到抛光垫的衬垫体的方法。

6. 发明授权

US06358119B1 Way to remove CU line damage after CU CMP 有权
标题翻译：在CU CMP之后删除CU线损坏的方法
公开(公告)号：US06358119B1
公开(公告)日：2002-03-19
申请号：US09336808
申请日：1999-06-21
申请人： Tsu Shih , Jih-Churng Twu , Ying-Ho Chen , Syun-Ming Jang
发明人： Tsu Shih , Jih-Churng Twu , Ying-Ho Chen , Syun-Ming Jang
IPC分类号： B24B100
CPC分类号： B24B37/12 , B24B37/015 , B24B55/02
摘要： The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.
摘要翻译：本发明提供了一种方法和装置，其通过在低温下进行CMP工艺，并且通过添加用作腐蚀抑制剂的浆料在CMP工艺期间保持该低温来防止铜线的CMP中的铜离子的累积。

7. 发明授权

US5968687A Mask for recovering alignment marks after chemical mechanical polishing 有权
标题翻译：化学机械抛光后恢复对准标记的面膜
公开(公告)号：US5968687A
公开(公告)日：1999-10-19
申请号：US196601
申请日：1998-11-20
申请人： Jui-Yu Chang , Chunshing Chen , Syun-Ming Jang , Ying-Ho Chen
发明人： Jui-Yu Chang , Chunshing Chen , Syun-Ming Jang , Ying-Ho Chen
IPC分类号： H01L23/544 , G03F9/00
CPC分类号： H01L23/544 , H01L2223/54453 , H01L2223/54493 , H01L2924/0002
摘要： A mask pattern and method are described for the recovery of alignment marks on an integrated circuit wafer without the use of additional masks. The mask pattern and method provide means to recover the alignment marks after forming a metal layer on a planarized inter-level dielectric layer. The pattern which conventional methods have placed on a separate mask is formed in the end regions of a mask used for forming a pattern on the active region of the wafer. In order to fit the pattern in the end regions of the mask the pattern is divided into two parts. When the pattern is used to expose a layer of photoresist two exposure steps are used.
摘要翻译：描述了用于在集成电路晶片上恢复对准标记的掩模图案和方法，而不使用附加掩模。掩模图案和方法提供了在平坦化的层间电介质层上形成金属层之后恢复对准标记的装置。在用于在晶片的有源区上形成图案的掩模的端部区域中形成常规方法已经放置在单独的掩模上的图案。为了将图案装配在掩模的端部区域中，图案被分为两部分。当使用图案曝光一层光致抗蚀剂时，使用两个曝光步骤。

8. 发明授权

US06634930B1 Method and apparatus for preventing metal corrosion during chemical mechanical polishing 有权
标题翻译：化学机械抛光时防止金属腐蚀的方法和装置
公开(公告)号：US06634930B1
公开(公告)日：2003-10-21
申请号：US09635013
申请日：2000-08-09
申请人： Ying-Ho Chen , Wen-Chih Chiou , Tsu Shih , Syun-Ming Jang , Chia-Ming Yang
发明人： Ying-Ho Chen , Wen-Chih Chiou , Tsu Shih , Syun-Ming Jang , Chia-Ming Yang
IPC分类号： B24B100
CPC分类号： B24B37/04 , B24B57/02
摘要： A method for preventing copper corrosion on a wafer during a chemical mechanical polishing process when the process is temporarily halted due to equipment malfunction and an apparatus for carrying out such method are disclosed. In the method, after the chemical mechanical polishing process is stopped for correcting equipment malfunction or any other processing problems, a cleaning solvent is sprayed toward the wafer surface to remove substantially all slurry solution from the surface to prevent corrosion of the copper layer, or other metal layer, by the slurry solution. The cleaning solvent may be sprayed from spray nozzles mounted around and juxtaposed to the polishing table onto which the polishing pad is mounted as long as the spray nozzles do not interfere with the rotation of the polishing pad.
摘要翻译：本发明公开了一种在化学机械抛光工艺中由于设备故障暂时停止处理而在晶片上进行铜腐蚀的方法及其实施方法。在该方法中，在化学机械抛光处理停止以纠正设备故障或任何其它处理问题之后，向晶片表面喷射清洗溶剂，以从表面去除基本上所有的浆液，以防止铜层或其它金属层，通过浆料溶液。只要喷嘴不干扰抛光垫的旋转，清洁溶剂可以从安装在其周围的喷嘴喷射并且并列在抛光台上，抛光垫安装在抛光台上。

9. 发明授权

US06620725B1 Reduction of Cu line damage by two-step CMP 有权
标题翻译：通过两步CMP减少Cu线损伤
公开(公告)号：US06620725B1
公开(公告)日：2003-09-16
申请号：US09395287
申请日：1999-09-13
申请人： Shau-Lin Shue , Ming-Hsing Tsai , Wen-Jye Tsai , Ying-Ho Chen , Tsu Shih , Jih-Churng Twu , Syun-Ming Jang
发明人： Shau-Lin Shue , Ming-Hsing Tsai , Wen-Jye Tsai , Ying-Ho Chen , Tsu Shih , Jih-Churng Twu , Syun-Ming Jang
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , H01L21/3212
摘要： A process for performing CMP in two steps is described. After trenches have been formed and over-filled with copper, in a first embodiment of the invention a hard pad is used initially to remove most of the copper until a point is reached where dishing effects would begin to appear. A soft pad is then substituted and CMP continued until all copper has been removed, except in the trenches. In a second embodiment, CMP is initiated using a pad to which high-pressure is applied and which rotates relatively slowly. As before, this combination is used until the point is reached where dishing effects would begin to appear. Then, relatively low pressure in combination with relatively high rotational speed is used until all copper has been removed, except in the trenches. Both of these embodiments result in trenches which are just-filled with copper, with little or no dishing effects, and with all traces of copper removed everywhere except in the trenches themselves.
摘要翻译：描述用于在两个步骤中执行CMP的过程。在沟槽已经形成并且用铜过度填充之后，在本发明的第一实施例中，最初使用硬焊盘去除大部分铜，直到达到一个点，其中凹陷效应将开始出现。然后取代软焊盘，继续CMP直到除了沟槽中除去所有的铜。在第二实施例中，使用施加高压并且相对缓慢地旋转的衬垫来启动CMP。如前所述，使用这种组合，直到达到点，其中凹陷效应将开始出现。然后，除了沟槽之外，使用相对较低的压力结合相对高的转速直到除去所有的铜。这两个实施例都导致刚好填充铜的沟槽，几乎没有凹陷效应，并且除了沟槽本身之外，所有痕迹的铜都被去除。

10. 发明授权

US06417106B1 Underlayer liner for copper damascene in low k dielectric 有权
标题翻译：低k电介质中铜镶嵌层的底层衬垫
公开(公告)号：US06417106B1
公开(公告)日：2002-07-09
申请号：US09431150
申请日：1999-11-01
申请人： Jih-Churng Twu , Ying-Ho Chen , Tsu Shih , Syun-Ming Jang
发明人： Jih-Churng Twu , Ying-Ho Chen , Tsu Shih , Syun-Ming Jang
IPC分类号： H01L21302
CPC分类号： H01L21/7684 , H01L21/76829
摘要： A process for reducing dishing in damascene structures formed in low k organic dielectrics is described. A key feature is the insertion of a liner layer between the low k dielectric layer and the etch stop layer. The only requirement for the liner material is that it should have different etching characteristics from the etch stop material so that when trenches are etched in the dielectric they extend as far as the etch stop layer, in the normal way. When this is done it is found that dishing, after CMP, is significantly reduced, particularly for trench structures made up of multiple narrow trenches spaced close together.
摘要翻译：描述了一种用于减少在低k有机电介质中形成的镶嵌结构中的凹陷的方法。一个关键特征是在低k电介质层和蚀刻停止层之间插入衬里层。衬垫材料的唯一要求是它应该具有与蚀刻停止材料不同的蚀刻特性，使得当在电介质中蚀刻沟槽时，它们以正常方式延伸到蚀刻停止层的最远处。当这样做时，发现在CMP之后的凹陷显着减少，特别是对于由几个间隔得很近的窄沟槽组成的沟槽结构。

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