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1. 发明授权

US06620034B2 Way to remove Cu line damage after Cu CMP 有权
标题翻译： Cu CMP后去除Cu线损伤的方法
公开(公告)号：US06620034B2
公开(公告)日：2003-09-16
申请号：US10043780
申请日：2002-01-14
申请人： Tsu Shih , Jih-Churng Jwu , Ying-Ho Chen , Syun-Ming Jang
发明人： Tsu Shih , Jih-Churng Jwu , Ying-Ho Chen , Syun-Ming Jang
IPC分类号： B24B100
CPC分类号： B24B37/12 , B24B37/015 , B24B55/02
摘要： The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.
摘要翻译：本发明提供了一种方法和装置，其通过在低温下进行CMP工艺，并且通过添加用作腐蚀抑制剂的浆料在CMP工艺期间保持该低温来防止铜线的CMP中的铜离子的累积。

2. 发明授权

US06409587B1 Dual-hardness polishing pad for linear polisher and method for fabrication 有权
标题翻译：用于线性抛光机的双硬度抛光垫及其制造方法
公开(公告)号：US06409587B1
公开(公告)日：2002-06-25
申请号：US09713827
申请日：2000-11-15
申请人： Tsu Shih , Syun-Ming Jang , Ying-Ho Chen , Wen-Chih Chiou
发明人： Tsu Shih , Syun-Ming Jang , Ying-Ho Chen , Wen-Chih Chiou
IPC分类号： B24D1100
CPC分类号： B24D11/08 , B24B21/04 , B24B37/24 , G06T9/007
摘要： A composite, dual-hardness polishing pad for use in a linear chemical mechanical polishing apparatus and a method for forming the pad are described. In the composite, dual-hardness polishing pad, a pad body is first provided which has a leading edge and a trailing edge for mounting to a linear belt immediately adjacent to a second polishing pad. The pad body is fabricated of a material that has a first hardness, the leading edge contacts an object being polished on the composite polishing pad before the trailing edge when the linear belt turns in a linear polishing process. The composite polishing pad further includes a buffer pad that is adhesively joined to the leading edge of the pad body for contacting the object that is being polished, the buffer pad may be fabricated of a material that has a second hardness which is at least 20% smaller than the first hardness such that impact on the object being polished is minimized during a linear polishing process. The present invention is further directed to a method for adhesively joining a buffer pad to a pad body of a polishing pad.
摘要翻译：描述了用于线性化学机械抛光装置的复合双硬度抛光垫和用于形成垫的方法。在复合材料双硬度抛光垫中，首先提供具有前缘和后缘的垫体，用于安装在紧邻第二抛光垫的线性带上。垫体由具有第一硬度的材料制成，当线性带在线性抛光过程中转动时，前缘在后缘之前在复合抛光垫上接触待抛光的物体。所述复合抛光垫还包括缓冲垫，所述缓冲垫粘合地连接到所述垫体的前缘以接触被抛光的物体，所述缓冲垫可以由具有至少20％的第二硬度的材料制成，小于第一硬度，使得在线性抛光工艺期间对被抛光物体的冲击最小化。本发明还涉及一种用于将缓冲垫粘合地结合到抛光垫的衬垫体的方法。

3. 发明授权

US06358119B1 Way to remove CU line damage after CU CMP 有权
标题翻译：在CU CMP之后删除CU线损坏的方法
公开(公告)号：US06358119B1
公开(公告)日：2002-03-19
申请号：US09336808
申请日：1999-06-21
申请人： Tsu Shih , Jih-Churng Twu , Ying-Ho Chen , Syun-Ming Jang
发明人： Tsu Shih , Jih-Churng Twu , Ying-Ho Chen , Syun-Ming Jang
IPC分类号： B24B100
CPC分类号： B24B37/12 , B24B37/015 , B24B55/02
摘要： The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.
摘要翻译：本发明提供了一种方法和装置，其通过在低温下进行CMP工艺，并且通过添加用作腐蚀抑制剂的浆料在CMP工艺期间保持该低温来防止铜线的CMP中的铜离子的累积。

4. 发明授权

US06736701B1 Eliminate broken line damage of copper after CMP 失效
标题翻译：消除CMP后的铜线损伤
公开(公告)号：US06736701B1
公开(公告)日：2004-05-18
申请号：US09989838
申请日：2001-11-20
申请人： Shau-Lin Shue , Ying-Ho Chen , Wen-Chih Chiou , Tsu Shih , Syun-Ming Jang
发明人： Shau-Lin Shue , Ying-Ho Chen , Wen-Chih Chiou , Tsu Shih , Syun-Ming Jang
IPC分类号： B24B100
CPC分类号： B24B37/042 , B24B21/04
摘要： A new method is provided for the post-deposition treatment of copper lines. A damascene copper line pattern whereby a TaN barrier layer and a seed layer have been provided is polished. Under the first embodiment of the invention, the deposited copper is polished (Cu CMP), the surface of the wafer is rinsed using a first High Flow DI rinse that contains a TBA inhibitor. The TaN CMP is performed immediately following the first High Flow DI rinse. A second High Flow DI rinse is applied using DI water that contains TBA inhibitor. The required following rinse step is executed immediately after the second High Flow DI rinse has been completed. Under the second embodiment of the invention, the process of CMP has been divided in two distinct steps where the first step is aimed at corrosion elimination and the second step is aimed at elimination of mechanical damage to the polished copper. The processing conditions for the second processing step have been extended and optimized, thereby using a second belt of a CMP apparatus.
摘要翻译：提供了一种新的铜线后处理方法。抛光已经提供TaN阻挡层和种子层的镶嵌铜线图案。在本发明的第一实施例中，抛光沉积的铜（Cu CMP），使用含有TBA抑制剂的第一高流量DI冲洗冲洗晶片的表面。在第一次高流量DI冲洗之后立即执行TaN CMP。使用含有TBA抑制剂的去离子水进行第二次高流量DI冲洗。第二次高流量DI冲洗完成后立即执行所需的冲洗步骤。在本发明的第二个实施方案中，CMP的方法分为两个不同的步骤，其中第一步骤旨在消除腐蚀，第二步骤旨在消除抛光铜的机械损伤。第二处理步骤的处理条件已被扩展和优化，从而使用CMP设备的第二带。

5. 发明授权

US06635211B2 Reinforced polishing pad for linear chemical mechanical polishing and method for forming 有权
公开(公告)号：US06635211B2
公开(公告)日：2003-10-21
申请号：US09888789
申请日：2001-06-25
申请人： Wen-Chih Chiou , Ying-Ho Chen , Tsu Shih , Syun-Ming Jang
发明人： Wen-Chih Chiou , Ying-Ho Chen , Tsu Shih , Syun-Ming Jang
IPC分类号： B29C3912
CPC分类号： B29C39/025 , B24B37/042 , B29C70/64 , B29C2793/009 , B29K2105/126 , B29K2105/128 , B29K2105/16 , B29L2031/709 , B29L2031/736
摘要： A continuous loop polishing pad that is reinforced by a reinforcing filler and a method for fabricating the polishing pad are described. The reinforced polishing pad is constructed by a sub-layer and a top layer, wherein the sub-layer defines an inner diameter of the polishing pad and contains a reinforcing filler with an aspect ratio of at least 10 oriented substantially in a circumferential direction of the continuous loop polishing pad. The top layer is laminated to the sub-layer with a top surface defining an outer diameter of the polishing pad, while both the sub-layer and the top layer are formed of a polymeric material. The invention further describes a method for fabricating the reinforced polishing pad in a continuous loop.

6. 发明授权

US06589872B1 Use of low-high slurry flow to eliminate copper line damages 有权
标题翻译：使用低 - 高泥浆流量来消除铜线损坏
公开(公告)号：US06589872B1
公开(公告)日：2003-07-08
申请号：US09304302
申请日：1999-05-03
申请人： Jih-Churng Twu , Ying-Ho Chen , Tsu Shih , Syun-Ming Jang
发明人： Jih-Churng Twu , Ying-Ho Chen , Tsu Shih , Syun-Ming Jang
IPC分类号： H01K2120
CPC分类号： B24B37/042 , B24B49/00 , B24B57/02
摘要： The invention teaches a new method of applying slurry during the process of chemical mechanical polishing of copper surfaces. By varying the rate of slurry deposition, starting out with a low rate of slurry flow that is increased as the polishing process proceeds, the invention obtains good planarity for copper surfaces while saving on the amount of slurry that is being used for the copper surface polishing process.
摘要翻译：本发明教导了在铜表面的化学机械抛光过程中施加浆料的新方法。通过改变浆料沉积速率，随着抛光工艺的进行，随着浆料流动速度的降低而开始，本发明对于铜表面获得了良好的平面性，同时节省了用于铜表面抛光的浆料量处理。

7. 发明授权

US06429118B1 Elimination of electrochemical deposition copper line damage for damascene processing 有权
标题翻译：消除电化学沉积铜线损坏镶嵌加工
公开(公告)号：US06429118B1
公开(公告)日：2002-08-06
申请号：US09664414
申请日：2000-09-18
申请人： Ying-Ho Chen , Syun-Ming Jang , Jih-Churng Twu , Tsu Shih
发明人： Ying-Ho Chen , Syun-Ming Jang , Jih-Churng Twu , Tsu Shih
IPC分类号： H01L213213
CPC分类号： H01L21/76802 , H01L21/2855 , H01L21/7684 , H01L21/76877
摘要： An improved and new process, used for the elimination of copper line damage in damacene processing, is disclosed. By depositing copper by physical vapor deposition (PVD), sputtering, preferably by an ion metal plasma (IMP) scheme or chemical vapor deposition (CVD), the deposited copper fills pinholes or intra-cracks (micro-cracks), caused by poor gap filling of purely electrochemical deposition of copper plating. By this process or method, chemical attack on copper lines, by chemicals in the subsequent chemical mechanical polish (CMP) back and post-cleaning steps, is prevented.
摘要翻译：公开了一种改进和新的方法，用于消除碲化氢处理中的铜线损伤。通过物理气相沉积（PVD），优选通过离子金属等离子体（IMP）方案或化学气相沉积（CVD）沉积铜，沉积的铜填充由差的间隙引起的针孔或裂纹（微裂纹）填充电镀纯电化学沉积。通过该方法或方法，可以防止化学品在后续的化学机械抛光（CMP）背面和后清洗步骤中对铜线进行化学侵蚀。

8. 发明授权

US06383930B1 Method to eliminate copper CMP residue of an alignment mark for damascene processes 有权
标题翻译：消除用于镶嵌工艺的对准标记的铜CMP残留物的方法
公开(公告)号：US06383930B1
公开(公告)日：2002-05-07
申请号：US09902896
申请日：2001-07-12
申请人： Ying-Ho Chen , Wen-Chih Chiou , Tsu Shih , Syun-Ming Jang
发明人： Ying-Ho Chen , Wen-Chih Chiou , Tsu Shih , Syun-Ming Jang
IPC分类号： H01K2144
CPC分类号： H01L21/76885 , H01L21/7684 , H01L21/76877 , H01L23/544 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： A new method is provided that affects the polishing rate of the surface of a layer of copper, that has been deposited over the surface of a layer of dielectric. Copper damascene structures have been created in the surface of the layer of dielectric, the layer of dielectric also overlies an alignment mark. The surface of the layer of dielectric that is aligned with the alignment mark is provided with dummy damascene structures, assuring equal polishing rates for active damascene structures and the surface region of the layer of dielectric overlying an alignment mark.
摘要翻译：提供了一种新的方法，其影响已经沉积在电介质层的表面上的铜层的表面的抛光速率。在电介质层的表面已经形成铜镶嵌结构，电介质层也覆盖对准标记。与对准标记对准的电介质层的表面设置有虚拟镶嵌结构，确保活性镶嵌结构的相同抛光速率和覆盖对准标记的电介质层的表面区域。

9. 发明授权

US6080656A Method for forming a self-aligned copper structure with improved planarity 有权
标题翻译：用于形成具有改善的平面度的自对准铜结构的方法
公开(公告)号：US6080656A
公开(公告)日：2000-06-27
申请号：US387436
申请日：1999-09-01
申请人： Tsu Shih , Ying-Ho Chen , Jih-Churng Twu , Syun-Ming Jang
发明人： Tsu Shih , Ying-Ho Chen , Jih-Churng Twu , Syun-Ming Jang
IPC分类号： H01L21/768 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/7684 , H01L21/76879
摘要： A method for forming a copper structure with reduced dishing, using a self-aligned copper electroplating process. The process begins by providing a semiconductor structure having a dielectric layer thereover, wherein the dielectric layer has a trench therein. A barrier layer is formed over the dielectric layer, a seed layer is formed on the barrier layer, and an insulating layer is formed on the seed layer. The insulating layer is patterned so as to expose the seed layer on the bottom and sidewalls of the trench, preferably using the trench photo mask. A copper layer is selectively electroplated onto the exposed seed layer on the bottom and sidewalls of the trench, while the insulating layer prevents copper deposition outside of the trench. The copper layer, the insulating layer, and the seed layer are planarized, stopping at the dielectric layer. Because of the self-aligned copper geometry, the copper suffers reduced dishing.
摘要翻译：一种使用自对准铜电镀工艺形成具有减少凹陷的铜结构的方法。该过程开始于提供其上具有介电层的半导体结构，其中介电层在其中具有沟槽。在电介质层上形成阻挡层，在阻挡层上形成种子层，在籽晶层上形成绝缘层。图案化绝缘层，以便优选地使用沟槽光掩模来暴露沟槽的底部和侧壁上的晶种层。选择性地将铜层电镀到沟槽的底部和侧壁上的暴露种子层上，同时绝缘层防止在该沟槽外部的铜沉积。铜层，绝缘层和种子层被平坦化，停留在电介质层。由于自对准的铜几何形状，铜损坏了凹陷。

10. 发明授权

US06634930B1 Method and apparatus for preventing metal corrosion during chemical mechanical polishing 有权
标题翻译：化学机械抛光时防止金属腐蚀的方法和装置
公开(公告)号：US06634930B1
公开(公告)日：2003-10-21
申请号：US09635013
申请日：2000-08-09
申请人： Ying-Ho Chen , Wen-Chih Chiou , Tsu Shih , Syun-Ming Jang , Chia-Ming Yang
发明人： Ying-Ho Chen , Wen-Chih Chiou , Tsu Shih , Syun-Ming Jang , Chia-Ming Yang
IPC分类号： B24B100
CPC分类号： B24B37/04 , B24B57/02
摘要： A method for preventing copper corrosion on a wafer during a chemical mechanical polishing process when the process is temporarily halted due to equipment malfunction and an apparatus for carrying out such method are disclosed. In the method, after the chemical mechanical polishing process is stopped for correcting equipment malfunction or any other processing problems, a cleaning solvent is sprayed toward the wafer surface to remove substantially all slurry solution from the surface to prevent corrosion of the copper layer, or other metal layer, by the slurry solution. The cleaning solvent may be sprayed from spray nozzles mounted around and juxtaposed to the polishing table onto which the polishing pad is mounted as long as the spray nozzles do not interfere with the rotation of the polishing pad.
摘要翻译：本发明公开了一种在化学机械抛光工艺中由于设备故障暂时停止处理而在晶片上进行铜腐蚀的方法及其实施方法。在该方法中，在化学机械抛光处理停止以纠正设备故障或任何其它处理问题之后，向晶片表面喷射清洗溶剂，以从表面去除基本上所有的浆液，以防止铜层或其它金属层，通过浆料溶液。只要喷嘴不干扰抛光垫的旋转，清洁溶剂可以从安装在其周围的喷嘴喷射并且并列在抛光台上，抛光垫安装在抛光台上。

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