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    • 1. 发明专利
    • X-ray photographing method using polaroid film and its film cassette
    • 使用极性膜及其薄膜的X射线摄影方法
    • JPS59116739A
    • 1984-07-05
    • JP22954982
    • 1982-12-24
    • Takeshi Koshiba
    • KOSHIBA TAKESHI
    • A61B6/00G03B42/04G03C5/16
    • G03B42/04
    • PURPOSE:To enable the exact photographing of many calculi and the small fragments of the stone stagnating in the minor calyx of the kidney in a short time by disposing a Polaroid film cassette enclosed in a sterilized surgery cloth of PVC behind the incised internal organ and making X-ray photographing. CONSTITUTION:A Polaroid film cassette 1 is enclosed in a sterilized surgery cloth 11 of PVC, and is inserted into an incised part 2 by operation so as to be disposed behind the kidney 3. Although an exposing condition varies with the size of the object, it is set approximately at 70-80 kilovolt peak voltage in 40 milliampere seconds. After the photographing by exposure is finished, the cassette 1 is loaded into a Polaroid Land camera and a tube is pulled in accordance with an ordinary procedure, whereby the film is developed. The above-mentioned operations are all performed alongside the operating table and the time required for the photographing is within one minute.
    • 目的:为了能够在短时间内精确地拍摄许多结石和狭窄的石块,在石棺的小萼片中放置一个包围在经切割内脏的PVC灭菌手术布中的宝丽来胶片盒,并制作 X光摄影。 构成:将偏光片膜1封入PVC的无菌手术用织物11中,通过操作将其插入切口部2中,使其设置在肾脏3的后方。虽然曝光条件随物体的大小而变化, 在40毫安秒内约为70-80千伏峰值电压。 在通过曝光进行拍摄完成之后,将盒1装载到宝丽来陆相机中,并按照常规步骤拉出管,由此显影该胶片。 上述操作都与操作台一起执行,并且拍摄所需的时间在一分钟内。
    • 2. 发明申请
    • METHOD FOR FABRICATING TEMPLATE
    • 制作模板的方法
    • US20130220970A1
    • 2013-08-29
    • US13597828
    • 2012-08-29
    • Takeshi KOSHIBA
    • Takeshi KOSHIBA
    • B44C1/22
    • G03F7/0002B82Y10/00B82Y40/00
    • According to one embodiment, a method for fabricating a template, includes providing a mask pattern on a template substrate, processing the template substrate using the mask pattern as a mask so as to provide a first pattern on a first area in the template substrate and a second pattern on a second area which is located adjacent to the first area in the template, providing a first mask material on the template substrate so as to cover the first area, and processing the second area using the first mask material as a mask so as to lower a height of a surface of the second area than a height of a surface of the first area.
    • 根据一个实施例,一种制造模板的方法包括在模板衬底上提供掩模图案,使用掩模图案作为掩模处理模板衬底,以便在模板衬底的第一区域上提供第一图案,以及 在与模板中的第一区域相邻的第二区域上设置第二图案,在模板基板上提供第一掩模材料以覆盖第一区域,并且使用第一掩模材料作为掩模来处理第二区域,以便 以降低第二区域的表面的高度,而不是第一区域的表面的高度。
    • 3. 发明申请
    • PATTERN FORMATION METHOD
    • 模式形成方法
    • US20120009791A1
    • 2012-01-12
    • US13175349
    • 2011-07-01
    • Yingkang ZHANGMasafumi AsanoTakeshi Koshiba
    • Yingkang ZHANGMasafumi AsanoTakeshi Koshiba
    • H01L21/311B29C35/08
    • G03F7/0002B82Y10/00B82Y40/00
    • According to one embodiment, a pattern formation method is disclosed. The method can include filling an imprint material between a first protrusion-depression pattern of a first pattern transfer layer formed on a first replica substrate and a second pattern transfer layer being transparent to energy radiation and formed on a second replica substrate transparent to the energy radiation. The method can include curing the imprint material by irradiating the imprint material with the energy radiation from an opposite surface side of the second replica substrate. The method can include releasing the first protrusion-depression pattern from the imprint material. The method can include forming a second protrusion-depression pattern in the second pattern transfer layer by processing the second pattern transfer layer using the imprint material as a mask.
    • 根据一个实施例,公开了图案形成方法。 该方法可以包括在形成在第一复制基板上的第一图案转移层的第一突起 - 凹陷图案和对能量辐射透明的第二图案转移层之间填充压印材料,并形成在对能量辐射透明的第二复制基板上 。 该方法可以包括通过用来自第二复制基板的相对表面侧的能量辐射照射压印材料来固化压印材料。 该方法可以包括从压印材料释放第一突起 - 凹陷图案。 该方法可以包括通过使用压印材料作为掩模处理第二图案转印层来在第二图案转印层中形成第二突起凹陷图案。
    • 4. 发明授权
    • Character pattern extracting method, charged particle beam drawing method, and character pattern extracting program
    • 字符图案提取方法,带电粒子束绘制方法和字符图案提取程序
    • US07889910B2
    • 2011-02-15
    • US11797531
    • 2007-05-04
    • Tetsuro NakasugiTakumi OtaTakeshi KoshibaNoriaki Sasaki
    • Tetsuro NakasugiTakumi OtaTakeshi KoshibaNoriaki Sasaki
    • G06K9/00
    • H01J37/3174B82Y10/00B82Y40/00
    • A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.
    • 字符图案提取方法包括根据半导体器件的设计数据中的参考时间的数量来排列数量大于孔径中的最大字符图案数量的字符图案,提取数量小于最大值的第一提取图案 以大量的读取字符图案的数量以参考时间数字的降序排列,将除了较大数量的字符图案之外的第一提取模式除外的字符图案作为候选图案,从候选图案中选择多个候选图案, 数字对应于从最大数量提取的图案的数量之间的差异,以及创建所选择的候选图案的组合,以及提取包括在候选图案的组合中的组合中的第二提取图案,其中半导体器件的制造时间 最缩短。
    • 8. 发明申请
    • Character pattern extracting method, charged particle beam drawing method, and character pattern extracting program
    • 字符图案提取方法,带电粒子束绘制方法和字符图案提取程序
    • US20070263921A1
    • 2007-11-15
    • US11797531
    • 2007-05-04
    • Tetsuro NakasugiTakumi OtaTakeshi KoshibaNoriaki Sasaki
    • Tetsuro NakasugiTakumi OtaTakeshi KoshibaNoriaki Sasaki
    • G06K9/00
    • H01J37/3174B82Y10/00B82Y40/00
    • A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.
    • 字符图案提取方法包括根据半导体器件的设计数据中的参考时间的数量来排列数量大于孔径中的最大字符图案数量的字符图案,提取数量小于最大值的第一提取图案 以大量的读取字符图案的数量以参考时间数字的降序排列,将除了较大数量的字符图案之外的第一提取模式除外的字符图案作为候选图案,从候选图案中选择多个候选图案, 数字对应于从最大数量提取的图案的数量之间的差异,以及创建所选择的候选图案的组合,以及提取包括在候选图案的组合中的组合中的第二提取图案,其中半导体器件的制造时间 最缩短。