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1. 发明申请

WO2016182080A1 真空チャネルトランジスタおよびその製造方法审中-公开
标题翻译：真空通道晶体管及其制造方法
公开(公告)号：WO2016182080A1
公开(公告)日：2016-11-17
申请号：PCT/JP2016/064390
申请日：2016-05-13
申请人：国立大学法人山口大学
发明人：横川　俊哉 , 真田　篤志
IPC分类号： H01L21/28 , H01J19/02 , H01J21/10 , H01L21/336 , H01L29/786
CPC分类号： H01J19/02 , H01J21/10 , H01L21/28 , H01L29/786
摘要：窒化ガリウム－窒化アルミニウム混晶半導体を使用した真空チャネルトランジスタにおいて、電子放出の効率を向上させ、電子放出のためのしきい電圧を低下させた真空チャネルトランジスタを提供する。　ゲート電極をなす導体基板１１と、前記導体基板の上に形成された絶縁体からなる絶縁層１２と、前記絶縁層の上に形成されたソース電極１３１と、前記絶縁層の上に形成され、前記ソース電極と対向するように設けられたドレイン電極１３２とを有する。そして、前記ソース電極は、窒化ガリウム－窒化アルミニウム混晶半導体のウルツ鉱型構造の結晶からなるものであり、電子の主要な放出方向と結晶構造のｃ軸方向とのなす角度が３０度以下となるように配置されたものである。
摘要翻译：提供了使用氮化镓 - 氮化铝混合晶体半导体的真空沟道晶体管，并且其中电子发射效率提高，并且电子发射的阈值电压降低。该真空通道晶体管包括：构成栅电极的导体基板11; 绝缘层12，其形成在导体基板上并由绝缘体形成; 在绝缘层上形成的源电极131; 以及形成在绝缘层上以与源电极相对的漏电极132。源电极由具有纤锌矿结构的氮化镓 - 氮化铝混合晶体半导体的晶体形成，并且被布置成使得电子的主发射方向与晶体结构的c轴方向之间的角度为30° 或更少。

2. 发明申请

WO2008127962A3 CARBON NANOTUBE SIGNAL MODULATOR AND PHOTONIC TRANSMISSION DEVICE 审中-公开
公开(公告)号：WO2008127962A3
公开(公告)日：2008-10-23
申请号：PCT/US2008/059841
申请日：2008-04-10
申请人： COVSYSTEMS, INC. , STEVENS, Ramsey M.
发明人： STEVENS, Ramsey M.
IPC分类号： H01J21/10
摘要： The present invention contemplates a variety of methods and techniques for fabricating a carbon nanotube (CNT) signal modulator for reducing, eliminating, or enhancing the resonance interaction between photonic elements, and a photonic transmission device that may incorporate the signal modulator. The CNT signal modulator comprises a gate CNT on a substrate in a position for receiving an input photonic signal and an input modulation signal; and transmitting an output photonic signal that is reduced, eliminated, or enhanced through the selection of the input modulation signal; and an input modulation signal sender for sending the input modulation signal to the gate CNT and creating the modulated output photonic signal from the gate CNT. The photonic transmission device can contain a plurality of CNTs, each having functional antenna forms that are capable of a resonance interaction of photons between adjacent CNTs when formed as an array on a substrate. The photonic transmission device can also comprise the CNT signal modulator.

3. 发明申请

WO2005008715A3 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：WO2005008715A3
公开(公告)日：2005-07-21
申请号：PCT/IL2004000670
申请日：2004-07-22
申请人： YEDA RES & DEV , HALAHMI EREZ , NAAMAN RON
发明人： HALAHMI EREZ , NAAMAN RON
IPC分类号： C25C3/00 , G09G3/10 , H01J1/00 , H01J1/304 , H01J1/34 , H01J3/02 , H01J21/10 , H01J31/12 , H01J40/06
CPC分类号： H01J21/10 , H01J3/021
摘要： A display device (20) is presented. The display device includes an electrodes' arrangement (12) and an electrons' extractor (14). The electrodes' arrangement comprises a Cathode electrode layer (12A) having at least one Cathode electrode and an Anode electrode layer (12C) having at least one Anode electrode, the Cathode and Anode electrode layers being accommodated in a spaced-apart relationship with a gap between them. The Anode layer carries a luminescent screen assembly (22) on its surface. The electrodes arrangement is operable to create a desired electrical field between the electrodes. The electrons' extractor operates to extract electrons from at least a selected region of the Cathode electrode layer by illuminating this Cathode region with exciting illumination of a predetermined wavelength range to cause the electron emission from the illuminated Cathode region.
摘要翻译：呈现显示装置（20）。显示装置包括电极装置（12）和电子提取器（14）。电极的布置包括具有至少一个阴极电极的阴极电极层（12A）和具有至少一个阳极电极的阳极电极层（12C），阴极和阳极电极层以间隔开的方式被容纳它们之间。阳极层在其表面上携带发光屏组件（22）。电极布置可操作以在电极之间产生期望的电场。电子提取器通过用预定波长范围的激发照明照射该阴极区域，从而从阴极电极层的至少一个选定区域提取电子，以引起来自照明阴极区域的电子发射。

4. 发明申请

WO1997042645A1 FIELD EMISSION TRIODE, A DEVICE BASED THEREON, AND A METHOD FOR ITS FABRICATION 审中-公开
标题翻译：场发射三极管，基于其的器件及其制造方法
公开(公告)号：WO1997042645A1
公开(公告)日：1997-11-13
申请号：PCT/RU1997000133
申请日：1997-04-30
申请人： GIVARGIZOV, Evgeny Invievich , CHUBUN, Nikolai Nikolaevich , STEPANOVA, Alla Nikolaevna , ZHIRNOV, Viktor Vladimirovich
IPC分类号： H01J21/10
CPC分类号： H01J3/022 , H01J21/105 , H01J31/127
摘要： A field-electron-emission triode is based on silicon emitters prepared from an oriented whisker array. The whiskers were epitaxially grown on a (111) oriented single-crystalline silicon substrate by crystallization from vapor phase according to the vapor-liquid-solid mechanism. The same epitaxial process is used for preparation of columnar spacers that separate a gate (extracting) electrode from the substrate/cathode (spacers-1), and an anode from the cathode (spacers-2). Different diameters and heights of the tip emitters and of the columnar spacers are formed owing to different metal solvents that are used for initiation/localization of the oriented whisker growth. The semiconductor nature of the emitters makes it possible to use their high series resistance for uniformization of the field-electron-emission from large-area multiple-tip arrays. An additional uniformization of the emission is ensured owing to coating of the emitters with substances that decrease work function of the emitters.
摘要翻译：场电子发射三极管基于从定向晶须阵列制备的硅发射器。根据气 - 液 - 固体机理，通过从气相结晶，在（111）取向的单晶硅衬底上外延生长晶须。使用相同的外延工艺来制备从衬底/阴极（间隔物-1）分离栅极（提取）电极和从阴极（间隔物-2）分离阳极的柱状间隔物。由于用于引导/定位取向的晶须生长的不同的金属溶剂，形成尖端发射体和柱状间隔物的不同直径和高度。发射体的半导体性质使得可以使用它们的高串联电阻来均匀化来自大面积多尖端阵列的场致电子发射。通过用降低发射器的功能的物质涂覆发射器，确保了发射的额外均匀化。

5. 发明申请

WO2013076709A8 ELECTRON-EMITTING COLD CATHODE DEVICE 审中-公开
标题翻译：电子发射冷阴极设备
公开(公告)号：WO2013076709A8
公开(公告)日：2013-08-15
申请号：PCT/IB2012056745
申请日：2012-11-26
申请人： SELEX SISTEMI INTEGRATI SPA
发明人： ULISSE GIACOMO , BRUNETTI FRANCESCA , DI CARLO ALDO , RICCI FERDINANDO , GEMMA FILIPPO , FIORELLO ANNA MARIA , DISPENZA MASSIMILIANO , BUTTIGLIONE ROBERTA
IPC分类号： H01J1/304 , H01J9/02 , H01J19/24 , H01J19/38 , H01J21/10 , H01J21/20 , H01J29/04
CPC分类号： H01J19/24 , H01J1/3042 , H01J3/022 , H01J9/025 , H01J19/32 , H01J19/38 , H01J19/46 , H01J21/105 , H01J21/20
摘要： The invention concerns a device (11, 21) comprising: a cathode (14) that lies on a cathode plane and includes, in an active region (11a), one or more cathode straight -finger-shaped terminals (14b) with a main extension direction parallel to a first reference direction (z); for each cathode terminal (14b), one or more electron emitters (14c) formed on, and in ohmic contact with, said cathode terminal (14b); and a gate electrode (15) that lies on a gate plane parallel to, and spaced apart from, said cathode plane, does not overlap the cathode (14) and includes, in the active region (lla), two or more gate straight-finger-shaped terminals (15b) with a main extension direction parallel to the first reference direction (z); wherein the gate terminals (15b) are interlaced with said cathode terminal (s) (14b).
摘要翻译：本发明涉及一种装置（11,21），包括：阴极（14），其位于阴极平面上并且在有源区域（11a）中包括一个或多个具有主体的阴极直指针形端子（14b）延伸方向平行于第一参考方向（z）; 对于每个阴极端子（14b），一个或多个电子发射器（14c）与所述阴极端子（14b）形成并以欧姆接触形成; 以及位于与所述阴极平面平行且间隔开的栅极平面上的栅极电极（15）不与阴极（14）重叠，并且在有源区域（11a）中包括两个或更多个栅极直线 - 主延伸方向平行于第一参考方向（z）的指状端子（15b）; 其中所述栅极端子（15b）与所述阴极端子（14b）交错。

6. 发明申请

WO0199146A3 PROCESS FOR MANUFACTURING ELECTRON FIELD EMITTERS 审中-公开
标题翻译：制造电子场发射的方法
公开(公告)号：WO0199146A3
公开(公告)日：2003-08-21
申请号：PCT/US0119580
申请日：2001-06-19
申请人： DU PONT , BOUCHARD ROBERT JOSEPH , CHENG LAP-TAK ANDREW , LAVIN JOHN GERARD , ROACH DAVID HERBERT
发明人： BOUCHARD ROBERT JOSEPH , CHENG LAP-TAK ANDREW , LAVIN JOHN GERARD , ROACH DAVID HERBERT
IPC分类号： H01J1/00 , H01J1/02 , H01J1/14 , H01J1/304 , H01J9/02 , H01J19/24 , H01J21/10 , H01J63/06
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： This invention provides a process for manufacturing an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
摘要翻译：本发明提供了一种用于制造由诸如针状碳，针状半导体，针状金属或其混合物的针状发射物质构成的电子场发射体的方法，包括向电场发射体的表面施加力，其中力结果在去除电子场发射体的一部分，从而形成电子场发射体的新表面。

7. 发明申请

WO0141176A3 VIRTUAL CATHODE HAVING A SEGMENTED BACKING ELECTRODE 审中-公开
标题翻译：具有分离式背电极的虚拟阴极
公开(公告)号：WO0141176A3
公开(公告)日：2002-02-21
申请号：PCT/US0042096
申请日：2000-11-10
申请人： MESA VISION INC
发明人： OESS FREDERICK G
IPC分类号： H01J31/12 , H01J29/70 , G09G1/04 , G09G3/10 , H01H63/04 , H01J1/46 , H01J1/62 , H01J21/10 , H01J29/72
CPC分类号： H01J31/126
摘要： A display device comprises a face plate assembly (14), a segmented cathode subsystem having a segmented backing electrode (19) and an emitter array (20), an accelerator (52), and first and second grid elements (42,44). The face plate assembly has an electrically positive receptor (16) that causes an image to be displayed as a result of electron impingement thereon. Active segments of the segmented backing electrode and the emitter array establishing a uniform space-charge cloud of free electrons functioning as a proximity virtual cathode. The segmented backing electrode has segments and a controller to activate the segments individually. The accelerator located a first distance from the electron emitter array creating at least one virtual cathode remotely located a second distance from the accelerator. The first and second grid elements are located between the face plate assembly and the at least one remotely located virtual cathode to select electrons from the remotely located virtual cathode to impinge the electrically positive receptor.
摘要翻译：显示装置包括面板组件（14），具有分段背衬电极（19）和发射器阵列（20）的分段阴极子系统，加速器（52）以及第一和第二网格元件（42,44）。面板组件具有电积极接收器（16），其导致由于电子冲击而在其上显示图像。分段背衬电极和发射极阵列的有源段建立起用作接近虚拟阴极的自由电子的均匀空间电荷云。分段背衬电极具有段和控制器以单独地激活段。加速器距离电子发射器阵列第一距离，产生远离加速器的第二距离的至少一个虚拟阴极。第一和第二栅格元件位于面板组件和至少一个位于远处的虚拟阴极之间，以从远位置的虚拟阴极选择电子以撞击电阳性受体。

8. 发明申请

WO01031672A1 METHOD FOR CONTROLLING A STRUCTURE COMPRISING A SOURCE OF FIELD EMITTING ELECTRONS 审中-公开
标题翻译：用于控制包含场发射电子源的结构的方法
公开(公告)号：WO01031672A1
公开(公告)日：2001-05-03
申请号：PCT/FR2000/003005
申请日：2000-10-27
IPC分类号： H01J21/10 , H01J9/50 , H01J19/24 , H01J31/12
CPC分类号： H01J9/505 , Y02W30/828
摘要： The invention concerns a method for controlling a structure comprising field emitting elements. The structure comprises a cathode (1) provided with field emitting elements, an anode (2), an extraction grid (7) and a supplementary grid (14). The method comprises at least a step which consists in emitting electrons by the field emitting elements, towards the anode, and at least a regeneration phase wherein the electrons derived from the elements are not transmitted to the anode. The regeneration phase is carried out by applying on the supplementary grid (14) a potential (VB) blocking the electrons which return to the cathode. The invention is applicable to flat image display screens and to any device comprising a field emitting cathode (X-ray tube, and the like).
摘要翻译：本发明涉及一种用于控制包括场发射元件的结构的方法。该结构包括设置有场致发射元件的阴极（1），阳极（2），提取栅格（7）和辅助格栅（14）。该方法至少包括通过场发射元件向阳极发射电子的步骤，以及至少一个再生阶段，其中从元件衍生的电子不被传递到阳极。再生阶段通过在辅助栅格（14）上施加阻挡返回到阴极的电子的电势（VB）来进行。本发明可应用于平面图像显示屏和包括场发射阴极（X射线管等）的任何装置。

9. 发明申请

WO01008192A1 INSULATED-GATE ELECTRON FIELD EMISSION DEVICES AND THEIR FABRICATION PROCESSES 审中-公开
标题翻译：绝缘栅电子场发射装置及其制造工艺
公开(公告)号：WO01008192A1
公开(公告)日：2001-02-01
申请号：PCT/US2000/020144
申请日：2000-07-24
IPC分类号： H01J1/304 , H01J9/02 , H01J21/10 , H01J31/12
CPC分类号： H01J21/105 , H01J9/025
摘要： A lateral-emitter field emission device has a gate (30) that is separated by an insulating layer (40) from a vacuum- or gas-filled environment containing other elements of the device. For example, the gate may be disposed external to a microchamber (110). The insulating layer is disposed such that there is no vacuum- or gas-filled path to the gate for electrons that are emitted from a lateral emitter. The insulating layer disposed between the emitter and the gate preferably comprises a material having a dielectric constant greater than one. The insulating layer also preferably has a low secondary electron yield over the device's operative range of electron energies. For display applications, the insulating layer is preferably transparent. Emitted electrons are confined to the microchamber containing their emitter. Thus, the gate current component of the emitter current consists of displacement current only, and direct electron current from the emitter to the gate is prevented. An array of the devices comprises an array of microchamber, so that electron current from each emitter can reach only the anode in the same microchamber, even for diode devices lacking a gate electrode. A fabrication process is specially adapted for fabricating the device and arrays of such devices, including formation in situ of a vacuum microchamber.
摘要翻译：侧向发射场场发射装置具有由绝缘层（40）与包含该装置的其它元件的真空或充满气体的环境隔开的栅极（30）。例如，栅极可以设置在微室外（110）的外部。绝缘层被设置成使得从侧向发射器发射的电子没有真空或气体填充到栅极的路径。设置在发射极和栅极之间的绝缘层优选地包括具有大于1的介电常数的材料。绝缘层还优选在器件的电子能量的操作范围内具有低的二次电子产率。对于显示应用，绝缘层优选是透明的。发射电子被限制在含有发射极的微室中。因此，发射极电流的栅极电流分量仅由位移电流组成，并且防止了从发射极到栅极的直接电子电流。器件的阵列包括微阵列阵列，使得即使对于没有栅电极的二极管器件，来自每个发射极的电子电流也可以到达同一微室中的阳极。制造工艺特别适用于制造这种装置的装置和阵列，包括真空微室的原位形成。

10. 发明申请

WO00055880A1 ELECTRON-EMITTING DEVICE AND IMAGE DISPLAY DEVICE USING ELECTRON-EMITTING DEVICE 审中-公开
标题翻译：电子发射装置和使用电子发射装置的图像显示装置
公开(公告)号：WO00055880A1
公开(公告)日：2000-09-21
申请号：PCT/JP2000/001620
申请日：2000-03-16
IPC分类号： H01J3/02 , H01J21/10 , H01J31/12 , H01J1/304 , H01J29/04
CPC分类号： H01J21/105 , H01J3/022 , H01J31/127
摘要： A field-emission device is designed for finely controlled reliable electron emission from a cathode with decreased voltage applied to a grid. An electric field formed between a grid (3) and an anode and extending through an opening in the grid (3) toward the cathode (2) interacts with an electric field existing between the cathode (2) and the grid (3) to produce a compound electric field. The device comprises electron emission control means for varying the potential at any of the cathode (2), the anode and the grid (3) electrode to control the intensity of the compound electric field.
摘要翻译：场致发射器件设计用于从施加到电网的电压降低的阴极进行精细控制的可靠的电子发射。在栅极（3）和阳极之间形成并且延伸通过网格（3）中的开口朝向阴极（2）的电场与存在于阴极（2）和栅极（3）之间的电场相互作用，以产生复合电场。该装置包括用于改变任何阴极（2），阳极和栅格（3）电极处的电位的电子发射控制装置，以控制复合电场的强度。

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