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1. 发明申请

WO1992015406A1 DEVICES FROM AND METHOD FOR PRODUCING CRYSTALLOGRAPHIC BOUNDARY JUNCTIONS IN SUPERCONDUCTING THIN FILMS 审中-公开
标题翻译：在超薄膜中制造晶体间界面结构的装置和方法
公开(公告)号：WO1992015406A1
公开(公告)日：1992-09-17
申请号：PCT/US1992001444
申请日：1992-02-24
申请人： SUPERCONDUCTOR TECHNOLOGIES, INC.
发明人： SUPERCONDUCTOR TECHNOLOGIES, INC. , JAMES, Timothy, Walton , FLEMING, Julia, Sophia
IPC分类号： B05D05/12
CPC分类号： H01L39/225 , H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/728 , Y10S505/732
摘要： Devices from and a method for generating repeatable and reproducible crystallographic grain-boundary junctions are provided by forming a film on a crystalline substrate which has intersecting faces. In a preferred embodiment, a single crystal substrate (10) is etched by an anisotropic etchant to provide a ''V''-groove in one face, and an epitaxial superconducting film (16) is grown on the faces (14) of the V-groove. In another preferred embodiment, a step is etched with an anisotropic etch, and an epitaxial superconducting film grown on the step. Grain-boundary junctions are formed at the points (20) of intersection of the faces with each other, or with the faces (18) and the surface of the substrate. The film may be patterned and etched in the area of the boundary junction to form useful devices. One useful device is a SQUID formed with the boundary junction at the bottom of a V-groove. Another useful device is serially connected junctions.
摘要翻译：通过在具有相交面的晶体衬底上形成膜来提供用于产生可重复和可再现的结晶晶界结的装置和方法。在优选实施例中，通过各向异性蚀刻剂对单晶衬底（10）进行蚀刻，以在一个面中提供“V”形槽，并且外延超导膜（16）生长在 V形槽。在另一优选实施例中，通过各向异性蚀刻蚀刻步骤，并在该步骤上生长外延超导膜。在面彼此相交的点（20）处，或者与面（18）和衬底的表面相交的点（20）处形成晶界结。该膜可以在边界结的区域中被图案化和蚀刻以形成有用的装置。一个有用的装置是在V形槽的底部形成边界结的SQUID。另一个有用的装置是串联的连接点。

2. 发明申请

WO1992006923A1 METHOD OF MAKING SUPERCONDUCTIVE FILM 审中-公开
标题翻译：制造超薄膜的方法
公开(公告)号：WO1992006923A1
公开(公告)日：1992-04-30
申请号：PCT/JP1991001423
申请日：1991-10-17
申请人： FUJITSU LIMITED , TANAKA, Atsushi , KAMEHARA, Nobuo , NIWA, Koichi
发明人： FUJITSU LIMITED
IPC分类号： C01G29/00
CPC分类号： C23C14/5806 , C23C14/087 , C23C14/58 , C23C14/5853 , H01L39/2451 , Y10S505/728 , Y10S505/73 , Y10S505/731 , Y10S505/742
摘要： A method of making a Bi-family perovskite type superconductive film comprising such processes that: a film of Pb-containing Bi-family material containing Bi, Pb, Sr, Ca, and Cu in the molar ratio of (1.9 to 2.1):(1.2 to 2.3, preferably, 1.5 to 1.8):2:(1.9 to 2.2):(3 to 3.5) is formed on a substrate, and then baked for 20 to 120 min in an oxygen-containing atmosphere with a temperature rise of 3 to 10 °C, preferably 3 to 5 °C until a final temperature of 850 to 860 °C, preferably 852 to 855 °C, is attained.

3. 发明申请

WO1992008336A1 ETCHING OF NANOSCALE STRUCTURES ON HIGH TEMPERATURE SUPERCONDUCTORS 审中-公开
标题翻译：高温超导体纳米结构的蚀刻
公开(公告)号：WO1992008336A1
公开(公告)日：1992-05-14
申请号：PCT/US1991008068
申请日：1991-10-29
申请人： E.I. DU PONT DE NEMOURS AND COMPANY
发明人： E.I. DU PONT DE NEMOURS AND COMPANY , HARMER, Mark, Andrew , PARKINSON, Bruce, Alan
IPC分类号： H05K03/08
CPC分类号： B82Y15/00 , H01L39/2467 , Y10S505/701 , Y10S505/702 , Y10S505/728 , Y10S977/856
摘要： A process for etching with a scanning tunneling microscope on both a single crystal and a thin film of high temperature superconductor is disclosed.

4. 发明申请

WO1989001053A1 A METHOD FOR FABRICATING CERAMIC SUPERCONDUCTORS 审中-公开
标题翻译：陶瓷超导体的制造方法
公开(公告)号：WO1989001053A1
公开(公告)日：1989-02-09
申请号：PCT/US1988002336
申请日：1988-07-15
申请人： OLIN CORPORATION
发明人： OLIN CORPORATION , ASHOK, Sankaranarayanan , GUENIN, Bruce, M.
IPC分类号： C22C29/12
CPC分类号： H01L39/248 , C04B35/4504 , C04B35/65 , H01L39/2419 , H01L39/2422 , H01L39/2467 , Y10S505/728 , Y10S505/736 , Y10S505/74
摘要： A method for fabricating a ceramic superconductor comprising the following steps: mixing a copper or copper alloy metal, a first metal oxide or carbonate which includes one element selected from group IIA of the Chemical Periodic Table, and a second metal oxide or carbonate which includes one element selected from group IIIB of the Chemical Periodic Table to form a copper/ceramic mixture, heating a copper/ceramic mixture to a temperature in the range between 900-1100°C, and cooling the heated copper/ceramic mixture slowly, thereby forming a superconductive material. The copper/ceramic mixture may be extruded through a die prior to the heating step, thereby forming a superconductor of desired shape.

5. 发明申请

WO2008057611A9 METHOD OF PATTERNING OXIDE SUPERCONDUCTING FILMS 审中-公开
标题翻译：氧化物超导膜的方法
公开(公告)号：WO2008057611A9
公开(公告)日：2008-07-24
申请号：PCT/US2007060333
申请日：2007-01-10
申请人： AMERICAN SUPERCONDUCTOR CORP , KODENKANDATH THOMAS , ZHANG WEI
发明人： KODENKANDATH THOMAS , ZHANG WEI
IPC分类号： H01L39/24 , H01L39/14
CPC分类号： H01L39/24 , H01L39/143 , H01L39/2425 , H01L39/2451 , H01L39/2464 , H01L39/248 , H01P11/00 , Y10S505/728 , Y10S505/93 , Y10T29/49014
摘要： A process for preparing a superconductor article includes depositing a precursor solution onto a substrate to form a precursor film, the precursor solution comprising precursor components to a rare earth-alkaline earth metal-transition metal oxide in one or more solvents, decomposing the precursor film to form an intermediate film comprising the rare earth metal, the alkaline earth metal, and the transition metal of the first precursor solution, selectively removing portions of the intermediate film, wherein a patterned intermediate film is obtained, and treating the patterned intermediate film to form a rare earth-alkaline earth metal-transition metal oxide superconductor.
摘要翻译：制备超导体制品的方法包括将前体溶液沉积到基底上以形成前体膜，所述前体溶液在一种或多种溶剂中包含前体成分至稀土 - 碱土金属 - 过渡金属氧化物，将前体膜分解成形成包含第一前体溶液的稀土金属，碱土金属和过渡金属的中间膜，选择性地除去中间膜的部分，其中获得图案化的中间膜，并处理图案化的中间膜以形成稀土 - 碱土金属 - 过渡金属氧化物超导体。

6. 发明申请

WO2008057611A2 METHOD OF PATTERNING OXIDE SUPERCONDUCTING FILMS 审中-公开
标题翻译：图案化氧化物超导膜的方法
公开(公告)号：WO2008057611A2
公开(公告)日：2008-05-15
申请号：PCT/US2007/060333
申请日：2007-01-10
申请人： AMERICAN SUPERCONDUCTOR CORPORATION , KODENKANDATH, Thomas , ZHANG, Wei
发明人： KODENKANDATH, Thomas , ZHANG, Wei
IPC分类号： H01L39/24 , H01L39/14
CPC分类号： H01L39/24 , H01L39/143 , H01L39/2425 , H01L39/2451 , H01L39/2464 , H01L39/248 , H01P11/00 , Y10S505/728 , Y10S505/93 , Y10T29/49014
摘要： A process for preparing a superconductor article includes depositing a precursor solution onto a substrate to form a precursor film, the precursor solution comprising precursor components to a rare earth-alkaline earth metal-transition metal oxide in one or more solvents, decomposing the precursor film to form an intermediate film comprising the rare earth metal, the alkaline earth metal, and the transition metal of the first precursor solution, selectively removing portions of the intermediate film, wherein a patterned intermediate film is obtained, and treating the patterned intermediate film to form a rare earth-alkaline earth metal-transition metal oxide superconductor.
摘要翻译：用于制备超导体制品的方法包括将前体溶液沉积到基材上以形成前体膜，所述前体溶液包含在一种或多种溶剂中的稀土 - 碱土金属 - 过渡金属氧化物的前体组分，将所述前体膜分解成形成包含稀土金属，碱土金属和第一前体溶液的过渡金属的中间膜，选择性地除去部分中间膜，其中获得图案化的中间膜，并且处理图案化的中间膜以形成稀土 - 碱土金属 - 过渡金属氧化物超导体。

7. 发明申请

WO98033665A1 FORMATION OF SUPERCONDUCTING DEVICES USING A SELECTIVE ETCHING TECHNIQUE 审中-公开
标题翻译：使用选择性蚀刻技术形成超导体器件
公开(公告)号：WO98033665A1
公开(公告)日：1998-08-06
申请号：PCT/US1998/001093
申请日：1998-01-21
IPC分类号： H01L39/24 , B44C1/22
CPC分类号： H01L39/2496 , H01L39/2467 , Y10S505/728 , Y10S977/72 , Y10S977/832
摘要： A method for forming a superconducting device (232) using a selective etching technique on superconducting thin films. The method utilizes rapid etching which combines ion implantation with chemical etching. The portions of the superconducting film to be retained are masked (215) from the ion implantation process (217). The chemical etching process then removes the implanted portions (225, 227) of the superconducting film at a much faster rate than the portions (223) not implanted so that only the un-implanted portions (223) remain. The resulting superconducting devices can be used, e.g., as nanostructures and nano tips, bolometers, multilayer RF coils, microwave waveguides and filters.
摘要翻译：一种使用超导薄膜上的选择性蚀刻技术形成超导器件（232）的方法。该方法利用快速蚀刻，其结合离子注入与化学蚀刻。将要保留的超导膜的部分从离子注入工艺（217）掩蔽（215）。然后，化学蚀刻工艺以比没有植入的部分（223）快得多的速度去除超导膜的注入部分（225,227），使得仅留下未注入部分（223）。所得到的超导装置可以用作例如纳米结构和纳米尖端，测辐射热计，多层RF线圈，微波波导和滤波器。

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