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1. 发明申请

WO2015051589A1 开关装置审中-公开
公开(公告)号：WO2015051589A1
公开(公告)日：2015-04-16
申请号：PCT/CN2014/000800
申请日：2014-08-27
申请人：东林科技股份有限公司 , 林铭锋
发明人：林铭锋
IPC分类号： H03K17/00
CPC分类号： H03K17/732 , H03K17/615
摘要：一种开关装置（1、2、3），其包括一第一开关元件与一自锁电路（10、20）。该第一开关元件的第一端电性连接一电源，第二端电性连接一负载；该自锁电路（10、20）包含有相互电性连接的一第一晶体管（Q1）与一第二晶体管（Q2），该第一晶体管（Q1）电性连接该第一开关元件的第一端，该第二晶体管（Q2）电性连接至该第一开关元件的控制端；其中，施加一触发电压（V1）至该第二晶体管（Q2）后，该第二晶体管（Q2）与该第一开关元件导通，促使该第一晶体管（Q1）导通；且该第一晶体管（Q1）导通后，该第一晶体管（Q1）供电予该第二晶体管（Q2）以形成自锁，使该第一开关元件维持导通。

2. 发明申请

WO2013071842A1 一种应用于功率因数校正器中的高压大电流驱动电路审中-公开
公开(公告)号：WO2013071842A1
公开(公告)日：2013-05-23
申请号：PCT/CN2012/084379
申请日：2012-11-09
申请人：无锡华润上华科技有限公司
发明人：代国定 , 陈跃 , 马晓辉 , 韩辉 , 马任月
IPC分类号： H02M1/08 , H03K17/687
CPC分类号： H02M1/4208 , H02M1/08 , H02M1/12 , H02M1/38 , H02M1/42 , H02M1/44 , H03K17/0412 , H03K17/162 , H03K17/615 , H03K17/687 , H03K17/6877 , H03K2217/0081 , Y02B70/12 , Y02P80/112
摘要：一种应用于功率因数校正器中的高压大电流驱动电路，包括电流镜像电路（1）、电平移位电路（3）、高压预调制电路（2）、死区时间控制电路（4）和大电流输出级（5）。大电流输出级采用了达林顿输出级结构，以提高驱动电路的最高工作频率。驱动电路利用稳压二极管的击穿稳压特性，保证驱动电路工作在一个安全的电压范围内。在电平移位电路中加入死区时间控制，不仅可以防止在电平转换期间存在的电源到地的瞬间大电流现象，而且可以减少驱动电路的静态功耗。

3. 发明申请

WO1997010432A1 FINAL IGNITION STAGE 审中-公开
标题翻译：点火
公开(公告)号：WO1997010432A1
公开(公告)日：1997-03-20
申请号：PCT/DE1996001140
申请日：1996-06-27
申请人： ROBERT BOSCH GMBH , MEINDERS, Horst , SCHLEUPEN, Richard
发明人： ROBERT BOSCH GMBH
IPC分类号： F02P03/055
CPC分类号： H03K17/615 , F02P3/0435 , F02P3/0453 , F02P3/051 , F02P3/0552 , F02P9/002 , F02P15/10 , H03K17/04213
摘要： The description relates to a final ignition stage (1), especially for internal combustion engines, in which the final stage consists of two or three-stage Darlington circuits (T1, T2) and, for overvoltage protection, has either an internal single-stage or an external multi-stage clamp via a Zener diode (Z1), where a short-circuit transistor (T3) is fitted on the drive terminal (B) of the Darlington circuit in parallel to the base-emitter line of the ignition Darlington circuit (T1, T2) for protection against parasitic currents.
摘要翻译：这是一个点火输出级（1），特别是对所描述的内燃机，其中所述输出级被构造和保护免受过电压或者有内部步骤或外部的多级括号（经由一个齐纳二极管Z1两或三阶段达林顿（T1，T2）提供），其中，用于针对所述达林顿的驱动端子（B）（平行于ZünddarlingtonT1，T2）的基极发射极通路上的寄生电流保护是短路晶体管（T3）被设置。

4. 发明申请

WO2012085677A1 COMPLEMENTARY DARLINGTON EMITTER FOLLOWER WITH IMPROVED SWITCHING SPEED AND IMPROVED CROSS-OVER CONTROL AND INCREASED OUTPUT VOLTAGE 审中-公开
标题翻译：具有改进的切换速度和改进的交叉控制和增加的输出电压的补充达林顿发动机
公开(公告)号：WO2012085677A1
公开(公告)日：2012-06-28
申请号：PCT/IB2011/003282
申请日：2011-12-19
申请人： DIODES ZETEX SEMICONDUCTORS LIMITED , CASEY, David, Neil
发明人： CASEY, David, Neil
IPC分类号： H01L27/082 , H03F3/343 , H03K17/04 , H01L29/10 , H01L29/66
CPC分类号： C12M21/02 , C12M27/20 , C12M29/06 , C12M31/08 , H01L27/0823 , H01L29/1004 , H01L29/66272 , H01L2924/0002 , H03F3/3435 , H03K17/04113 , H03K17/615 , H01L2924/00
摘要： In one embodiment, an apparatus includes a first transistor where the base of the first transistor is coupled to an input node. A second transistor is provided where the emitter of the first transistor is coupled to the base of the second transistor and the emitter of the second transistor is coupled to an output node. A third transistor is provided where the base of the third transistor is coupled to the input node. A fourth transistor is provided where the emitter of the third transistor is coupled to the base of the fourth transistor and the emitter of the fourth transistor is coupled to the output node and the base of the second transistor is coupled to the base of the fourth transistor. The base of the second transistor is coupled to the base of the fourth transistor through a shorting link.
摘要翻译：在一个实施例中，一种装置包括第一晶体管，其中第一晶体管的基极耦合到输入节点。提供第二晶体管，其中第一晶体管的发射极耦合到第二晶体管的基极，并且第二晶体管的发射极耦合到输出节点。提供第三晶体管，其中第三晶体管的基极耦合到输入节点。提供第四晶体管，其中第三晶体管的发射极耦合到第四晶体管的基极，并且第四晶体管的发射极耦合到输出节点，并且第二晶体管的基极耦合到第四晶体管的基极。第二晶体管的基极通过短路链路耦合到第四晶体管的基极。

5. 发明申请

WO2012085676A1 REDUCTION OF STORED CHARGE IN THE BASE REGION OF A BIPOLAR TRANSISTOR TO IMPROVE SWITCHING SPEED 审中-公开
标题翻译：在双极晶体管的基底区域减少存储电荷以提高开关速度
公开(公告)号：WO2012085676A1
公开(公告)日：2012-06-28
申请号：PCT/IB2011/003278
申请日：2011-12-19
申请人： DIODES ZETEX SEMICONDUCTORS LIMITED , CASEY, David, Neil
发明人： CASEY, David, Neil
IPC分类号： H01L29/10 , H01L29/66 , H01L27/082
CPC分类号： C12M21/02 , C12M27/20 , C12M29/06 , C12M31/08 , H01L27/0823 , H01L29/1004 , H01L29/66272 , H01L2924/0002 , H03F3/3435 , H03K17/04113 , H03K17/615 , H01L2924/00
摘要： In one embodiment, a method includes forming a base region for a transistor using a base mask and forming a contact region to the base region. The contact region is formed in an area that is at least partially outside of the base mask. The method then forms an emitter region in a diffused base region. The base region diffuses outwardly to be formed under the contact region.
摘要翻译：在一个实施例中，一种方法包括使用基底掩模形成晶体管的基极区域并形成与基极区域的接触区域。接触区域形成在至少部分在基底掩模外部的区域中。该方法然后在漫射基区中形成发射极区。基部区域向外扩散以形成在接触区域下方。

6. 发明申请

WO2006124450A1 OPTICALLY TRIGGERED WIDE BANDGAP BIPOLAR POWER SWITCHING DEVICES AND CIRCUITS 审中-公开
标题翻译：光触发宽带双极电力开关器件和电路
公开(公告)号：WO2006124450A1
公开(公告)日：2006-11-23
申请号：PCT/US2006/018068
申请日：2006-05-10
申请人： CREE, INC. , AGARWAL, Anant K. , KRISHNASWAMI, Sumithra , RICHMOND, James, T., Jr.
发明人： AGARWAL, Anant K. , KRISHNASWAMI, Sumithra , RICHMOND, James, T., Jr.
IPC分类号： H03K17/79 , H01L27/144
CPC分类号： H01L29/66068 , H01L21/8213 , H01L27/0825 , H01L29/1608 , H01L31/028 , H01L31/0304 , H01L31/11 , H01L31/1113 , H01L31/167 , H03K17/615 , H03K17/79 , H03K17/7955 , Y10T307/773
摘要： An electronic circuit includes a primarly wide bandgap bipolar power switching device configured to supply a load current in response to a control signal applied to a control terminal thereof, and a driver device configured to generate the control signal. At least one of the primary switching device or the driver device may include an optically triggered switching device. A discrete wide bandgap semiconductor device includes a primary bipolar device stage configured to switch between a conducting state and a nonconducting state upon application of a control current, and a bipolar driver stage configured to generate the control current and to supply the control current to the primary bipolar device stage. At least one of the primary bipolar device stage and the bipolar driver stage may include an optically triggered wide bandgap switching device.
摘要翻译：电子电路包括主要宽带隙双极型功率开关装置，其被配置为响应于施加到其控制端的控制信号而提供负载电流;以及驱动器装置，被配置为产生控制信号。主开关装置或驱动器装置中的至少一个可以包括光学触发的开关装置。分立的宽带隙半导体器件包括主要双极器件级，其被配置为在施加控制电流时在导通状态和非导通状态之间切换;双极性驱动器级，被配置为产生控制电流并将控制电流提供给初级双极器件阶段。主要双极器件级和双极驱动器级中的至少一个可以包括光学触发的宽带隙开关器件。

7. 发明申请

WO1992005635A1 DARLINGTON CIRCUIT WITH MEANS FOR DETECTING A BROKEN CONDUCTOR IN ITS LOAD CIRCUIT 审中-公开
标题翻译：具有检测其负载电路中的断路器的手段的DARLINGTON电路
公开(公告)号：WO1992005635A1
公开(公告)日：1992-04-02
申请号：PCT/DE1991000666
申请日：1991-08-21
申请人： ROBERT BOSCH GMBH , MICHEL, Hartmut
发明人： ROBERT BOSCH GMBH
IPC分类号： H03K17/615
CPC分类号： H03K17/615 , H03K17/18
摘要： The proposal is for a Darlington circuit (10-12) in which a resistor is fitted in parallel to the base-emitter path of the output transistor (12) of said circuit (10-12) to detect a conductor breakage in its load circuit. In addition there are switching means (17) controllable by the dropping voltage at the resistor (16) which, when said voltage falls to below a predetermined value, can shift to a second switching position indicating a conductor breakage. Thus it is possible with certainty to detect a conductor breakage without a measuring resistor in the load circuit and with only a few simple and cheap components.

8. 发明申请

WO1987003153A1 DRIVE CIRCUIT FOR FAST SWITCHING OF DARLINGTON-CONNECTED TRANSISTORS 审中-公开
标题翻译：用于快速切换DARLINGTON连接晶体管的驱动电路
公开(公告)号：WO1987003153A1
公开(公告)日：1987-05-21
申请号：PCT/US1986002428
申请日：1986-11-10
申请人： SUNDSTRAND CORPORATION
发明人： SUNDSTRAND CORPORATION , SHEKHAWAT, Sampat, S. , DHYANCHAND, P., John
IPC分类号： H03K17/60
CPC分类号： H03K17/615 , H03K17/04126
摘要： Prior circuits for rapidly switching Darlington-connected transistors between on and off states have accomplished relatively fast switching by applying reverse base drive to the transistors to quickly sweep the excess carriers therefrom. However, such circuits have not accomplished the required degree of reduction of turn off time and have induced localized ''hot spots'' in the base-collector junctions of the transistors. In order to overcome these problems, a drive circuit (26) according to the present invention includes first (40) and second (48) power sources of first and second polarities, a turn-on network (38) coupled between the first power source (40) and the control electrode of a driver transistor (Q4) of a Darlington-connected pair (Q4-Q6) for selectively turning on the transistor pair, turn-off capacitors (C4, C5, C6) coupled between the turn-on network (38) and the control electrodes of each of the transistors (Q4-Q6) and a turn-off network (46) coupled between the capacitors (C4-C6) and the second power source (48) for coupling the second power source (48) to the capacitors (C4-C6) to rapidly turn off the transistors (Q4-Q6). Means (C2, C3) are included for providing a dwell interval between operation of the turn-on network (38) and operation of the turn-off network (46) to allow recombination of excess carriers in the transistors (Q4-Q6) to minimize the incidence of localized hot spots.
摘要翻译：用于在导通和截止状态之间快速切换达林顿连接的晶体管的现有电路通过对晶体管施加反向基极驱动来快速扫描多余的载流子而实现了相对快速的切换。然而，这种电路没有实现所需的关断时间的降低程度，并且在晶体管的基极 - 集电极结中引起局部“热点”。为了克服这些问题，根据本发明的驱动电路（26）包括第一和第二极性的第一（40）和第二（48）电源，连接在第一电源（40）和用于选择性地导通晶体管对的达林顿连接对（Q4-Q6）的驱动晶体管（Q4）的控制电极，关闭电容器（C4，C5，C6）网络（38）和每个晶体管（Q4-Q6）的控制电极和耦合在电容器（C4-C6）和第二电源（48）之间的关断网络（46），用于将第二电源（48）连接到电容器（C4-C6）以快速关断晶体管（Q4-Q6）。包括装置（C2，C3），用于在开启网络（38）的操作和关断网络（46）的操作之间提供驻留间隔，以允许将晶体管（Q4-Q6）中的过量载流子复合到尽量减少局部热点的发生。

9. 发明申请

WO1985005231A1 SHORT DETECTION CIRCUIT AND METHOD FOR AN ELECTRICAL LOAD 审中-公开
标题翻译：短路检测电路及电气负载方法
公开(公告)号：WO1985005231A1
公开(公告)日：1985-11-21
申请号：PCT/US1985000421
申请日：1985-03-15
申请人： MOTOROLA, INC.
发明人： MOTOROLA, INC. , GRAY, Randall, C. , JARRETT, Robert, B.
IPC分类号： H02H07/06
CPC分类号： H03K17/0826 , H03K17/615
摘要： A short detection circuit (10) and method for operatively controlling current (Io) in an electrical load such as an alternator field coil includes a driving device such as a Darlington transistor (16) for driving the electrical load. Detecting means selectively withhold and provide operating current to the driving means when a shorted and not shorted condition of the electrical load is respectively detected at the driven terminal (50) of the driving device.

10. 发明申请

WO2012085666A1 MONOLITHIC DARLINGTON WITH INTERMEDIATE BASE CONTACT 审中-公开
标题翻译：具有中间联系的单声道DARLINGTON
公开(公告)号：WO2012085666A1
公开(公告)日：2012-06-28
申请号：PCT/IB2011/003237
申请日：2011-12-19
申请人： DIODES ZETEX SEMICONDUCTORS LIMITED , CASEY, David, Neil
发明人： CASEY, David, Neil
IPC分类号： H01L27/082 , H03F3/343 , H03K17/04 , H01L29/10 , H01L29/66
CPC分类号： C12M21/02 , C12M27/20 , C12M29/06 , C12M31/08 , H01L27/0823 , H01L29/1004 , H01L29/66272 , H01L2924/0002 , H03F3/3435 , H03K17/04113 , H03K17/615 , H01L2924/00
摘要： In one embodiment, a method includes forming a first pad for coupling to a first terminal of a first transistor of a monolithic darlington transistor configuration and forming a second pad for coupling to a first terminal of a second transistor of the monolithic darlington transistor configuration. The method then forms a third pad for coupling to an external component for the monolithic darlington transistor configuration. The third pad is coupled to a second terminal of the first transistor and a second terminal of the second transistor of the monolithic darlington transistor configuration.
摘要翻译：在一个实施例中，一种方法包括形成用于耦合到单片达林顿晶体管配置的第一晶体管的第一端子的第一焊盘，并形成用于耦合到单片达林顿晶体管配置的第二晶体管的第一端子的第二焊盘。该方法然后形成用于耦合到用于单片达林顿晶体管配置的外部部件的第三焊盘。第三焊盘耦合到第一晶体管的第二端子和单片达林顿晶体管配置的第二晶体管的第二端子。

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