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1. 发明申请

WO2009042363A3 FACETED CERAMIC FIBERS, TAPES OR RIBBONS AND EPITAXIAL DEVICES THEREFROM 审中-公开
标题翻译：表面陶瓷纤维，胶带或胶带及其外观设备
公开(公告)号：WO2009042363A3
公开(公告)日：2009-05-14
申请号：PCT/US2008075244
申请日：2008-09-04
申请人： UT BATTELLE LLC , GOYAL AMIT
发明人： GOYAL AMIT
IPC分类号： C30B15/24 , C30B15/34 , C30B23/00 , C30B25/18 , C30B29/16 , C30B29/22 , C30B29/60 , C30B29/62 , H01L39/24
CPC分类号： H01L39/2461 , C30B15/34 , C30B29/16 , C30B29/20 , C30B29/24 , C30B29/32 , C30B29/607 , C30B29/64 , H01L21/0242 , H01L21/02436 , H01L21/02521 , H01L39/2458 , Y10S505/701 , Y10S505/704 , Y10T428/2924 , Y10T428/2958 , Y10T428/2964 , Y10T428/2973
摘要： A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallo graphic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A- plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.
摘要翻译：结晶制品包括单晶陶瓷纤维，带或带。纤维，胶带或丝带沿其长度具有至少一个结晶图形刻面，其通常至少一米长。在蓝宝石的情况下，刻面是R平面，M平面，C平面或A-平面。可以在纤维，带或带上形成包括超导物品在内的外延制品。

2. 发明申请

WO0105726A2 METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7- delta HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES 审中-公开
标题翻译：用于改善表面光滑度，晶体结构和微波表面电阻的方法，该方法是在CeO2缓冲的r-CUT SAPPHIRE基板上形成的YBa2Cu3O7-δ高温超导体膜
公开(公告)号：WO0105726A2
公开(公告)日：2001-01-25
申请号：PCT/KR0000778
申请日：2000-07-18
申请人： LEE SANG YOUNG
发明人： LEE SANG YOUNG
IPC分类号： H01L21/86 , C30B33/00 , H01L39/24 , C04B
CPC分类号： H01L39/2458 , C30B29/22 , C30B29/225 , C30B33/00
摘要： The invention comprises post-annealing of CeO2-buffered r-cut sapphire substrate at a temperature range of 960 - 1050 DEG C and growing high temperature superconductor YBa2Cu3O7- delta films on the post-annealed CeO2-buffered r-cut sapphire substrate.
摘要翻译：本发明包括在960-1050℃的温度范围内对CeO 2缓冲的r-切割蓝宝石衬底进行后退火，并在退火后的CeO 2缓冲的r-切割蓝宝石衬底上生长高温超导体YBa2Cu3O7-δ膜。

3. 发明申请

WO9850965A9 METHOD FOR PREPARATION OF SUBSTRATES FOR THIN FILM SUPERCONDUCTORS AND IMPROVED DEVICES INCORPORATING SUBSTRATES 审中-公开
标题翻译：薄膜超导体基板的制备方法和改良基板的装置
公开(公告)号：WO9850965A9
公开(公告)日：1999-03-25
申请号：PCT/US9807579
申请日：1998-04-15
申请人： SUPERCONDUCTOR TECH
发明人： EDDY MICHAEL M , ZUCK BETTY F , FIRPO GREGORY G
IPC分类号： H01L39/24
CPC分类号： H01L39/2458
摘要： Improved reproducibility of fabrication of superconducting thin film devices on MgO substrates is accomplished through use of the inventive procedure. As a first step of the process, the surface of the MgO is removed. Preferably, the surface is removed through argon plasma bombardment, whether with low energy or high energy ions. Most preferably, ion milling is utilized, with superior results being obtained by milling at 90 DEG to the surface of the substrate. The second step of the invention is to anneal the MgO substrate. This effects recrystallization of the substrate. In the preferred embodiment, the substrate is annealed at approximately 1050 DEG C in 17 % dry oxygen, 83 % dry nitrogen for 2.5 hours. Lower temperatures, such as 950 DEG C, may be utilized, though the anneal times, e.g., three hours or greater, impacts upon the commercial viability of the process. Higher temperatures, e.g., 1150 DEG C, permit steps in the surface to become unacceptably large, and often permit second phases to migrate to the surface of the substrate. Varying other factors, such as the oxygen partial pressure, change the optimal anneal temperature. Structurally, the resultant surface manifests steps or terraces, which comprise exposed peripheral edges of atomic planes within the substrate. Optionally, additional cleanings steps are performed. Devices fabricated from filling formed with the inventive method result in higher quality and more uniform devices.
摘要翻译：通过使用本发明的方法来实现在MgO衬底上制造超导薄膜器件的改进的再现性。作为该方法的第一步，除去MgO的表面。优选地，无论是用低能量还是高能离子，通过氩等离子体轰击去除表面。最优选地，使用离子研磨，通过在90°下研磨到基材的表面获得优异的结果。本发明的第二步骤是使MgO基板退火。这会影响底物的再结晶。在优选的实施方案中，将基材在约1050℃下在17％干燥氧气，83％干燥氮气中退火2.5小时。尽管退火时间（例如三小时或更长）也会影响工艺的商业可行性，但可以使用较低的温度，例如950℃。更高的温度，例如1150℃，允许表面中的步骤变得不可接受地大，并且通常允许第二相迁移到基底的表面。改变其他因素，如氧分压，改变最佳退火温度。在结构上，所得到的表面表现出步骤或梯田，其包括在基底内的原子平面的暴露的外围边缘。可选地，执行额外的清洁步骤。由本发明方法形成的填充物制成的装置导致更高质量和更均匀的装置。

4. 发明申请

WO9723896A3 LAYER SEQUENCE WITH AT LEAST ONE EPITAXIAL, NON-C-AXIS ORIENTED HTSC THIN FILM OR WITH A LAYER OF A STRUCTURE CRYSTALLOGRAPHICALLY COMPARABLE TO HTSC 审中-公开
标题翻译：具有至少一个外部片层，非C轴方向的HTSC薄膜或具有与HTSC可比较的结构的结构层的层序列
公开(公告)号：WO9723896A3
公开(公告)日：1997-08-28
申请号：PCT/DE9602475
申请日：1996-12-18
申请人： FORSCHUNGSZENTRUM JUELICH GMBH , DIVIN YURI , SEO JIN WON , POPPE ULRICH
发明人： DIVIN YURI , SEO JIN-WON , POPPE ULRICH
IPC分类号： C30B29/22 , H01L39/02 , H01L39/24 , H01L39/22
CPC分类号： H01L39/2458 , Y10S428/93 , Y10S505/701
摘要： The invention relates to a layer sequence with at least one epitaxial, non-c-axis oriented high-temperature superconductor (HTSC) thin film with a virtually tetragonal structure, in which a cubic or pseudo-cubic substrate is bonded to said thin film. Here, the thin film has an orientation (K01) in relation to the film surface and here K (K=-K) assumes a value from the range K = 1, 2, ... .
摘要翻译： PCT No.PCT / DE96 / 02475 Sec。 371日期：1998年6月22日 102（e）1998年6月22日PCT 1996年12月18日PCT PCT。公开号WO97 / 23896 日期1997年7月3日本发明涉及具有至少一个具有近似四方结构的外延非c轴取向的高Tc超导体（HTSC）薄膜的分层结构，其中薄膜具有取向（-1， 0,1）形成在立方体或假立方（1,0,3）NdGaO 3衬底上。

5. 发明申请

WO1990004857A1 EPITAXIAL Ba-Y-Cu-O SUPERCONDUCTOR FILM 审中-公开
标题翻译：外延Ba-Y-Cu-O超导体膜
公开(公告)号：WO1990004857A1
公开(公告)日：1990-05-03
申请号：PCT/US1989004226
申请日：1989-09-27
申请人： ALLIED-SIGNAL INC.
发明人： ALLIED-SIGNAL INC. , CHAI, Bruce, Huai-Tzu
IPC分类号： H01L39/24
CPC分类号： C30B29/225 , C30B7/00 , C30B15/00 , C30B23/02 , C30B29/22 , H01L39/2458 , Y10S428/93
摘要： Superconducting structure are composed of thin film of Ba-Y-Cu-O superconductor epitaxially deposited on a crystal substrate of SrLaAlO, SrLaGaO4, SrPrGaO4, SrNdGaO4, SrSmGaO4, SrEuGaO4, CaLaGaO4, CaPrGaO4, or CaNdGaO4.

6. 发明申请

WO2015054119A1 COATED CONDUCTOR HIGH TEMPERATURE SUPERCONDUCTORS WITH INTRINSIC PINNING CENTERS 审中-公开
标题翻译：涂层导体高温超导体，内置密封中心
公开(公告)号：WO2015054119A1
公开(公告)日：2015-04-16
申请号：PCT/US2014/059279
申请日：2014-10-06
申请人： SUPERCONDUCTOR TECHNOLOGIES, INC.
发明人： HUH, Jeong-Uk
IPC分类号： H01L39/24
CPC分类号： H01B12/06 , H01L39/126 , H01L39/143 , H01L39/2432 , H01L39/2458 , H01L39/2461
摘要： A coated conductor comprises a substrate supporting a ReBCO superconductor adapted to carry current in a superconducting state. The superconductor is characterized in having peaks in critical current (J c ) of at least 0.2 MA/cm 2 in a magnetic field of about 1 Tesla when the field is applied normal to the surface of the superconductor and when the field is applied parallel to the surface of the superconductor, and further characterized in that the superconductor includes horizontal defects and columnar defects in a size and an amount sufficient to result in the said critical current response. The conductor is characterized in that the ratio of the height of the peaks in the J c is in the range from 3:1 with the ratio of the field perpendicular (0 degrees) to the field parallel (+/- 90 degrees) to the range from 3:1 with the ratio of the field parallel to the field perpendicular.
摘要翻译：涂覆导体包括支撑适于承载超导状态的电流的ReBCO超导体的衬底。超导体的特征在于当场施加到超导体的表面时以及平行于表面施加场时，在约1特斯拉的磁场中，临界电流（Jc）的峰值为至少0.2MA / cm 2 的超导体，其特征还在于，超导体包括足以导致所述临界电流响应的尺寸和量的水平缺陷和柱状缺陷。导体的特征在于，Jc中的峰的高度的比例在3:1的范围内，场的垂直（0度）与场平行（+/- 90度）的比率与范围从3：1，场平均与场垂直的比率。

7. 发明申请

WO2009042363A2 FACETED CERAMIC FIBERS, TAPES OR RIBBONS AND EPITAXIAL DEVICES THEREFROM 审中-公开
标题翻译：成形的陶瓷纤维，胶带或带子及其外延装置
公开(公告)号：WO2009042363A2
公开(公告)日：2009-04-02
申请号：PCT/US2008/075244
申请日：2008-09-04
申请人： UT-BATTELLE, LLC , GOYAL, Amit
发明人： GOYAL, Amit
IPC分类号： B32B9/00 , C30B15/00 , H01L39/24 , C04B35/01
CPC分类号： H01L39/2461 , C30B15/34 , C30B29/16 , C30B29/20 , C30B29/24 , C30B29/32 , C30B29/607 , C30B29/64 , H01L21/0242 , H01L21/02436 , H01L21/02521 , H01L39/2458 , Y10S505/701 , Y10S505/704 , Y10T428/2924 , Y10T428/2958 , Y10T428/2964 , Y10T428/2973
摘要： A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallo graphic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A- plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.
摘要翻译：结晶制品包括单晶陶瓷纤维，带或带。纤维，带或带沿其长度上至少具有一个晶体图形面，其通常至少一米长。在蓝宝石的情况下，刻面是R平面，M平面，C平面或A平面刻面。外延制品，包括超导制品，可以形成在纤维，带或带上。

8. 发明申请

WO01005726A3 METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7- delta HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES 审中-公开
标题翻译：用于改善表面光滑度，晶体结构和微波表面电阻的方法，该方法是在CeO2缓冲的r-CUT SAPPHIRE基板上形成的YBa2Cu3O7-δ高温超导体膜
公开(公告)号：WO01005726A3
公开(公告)日：2002-03-28
申请号：PCT/KR2000/000778
申请日：2000-07-18
IPC分类号： H01L21/86 , C30B33/00 , H01L39/24
CPC分类号： H01L39/2458 , C30B29/22 , C30B29/225 , C30B33/00
摘要： The invention comprises post-annealing of CeO2-buffered r-cut sapphire substrate at a temperature range of 960 - 1050 DEG C and growing high temperature superconductor YBa2Cu3O7- delta films on the post-annealed CeO2-buffered r-cut sapphire substrate.
摘要翻译：本发明包括在960-1050℃的温度范围内对CeO 2缓冲的r-切割蓝宝石衬底进行后退火，并在退火后的CeO 2缓冲的r-切割蓝宝石衬底上生长高温超导体YBa2Cu3O7-δ膜。

9. 发明申请

WO1991005087A1 SINGLE CRYSTAL OXIDE SUBSTRATE, SUPERCONDUCTOR DEVICE PRODUCED THEREFROM, AND PRODUCING THEREOF 审中-公开
标题翻译：单晶氧化物基板，其制造的超导体器件及其制造
公开(公告)号：WO1991005087A1
公开(公告)日：1991-04-18
申请号：PCT/JP1990001238
申请日：1990-09-26
申请人： KABUSHIKI KAISHA KOMATSU SEISAKUSHO , NAKAMURA, Kozo;
发明人： KABUSHIKI KAISHA KOMATSU SEISAKUSHO
IPC分类号： C30B23/08
CPC分类号： C30B29/225 , C30B15/00 , C30B23/02 , C30B25/02 , C30B29/22 , H01L39/2458 , Y10S428/93 , Y10S505/701 , Y10S505/729 , Y10S505/741
摘要： A single crystal oxide substrate, which has a K2NiF4 type crystal structure, has the compsn; Srl-x Nd l-y Gal-z 04-w where x, y and z are - 0.1 to 0.1, and w is 0.2 to 0.2. A superconductor device comprises the Sr-Nd-Ga oxide single crystal substrate and a superconductor thin film formed on it. The superconductor device is produced by (i) prepg the Sr-Nd-Ga oxide single crystal and (ii) forming on it a superconductor thin film having lattice consts (a= 3.76 - 3.92 Angstroms, b = 5.32 - 5.54 Angstroms). The superconductor thin film has the compsn LnBa2Cu307-delta (where delta = 0 1, Ln = Yb, Et, Y, Ho, Gd, Eu or Dy). The superconductor thin film can also be a Bi-Sr-Ca-Cu-0 type or a Ti-Ba-Ca-Cu-0 type oxide thin film. Another single crystal oxide substrate can be produced by adding to a cpd having a K2 Ni F4 type crystal structure and an Srl-x Gal-z 04-w compsn, Ca (the mole ratio Ca/Sr = 0.00001-0.1), La(the mole ratio La/Nd = 0.00001-0.1) and/or Cr (the mole ratio Cr/Ga = 0.00001-0.1).

10. 发明申请

WO1990001809A1 EPITAXIAL Ba-Y-Cu-O SUPERCONDUCTOR FILM ON PEROVSKITE STRUCTURE SUBSTRATE 审中-公开
标题翻译：外延型Ba-Y-Cu-O超导体薄膜结构基片
公开(公告)号：WO1990001809A1
公开(公告)日：1990-02-22
申请号：PCT/US1989003235
申请日：1989-07-26
申请人： ALLIED-SIGNAL INC.
发明人： ALLIED-SIGNAL INC. , CHAI, Bruce, Huai-Tzu
IPC分类号： H01L39/24
CPC分类号： H01L39/2458 , Y10S428/91 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting Ba-Y-Cu-O ceramic thin film is epitaxially deposited on a crystal substrate of LaAlO3, LaGaO3, PrGaO3 and NdGaO3.

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