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    • 2. 发明申请
    • ESC COOLING BASE FOR LARGE DIAMETER SUBSTRATES
    • 用于大直径基板的ESC冷却基座
    • WO2013162938A1
    • 2013-10-31
    • PCT/US2013036659
    • 2013-04-15
    • APPLIED MATERIALS INC
    • TAVASSOLI HAMIDBERA KALLOLBUCHBERGER DOUGLASCARDUCCI JAMES CRAUF SHAHIDCOLLINS KENNETH
    • H01L21/683H01L21/3065
    • B01J15/00B23C3/13B23K15/0006H01L21/67109H01L21/6831Y10T409/303752
    • Embodiments include a base for an electrostatic chuck (ESC) assembly for supporting a workpiece during a manufacturing operation in a processing chamber, such as a plasma etch, clean, deposition system, or the like. Inner and outer fluid conduits are disposed in the base to conduct a heat transfer fluid. In embodiments, a counter-flow conduit configuration provides improved temperature uniformity. The conduit segments in each zone are interlaced so that fluid flows are in opposite directions in radially adjacent segments. In embodiments, each separate fluid conduit formed in the base comprises a channel formed in the base with a cap e-beam welded to a recessed lip of the channel to make a sealed conduit. To further improve the thermal uniformity, a compact, tri-fold channel segment is employed in each of the outer fluid loops. In further embodiments, the base includes a multi-contact fitting RF and DC connection, and thermal breaks.
    • 实施例包括用于在诸如等离子体蚀刻,清洁,沉积系统等的处理室中的制造操作期间用于支撑工件的静电卡盘(ESC)组件的基座。 内部和外部流体管道设置在基座中以传导传热流体。 在实施例中,逆流导管配置提供改善的温度均匀性。 每个区域中的导管段是交错的,使得流体在径向相邻段中沿相反方向流动。 在实施例中,形成在基座中的每个单独的流体导管包括形成在基座中的通道,其中帽电子束焊接到通道的凹口以形成密封导管。 为了进一步提高热均匀性,在每个外部流体回路中采用紧凑的三重通道段。 在另外的实施例中,底座包括多接头配件RF和DC连接以及热断裂。
    • 9. 发明申请
    • METHOD AND APPARATUS FOR MEASUREMENT OF CVD EXHAUST DEPOSITS
    • CVD排除沉积物的测量方法和装置
    • WO98055667A1
    • 1998-12-10
    • PCT/US1998/010572
    • 1998-05-21
    • B01J15/00B01J19/00C23C16/44B01J3/02
    • C23C16/4412B01J15/00B01J19/0006
    • A method and system for quantifying the amount of byproduct buildup in the reaction chamber and support systems used to fabricate semiconductor device layers is disclosed. One embodiment of the present invention places a film thickness measuring device in an exhaust pipe (150) of a reactor (100). The film thickness measuring device is positioned such that the operating parameters, for example temperature, of that particular device are optimized. The thickness of the exhaust byproduct buildup is then measured using the film thickness measuring device. Once the amount of byproduct buildup is quantified at the location of the film thickness measuring device then the byproduct buildup at other locations in the system be determined.
    • 公开了一种用于量化用于制造半导体器件层的反应室和支撑系统中的副产物积累量的方法和系统。 本发明的一个实施例将膜厚测量装置放置在反应器(100)的排气管(150)中。 膜厚测量装置被定位成使得该特定装置的操作参数,例如温度被优化。 然后使用膜厚测量装置测量排气副产物积累的厚度。 一旦在膜厚测量装置的位置量化了副产物积累的量,则确定系统中其他位置处的副产物积累。