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1. 发明申请

WO2011044108A1 NANO WIRE BASED PASSIVE PIXEL IMAGE SENSOR 审中-公开
标题翻译： NANO WIRE BASED被动像素图像传感器
公开(公告)号：WO2011044108A1
公开(公告)日：2011-04-14
申请号：PCT/US2010/051446
申请日：2010-10-05
申请人： ZENA TECHNOLOGIES, INC. , WOBER, Munib , YU, Young-June
发明人： WOBER, Munib , YU, Young-June
IPC分类号： H01J40/14
CPC分类号： H01L27/14607 , H01L27/1461 , H01L27/14612 , H01L27/14643
摘要： An imaging device including a plurality of photo-sensitive elements suitable for imaging small objects less than 500nm in size. Each of the photo-sentive elements forms a passive pixel which comprises at least one nanowire structured photodetector and a switch transistor. The nanowire structured photodetector is configured to receive the photons and store the photo generated charges and behave as a waveguide. The switch transistor is formed either in the substrate or at the same body of the nanowire and is configured to allow photo-genereated charges in the nanowire to accumulate when off and to drain from the nanowire when on. The pixel array is configured to allow high resolution imaging by arranging in a penny round pattern.
摘要翻译：一种成像装置，包括适合于成像尺寸小于500nm的小物体的多个光敏元件。每个光敏元件形成无源像素，其包括至少一个纳米线结构的光电检测器和开关晶体管。纳米线结构光电检测器被配置为接收光子并存储光产生的电荷并且表现为波导。开关晶体管形成在衬底中或在纳米线的同一体上，并且被配置为允许纳米线中的光致发光电荷在关闭时积聚，并且在开启时从纳米线排出。像素阵列被配置为通过以一分钱圆形图案布置来允许高分辨率成像。

2. 发明申请

WO2012094047A2 LIGHT ABSORPTION AND FILTERING PROPERTIES OF VERTICALLY ORIENTED SEMICONDUCTOR NANO WIRES 审中-公开
标题翻译：垂直取向半导体纳米线的光吸收和滤光性能
公开(公告)号：WO2012094047A2
公开(公告)日：2012-07-12
申请号：PCT/US2011/057325
申请日：2011-10-21
申请人： ZENA TECHNOLOGIES, INC. , PRESIDENT AND FELLOWS OF HARVARD COLLEGE , SEO, Kwanyong , WOBER, Munib , STEINVURZEL, Paul , SCHONBRUN, Ethan , DAN, Yaping , CROZIER, Kenneth, B.
发明人： SEO, Kwanyong , WOBER, Munib , STEINVURZEL, Paul , SCHONBRUN, Ethan , DAN, Yaping , CROZIER, Kenneth, B.
IPC分类号： G01J1/42 , G01J3/51 , G02B5/22 , F21K99/00 , B32B5/08 , C23F1/00 , B05D1/32 , B05D5/00 , B82Y15/00 , B82Y40/00 , B82Y20/00
CPC分类号： H01L27/14607 , B82Y20/00 , B82Y30/00 , B82Y40/00 , B82Y99/00 , F21V9/08 , G02B5/22 , G09F13/00 , H01L27/1446 , H01L27/14603 , H01L27/14629 , H01L27/14692 , H01L31/035227 , H01L31/107 , H01L31/18 , Y10S977/762 , Y10S977/888 , Y10S977/954 , Y10T428/24174 , Y10T428/24893
摘要： A nanowire array is described herein. The nanowire array comprises a substrate and a plurality of nanowires extending essentially vertically from the substrate; wherein: each of the nanowires has uniform chemical along its entire length; a refractive index of the nanowires is at least two times of a refractive index of a cladding of the nanowires. This nanowire array is useful as a photodetector, a submicron color filter, a static color display or a dynamic color display.
摘要翻译：这里描述了纳米线阵列。纳米线阵列包括基底和从基底基本上垂直延伸的多个纳米线; 其中：每个纳米线沿其整个长度均匀化学化学; 纳米线的折射率是纳米线的包层的折射率的至少两倍。该纳米线阵列可用作光电检测器，亚微米滤色器，静态彩色显示器或动态彩色显示器。

3. 发明申请

WO2012065048A1 VERTICAL PILLAR STRUCTURED PHOTOVOLTAIC DEVICES WITH MIRRORS AND OPTICAL CLADDINGS 审中-公开
标题翻译：垂直立柱结构光电器件与镜面和光学遮盖
公开(公告)号：WO2012065048A1
公开(公告)日：2012-05-18
申请号：PCT/US2011/060348
申请日：2011-11-11
申请人： ZENA TECHNOLOGIES, INC. , YU, Young-June , WOBER, Munib
发明人： YU, Young-June , WOBER, Munib
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/03529 , H01L31/056 , H01L31/068 , H01L31/075 , H01L31/103 , H01L31/105 , Y02E10/52 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.
摘要翻译：一种可操作以将光转换成电的光电器件，包括基底，基本上垂直于基底的多个结构，在所述结构之间的一个或多个凹槽，每个凹部在其底壁上具有平面镜。该结构具有用于将光转换成电的p-n或p-i-n结。平面镜用作电极并且可以将入射到其上的光反射回到要转换成电的结构。

4. 发明申请

WO2010028195A1 OPTICAL WAVEGUIDES IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的光学波形
公开(公告)号：WO2010028195A1
公开(公告)日：2010-03-11
申请号：PCT/US2009/055963
申请日：2009-09-04
申请人： ZENA TECHNOLOGIES, INC. , WOBER, Munib
发明人： WOBER, Munib
IPC分类号： G02B6/02
CPC分类号： G02B6/421 , G02B6/4204
摘要： An embodiment relates to an image sensor comprising (a) a optical pipe comprising a core and a cladding, and (b) a pair of photosensitive elements comprising a central photosensitive element and a peripheral photosensitive element, wherein the central photosensitive element is operably coupled to the core and the peripheral photosensitive element is operably coupled to the cladding, and methods of fabricating and using the same. The image sensor could further comprise a lens structure or an optical coupler or an optical coupler over the optical pipe, wherein the lens structure or the optical coupler or the optical coupler is operably coupled to the optical pipe.
摘要翻译：一个实施例涉及一种图像传感器，其包括：（a）包括芯和包层的光学管，以及（b）一对感光元件，包括中央感光元件和周边光敏元件，其中中央感光元件可操作地耦合到芯和周边光敏元件可操作地耦合到包层，以及制造和使用它们的方法。图像传感器还可以包括在光学管上的透镜结构或光耦合器或光耦合器，其中透镜结构或光耦合器或光耦合器可操作地耦合到光管。

5. 发明申请

WO2012088076A1 VERTICALLY STRUCTURED PASSIVE PIXEL ARRAYS AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：垂直结构被动像素阵列及其制作方法
公开(公告)号：WO2012088076A1
公开(公告)日：2012-06-28
申请号：PCT/US2011/066097
申请日：2011-12-20
申请人： ZENA TECHNOLOGIES, INC. , YU, Yong-june , DUANE, Peter , WOBER, Munib
发明人： YU, Yong-june , DUANE, Peter , WOBER, Munib
IPC分类号： H04N3/14
CPC分类号： H01L31/035227 , H01L27/14607 , H01L27/14643 , H01L31/105 , H01L31/109
摘要： An image sensor and methods of use the image sensor, methods of manufacturing the image sensor, and apparatuses comprising the image sensor are disclosed. The image sensor has pixels includes at least one nanopillar with a gate electrode surrounding the at least one nanopillar, wherein the at least one nanopillar is adapted to convert light impinging thereon to electrical signals and the gate electrode is operable to pinch off or allow current flow through the at least one nanopillar. The image sensor can have a plurality of pixels arranged in an individually addressable fashion. The at least one nanopillar has a cladding. A refractive index of the cladding being smaller than a refractive index of the nanopillar.
摘要翻译：公开了一种图像传感器和图像传感器的使用方法，图像传感器的制造方法以及包括图像传感器的装置。图像传感器具有像素，包括至少一个纳米柱，其具有围绕至少一个纳米柱的栅电极，其中所述至少一个纳米柱适于将入射到其上的光转换成电信号，并且栅电极可操作地夹紧或允许电流通过至少一个纳米柱。图像传感器可以具有以可单独寻址的方式布置的多个像素。至少一个纳米柱具有包层。包层的折射率小于纳米柱的折射率。

6. 发明申请

WO2011072030A1 NANOWIRE STRUCTURED PHOTODIODE WITH A SURROUNDING EPITAXIALLY GROWN P OR N LAYER 审中-公开
标题翻译：纳米结构的光电子体与周边的外延生长的P或N层
公开(公告)号：WO2011072030A1
公开(公告)日：2011-06-16
申请号：PCT/US2010/059496
申请日：2010-12-08
申请人： ZENA TECHNOLOGIES, INC. , YU, Young-June , WOBER, Munib
发明人： YU, Young-June , WOBER, Munib
IPC分类号： G02B6/26
CPC分类号： H01L31/02325 , H01L27/14607 , H01L27/1461 , H01L27/14625 , H01L31/035227 , H01L31/035281 , H01L31/03529 , H01L31/103 , H01L31/109 , Y02E10/50
摘要： An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.
摘要翻译：一个实施例涉及一种包括衬底，纳米线和围绕纳米线的掺杂外延层的器件，其中纳米线被配置为既是透射波长到选择波长的通道，又是有源元件，以检测直到选择性波长通过纳米线传输。另一个实施例涉及一种包括衬底，纳米线和围绕纳米线的一个或多个光栅的器件，其中纳米线被配置为既是透射波长到选择波长的通道，也包括有源元件，以检测直到透射通过纳米线的选择性波长，并且其中所述一个或多个摄像机包括外延层。

7. 发明申请

WO2010138406A1 DETERMINATION OF OPTIMAL DIAMETERS FOR NANOWIRES 审中-公开
标题翻译：确定纳米级的最佳直径
公开(公告)号：WO2010138406A1
公开(公告)日：2010-12-02
申请号：PCT/US2010/035726
申请日：2010-05-21
申请人： ZENA TECHNOLOGIES, INC. , WOBER, Munib
发明人： WOBER, Munib
IPC分类号： G01B11/14
CPC分类号： H01L22/20 , G01B11/08 , G01J3/28 , G01J3/465 , G01J3/513 , G01J2003/1213 , H01L27/14607 , H01L27/14645 , H01L27/14683
摘要： Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire photodiode light sensors with optimized nanowire diameters and methods of scene reconstruction.
摘要翻译：优化纳米线光电二极管光传感器直径的方法。该方法包括比较具有预定直径的纳米线光电二极管像素与标准光谱响应曲线的响应，并确定光电二极管像素的光谱响应与标准光谱响应曲线之间的差异。还包括具有优化的纳米线直径和场景重建方法的纳米线光电二极管光传感器。

8. 发明申请

WO2012092417A1 NANO WIRE ARRAY BASED SOLAR ENERGY HARVESTING DEVICE 审中-公开
标题翻译：纳米线阵基太阳能采收装置
公开(公告)号：WO2012092417A1
公开(公告)日：2012-07-05
申请号：PCT/US2011/067712
申请日：2011-12-29
申请人： ZENA TECHNOLOGIES, INC. , YU, Young-June , WOBER, Munib , DUANE, Peter
发明人： YU, Young-June , WOBER, Munib , DUANE, Peter
IPC分类号： H01L31/00
CPC分类号： H01L31/035281 , H01L27/1446 , H01L31/02327 , H01L31/03529 , H01L31/0475 , H01L31/0547 , H01L31/056 , H01L31/18 , Y02E10/52
摘要： A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof and each recess filled with a transparent material. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.
摘要翻译：可操作以将光转换成电的光电器件，包括基底，基本上垂直于基底的多个结构，在所述结构之间的一个或多个凹槽，每个凹部在其底壁上具有平面镜，每个凹部填充有透明材料。该结构具有用于将光转换成电的p-n或p-i-n结。平面镜用作电极并且可以将入射到其上的光反射回到要转换成电的结构。

9. 发明申请

WO2012082734A1 FULL COLOR SINGLE PIXEL INCLUDING DOUBLET OR QUADRUPLET SI NANOWIRES FOR IMAGE SENSORS 审中-公开
标题翻译：全彩色单像素，包括双页或四分之一像素图像传感器
公开(公告)号：WO2012082734A1
公开(公告)日：2012-06-21
申请号：PCT/US2011/064635
申请日：2011-12-13
申请人： ZENA TECHNOLOGIES, INC. , WOBER, Munib
发明人： WOBER, Munib
IPC分类号： H01L31/062
CPC分类号： H01L31/035227 , B82Y15/00 , B82Y20/00 , B82Y30/00 , G02B6/107 , G02B6/4298 , H01L27/14601 , H01L27/14607 , Y10S977/954
摘要： An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different color. The nanowires are functional to covert light of the colors they are sensitive to into electrical signals.
摘要翻译：一种图像传感器，包括基板和其上的一个或多个像素。像素在其中具有子像素，其中包含对不同颜色的光敏感的纳米线。纳米线用于将其敏感的颜色的光转换成电信号。

10. 发明申请

WO2011063119A1 NANOWIRE CORE-SHELL LIGHT PIPES 审中-公开
标题翻译： NANOWIRE核心灯管
公开(公告)号：WO2011063119A1
公开(公告)日：2011-05-26
申请号：PCT/US2010/057227
申请日：2010-11-18
申请人： ZENA TECHNOLOGIES, INC. , PRESIDENT AND FELLOWS OF HARVARD COLLEGE , DAN, Yaping , WOBER, Munib , CROZIER, Kenneth, B.
发明人： DAN, Yaping , WOBER, Munib , CROZIER, Kenneth, B.
IPC分类号： H03K3/35
CPC分类号： H01L31/035227 , H01L27/14629 , H01L31/103
摘要： Embodiments relate to methods and devices comprising an optical pipe comprising a core and a cladding. An embodiment includes obtaining a substrate comprising a photodiode and a first protective layer, the first protective layer having a predetermined thickness and growing a nanowire having a length L on the photodiode, wherein the length L is greater than the predetermined thickness of the protective layer. Another embodiment includes (1) obtaining a substrate comprising a photodiode and a protective layer, (2) fabricating a nanowire light pipe on the photodiode, the light pipe comprising a nanowire core and a cladding; and (3) coating the substrate and the nanowire light pipe with a protective coating.
摘要翻译：实施例涉及包括包括芯和包层的光管的方法和装置。实施例包括获得包括光电二极管和第一保护层的衬底，第一保护层具有预定厚度并且在光电二极管上生长长度为L的纳米线，其中长度L大于保护层的预定厚度。另一个实施例包括（1）获得包括光电二极管和保护层的衬底，（2）在光电二极管上制造纳米线光管，所述光管包括纳米线芯和包层; 和（3）用保护涂层涂覆基板和纳米线光管。

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