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1. 发明申请

WO2011159578A2 METHODS OF FABRICATING OPTOELECTRONIC DEVICES USING SEMICONDUCTOR-PARTICLE MONOLAYERS AND DEVICES MADE THEREBY 审中-公开
标题翻译：使用半导体颗粒单体制造光电器件的方法及其制造方法
公开(公告)号：WO2011159578A2
公开(公告)日：2011-12-22
申请号：PCT/US2011/040048
申请日：2011-06-10
申请人： VERSATILIS LLC , JAIN, Ajaykumar, R.
发明人： JAIN, Ajaykumar, R.
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L33/52 , B82Y20/00 , H01L21/0237 , H01L21/0243 , H01L21/02532 , H01L21/0254 , H01L21/02546 , H01L21/02557 , H01L21/0256 , H01L21/02601 , H01L21/02664 , H01L31/0203 , H01L31/035236 , H01L31/0384 , H01L31/0392 , H01L31/072 , H01L31/18 , H01L31/1804 , H01L31/1864 , H01L31/1872 , H01L31/1892 , H01L31/1896 , H01L33/0066 , H01L33/18 , H01L33/32 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating optoelectronic devices, such as photovoltaic cells and light-emitting devices. In one embodiment, such a method includes providing a substrate, applying a monolayer of semiconductor particles to the substrate, and encasing the monolayer with one or more coatings so as to form an encased-particle layer. At some point during the method, the substrate is removed so as to expose the reverse side of the encased-particle layer and further processing is performed on the reverse side. When a device made using such a method has been completed and installed into an electrical circuit the semiconductor particles actively participate in the photoelectric effect or generation of light, depending on the type of device.
摘要翻译：制造光电器件如光伏电池和发光器件的方法。在一个实施例中，这种方法包括提供衬底，向衬底施加单层半导体颗粒，以及用一个或多个涂层包围单层以便形成包封颗粒层。在该方法中的某个时刻，去除衬底以暴露包封颗粒层的相反侧，并在反面进行进一步的处理。当使用这种方法制造的装置已经完成并安装到电路中时，根据装置的类型，半导体颗粒主动参与光电效应或光的产生。

2. 发明申请

WO2012138414A1 OPTOELECTRONIC DEVICE CONTAINING AT LEAST ONE ACTIVE DEVICE LAYER HAVING A WURTZITE CRYSTAL STRUCTURE, AND METHODS OF MAKING SAME 审中-公开
标题翻译：包含至少一个具有钨酸盐晶体结构的有源器件层的光电装置及其制造方法
公开(公告)号：WO2012138414A1
公开(公告)日：2012-10-11
申请号：PCT/US2012/024399
申请日：2012-02-09
申请人： VERSATILIS LLC , JAIN, Ajaykumar, R.
发明人： JAIN, Ajaykumar, R.
IPC分类号： H01L21/20
CPC分类号： H01S5/347 , B82Y20/00 , H01L21/0237 , H01L21/024 , H01L21/02417 , H01L21/02521 , H01L21/02551 , H01L21/02557 , H01L21/02568 , H01L31/02325 , H01L31/0296 , H01L31/032 , H01L31/0324 , H01L31/035236 , H01L31/036 , H01L33/005 , H01L33/0079 , H01L33/0083 , H01L33/0087 , H01L33/06 , H01L33/18 , H01L33/26 , H01L33/28 , H01L33/32 , H01L33/46 , H01S5/0206 , H01S5/0217 , H01S5/0425 , H01S5/125 , H01S5/183 , H01S5/187 , H01S5/3202 , H01S5/327
摘要： Optoelectronic devices, such as light-emitting diodes, laser diodes, image sensors, optical detectors, etc., made by depositing (growing) one or more epitaxial semiconductor layers on a monocrystalline lamellar/layered substrate so that each layer has a wurtzite crystal structure. In some embodiments, the layers are deposited and then one or more lamellas of the starting substrate are removed from the rest of the substrate. In one subset of such embodiments, the removed lamella(s) is/are partially or entirely removed. In other embodiments, one or more lamellas of the starting substrate are removed prior to depositing the one or more wurtzite-crystal-structure-containing layer(s).
摘要翻译：通过在单晶层状/层状衬底上沉积（生长）一个或多个外延半导体层而制成的光电子器件，例如发光二极管，激光二极管，图像传感器，光学检测器等，使得每层具有纤锌矿晶体结构。在一些实施例中，沉积这些层，然后将起始衬底的一个或多个层从衬底的其余部分移除。在这种实施例的一个子集中，所移除的薄片被部分地或完全地去除。在其它实施方案中，在沉积一种或多种含纤锌矿结晶结构的层之前，除去起始衬底的一个或多个薄片。

3. 发明申请

WO2012033551A1 METHODS OF FABRICATING OPTOELECTRONIC DEVICES USING LAYERS DETACHED FROM SEMICONDUCTOR DONORS AND DEVICES MADE THEREBY 审中-公开
标题翻译：使用从半导体激励器和器件分离的层制造光电器件的方法
公开(公告)号：WO2012033551A1
公开(公告)日：2012-03-15
申请号：PCT/US2011/029190
申请日：2011-03-21
申请人： VERSATILIS LLC , JAIN, Ajaykumar, R.
发明人： JAIN, Ajaykumar, R.
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L51/502 , H01L21/02521 , H01L21/02568 , H01L33/0041 , H01L33/005 , H01L33/0079 , H01L33/06 , H01L33/08 , H01L51/5036 , H01L2924/0002 , H01L2924/00
摘要： Methods of making optoelectronic devices containing functional elements made from layers liberated from natural and/or fabricated lamellar semiconductor donors. In one embodiment, a donor is provided, a layer is detached from the donor, and the layer is incorporated into an optoelectronic device as a functional element thereof. The thickness of the detached layer is tuned as needed to suit the functionality of the functional element. Examples of functional elements that can be made using detached layers include p-n junctions, Schotkey junctions, PIN junctions, and confinement layers, among others. Examples of optoelectronic devices that can incorporate detached layers include LEDs, laser diodes, MOSFET transistors, and MISFET transistors, among others.
摘要翻译：制造含有由从天然和/或制造的层状半导体供体释放的层制成的功能元件的光电子器件的方法。在一个实施方案中，提供供体，将一层与供体分离，并将该层作为其功能元件结合到光电子器件中。根据需要调整分离层的厚度以适应功能元件的功能。可以使用分离层制成的功能元件的实例包括p-n结，Schotkey结，PIN结和限制层等。可以结合分离层的光电子器件的实例包括LED，激光二极管，MOSFET晶体管和MISFET晶体管等。

4. 发明申请

WO2007118081A3 MANUFACTURING DEVICES USING A DONEE LAYER CLEAVED FROM A CRYSTALLINE DONOR 审中-公开
公开(公告)号：WO2007118081A3
公开(公告)日：2007-10-18
申请号：PCT/US2007/065864
申请日：2007-04-03
申请人： VERSATILIS LLC , JAIN, Ajaykumar, R.
发明人： JAIN, Ajaykumar, R.
IPC分类号： G03G7/00
摘要： Various embodiments of fabricated crystalline-based structures for the electronics, optoelectronics and optics industries are disclosed. Each of these structures is created in part by cleaving a donee layer from a crystalline donor, such as a micaceous/lamellar mass comprising a plurality of lamelliform sheets separable from each other along relatively weak cleavage planes. Once cleaved, one or more of these lamelliform sheets become the donee layer. The donee layer may be used for a variety of purposes, including a crystalline layer for supporting heteroepitaxial growth of one or more semiconductor layers thereon, an insulating layer, a barrier layer, a planarizing layer and a platform for creating useful structures, among others.

5. 发明申请

WO2008137264A1 METHODS OF MAKING SEMICONDUCTOR-BASED ELECTRONIC DEVICES ON A WIRE AND ARTICLES THAT CAN BE MADE THEREBY 审中-公开
标题翻译：在线上制作基于半导体的电子设备的方法和可以制作的文章
公开(公告)号：WO2008137264A1
公开(公告)日：2008-11-13
申请号：PCT/US2008/060483
申请日：2008-04-16
申请人： VERSATILIS LLC , JAIN, Ajaykumar, R.
发明人： JAIN, Ajaykumar, R.
IPC分类号： H01L21/60 , H01L29/786
CPC分类号： H01L29/78642 , H01L21/6835 , H01L29/66795 , H01L2924/0002 , H01L2924/13055 , H01L2924/13063 , H01L2924/13091 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , Y10T29/49002 , H01L2924/00
摘要： Strands of active electronic devices (AEDs), such as field-effect transistors, are made by processing a semiconductor substrate so that it yields a number of elongate semiconductor members liberated from the starting substrate. The elongate semiconductor members are secured to wires or wire-like structures so as to form semiconductor-member-on-a-wire composites upon which the AEDs are formed using various deposition and etching techniques. The AED strands have many uses, including the creating of electronic components, including flexible, conformal, rigid and foldable electronics, such as displays and sensors.
摘要翻译：通过处理半导体衬底来制造诸如场效应晶体管的有源电子器件（AED）的串，使得其产生从起始衬底释放的多个细长半导体构件。细长半导体部件被固定到导线或线状结构上，以形成半导体元件在线复合材料上，其中使用各种沉积和蚀刻技术形成AED。 AED线具有许多用途，包括创建电子元件，包括柔性，保形，刚性和可折叠的电子元件，如显示器和传感器。

6. 发明申请

WO2010085304A2 METHODS OF ENHANCING PERFORMANCE OF FIELD-EFFECT TRANSISTORS AND FIELD-EFFECT TRANSISTORS MADE THEREBY 审中-公开
标题翻译：提高场效应晶体管性能的方法及其效应晶体管
公开(公告)号：WO2010085304A2
公开(公告)日：2010-07-29
申请号：PCT/US2009/068992
申请日：2009-12-21
申请人： VERSATILIS LLC , JAIN, Ajaykumar, R.
发明人： JAIN, Ajaykumar, R.
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/78696 , H01L29/1054 , H01L29/66568 , H01L29/78 , H01L51/0566
摘要： Methods of enhancing the performance of a field-effect transistor (FET) by providing a percolating network of metallic islands to the inversion layer of the FET so as to effectively reduce the channel length of the FET. The metal islands can be provided in a number of ways, including Volmer- Weber metallic film growth, breaking apart continuous metallic film, patterning metallic coating, dispersing metallic particles in a semiconducting material, applying a layer of composite particles having metallic cores and semiconducting shells and co-sputtering metallic and semiconducting materials, among others. FETs made using disclosed methods have a novel channel structures that include metallic islands spaced apart by semiconducting material.
摘要翻译：通过向FET的反转层提供金属岛的渗透网络来提高场效应晶体管（FET）的性能，以有效地减小FET的沟道长度的方法。金属岛可以以多种方式提供，包括Volmer-Weber金属膜生长，分离连续金属膜，图案化金属涂层，将金属颗粒分散在半导体材料中，施加一层具有金属芯和半导体壳的复合颗粒并共溅射金属和半导体材料等。使用公开的方法制造的FET具有新颖的通道结构，其包括通过半导体材料隔开的金属岛。

7. 发明申请

WO2006029414A3 METHOD OF MAKING A MICROELECTRONIC AND/OR OPTOELECTRONIC CIRCUITRY SHEET 审中-公开
公开(公告)号：WO2006029414A3
公开(公告)日：2006-03-16
申请号：PCT/US2005/032947
申请日：2005-09-12
申请人： VERSATILIS LLC , JAIN, Ajaykumar, R.
发明人： JAIN, Ajaykumar, R.
IPC分类号： H01L21/027 , H01L21/469 , H01L21/475 , H01L21/461 , H01L21/4757
摘要： A circuitry sheet (322) comprising an electronic device layer stack (304) containing electronic devices, e.g., thin-film transistors, or portions thereof, formed by removing material from both sides of the device layer stack. The circuitry sheet may be made by an electronic/optoelectronic device manufacturing method (200) that includes the steps of forming the device layer stack on a temporary substrate (300), removing material from both sides of the device layer stack, and then attaching a permanent substrate (348) to the device layer stack. The method uses one or more resist layers (600) that may be activated simultaneously and independently to impart distinct circuit pattern images (603, 608, 612) into each of a plurality of image levels (612, 616, 620) within each resist layer, thereby obviating repetitive sequential exposure, registration and alignment steps.

8. 发明申请

WO2013039897A2 PHOSPHORS FOR USE WITH LEDS AND OTHER OPTOELECTRONIC DEVICES 审中-公开
标题翻译：用于LED和其他光电子器件的磷光体
公开(公告)号：WO2013039897A2
公开(公告)日：2013-03-21
申请号：PCT/US2012/054638
申请日：2012-09-11
申请人： VERLASE TECHNOLOGIES LLC , JAIN, Ajaykumar, R.
发明人： JAIN, Ajaykumar, R.
IPC分类号： H01L33/50 , H01L33/48
CPC分类号： H01L33/502 , C09K11/88 , H01L2924/0002 , H01L2933/0041 , H05B33/10 , H05B33/14 , H01L2924/00
摘要： Phosphors fabricated from one or more layers of a naturally lamellar or fabricated lamellar semiconductor that is combined with a substrate. One or more of the layers of the lamellar semiconductor are separated from bulk material. The one or more layers are transformed into a phosphor for use with one or more light-emitting devices for the purpose of modifying the light emitted by the light-emitting device(s). Such transformation can be effected in a variety of ways, such as precise thinning or thickening of the removed layer(s) and/or intercalating one or more species of ions into the layer(s) that function as phosphors.
摘要翻译：由与衬底组合的一层或多层天然层状或制造的层状半导体制造的磷光体。层状半导体的一个或多个层与散装材料分离。为了修改由发光器件发射的光，一个或多个层被转换成与一个或多个发光器件一起使用的磷光体。这种转变可以以多种方式进行，例如精确地使被去除层变薄或变厚，和/或将一种或多种离子嵌入到充当荧光体的层中。

9. 发明申请

WO2012158256A1 RESONATOR-ENHANCED OPTOELECTRONIC DEVICES AND METHODS OF MAKING SAME 审中-公开
标题翻译：谐振器增强型光电器件及其制造方法
公开(公告)号：WO2012158256A1
公开(公告)日：2012-11-22
申请号：PCT/US2012/030540
申请日：2012-03-26
申请人： VerLASE TECHNOLOGIES LLC , JAIN, Ajaykumar, R.
发明人： JAIN, Ajaykumar, R.
IPC分类号： H01S5/10 , H01S3/05
CPC分类号： G02B5/20 , B82Y20/00 , G02B5/207 , H01L31/02327 , H01L31/162 , H01L33/502 , H01S3/0092 , H01S3/082 , H01S5/005 , H01S5/10 , H01S5/1092 , H01S5/1096 , Y10S977/755 , Y10S977/774
摘要： Optical resonators that are enhanced with photoluminescent phosphors and are designed and configured to output light at one or more wavelengths based on input/pump light, and systems and devices made with such resonators. In some embodiments, the resonators contain multiple optical resonator cavities in combination with one or more photoluminescent phosphor layers or other structures. In other embodiments, the resonators are designed to simultaneously resonate at the input/pump and output wavelengths. The photoluminescent phosphors can be any suitable photoluminescent material, including semiconductor and other materials in quantum-confining structures, such as quantum wells and quantum dots, among others.
摘要翻译：用光致发光荧光体增强的光学谐振器，并且被设计和配置为基于输入/泵浦光输出一个或多个波长的光，以及用这种谐振器制造的系统和器件。在一些实施例中，谐振器包含与一个或多个光致发光荧光体层或其它结构组合的多个光学谐振腔。在其它实施例中，谐振器被设计成在输入/泵和输出波长下同时谐振。光致发光荧光体可以是任何合适的光致发光材料，包括量子限制结构中的半导体和其它材料，例如量子阱和量子点等。

10. 发明申请

WO2002103408A2 OPTICAL DEVICE FOR DISPERSION COMPENSATION 审中-公开
标题翻译：用于分散补偿的光学装置
公开(公告)号：WO2002103408A2
公开(公告)日：2002-12-27
申请号：PCT/US2002/019168
申请日：2002-06-14
申请人： TERALUM LLC , JAIN, Ajaykumar, R.
发明人： JAIN, Ajaykumar, R.
IPC分类号： G02B
CPC分类号： G02B6/29394 , G01J3/26 , G02B5/284 , G02B6/29358 , G02B6/29386
摘要： An optical device for receiving input light and for acting on the input light to produce output light includes a first reflector and a second reflector supported in a spaced-apart, confronting relationship with the first reflector such that the input light received by the optical device, at least potentially, undergoes multiple reflections between the first and second reflectors. At least a selected one of the first and second reflectors is configured to subject each one of the plurality of different portions of the input light to one of the plurality of different reflectance values to produce an emitted light passing through at least the selected reflector in a way which is combinable to generate the output light.
摘要翻译：一种用于接收输入光（170）并用于作用在输入光上以产生输出光（172）的光学装置包括第一反射器（165）和第二反射器（163），第一反射器（165）和第二反射器（163）以与第一使得由光学装置接收的输入光至少可能在第一和第二反射器之间经历多次反射。至少所选择的第一和第二反射器中的一个被配置为使输入光的多个不同部分中的每一个对准多个不同反射率值之一，以产生通过至少所选择的反射器的发射光可组合的方式产生输出光。

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