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1. 发明申请

WO03061087A2 TEMPERATURE-STABILISED SEMICONDUCTOR LASER 审中-公开
标题翻译：下稳定的半导体激光器
公开(公告)号：WO03061087A2
公开(公告)日：2003-07-24
申请号：PCT/DE0300155
申请日：2003-01-20
申请人： UNIV WUERZBURG J MAXIMILIANS , REITHMAIER JOHANN PETER , KLOPF FRANK
发明人： REITHMAIER JOHANN PETER , KLOPF FRANK
IPC分类号： H01S5/068 , H01S5/12 , H01S5/125 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/068 , H01S5/12 , H01S5/125 , H01S5/34 , H01S5/341 , H01S5/3412 , H01S2301/04
摘要： The invention relates to a semiconductor laser, which exhibits a flat amplification curve (41) in an energy range around the emission wavelength. When the gradient dgmat/dE (42) of the amplification curve gmat(E) (41) is small (one to two orders of magnitude smaller than in conventional semiconductor materials), the semiconductor laser exhibits a particularly low temperature drift d lambda /dT (43). A flat amplification curve (41) of this type can be achieved by a quantum dot laser (42) with two energy levels, which are separated by a favourable energy band gap and have a favourable amplification ratio in relation to one another. By guiding the process appropriately during the formation of the quantum dot layer, the individual energy levels are spread in such a way that a total amplification curve gmat(E) (41) with a small gradient dgmat/dE (42) is obtained. A temperature-stabilised semiconductor laser of this type can also be achieved by a quantum wire laser.
摘要翻译：有人提出了一个平坦的增益曲线41次的发光波长具有能量的半导体激光器如果增益曲线42 dgmatdE的斜率gmate 41小一个数量级到比常规的半导体激光器的材料小两个数量级，这导致了特别低的温度漂移dχ半导体激光器的/ DT 43。为了实现这样的平坦的增益曲线41，量子点激光器42，提出了一种具有两个能级;这些都是彼此有利于节能的距离和具有有利的放大比到彼此。通过在量子点层的形成适当的过程控制，各个能级变宽，使得总增益曲线41 gmate dgmat低斜率/ DE 42分的结果。这样的温度稳定的半导体激光器可以通过量子线激光器来实现。

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