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    • 5. 发明申请
    • POROUS AND NON-POROUS NANOSTRUCTURES
    • 多孔和非多孔纳米结构
    • WO2011156028A2
    • 2011-12-15
    • PCT/US2011027746
    • 2011-03-09
    • UNIV TEXASFERRARI MAUROLIU XUEWUCHIAPPINI CIROFAKHOURY JEAN RAYMOND
    • FERRARI MAUROLIU XUEWUCHIAPPINI CIROFAKHOURY JEAN RAYMOND
    • H01L29/06H01L21/306H01L23/48H01L23/532
    • H01L29/0665B82Y10/00B82Y30/00B82Y40/00H01L2924/0002H01L2924/00
    • Disclosed are a variety of porous and non-porous wire-like structures of microscopic and nanoscopic scale. For instance, disclosed are structures that comprise a porous object that comprises: (i) a first region; and (ii) a second region adjacent to the first region along an axis of the object, where the first region has at least one porous property different from that of the second region. Also disclosed are structures that include: (i) a high resistivity silicon; and (ii) a cross-section that is substantially perpendicular to an axis of the object. Also disclosed are methods of making and using such structures. For instance, the present invention provides methods of making a porous object by: (i) obtaining an etchable substrate; (ii) forming on a surface of the substrate a patterned porosification assisting metal layer that has at least one opening; and (iii) subsequently exposing the substrate to a first etching solution and a second etching solution to form respectively a first region and a second region of a porous object.
    • 公开了各种微观和纳米尺度的多孔和无孔线状结构。 例如,公开的是包括多孔物体的结构,其包括:(i)第一区域; 和(ii)沿所述物体的轴线邻近所述第一区域的第二区域,其中所述第一区域具有与所述第二区域不同的至少一个多孔性质。 还公开了包括:(i)高电阻率硅; 和(ii)基本上垂直于物体轴线的横截面。 还公开了制造和使用这种结构的方法。 例如,本发明提供了通过以下步骤制造多孔物体的方法:(i)获得可蚀刻的基底; (ii)在所述基材的表面上形成具有至少一个开口的图案化的赋形金属层; 和(iii)随后将所述衬底暴露于第一蚀刻溶液和第二蚀刻溶液以分别形成多孔物体的第一区域和第二区域。