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1. 发明申请

WO2015047477A3 SYSTEMS AND METHODS FOR THE SYNTHESIS OF HIGH THERMOELECTRIC PERFORMANCE DOPED-SnTe MATERIALS 审中-公开
标题翻译：合成高热电性能掺杂SnTe材料的系统与方法
公开(公告)号：WO2015047477A3
公开(公告)日：2015-06-18
申请号：PCT/US2014042765
申请日：2014-06-17
申请人： UNIV HOUSTON SYSTEM , MASSACHUSETTS INST TECHNOLOGY , REN ZHIFENG , ZHANG QIAN , CHEN GANG
发明人： REN ZHIFENG , ZHANG QIAN , CHEN GANG
IPC分类号： C04B35/00
CPC分类号： H01L35/16 , H01L35/34
摘要： A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 µV/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 µV/K at any temperature.
摘要翻译：一种包含锡（Sn），碲（Te）和至少一种掺杂剂的热电组合物，其包含峰值无量纲品质因数（ZT）为1.1，塞贝克系数为至少50μV/ K，以及制造热电组合物的方法。多个部件设置在球磨容器中，其中多个部件包括锡（Sn），碲（Te）和至少一种掺杂剂如铟（In）。随后机械和热处理组件，例如通过热压。响应于机械热处理，形成热电组合物，其中热电组合物包含热电组合物的无量纲优点（ZT）至少为0.8，并且其中热电组成的塞贝克系数为至少50 μV/ K。

2. 发明申请

WO2009135013A8 THERMOELECTRIC SKUTTERUDITE COMPOSITIONS AND METHODS FOR PRODUCING THE SAME 审中-公开
标题翻译：热电滑石组合物及其制造方法
公开(公告)号：WO2009135013A8
公开(公告)日：2010-11-18
申请号：PCT/US2009042327
申请日：2009-04-30
申请人： MASSACHUSETTS INST TECHNOLOGY , CHEN GANG , HE QINYU , YAN XIAO , HAO QING , REN ZHIFENG , YANG JIAN , TRUSTEES BOSTON COLLEGE
发明人： CHEN GANG , HE QINYU , YAN XIAO , HAO QING , REN ZHIFENG , YANG JIAN
IPC分类号： C01G30/00 , B82B3/00 , H01L35/18
CPC分类号： H01L35/18 , B22F2998/10 , B22F2999/00 , B82Y30/00 , C01G49/009 , C01G51/006 , C01G53/006 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/88 , C01P2004/03 , C01P2004/04 , C01P2004/64 , C01P2006/10 , C01P2006/40 , C22C1/0433 , C22C1/0466 , H01L35/26 , Y02P20/129 , Y10S977/773 , B22F9/04 , B22F9/14 , B22F1/0018 , B22F2009/043 , B22F2203/11
摘要： Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermoelectric materials such as n-type and p-type skutterudites with high thermoelectric figures-of- merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non- Skutterudite- based materials, or combinations of such materials.
摘要翻译：公开了与基于方钴矿的热电材料相关的组合物。这样的组合物可以产生相对于衍生组合物的一种或多种散装材料具有增强的ZT值的材料。具有高热电性能的n型和p型方钴矿的热电材料可以包括具有填料原子和/或通过将颗粒（例如纳米颗粒）压实成多个颗粒而形成的材料的材料，每个颗粒具有部分具有基于方钴矿的结构。还公开了形成热电方钴矿的方法，其可以包括使用热压工艺来固结颗粒。要固结的颗粒可以衍生自（例如研磨），基于方钴矿的散装材料，元素材料，其他基于非方钴矿的材料或这些材料的组合。

3. 发明申请

WO2006137923A8 NANOCOMPOSITES WITH HIGH THERMOELECTRIC FIGURES OF MERIT 审中-公开
标题翻译：具有高温热电偶图的纳米复合材料
公开(公告)号：WO2006137923A8
公开(公告)日：2007-07-05
申请号：PCT/US2005039362
申请日：2005-10-31
申请人： MASSACHUSETTS INST TECHNOLOGY , TRUSTEES BOSTON COLLEGE , CHEN GANG , REN ZHIFENG , DRESSELHAUS MILDRED
发明人： CHEN GANG , REN ZHIFENG , DRESSELHAUS MILDRED
IPC分类号： H01L35/16 , H01L35/22
CPC分类号： B29C43/36 , H01L35/16 , H01L35/22 , Y10S257/00 , Y10T428/2938
摘要： The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nanosized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k B T, wherein k B is the Boltzman constant and T is an average temperature of said nanocomposite composition.
摘要翻译：本发明一般涉及显示增强的热电性能的纳米复合热电材料。纳米复合材料包括两种或更多种组分，其中至少一种组分在复合材料内形成纳米尺寸结构。选择组分使得复合材料的导热性降低而基本上不会降低复合材料的导电性。合适的组分材料表现出类似的电子带结构。例如，一个组分材料的导带或价带中的至少一个与组分之间的界面处的另一组分材料的相应带之间的带边间隙可以小于约5k B B， SUB> T，其中k B是Boltzman常数，T是所述纳米复合材料组合物的平均温度。

4. 发明申请

WO2006137923A3 NANOCOMPOSITES WITH HIGH THERMOELECTRIC FIGURES OF MERIT 审中-公开
标题翻译：具有高温热电偶图的纳米复合材料
公开(公告)号：WO2006137923A3
公开(公告)日：2008-03-20
申请号：PCT/US2005039362
申请日：2005-10-31
申请人： MASSACHUSETTS INST TECHNOLOGY , TRUSTEES BOSTON COLLEGE , CHEN GANG , REN ZHIFENG , DRESSELHAUS MILDRED
发明人： CHEN GANG , REN ZHIFENG , DRESSELHAUS MILDRED
IPC分类号： H01L35/16 , H01L35/22
CPC分类号： B29C43/36 , H01L35/16 , H01L35/22 , Y10S257/00 , Y10T428/2938
摘要： The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nanosized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k B T, wherein k B is the Boltzman constant and T is an average temperature of said nanocomposite composition.
摘要翻译：本发明一般涉及显示增强的热电性质的纳米复合热电材料。纳米复合材料包括两种或多种组分，其中至少一种组分在复合材料内形成纳米尺寸结构。选择这些组分使得复合材料的热导率降低而基本上不会降低复合材料的导电性。合适的组分材料表现出类似的电子带结构。例如，在一个组分材料的导带或价带中的至少一个与组分之间的界面处的另一组分材料的相应带之间的带边缘间隙可以小于约5k B B， SUB> T，其中k B是Boltzman常数，T是所述纳米复合组合物的平均温度。

5. 发明申请

WO2009135013A3 THERMOELECTRIC SKUTTERUDITE COMPOSITIONS AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：热电钻石组合物及其制造方法
公开(公告)号：WO2009135013A3
公开(公告)日：2010-02-18
申请号：PCT/US2009042327
申请日：2009-04-30
申请人： MASSACHUSETTS INST TECHNOLOGY , CHEN GANG , HE QINYU , YAN XIAO , HAO QING , REN ZHIFENG , YANG JIAN , TRUSTEES BOSTON COLLEGE
发明人： CHEN GANG , HE QINYU , YAN XIAO , HAO QING , REN ZHIFENG , YANG JIAN
IPC分类号： C01G30/00 , B82B3/00 , H01L35/18
CPC分类号： H01L35/18 , B22F2998/10 , B22F2999/00 , B82Y30/00 , C01G49/009 , C01G51/006 , C01G53/006 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/88 , C01P2004/03 , C01P2004/04 , C01P2004/64 , C01P2006/10 , C01P2006/40 , C22C1/0433 , C22C1/0466 , H01L35/26 , Y02P20/129 , Y10S977/773 , B22F9/04 , B22F9/14 , B22F1/0018 , B22F2009/043 , B22F2203/11
摘要： Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermoelectric materials such as n-type and p-type skutterudites with high thermoelectric figures-of- merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non- Skutterudite- based materials, or combinations of such materials.
摘要翻译：公开了与基于方钴矿的热电材料相关的组合物。这样的组合物可以产生相对于衍生组合物的一种或多种散装材料具有增强的ZT值的材料。具有高热电性能的n型和p型方钴矿的热电材料可以包括具有填料原子和/或通过将颗粒（例如纳米颗粒）压实成多个颗粒而形成的材料的材料，每个颗粒具有部分具有基于方钴矿的结构。还公开了形成热电方钴矿的方法，其可以包括使用热压工艺来固结颗粒。要固结的颗粒可以衍生自（例如研磨），基于方钴矿的散装材料，元素材料，其他基于非方钴矿的材料或这些材料的组合。

6. 发明申请

WO2008140596A2 METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC MATERIALS 审中-公开
标题翻译：在纳米结构的热电材料中的高图形方法
公开(公告)号：WO2008140596A2
公开(公告)日：2008-11-20
申请号：PCT/US2007086291
申请日：2007-12-03
申请人： MASSACHUSETTS INST TECHNOLOGY , REN ZHIFENG , POUDEL BED , CHEN GANG , LAN YUCHENG , WANG DEZHI , HAO QING , DRESSELHAUS MILDRED , MA YI , YAN XIAO , CHEN XIAOYUAN , WANG XIAOWEI , JOSHI GIRI RAJ , YU BO
发明人： REN ZHIFENG , POUDEL BED , CHEN GANG , LAN YUCHENG , WANG DEZHI , HAO QING , DRESSELHAUS MILDRED , MA YI , YAN XIAO , CHEN XIAOYUAN , WANG XIAOWEI , JOSHI GIRI RAJ , YU BO
IPC分类号： H01L35/16 , H01L35/34
CPC分类号： H01L35/16 , H01L35/26 , H01L35/34
摘要： Thermoelectric materials with high figures of merit, ZT values, are disclosed In many instances, such materials include nano-sized domains (e g, nanocrystalhne), which are hypothesized to help increase the ZT value of the material (e g, by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries) The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e g, via direct current induced hot press) into a new bulk material Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped Various compositions and methods relating to aspects of nanostructured theromoelectpc materials (e g, modulation doping) are further disclosed
摘要翻译：公开了具有高品质因数（ZT值）的热电材料在许多情况下，这些材料包括纳米尺寸域（例如，纳米晶体），其被假设为有助于增加材料的ZT值（例如，通过增加声子散射在晶界或晶粒/夹杂物界面处的界面）这些材料的ZT值可以大于约1,1.2,1.4,1.5,1.8,2甚至更高。这样的材料可以通过从热电原料生成纳米颗粒来制造或来自可以随后固化（例如通过直流感应热压机）的元件的机械合金化纳米颗粒转化为新的体材料起始材料的非限制性实例包括铋，铅和/或硅基材料，其可以是合金化，元素化和/或掺杂进一步公开了与纳米结构的高选择性材料的方面有关的各种组成和方法（例如，调制掺杂）

7. 发明申请

WO2012138979A3 THERMOELECTRIC MATERIALS AND METHODS FOR SYNTHESIS THEREOF 审中-公开
标题翻译：热电材料及其合成方法
公开(公告)号：WO2012138979A3
公开(公告)日：2012-12-06
申请号：PCT/US2012032495
申请日：2012-04-06
申请人： TRUSTEES BOSTON COLLEGE , MASSACHUSETTS INST TECHNOLOGY , REN ZHIFENG , LIU WEISHU , CHEN GANG , CHEN SHUO
发明人： REN ZHIFENG , LIU WEISHU , CHEN GANG , CHEN SHUO
IPC分类号： H01L35/12
CPC分类号： C22C12/00 , B22F1/0018 , B22F3/14 , B22F9/04 , B82Y30/00 , C22C30/00
摘要： Thermoelectric materials with improved thermoelectric properties and methods for synthesis of such thermoelectric materials are disclosed herein. In some embodiment, a method of fabricating a thermoelectric material includes generating a plurality of nanoparticles from a starting material comprising one or more dopant materials and Bismuth Telluride based alloy materials; and consolidating the nanoparticles under pressure at a temperature greater than about 200 °C to form a doped Bismuth Telluride based alloy.
摘要翻译：具有改善的热电性能的热电材料和用于合成这种热电材料的方法在本文中公开。在一些实施例中，制造热电材料的方法包括从包含一种或多种掺杂剂材料和碲化铋基合金材料的起始材料产生多个纳米颗粒; 并在大于约200℃的温度下在压力下固化纳米颗粒以形成掺杂的碲化铋基合金。

8. 发明申请

WO2008063474A3 SOLAR THERMOELECTRIC CONVERSION 审中-公开
标题翻译：太阳能热电转换
公开(公告)号：WO2008063474A3
公开(公告)日：2009-04-23
申请号：PCT/US2007023776
申请日：2007-11-13
申请人： MASSACHUSETTS INST TECHNOLOGY , CHEN GANG , CHEN XIAOYUAN , DRESSELHAUS MILDRED , REN ZHIFENG
发明人： CHEN GANG , CHEN XIAOYUAN , DRESSELHAUS MILDRED , REN ZHIFENG
IPC分类号： H01L35/00 , H01L35/30
CPC分类号： H01L35/00 , F24J2/00 , F24J2/08 , F24J2/10 , H01L35/30 , Y02E10/40
摘要： Systems and methods utilizing solar-electrical generators are discussed. Solar- electrical generators are disclosed having a radiation-capture structure and one or more thermoelectric converters. Heat produced in a capture structure via impingement of solar radiation can maintain a portion of a thermoelectric converter at a high temperature, while the use of a low temperature at another portion allows electricity generation. Thus, unlike photovoltaic cells which are generally primarily concerned with optical radiation management, solar thermoelectrics converters are generally concerned with a variety of mechanisms for heat management. Generators can include any number of features including selective radiation surfaces, low emissivity surfaces, flat panel configurations, evacuated environments, and other concepts that can act to provide thermal concentration. Designs utilizing one or more optical concentrators are also disclosed.
摘要翻译：讨论了利用太阳能发电机的系统和方法。公开了具有辐射捕获结构和一个或多个热电转换器的太阳能发电机。通过太阳辐射的冲击在捕获结构中产生的热可以将热电转换器的一部分保持在高温，而在另一部分使用低温允许发电。因此，与通常主要涉及光辐射管理的光伏电池不同，太阳能热电转换器通常涉及各种用于热管理的机构。发电机可以包括任何数量的功能，包括选择性辐射表面，低辐射面，平板配置，抽真空环境以及可用于提供热集中的其他概念。还公开了利用一个或多个聚光器的设计。

9. 发明申请

WO2007084174A3 METAL-DOPED SEMICONDUCTOR NANOPARTICLES AND METHODS OF SYNTHESIS THEREOF 审中-公开
标题翻译：金属掺杂的半导体纳米颗粒及其合成方法
公开(公告)号：WO2007084174A3
公开(公告)日：2007-10-04
申请号：PCT/US2006017093
申请日：2006-05-03
申请人： MASSACHUSETTS INST TECHNOLOGY , TRUSTEES BOSTON COLLEGE , REN ZHIFENG , CHEN GANG , POUDEL BED , KUMAR SHANKAR , WANG WENZHONG , DRESSELHAUS MILDRED
发明人： REN ZHIFENG , CHEN GANG , POUDEL BED , KUMAR SHANKAR , WANG WENZHONG , DRESSELHAUS MILDRED
IPC分类号： C01B19/00 , C01B17/20 , H01L35/16 , H01L35/34
CPC分类号： H01L35/26 , B82Y30/00 , C01B19/002 , C01B19/007 , C01P2002/52 , C01P2002/72 , C01P2004/03 , C01P2004/04 , C01P2004/30 , C01P2004/38 , C01P2004/62 , C01P2004/64 , C01P2006/40 , Y10S977/813
摘要： The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.
摘要翻译：本发明一般涉及掺杂有金属元素的二元或更高阶半导体纳米粒子，以及包含这种纳米粒子的热电组合物。在一个方面，本发明提供了一种包含多个纳米颗粒的热电组合物，每个纳米颗粒包括由IV族元素和VI族元素形成的合金基质和分布在基质内的金属掺杂剂。

10. 发明申请

WO2007084173A3 METHODS FOR SYNTHESIS OF SEMICONDUCTOR NANOCRYSTALS AND THERMOELECTRIC COMPOSITIONS 审中-公开
标题翻译：半导体纳米晶体和热电组合物的合成方法
公开(公告)号：WO2007084173A3
公开(公告)日：2007-11-08
申请号：PCT/US2006016995
申请日：2006-05-03
申请人： MASAACHUSETTS INST OF TECHNOLO , TRUSTEES BOSTON COLLEGE , REN ZHIFENG , CHEN GANG , POUDEL BED , KUMAR SHANKAR , WANG WENZHONG , DRESSELHAUS MILDRED
发明人： REN ZHIFENG , CHEN GANG , POUDEL BED , KUMAR SHANKAR , WANG WENZHONG , DRESSELHAUS MILDRED
IPC分类号： C01B19/00 , C01G21/00 , H01M4/58
CPC分类号： C01B19/007 , B82Y30/00 , C01P2002/72 , C01P2004/03 , C01P2004/04 , C01P2004/30 , C01P2004/38 , C01P2004/62 , C01P2004/64 , C04B35/547 , C04B35/632 , C04B35/63488 , C04B35/645 , C04B2235/32 , C04B2235/3201 , C04B2235/3281 , C04B2235/3291 , C04B2235/3293 , C04B2235/3296 , C04B2235/50 , C04B2235/5454 , C04B2235/549 , C04B2235/77 , C04B2235/781 , C04B2235/96 , C04B2235/9607 , H01M4/581 , Y10S977/773 , Y10S977/775 , Y10S977/813 , Y10S977/814
摘要： The present invention provides methods for synthesis of IV-VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20 0C to about 360 °C, for a duration sufficient for generating nanoparticles as binary alloys of the IV-VI elements.
摘要翻译：本发明提供了合成IV-VI纳米结构的方法和由这种结构形成的热电组合物。一方面，该方法包括形成IV族试剂，VI族试剂和表面活性剂的溶液。可以将还原剂加入到溶液中，并且所得溶液可以保持在升高的温度，例如约20℃至约360℃的范围内，持续时间足以产生作为IV的二元合金的纳米颗粒 -VI元素。

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