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    • 6. 发明申请
    • PERMANENT SOLID STATE MEMORY USING CARBON-BASED OR METALLIC FUSES
    • 使用碳基或金属熔丝的永久固态记忆
    • WO2013158242A2
    • 2013-10-24
    • PCT/US2013029982
    • 2013-03-08
    • UNIV BRIGHAM YOUNG
    • LUNT BARRY MLINFORD MATTHEW RDAVIS ROBERT CPEARSON ANTHONY
    • G11C5/06H01L21/06H01L45/00
    • G11C17/16
    • A permanent solid state memory device is disclosed. Recording data in a permanent solid state memory device forms voids in a data layer between a first wire array and a second wire array. Wires of the first wire array extend transversely to wires in the second wire array. The material is made of a carbon allotrope such that when current is passed through the carbon allotrope, the carbon is quickly oxidized (burned) leaving a complete gap (void) where the fuse once was. One of the advantages of this method is that the fuse material is fully oxidized in the particular "neck region of the bowtie", such that there is no material left over from which dendrites can grow. The data layer may be a metal or metal oxide selected from the following metals: Tungsten (W), Rhenium (Rh), Osmium (Os), Iridium (Ir), Molybdenum (Mo), Ruthenium (Ru), Rhodium (Rh), Chromium (Cr), and Manganese (Mn).
    • 公开了永久固态存储器件。 在永久固态存储器件中记录数据在第一线阵列和第二线阵列之间的数据层中形成空隙。 第一线阵列的线横向延伸到第二线阵列中的线。 该材料由碳同素异形体制成,使得当电流通过碳同素异形体时,碳被快速氧化(燃烧),在熔断器一次处留下完全的间隙(空隙)。 这种方法的优点之一是熔丝材料在特定的“鞠躬颈部”中被完全氧化,使得没有留下剩余树脂的材料可以生长。 数据层可以是选自以下金属的金属或金属氧化物:钨(W),铼(Rh),锇(Os),铱(Ir),钼(Mo),钌(Ru),铑(Rh) ,铬(Cr)和锰(Mn)。