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1. 发明申请

WO2005013348A3 FORMATION OF ULTRA-THIN OXIDE AND OXYNITRIDE LAYERS BY SELF-LIMITING INTERFACIAL OXIDATION 审中-公开
标题翻译：通过自限界面氧化形成超薄氧化物和氧化氮化物层
公开(公告)号：WO2005013348A3
公开(公告)日：2005-09-22
申请号：PCT/US2004024595
申请日：2004-07-30
申请人： TOKYO ELECTRON LTD , IBM , O'MEARA DAVID L , WAJDA CORY , DIP ANTHONY , TOELLER MICHAEL , FURUKAWA TOSHIHARA , SCHEER KRISTEN , CALLEGARI ALESSANDRO , BUEHRER FRED , ZAFAR SUFI , GOUSEV EVGENI , CHOU ANTHONY , HIGGINS PAUL
发明人： O'MEARA DAVID L , WAJDA CORY , DIP ANTHONY , TOELLER MICHAEL , FURUKAWA TOSHIHARA , SCHEER KRISTEN , CALLEGARI ALESSANDRO , BUEHRER FRED , ZAFAR SUFI , GOUSEV EVGENI , CHOU ANTHONY , HIGGINS PAUL
IPC分类号： H01L21/00 , H01L21/314 , H01L21/316 , C23C16/30 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/318
CPC分类号： H01L21/67098 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662
摘要： Ultra-thin oxide and oxynitride layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide and oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in Si02 layers with a thickness of about 15Å, where the thickness of the Si02 layers varies less than about 1 Åover the substrates.
摘要翻译：使用低压处理形成超薄氧化物和氮氧化物层以实现衬底的自限氧化并提供超薄氧化物和氮氧化物。待处理的衬底可以包含诸如氧化物层，氮氧化物层，氮化物层，高k层的初始电介质层，或者可替代地可以缺少初始电介质层。该处理可以使用批量式处理室或者使用单晶片处理室来进行。本发明的一个实施方案提供了Si-衬底的自限氧化，其导致厚度为约的SiO 2层，其中SiO 2层的厚度在衬底上的变化小于约1。

2. 发明申请

WO2005029568A2 INTERFACIAL OXIDATION PROCESS FOR HIGH-k GATE DIELECTRIC PROCESS INTEGRATION 审中-公开
标题翻译：用于高k栅介质过程集成的界面氧化工艺
公开(公告)号：WO2005029568A2
公开(公告)日：2005-03-31
申请号：PCT/US2004026811
申请日：2004-08-19
申请人： TOKYO ELECTRON LTD , IBM , O'MEARA DAVID L , WAJDA CORY , TAKAHASHI TSUYOSHI , CALLEGARI ALESSANDRO , SCHEER KRISTEN , ZAFAR SUFI , JAMISON PAUL
发明人： O'MEARA DAVID L , WAJDA CORY , TAKAHASHI TSUYOSHI , CALLEGARI ALESSANDRO , SCHEER KRISTEN , ZAFAR SUFI , JAMISON PAUL
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , C23C16/34 , H01L21/00 , H01L21/66
CPC分类号： H01L21/28185 , H01L21/02181 , H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02304 , H01L21/28194 , H01L21/28202 , H01L21/3143 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31658 , H01L21/31662 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a highk layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.
摘要翻译：提供了一种用于通过使用扩散过滤层来形成具有界面氧化物层的微观结构以控制与形成高k层的微结构相关联的衬底的氧化性能的方法。扩散过滤层控制表面的氧化。可以在氧化过程中形成界面氧化物层，该氧化工艺是在将highk层沉积到扩散过滤层上之后，或者在将高k层沉积到扩散过滤层上时进行的。

3. 发明申请

WO2006107416A3 METHOD AND SYSTEM FOR FORMING AN OXYNITRIDE LAYER BY PERFORMING OXIDATION AND NITRIDATION CONCURRENTLY 审中-公开
标题翻译：通过同时进行氧化和氮化来形成氧化层的方法和系统
公开(公告)号：WO2006107416A3
公开(公告)日：2007-11-15
申请号：PCT/US2006005420
申请日：2006-02-16
申请人： TOKYO ELECTRON LTD , IBM , WAJDA CORY , FURUKAWA TOSHIHARA , SCHEER KRISTEN
发明人： WAJDA CORY , FURUKAWA TOSHIHARA , SCHEER KRISTEN
IPC分类号： B01J19/08 , H01L21/20
CPC分类号： H01L21/3144 , C23C8/28 , C23C8/36
摘要： A method for preparing an oxynitride film on a substrate comprising forming the oxynitride film by exposing a surface of the substrate to oxygen radicals and nitrogen radicals formed by plasma induced dissociation of a process gas comprising nitrogen and oxygen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits.
摘要翻译：一种在衬底上制备氮氧化物膜的方法，包括通过将基底的表面暴露于氧自由基和由等离子体引起的等离子体诱导的包含氮和氧的工艺气体的解离而形成氮氧化合物的方法，所述方法基于经由平面的微波照射的等离子体天线构件具有多个狭缝。

4. 发明申请

WO2005103333A3 WAFER HEATER ASSEMBLY 审中-公开
标题翻译： WAFER加热器总成
公开(公告)号：WO2005103333A3
公开(公告)日：2006-09-14
申请号：PCT/US2005002766
申请日：2005-02-01
申请人： TOKYO ELECTRON LTD , O'MEARA DAVID L , LEUSINK GERRIT J , CABRAL STEPHEN H , DIP ANTHONY , WAJDA CORY , JOE RAYMOND
发明人： O'MEARA DAVID L , LEUSINK GERRIT J , CABRAL STEPHEN H , DIP ANTHONY , WAJDA CORY , JOE RAYMOND
IPC分类号： C23C16/00 , C23F1/00 , H01L21/00
CPC分类号： H01L21/67109 , H01J2237/2001
摘要： A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon 'wire' or `braided' structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.
摘要翻译：描述了具有用于单个晶片处理系统的唯一加热器元件的晶片加热组件。加热单元包括封装在石英鞘中的碳线元件。加热单元与石英无污染，允许直接接触晶片。碳线或“编织”结构的机械灵活性允许线圈配置，其允许跨晶片的独立加热器区域控制。跨晶片的多个独立的加热器区域可以允许温度梯度调节膜生长/沉积均匀性和快速的热调节，其膜均匀性优于常规单晶片系统，并且最小至无晶片翘曲。低热质量允许快速的热响应，其实现脉冲或数字热处理，其导致逐层成膜以改善薄膜控制。

5. 发明申请

WO2007041040A2 A METHOD OF FORMING A GATE STACK CONTAINING A GATE DIELECTRIC LAYER HAVING REDUCED METAL CONTENT 审中-公开
标题翻译：形成具有减少金属含量的栅介质层的栅格堆叠的方法
公开(公告)号：WO2007041040A2
公开(公告)日：2007-04-12
申请号：PCT/US2006037079
申请日：2006-09-22
申请人： TOKYO ELECTRON LTD , O'MEARA DAVID L , LEE YOUNGJONG , WAJDA CORY
发明人： O'MEARA DAVID L , LEE YOUNGJONG , WAJDA CORY
IPC分类号： H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L21/28194 , H01L21/3105 , H01L21/31116 , H01L21/31122 , H01L29/517 , H01L29/78
摘要： A method is provided for reducing the metal content and controlling the metal depth profile of a gate dielectric layer in a gate stack. The method includes providing a substrate in a process chamber, depositing a gate dielectric layer on the substrate, where the gate dielectric layer includes a metal element. The metal element is selectively etched from at least a portion of the gate dielectric layer to form an etched gate dielectric layer with reduced metal content, and a gate electrode layer is formed on the etched gate dielectric layer.
摘要翻译：提供了一种用于减少金属含量并控制栅叠层中的栅介质层的金属深度分布的方法。该方法包括在处理室中提供衬底，在衬底上沉积栅极电介质层，其中栅极电介质层包括金属元素。从栅介质层的至少一部分选择性地蚀刻金属元件，以形成具有降低的金属含量的蚀刻栅极电介质层，并且在蚀刻的栅极介电层上形成栅极电极层。

6. 发明申请

WO2005034181A3 METHOD FOR MONITORING STATUS OF SYSTEM COMPONENTS 审中-公开
标题翻译：监控系统组件状态的方法
公开(公告)号：WO2005034181A3
公开(公告)日：2006-03-23
申请号：PCT/US2004028802
申请日：2004-09-21
申请人： TOKYO ELECTRON LTD , O'MEARA DAVID L , BURDETT DANIEL CRAIG , CABRAL STEPHEN H , LEUSINK GERT , KOSTENKO JOHN WILLIAM , WAJDA CORY
发明人： O'MEARA DAVID L , BURDETT DANIEL CRAIG , CABRAL STEPHEN H , LEUSINK GERT , KOSTENKO JOHN WILLIAM , WAJDA CORY
IPC分类号： H01L21/00 , G01N21/00 , G01N21/55 , G01N21/59
CPC分类号： H01J37/32935 , G01N21/55 , G01N21/59
摘要： A method and system (1) are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component (40) to light from a light source (300) and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.
摘要翻译：提供了一种方法和系统（1），用于监视批处理系统的处理室中的系统组件的状态。该方法包括将系统组件（40）暴露于来自光源（300）的光并监测光与系统组件的相互作用以确定系统组件的状态。该方法可以在可以包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺的过程中检测来自系统部件的光透射和/或光反射。系统组件可以是消耗系统部件，例如处理管，屏蔽，环，挡板和衬垫，并且还可以包含保护涂层。

7. 发明申请

WO2006039029A3 A METHOD FOR FORMING A THIN COMPLETE HIGH-PERMITTIVITY DIELECTRIC LAYER 审中-公开
标题翻译：一种形成薄的完整的高介电常数介电层的方法
公开(公告)号：WO2006039029A3
公开(公告)日：2006-07-27
申请号：PCT/US2005030841
申请日：2005-08-31
申请人： TOKYO ELECTRON LTD , TOKYO ELECTRON AMERICA INC , WAJDA CORY
发明人： WAJDA CORY
IPC分类号： H01L21/311 , H01L21/316
CPC分类号： H01L21/28194 , C23C16/40 , C23C16/401 , C23C16/405 , C23C16/5096 , C23C16/52 , H01L21/28185 , H01L21/3141 , H01L21/31645 , H01L21/823857 , H01L29/513 , H01L29/517
摘要： A method for forming a thin complete high-k layer (106, 207) for semiconductor applications. The method includes providing a substrate (25, 102, 202, 406) in a process chamber (10, 402), depositing a thick complete high-k layer (206) on the substrate (25, 102, 202, 406), and thinning the deposited high-k layer (206) to form a thin complete high-k layer (106, 207) on the substrate (25, 102, 202, 406). Alternately, the substrate (25, 102, 202, 406) can contain an interface layer (104, 204) between the substrate (25, 102, 202, 406) and the high-k layer (106, 207). The thinning can be performed by exposing the thick high-k layer (206) to a reactive plasma etch process or, alternately, a plasma process capable of modifying a portion of the thick high-k layer (206) and subsequently removing the modified portion (206a) of the thick high-k layer (206) using wet processing.
摘要翻译：一种用于形成用于半导体应用的薄的完整高k层（106,207）的方法。该方法包括在处理室（10,402）中提供衬底（25,102,202,406），在衬底（25,102,202,406）上沉积厚的完整高k层（206），以及使沉积的高k层（206）变薄以在衬底（25,102,202,406）上形成薄的完整高k层（106,207）。可选地，衬底（25,102,202,406）可以在衬底（25,102,202,406）和高k层（106,207）之间包含界面层（104,204）。可以通过将厚的高k层（206）暴露于反应性等离子体蚀刻工艺或者可选地等离子体工艺来执行该稀化，该等离子体工艺能够修改厚的高k层（206）的一部分并随后除去该修改的部分（206）的厚度（206a）。

8. 发明申请

WO2006083380A3 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2006083380A3
公开(公告)日：2007-06-21
申请号：PCT/US2005043293
申请日：2005-11-30
申请人： TOKYO ELECTRON LTD , WAJDA CORY , LEUSINK GERT
发明人： WAJDA CORY , LEUSINK GERT
IPC分类号： H01L21/336
CPC分类号： H01L29/495 , H01L21/28079 , H01L21/316
摘要： A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, forming low-energy excited dopant species from a process gas in a plasma, and exposing the gate stack to the excited dopant species to incorporate a dopant into the gate stack. The method can be utilized to tune the workfunction of the gate stack.
摘要翻译：一种在半导体器件制造中处理栅叠层的方法，其特征在于，提供一种基板，该基板含有形成在基板上的电介质层的栅叠层和形成在高k电介质层上的含金属的栅电极层，来自等离子体中的工艺气体的能量激发的掺杂剂物质，并且将栅极堆叠暴露于激发的掺杂物种类以将掺杂剂掺入到栅极堆叠中。该方法可用于调整栅极堆叠的功能。

9. 发明申请

WO2006107417A2 METHOD AND SYSTEM FOR FORMING A HIGH-K DIELECTRIC LAYER 审中-公开
标题翻译：用于形成高K电介质层的方法和系统
公开(公告)号：WO2006107417A2
公开(公告)日：2006-10-12
申请号：PCT/US2006005432
申请日：2006-02-16
申请人： TOKYO ELECTRON LTD , WAJDA CORY , IGETA MASANOBU , LEUSINK GERT
发明人： WAJDA CORY , IGETA MASANOBU , LEUSINK GERT
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C8/34 , C23C8/36 , H01J37/32192 , H01L21/0214 , H01L21/02238 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/3144 , H01L21/31662 , H01L21/31691 , H01L28/56
摘要： A method for preparing an interfacial layer for a high-k dielectric layer on a substrate. A surface of said substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen to nitridate the oxide film to form the interfacial layer. A high-k dielectric layer is formed on said interfacial layer.
摘要翻译：一种制备用于衬底上的高k电介质层的界面层的方法。所述衬底的表面暴露于由紫外线（UV）辐射引起的包含至少一种包含氧的分子组合物的第一工艺气体的解离形成的氧自由基以形成氧化膜。将氧化膜暴露于通过包含至少一种包含氮的分子组合物的第二工艺气体的等离子体诱导解离而形成的氮自由基以氮化氧化物膜以形成界面层。在所述界面层上形成高k电介质层。

10. 发明申请

WO2006104582A3 METHOD AND SYSTEM FOR INCREASING TENSILE STRESS IN A THIN FILM USING COLLIMATED ELECTROMAGNETIC RADIATION 审中-公开
标题翻译：使用集合电磁辐射在薄膜中增加拉伸应力的方法和系统
公开(公告)号：WO2006104582A3
公开(公告)日：2007-06-07
申请号：PCT/US2006005419
申请日：2006-02-16
申请人： TOKYO ELECTRON LTD , IGETA MASANOBU , WAJDA CORY , LEUSINK GERT
发明人： IGETA MASANOBU , WAJDA CORY , LEUSINK GERT
IPC分类号： H01L23/58 , C23C16/50 , H01L21/4757
CPC分类号： C23C16/56 , C23C16/345 , H01L21/3185 , H01L21/67115 , H01L21/67248 , H01L21/76825 , H01L21/76828 , H01L21/76829
摘要： A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to collimated electro-magnetic (EM) radiation to anisotropically expose the film. The EM radiation can have a component having a wavelength less than about 500 nm. The EM source can include a multi-frequency source of radiation.
摘要翻译：描述了一种用于增加在诸如氮化硅膜之类的衬底上形成的薄膜中的拉伸应力的方法和系统。薄膜可以是平面薄膜，或非平面薄膜，例如在NMOS栅极上形成的氮化物薄膜。将薄膜暴露于准直的电磁（EM）辐射以各向异性地暴露膜。 EM辐射可以具有波长小于约500nm的分量。 EM源可以包括多频辐射源。

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