专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2005013348A3 FORMATION OF ULTRA-THIN OXIDE AND OXYNITRIDE LAYERS BY SELF-LIMITING INTERFACIAL OXIDATION 审中-公开
标题翻译：通过自限界面氧化形成超薄氧化物和氧化氮化物层
公开(公告)号：WO2005013348A3
公开(公告)日：2005-09-22
申请号：PCT/US2004024595
申请日：2004-07-30
申请人： TOKYO ELECTRON LTD , IBM , O'MEARA DAVID L , WAJDA CORY , DIP ANTHONY , TOELLER MICHAEL , FURUKAWA TOSHIHARA , SCHEER KRISTEN , CALLEGARI ALESSANDRO , BUEHRER FRED , ZAFAR SUFI , GOUSEV EVGENI , CHOU ANTHONY , HIGGINS PAUL
发明人： O'MEARA DAVID L , WAJDA CORY , DIP ANTHONY , TOELLER MICHAEL , FURUKAWA TOSHIHARA , SCHEER KRISTEN , CALLEGARI ALESSANDRO , BUEHRER FRED , ZAFAR SUFI , GOUSEV EVGENI , CHOU ANTHONY , HIGGINS PAUL
IPC分类号： H01L21/00 , H01L21/314 , H01L21/316 , C23C16/30 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/318
CPC分类号： H01L21/67098 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662
摘要： Ultra-thin oxide and oxynitride layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide and oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in Si02 layers with a thickness of about 15Å, where the thickness of the Si02 layers varies less than about 1 Åover the substrates.
摘要翻译：使用低压处理形成超薄氧化物和氮氧化物层以实现衬底的自限氧化并提供超薄氧化物和氮氧化物。待处理的衬底可以包含诸如氧化物层，氮氧化物层，氮化物层，高k层的初始电介质层，或者可替代地可以缺少初始电介质层。该处理可以使用批量式处理室或者使用单晶片处理室来进行。本发明的一个实施方案提供了Si-衬底的自限氧化，其导致厚度为约的SiO 2层，其中SiO 2层的厚度在衬底上的变化小于约1。

2. 发明申请

WO2005031809A3 THE PRODUCTION OF A GERMANIUM OXYNITRIDE LAYER ON A GE-BASED MATERIAL 审中-公开
标题翻译：在GE基材料上生产氧化锗纳米层
公开(公告)号：WO2005031809A3
公开(公告)日：2005-06-23
申请号：PCT/EP2004052283
申请日：2004-09-23
申请人： IBM , IBM UK , GOUSEV EVGENI , SHANG HUILING , D EMIC CHRISTOPHER , KOZLOWSKI PAUL
发明人： GOUSEV EVGENI , SHANG HUILING , D EMIC CHRISTOPHER , KOZLOWSKI PAUL
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L21/318 , H01L29/51 , H01L29/772
CPC分类号： H01L21/28202 , H01L21/02247 , H01L21/02326 , H01L21/02337 , H01L21/0234 , H01L21/28255 , H01L21/3143 , H01L21/31658 , H01L21/318 , H01L29/518 , Y10S438/906 , Y10S438/933
摘要： A method for producing thin, below 6nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.
摘要翻译：公开了一种用作栅极电介质的Ge基材料上产生6nm以下等效氧化物厚度薄的锗氮氧化物层的方法。该方法涉及两步法。首先，在Ge基材料的表层中加入氮。其次，氮掺入之后是氧化步骤。该方法为基于Ge的场效应器件（例如MOS晶体管）的高质量栅极电介质产生优异的厚度控制。还公开了具有薄氮氧化锗栅电介质的器件的结构和用这种器件制造的处理器。

3. 发明申请

WO2008055150A3 METHOD OF FABRICATING A NITRIDED SILICON OXIDE GATE DIELECTRIC LAYER 审中-公开
标题翻译：制备氮化硅氧烷膜电介质层的方法
公开(公告)号：WO2008055150A3
公开(公告)日：2008-06-19
申请号：PCT/US2007082988
申请日：2007-10-30
申请人： IBM , ADAMS EDWARD DENNIS , BURNHAM JAY SANFORD , GOUSEV EVGENI , NAKOS JAMES SPIROS , PREUSS HEATHER ELIZABETH , SHEPARD JOSEPH FRANCIS
发明人： ADAMS EDWARD DENNIS , BURNHAM JAY SANFORD , GOUSEV EVGENI , NAKOS JAMES SPIROS , PREUSS HEATHER ELIZABETH , SHEPARD JOSEPH FRANCIS
IPC分类号： H01L21/31
CPC分类号： H01L21/3144 , H01L21/28202
摘要： A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface (32) of a silicon substrate (30); performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900 °C and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900 °C and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer (34). Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer (34).
摘要翻译：形成氮化硅氧化物层的方法。该方法包括：在硅衬底（30）的表面（32）上形成二氧化硅层; 在小于或等于约900℃的温度和大于约500托的压力下进行二氧化硅层的快速热氮化，以形成初始氮化氧化硅层; 并且在小于或等于约900℃的温度和大于约500托的压力下进行初始氮化硅氧化物层的快速热氧化或退火以形成氮化二氧化硅层（34）。还有一种用氮化硅氧化物介电层（34）形成MOSFET的方法。

4. 发明申请

WO2008100279A3 SELECTIVE ETCHING OF MEMS USING GASEOUS HALIDES AND REACTIVE CO-ETCHANTS 审中-公开
标题翻译：使用气体盖帽和反应性共同作用的MEMS的选择性蚀刻
公开(公告)号：WO2008100279A3
公开(公告)日：2009-01-22
申请号：PCT/US2007016353
申请日：2007-07-18
申请人： QUALCOMM MEMS TECHNOLOGIES INC , YAN XIAOMING , ARBUCKLE BRIAN , GOUSEV EVGENI , TUNG MING-HAU
发明人： YAN XIAOMING , ARBUCKLE BRIAN , GOUSEV EVGENI , TUNG MING-HAU
IPC分类号： B81C1/00
CPC分类号： G02B26/001 , B81B2201/047 , B81C1/00595 , B81C2201/0132
摘要： A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100- times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.
摘要翻译：在具有改进的选择性的结构材料存在下蚀刻靶材料的方法使用气相蚀刻剂和共蚀刻剂。与不使用共蚀刻剂的类似蚀刻工艺相比，该方法的实施方案显示出从至少约2倍至至少约100倍的改进的选择性。在一些实施例中，靶材料包括可由气相蚀刻剂蚀刻的金属。该方法的实施例在MEMS器件（例如干涉式调制器）的制造中特别有用。在一些实施例中，靶材料包括可由气相蚀刻剂（例如，钼）蚀刻的金属，并且结构材料包括电介质，例如二氧化硅。

5. 发明申请

WO2010093522A3 DISPLAY DEVICE WITH DESICCANT 审中-公开
标题翻译：显示设备与清洁剂
公开(公告)号：WO2010093522A3
公开(公告)日：2011-04-14
申请号：PCT/US2010022281
申请日：2010-01-27
申请人： QUALCOMM MEMS TECHNOLOGIES INC , NATARAJAN BANGALORE R , GOUSEV EVGENI , LAVERY KRISTOPHER A
发明人： NATARAJAN BANGALORE R , GOUSEV EVGENI , LAVERY KRISTOPHER A
IPC分类号： B81C1/00 , H01L23/26 , H01L51/52
CPC分类号： B01J20/2808 , B01D53/261 , B01D53/28 , B01D2253/108 , B01J20/18 , B01J20/183 , B01J20/2803 , B01J2220/42 , B81B2201/047 , B81C1/00285 , B81C2201/112 , H01L23/26 , H01L51/5259 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/1433 , Y10T156/10 , H01L2924/00
摘要： Systems and methods for providing MEMS devices with integrated desiccant are provided. In one embodiment, a dry composition comprising desiccant is impact sprayed onto the backplate or substrate of a MEMS device, and becomes fused with the substrate. In another embodiment, the desiccant is impact sprayed such that the desiccant adheres to the impact sprayed surface. In yet another embodiment, the impact- sprayed surface is impregnated with the desiccant. In still another embodiment, the desiccant is combined with a suitable inorganic binder, then impact sprayed such that the desiccant adheres to the impact sprayed surface. In yet a further embodiment, the desiccant is micronized or pulverized into a powder of desired particle size, and then impact sprayed onto a surface. Thus, the desiccant particles or powder are fused onto the target surface through the impact spraying process.
摘要翻译：提供了为MEMS器件提供集成干燥剂的系统和方法。在一个实施方案中，将包含干燥剂的干组合物冲击喷射到MEMS装置的背板或基板上，并与基底熔合。在另一个实施例中，干燥剂被冲击喷涂，使得干燥剂粘附到冲击喷涂表面上。在又一实施例中，冲击喷射表面用干燥剂浸渍。在另一个实施方案中，将干燥剂与合适的无机粘合剂组合，然后冲洗喷雾，使得干燥剂粘附到冲击喷涂表面上。在又一个实施方案中，干燥剂被微粉化或粉碎成所需粒度的粉末，然后冲击喷涂到表面上。因此，干燥剂颗粒或粉末通过冲击喷涂工艺熔合到目标表面上。

6. 发明申请

WO2008115716A3 MEMS CAVITY-COATING LAYERS AND METHODS 审中-公开
标题翻译： MEMS CAVAY-COATING LAYERS AND METHODS
公开(公告)号：WO2008115716A3
公开(公告)日：2009-04-09
申请号：PCT/US2008056310
申请日：2008-03-07
申请人： QUALCOMM MEMS TECHNOLOGIES INC , LONDERGAN ANA R , NATARAJAN BANGALORE R , GOUSEV EVGENI , WEBSTER JAMES RANDOLPH , HEALD DAVID
发明人： LONDERGAN ANA R , NATARAJAN BANGALORE R , GOUSEV EVGENI , WEBSTER JAMES RANDOLPH , HEALD DAVID
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： G02B26/001 , B81B3/0008 , B81B2201/047
摘要： Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.
摘要翻译：包括MEMS器件（例如干涉式调制器）的器件，方法和系统，其包括其中层涂覆多个表面的空腔。该层是保形的或非保形的。在一些实施例中，该层由原子层沉积（ALD）形成。优选地，该层包括电介质材料。在一些实施例中，MEMS器件还表现出改进的特性，例如移动电极之间的改善的电绝缘性，降低的静摩擦力和/或改善的机械性能。

7. 发明申请

WO2008054520A3 ELECTRODE AND INTERCONNECT MATERIALS FOR MEMS INTERFEROMETRIC MODULATORS 审中-公开
标题翻译：用于MEMS干涉仪调制器的电极和互连材料
公开(公告)号：WO2008054520A3
公开(公告)日：2008-12-18
申请号：PCT/US2007010166
申请日：2007-04-25
申请人： QUALCOMM MEMS TECHNOLOGIES INC , XU GANG , GOUSEV EVGENI
发明人： XU GANG , GOUSEV EVGENI
IPC分类号： B81C1/00 , G02B26/00
CPC分类号： G02B26/001 , B81B2201/047 , B81C1/00246
摘要： A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.
摘要翻译：提出了一种包括金属化半导体的微机电（MEMS）器件。金属化半导体由于其低电阻率而可用于导体应用，并且由于其半导体性质而可用于晶体管应用。此外，金属化半导体可以被调谐以具有允许其对于光学MEMS器件有用的光学性质。

8. 发明申请

WO2007120464A8 INTERFEROMETRIC OPTICAL DISPLAY SYSTEM WITH BROADBAND CHARACTERISTICS 审中-公开
标题翻译：具有宽带特性的光纤显示系统
公开(公告)号：WO2007120464A8
公开(公告)日：2007-12-27
申请号：PCT/US2007008089
申请日：2007-04-02
申请人： QUALCOMM INC , GOUSEV EVGENI , XU GANG , MIENKO MAREK
发明人： GOUSEV EVGENI , XU GANG , MIENKO MAREK
IPC分类号： G02B26/00
CPC分类号： G02B26/001 , Y10T29/49124
摘要： Broad band white color can be achieved in MEMS display devices by incorporating a material having an extinction coefficient (k) below a threshold value for wavelength of light within an operative optical range of the interf erometric modulator. One embodiment provides a method of making the MEMS display device comprising depositing said material (23) over at least a portion of a transparent substrate (20), depositing a dielectric layer (24) over the layer of material, forming a sacrificial layer over the dielectric, depositing an electrically conductive layer (14) on the sacrificial layer, and forming a cavity (19) by removing at least a portion of the sacrificial layer. The suitable material may comprise germanium, germanium alloy of various compositions, doped germanium or doped germanium -containing alloys, and may be deposited over the transparent substrate, incorporated within the transparent substrate or the dielectric layer.
摘要翻译：通过在界面测量调制器的可操作光学范围内并入具有低于阈值的消光系数（k）的材料，可以在MEMS显示装置中实现宽带白色。一个实施例提供了一种制造MEMS显示装置的方法，包括在透明基板（20）的至少一部分上沉积所述材料（23），在该材料层上沉积介电层（24），在该层上形成牺牲层电介质，在所述牺牲层上沉积导电层（14），以及通过去除所述牺牲层的至少一部分来形成空腔（19）。合适的材料可以包括各种组成的锗，锗合金，掺杂的锗或掺杂的含锗的合金，并且可以沉积在透明衬底上，并入透明衬底或电介质层中。

9. 发明申请

WO2013003125A9 APPARATUS AND METHOD FOR OPTICAL DECOUPLING 审中-公开
标题翻译：光学解除装置和方法
公开(公告)号：WO2013003125A9
公开(公告)日：2013-02-28
申请号：PCT/US2012043164
申请日：2012-06-19
申请人： QUALCOMM MEMS TECHNOLOGIES INC , GOUSEV EVGENI , GRUHLKE RUSSELL WAYNE
发明人： GOUSEV EVGENI , GRUHLKE RUSSELL WAYNE
IPC分类号： G02F1/1335
CPC分类号： G02B26/001 , Y10T29/49826
摘要： This disclosure provides apparatus, systems and methods for optical decoupling. In one implementation, an optical system includes a substrate transmissive to visible light, a first antireflective structure disposed on a surface of the substrate, a second antireflective structure. The first and second antireflective structures define at least one cavity containing air in between. The optical system further includes a plurality of support posts configured to space the first antireflective structure from the second antireflective structure to define the height of the at least one cavity. A reflective display is disposed on a surface of the second antireflective structure opposite the at least one cavity.
摘要翻译：本公开提供了用于光学去耦的装置，系统和方法。在一个实施方式中，光学系统包括透射可见光的衬底，设置在衬底的表面上的第一抗反射结构，第二抗反射结构。第一和第二抗反射结构限定了至少一个容纳空气的空腔。光学系统还包括多个支撑柱，其被配置为将第一抗反射结构与第二抗反射结构间隔开以限定至少一个空腔的高度。反射显示器设置在与至少一个腔相对的第二抗反射结构的表面上。

10. 发明申请

WO2009036215A8 ETCHING PROCESSES USED IN MEMS PRODUCTION 审中-公开
标题翻译：在MEMS生产中使用的蚀刻工艺
公开(公告)号：WO2009036215A8
公开(公告)日：2009-08-20
申请号：PCT/US2008076077
申请日：2008-09-11
申请人： QUALCOMM MEMS TECHNOLOGIES INC , YAN XIAOMING , HO CHOK , HEALD DAVID , GOUSEV EVGENI , HERTZLER BENJAMIN W , FLOYD PHILIP , SASAGAWA TERUO , LONDERGAN ANA , BITA ION , ZION TODD
发明人： YAN XIAOMING , HO CHOK , HEALD DAVID , GOUSEV EVGENI , HERTZLER BENJAMIN W , FLOYD PHILIP , SASAGAWA TERUO , LONDERGAN ANA , BITA ION , ZION TODD
IPC分类号： H01L21/311 , B01D53/68 , H01L21/3213
CPC分类号： H01L21/32135 , B01D53/002 , B01D2257/11 , B01D2257/2027 , H01L21/31116
摘要： A method of fabricating an electromechanical device which comprises a step of etching a sacrificial layer with an etchant comprising a noble gas fluoride, e.g. xenon difluoride (XeF2). The efficiency of the etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.
摘要翻译：一种制造机电装置的方法，其包括用包括惰性气体氟化物的蚀刻剂蚀刻牺牲层的步骤，例如，氙二氟化物（XeF2）。可以以各种方式提高蚀刻工艺的效率，并且可以降低蚀刻工艺的成本。未蚀刻的蚀刻剂可以在蚀刻过程中被隔离并再循环。蚀刻副产物可以在蚀刻过程中从蚀刻系统中收集和去除。蚀刻剂的组分可以被分离并用于一般的另外的蚀刻剂。蚀刻剂或被蚀刻的层中的任一个或两者也可以针对特定的蚀刻工艺进行优化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式