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1. 发明申请

WO1998027588A1 A VIA STRUCTURE 审中-公开
标题翻译：威尼斯结构
公开(公告)号：WO1998027588A1
公开(公告)日：1998-06-25
申请号：PCT/SE1997002188
申请日：1997-12-19
申请人： TELEFONAKTIEBOLAGET LM ERICSSON (publ)
发明人： TELEFONAKTIEBOLAGET LM ERICSSON (publ) , HESSELBOM, Hjalmar , BODÖ, Peter
IPC分类号： H01L23/485
CPC分类号： H01L23/5384 , H01L21/486 , H01L23/481 , H01L23/5389 , H01L23/66 , H01L25/0652 , H01L2224/16225 , H01L2224/16227 , H01L2924/3011 , H05K3/403 , H05K3/4644 , H05K2201/09645 , H05K2201/09809 , H05K2201/09827
摘要： A via structure is obtained by etching a through-hole (3) in a substrate (1) on the via location and placing transmission lines (25) on declining or sloping sidewalls (8) of the hole (3). The lines (25) continue to conductors (17) on the other surface of the substrate (1) through vias (29) located in a free portion of a thin film structure at the bottom side of the substrate. The free portion is so strong and large, that several vias (29) can be made therein for connection to a plurality of parallel lines (25) forming e.g. a bus structure. The large free portion can be additionally supported by a thick support layer (33) applied on top of the layers in the hole (3). By applying an isolated ground plane (19) and a dielectric layer (23) between the substrate (1) and the transmission lines (25), the transmission lines on the sloping sidewalls (8) of the via hole structure can be made impedance matched. The sloping sidewalls (8) of the via hole can easily be obtained using a V-groove etch for a monocrystalline Si-substrate (1). The via structure obtained is especially well suited for data transmission buses, which do not need to reduce their transmission line density through the via structure.
摘要翻译：通过蚀刻通孔位置的基板（1）中的通孔（3）并将传输线（25）放置在孔（3）的下降或倾斜的侧壁（8）上来获得通孔结构。线（25）通过位于衬底底部的薄膜结构的自由部分中的通孔（29）继续在衬底（1）的另一个表面上的导体（17）。自由部分是如此强大和大，可以在其中制造几个通孔（29）以连接到多个平行线（25），形成例如总线结构。大的自由部分可以另外由施加在孔（3）中的层的顶部上的厚的支撑层（33）支撑。通过在衬底（1）和传输线（25）之间施加隔离的接地平面（19）和电介质层（23），可以使通孔结构的倾斜侧壁（8）上的传输线阻抗匹配。通过用于单晶Si衬底（1）的V沟蚀刻可以容易地获得通孔的倾斜侧壁（8）。获得的通孔结构特别适用于不需要通过通孔结构降低其传输线密度的数据传输总线。

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