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1. 发明申请

WO9424608A3 METHOD OF PREPARATION OF MASK FOR ION BEAM LITHOGRAPHY 审中-公开
标题翻译：用于离子束光刻制备掩模的方法
公开(公告)号：WO9424608A3
公开(公告)日：1994-12-08
申请号：PCT/US9403628
申请日：1994-04-04
申请人： TECHNION RES & DEV FOUNDATION , US HEALTH , YAHALOM JOSEPH , PECKERAR MARTIN
发明人： YAHALOM JOSEPH , PECKERAR MARTIN
IPC分类号： G03F1/20 , G03F
CPC分类号： G03F1/20
摘要： The invention consists of a method for the manufacture of an improved mask for ion beam lithography, comprising the steps of: (a) coating a substrate by an insulating layer; (b) opening a window on the front side of the substrate; (c) depositing an oxide layer on the front side of the substrate; (d) opening a portion of the insulating layer; (e) patterning the oxide layer by ion beam photoresist and etching techniques, and (f) removal of a portion of the substrate from the backside, thus leaving a stenciled oxide mask resting on the substrate frame. The mask produced is characterized by its durability, ensuring a membrane flatness and stiffness capable to prevent any feature displacement during its use.

2. 发明申请

WO2005065021A2 TEXTURING A SEMICONDUCTOR MATERIAL USING NEGATIVE POTENTIAL DISSOLUTION (NPD) 审中-公开
标题翻译：使用负极潜在溶解度（NPD）的纹理材料
公开(公告)号：WO2005065021A2
公开(公告)日：2005-07-21
申请号：PCT/IL2004001130
申请日：2004-12-15
申请人： TECHNION RES & DEV FOUNDATION , EIN-ELI YAIR , STAROSVETSKY DAVID , YAHALOM JOSEPH
发明人： EIN-ELI YAIR , STAROSVETSKY DAVID , YAHALOM JOSEPH
IPC分类号： B23H3/00 , H01L21/00
CPC分类号： H01L31/18 , C25F3/12 , H01L31/02363 , Y02E10/50
摘要： Texturing a semiconductor material using negative potential dissolution (NPD), by applying highly negative (cathodic) potentials during conditions of wet etching, and a textured semiconductor material formed therefrom. Semiconductor material is subjected to wet etching conditions, negative biasing at more negative than -60 V, and, specifically controlled and directed illumination by optically processed non-ambient light, resulting in significant increase in values of cathodic current density, and, rate and extent of texturing, of the semiconductor material as a function of time. As cut unpolished semiconductor material is subjected to wet etching conditions and negative biasing, during non-specifically controlled and directed illumination by unprocessed ambient light. Illumination of the as cut unpolished semiconductor material is not needed for increasing values of cathodic current density, and, rate and extent of the texturing, and therefore, upon type of textured as cut unpolished semiconductor material formed therefrom. Particularly applicable to manufacturing solar cells from semiconductor materials.
摘要翻译：使用负电位溶解（NPD），通过在湿蚀刻条件期间施加高负（阴极）电位和由其形成的织构化的半导体材料来纹理化半导体材料。半导体材料经受湿蚀刻条件，负偏压大于-60V，并且通过光学处理的非环境光特异性地控制和定向照明，导致阴极电流密度值的显着增加，以及速率和程度的纹理，作为时间的函数的半导体材料。在未经处理的环境光的非特异性控制和定向照明期间，切割未抛光的半导体材料经受湿蚀刻条件和负偏压。为了提高阴极电流密度的值，以及纹理化的速率和程度，因此不需要对切割的未抛光的半导体材料照明，因此，由其形成的纹理切割未抛光的半导体材料的类型。特别适用于从半导体材料制造太阳能电池。

3. 发明申请

WO2006086169A2 IMMERSION PROCESS FOR ELECTROPLATING APPLICATIONS 审中-公开
标题翻译：电镀应用的浸渍工艺
公开(公告)号：WO2006086169A2
公开(公告)日：2006-08-17
申请号：PCT/US2006003025
申请日：2006-01-31
申请人： APPLIED MATERIALS INC , HAFEZI HOOMAN , BEHNKE JOSEPH , ROSENFELD ARON , WEBB TIMOTHY R , YAHALOM JOSEPH , MCGUIRK CHRISTOPHER REISS
发明人： HAFEZI HOOMAN , BEHNKE JOSEPH , ROSENFELD ARON , WEBB TIMOTHY R , YAHALOM JOSEPH , MCGUIRK CHRISTOPHER REISS
IPC分类号： C25D5/18
CPC分类号： C25D5/18 , C25D5/34 , C25D7/123 , H01L21/2885 , H01L21/76877
摘要： A method for immersing a substrate into a plating solution. In one embodiment, the method includes applying a first waveform to the substrate as the substrate is being immersed into the plating solution, stopping the application of the first waveform to the substrate as soon as the substrate is fully immersed inside the plating solution, and applying a second waveform to the substrate prior to the substrate being situated into a plating position.
摘要翻译：将基板浸入电镀液中的方法。在一个实施例中，该方法包括当衬底浸入电镀溶液中时将第一波形施加到衬底，一旦衬底完全浸入电镀溶液中，就停止向衬底施加第一波形，并施加在衬底位于电镀位置之前的到衬底的第二波形。

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