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1. 发明申请

WO2016049231A1 ETCHING PROCESSES FOR SOLAR CELL FABRICATION 审中-公开
标题翻译：太阳能电池制造的蚀刻工艺
公开(公告)号：WO2016049231A1
公开(公告)日：2016-03-31
申请号：PCT/US2015/051786
申请日：2015-09-23
申请人： SUNPOWER CORPORATION
发明人： HARRINGTON, Scott , BALU, Venkatasubramani , WESTERBERG, Staffan , COUSINS, Peter John
IPC分类号： H01L31/18 , H01L21/306 , H01L31/04
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/035281 , H01L31/0747 , H01L31/075 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region.
摘要翻译：制造太阳能电池的方法可以包括在硅衬底上形成第一掺杂剂区域和在第一掺杂剂区域上形成氧化物区域。在一个实施例中，氧化物区域可以保护第一掺杂剂区域免受第一蚀刻工艺的影响。在一个实施例中，可以在硅衬底上形成第二掺杂剂区域，其中可以形成掩模以保护第一掺杂剂区域的第一部分免于第一蚀刻工艺。在一个实施例中，可以执行第一蚀刻工艺以暴露硅衬底和/或硅区域的部分。可以执行第二蚀刻工艺以形成分离太阳能电池的第一和第二掺杂区域的沟槽区域。可以进行第三蚀刻工艺以从太阳能电池去除污染物并去除氧化物区域的任何剩余部分。

2. 发明申请

WO2017173385A1 METALLIZATION OF SOLAR CELLS WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES 审中-公开
标题翻译：具有不同P型和N型区域结构的太阳能电池的金属化
公开(公告)号：WO2017173385A1
公开(公告)日：2017-10-05
申请号：PCT/US2017/025574
申请日：2017-03-31
申请人： SUNPOWER CORPORATION
发明人： SMITH, David D. , WEIDMAN, Timothy , HARRINGTON, Scott , BALU, Venkatasubramani
IPC分类号： H01L31/18 , H01L31/028 , H01L31/0216 , H01L31/0236 , H01L31/0224
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.
摘要翻译：描述了制造具有差异化的P型和N型区域架构的太阳能电池发射极区域的方法，以及所得到的太阳能电池。在一个示例中，背接触太阳能电池可以包括具有光接收表面和背表面的衬底。第一导电类型的第一多晶硅发射极区域设置在设置在基板背面上的第一薄介电层上。第二不同导电类型的第二多晶硅发射极区域设置在设置在衬底背面上的第二薄介电层上。第三薄介电层设置在第一多晶硅发射极区的暴露的外部上，并且横向设置在第一和第二多晶硅发射极区之间。第一导电接触结构设置在第一多晶硅发射区上。第二导电接触结构设置在第二多晶硅发射区上。还描述了金属化方法，包括用于形成第一和第二导电接触结构的蚀刻技术。

3. 发明申请

WO2017173383A1 TRI-LAYER SEMICONDUCTOR STACKS FOR PATTERNING FEATURES ON SOLAR CELLS 审中-公开
标题翻译：三层半导体堆栈用于图案化太阳能电池的特性
公开(公告)号：WO2017173383A1
公开(公告)日：2017-10-05
申请号：PCT/US2017/025571
申请日：2017-03-31
申请人： SUNPOWER CORPORATION
发明人： TRACY, Kieran Mark , SMITH, David D. , BALU, Venkatasubramani , MASAD, Asnat , WALDHAUER, Ann
IPC分类号： H01L31/0392 , H01L31/06 , H01L31/042 , H01L31/18
摘要： Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.
摘要翻译：本文描述了用于图案化太阳能电池上的特征的三层半导体堆叠以及所得到的太阳能电池。在一个示例中，太阳能电池包括衬底。半导体结构设置在衬底上方。该半导体结构包括直接设置在第一半导体层上的P型半导体层。第三半导体层直接设置在P型半导体层上。第三半导体层的最外边缘从第一半导体层的最外边缘横向凹入一个宽度。 P型半导体层的最外边缘从第三半导体层的最外边缘向第三半导体层的最外边缘倾斜。导电接触结构电连接到半导体结构。

4. 发明申请

WO2016032856A2 SEQUENTIAL ETCHING TREATMENT FOR SOLAR CELL FABRICATION 审中-公开
标题翻译：连续蚀刻处理太阳能电池制造
公开(公告)号：WO2016032856A2
公开(公告)日：2016-03-03
申请号：PCT/US2015/046175
申请日：2015-08-20
申请人： SUNPOWER CORPORATION , TOTAL MARKETING SERVICES
发明人： HARRINGTON, Scott , BALU, Venkatasubramani , MONTESDEOCA SANTANA, Amada Lorena
IPC分类号： H01L31/18 , H01L31/0392 , H01L31/02
CPC分类号： H01L21/02019 , H01L21/02052 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of processing a silicon substrate can include etching the silicon substrate with a first etchant having a first concentration and etching with a second etchant having a second concentration. In an embodiment, the second concentration of the second etchant can be greater than the first concentration of the first etchant. In one embodiment, the first etchant can be a different type of etchant than the second etchant. In an embodiment, the first and second etchant can be the same type of etchant. In some embodiments the silicon substrate can be cleaned with a first cleaning solution to remove contaminants from the silicon substrate prior to etching with the first etchant. In an embodiment, the silicon substrate can be cleaned with a second cleaning solution after etching the silicon substrate with a second etchant.
摘要翻译：处理硅衬底的方法可以包括用具有第一浓度的第一蚀刻剂蚀刻硅衬底并且用具有第二浓度的第二蚀刻剂蚀刻硅衬底。在一个实施例中，第二蚀刻剂的第二浓度可以大于第一蚀刻剂的第一浓度。在一个实施例中，第一蚀刻剂可以是与第二蚀刻剂不同类型的蚀刻剂。在一个实施例中，第一和第二蚀刻剂可以是相同类型的蚀刻剂。在一些实施例中，硅衬底可以用第一清洁溶液清洁以在用第一刻蚀剂刻蚀之前从硅衬底去除污染物。在一个实施例中，可以在用第二蚀刻剂蚀刻硅衬底之后用第二清洁溶液清洁硅衬底。

5. 发明申请

WO2015094987A1 SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES 审中-公开
标题翻译：具有差异化P型和N型区域结构的太阳能电池发射区制造
公开(公告)号：WO2015094987A1
公开(公告)日：2015-06-25
申请号：PCT/US2014/070163
申请日：2014-12-12
申请人： SUNPOWER CORPORATION
发明人： RIM, Seung Bum , SMITH, David D. , QIU, Taiqing , WESTERBERG, Staffan , TRACY, Kieran Mark , BALU, Venkatasubramani
IPC分类号： H01L31/049
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/03682 , H01L31/068 , H01L31/0682 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/182 , H01L31/202 , H01L31/208 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.
摘要翻译：描述了具有差异化的P型和N型区域结构的太阳能电池发射极区域的制造方法以及所得到的太阳能电池。在一个示例中，背接触太阳能电池包括具有受光面和背面的基板。第一导电类型的第一多晶硅发射极区域设置在设置在基板的背面上的第一薄介电层上。具有第二不同导电类型的第二多晶硅发射极区域设置在设置在基板的背面上的第二薄介电层上。第三薄介电层横向地设置在第一和第二多晶硅发射极区之间。第一导电接触结构设置在第一多晶硅发射极区域上。第二导电接触结构设置在第二多晶硅发射极区域上。

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