专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2017155393A1 SOLAR CELL WITH DOPED POLYSILICON SURFACE AREAS AND METHOD FOR MANUFACTURING THEREOF 审中-公开
标题翻译：具有掺杂多晶硅表面区域的太阳能电池及其制造方法
公开(公告)号：WO2017155393A1
公开(公告)日：2017-09-14
申请号：PCT/NL2017/050138
申请日：2017-03-07
申请人： STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND
发明人： GEERLIGS, Lambert Johan , BRONSVELD, Paula Catharina Petronella , WU, Yu
IPC分类号： H01L31/0368 , H01L31/068 , H01L31/072 , H01L31/18
CPC分类号： H01L31/182 , H01L31/03682 , H01L31/0682 , H01L31/072 , H01L31/1804 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a front floating emitter type solar cell includes providing a silicon substrate (10) of a first or second conductivity type with a front surface (13) and a rear surface (11); creating a tunneling oxide layer (12) on the rear surface of the silicon substrate; depositing a polysilicon layer (14) on at least the rear surface; creating a doped area of the first conductivity type in an area part of the polysilicon layer on the rear surface; forming in or on the front surface a doped layer (23) of the second conductivity type opposite to the first conductivity type. In the area part of the polysilicon layer on the rear surface, a concentration of the impurity of the first conductivity type is larger than a concentration of the impurity of the second conductivity type, and the area part of the polysilicon layer on the rear surface has conductivity of the first conductivity type.
摘要翻译：一种用于制造前浮式发射体型太阳能电池的方法，包括：提供具有前表面（13）和后表面（11）的第一导电类型或第二导电类型的硅衬底（10）; 在硅衬底的后表面上形成隧穿氧化物层（12）在至少所述后表面上沉积多晶硅层（14）; 在后表面上的多晶硅层的区域部分中产生第一导电类型的掺杂区域; 在前表面中或上形成与第一导电类型相反的第二导电类型的掺杂层（23）。在后表面上的多晶硅层的区域部分中，第一导电类型的杂质的浓度大于第二导电类型的杂质的浓度，并且后表面上的多晶硅层的面积部分具有第一种导电类型的导电性。

2. 发明申请

WO2018117832A1 METHOD FOR MANUFACTURING PHOTOVOLTAIC CELLS WITH A REAR SIDE POLYSILICON PASSIVATING CONTACT 审中-公开
公开(公告)号：WO2018117832A1
公开(公告)日：2018-06-28
申请号：PCT/NL2017/050862
申请日：2017-12-21
申请人： STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND
发明人： GEERLIGS, Lambert Johan , KOPPES, Martien , WU, Yu , STODOLNY, Maciej Krzyszto , MARTIJN, Lenes
IPC分类号： H01L31/0368 , H01L31/068 , H01L31/18 , H01L31/0745
摘要： A method for manufacturing a photovoltaic cell from a substrate (2) having a front side (4), a back side (6) and an edge (8). A carrier selective contact structure (4a) of a first type is provided on at least a part of the front side (4). A stack (10) having a thin oxide layer covered by a polysilicon layer is applied, wherein the stack (10) is applied to the back side (6) and the front side (4) of the substrate (2), and possibly also on edge (8). The stack (10) of thin oxide layer and polysilicon layer on the front side (4) is then removed.

3. 发明申请

WO2017105248A1 HYBRID TANDEM SOLAR CELL 审中-公开
标题翻译：混合串联太阳能电池
公开(公告)号：WO2017105248A1
公开(公告)日：2017-06-22
申请号：PCT/NL2016/050892
申请日：2016-12-19
申请人： STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND
发明人： GEERLIGS, Lambert Johan , WU, Yu , ZHANG, Dong , VAN ROOSMALEN, Johannes Adrianus Maria , LUXEMBOURG, Stefan Libertus , VEENSTRA, Siegfried Christiaan
IPC分类号： H01L31/078 , H01L27/30 , H01L31/18
CPC分类号： H01L31/078 , H01L27/302 , H01L31/043 , H01L31/1868 , H01L51/4213 , H01L51/445 , Y02E10/50
摘要： A tandem solar cell (3) includes a top solar cell (210) and a bottom solar cell (230). The top solar cell and the bottom solar cell each have a respective front surface and a rear surface, with the respective front surfaces being adapted for facing a radiation source during use. The top solar cell is arranged with its rear surface overlying the front surface of the bottom solar cell. The top solar cell includes a photovoltaic absorber layer (212) with a bandgap greater than that of crystalline silicon. The bottom solar cell includes a crystalline silicon substrate (232). On at least a portion of the front surface of the bottom solar cell a passivating layer stack (236) is disposed which includes a thin dielectric film (238) and a secondary layer (240) of either selective carrier extracting material or polysilicon. The thin dielectric film is arranged between the silicon substrate and the secondary layer.
摘要翻译：串联太阳能电池（3）包括顶部太阳能电池（210）和底部太阳能电池（230）。顶部太阳能电池和底部太阳能电池各自具有各自的前表面和后表面，其中各自的前表面适于在使用期间面对辐射源。顶部太阳能电池的背面覆盖在底部太阳能电池的前表面上。顶部太阳能电池包括带隙大于晶体硅的光伏吸收层（212）。底部太阳能电池包括晶体硅衬底（232）。在底部太阳能电池的前表面的至少一部分上设置钝化层堆叠（236），其包括薄介电膜（238）和选择性载流子提取材料或多晶硅的第二层（240）。薄介电膜被安排在硅衬底和第二层之间。

4. 发明申请

WO2014148905A1 Solar cell and method for manufacturing such a solar cell. 审中-公开
标题翻译：太阳能电池及其制造方法。
公开(公告)号：WO2014148905A1
公开(公告)日：2014-09-25
申请号：PCT/NL2014/050174
申请日：2014-03-21
申请人： STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND
发明人： BRONSVELD, Paula Catharina Petronella , GEERLIGS, Lambert Johan , STODOLNY, Maciej , WU, Yu
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/0747 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/022425 , H01L31/022441 , H01L31/028 , H01L31/035272 , H01L31/03682 , H01L31/03762 , H01L31/0682 , H01L31/0747 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a semiconductor substrate, that has a front side surface for receiving radiation and a back-side surface provided with a first junction structure in a first area portion of the substrate and with a second junction structure in a second area portion of the substrate. The second area portion borders on the first area portion. The first junction structure includes a first conductivity type semiconductor layer covering the first area portion. The second junction structure includes a second conductivity type semiconductor layer covering the second area portion. The second conductivity type semiconductor layer of the second junction structure partially overlaps the first conductivity type semiconductor layer of the first junction structure,with the overlapping portion of the second conductivity type semiconductor layer being above a portion of the first conductivity type semiconductor layer while separated by a first dielectric layer therebetween. The portion of the first conductivity type semiconductor layer under the overlapping portion of the second conductivity type semiconductor layer is in direct contact with the semiconductor surface of the substrate.
摘要翻译：太阳能电池包括半导体衬底，其具有用于接收辐射的前侧表面和在衬底的第一区域部分中设置有第一结结构的背面，并且在第二区域部分中具有第二接合结构基质。第二区域部分与第一区域部分相邻。第一结结构包括覆盖第一区域部分的第一导电类型半导体层。第二结结构包括覆盖第二区域部分的第二导电类型半导体层。第二结结构的第二导电类型半导体层与第一结结构的第一导电类型半导体层部分地重叠，第二导电类型半导体层的重叠部分在第一导电类型半导体层的一部分之上，同时被第其间的第一电介质层。第二导电类型半导体层的重叠部分之下的第一导电类型半导体层的部分与衬底的半导体表面直接接触。

5. 发明申请

WO2013006048A1 PHOTOVOLTAIC CELL WITH WRAP THROUGH CONNECTIONS 审中-公开
标题翻译：具有通过连接缠绕的光电池
公开(公告)号：WO2013006048A1
公开(公告)日：2013-01-10
申请号：PCT/NL2012/050467
申请日：2012-07-02
申请人： STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND , WU, Yu , GEERLIGS, Lambert Johan , VAN ROOSMALEN, Johannes Adrianus Maria , KOMATSU, Yuji , GUILLEVIN, Nicolas
发明人： WU, Yu , GEERLIGS, Lambert Johan , VAN ROOSMALEN, Johannes Adrianus Maria , KOMATSU, Yuji , GUILLEVIN, Nicolas
IPC分类号： H01L31/0224
CPC分类号： H01L31/02245 , H01L31/022441 , H01L31/022458 , H01L31/0682 , Y02E10/50 , Y02E10/547 , Y02E10/548
摘要： Known photovoltaic cells with wrap through connections have output terminals of both polarities on its back surface, one of which is coupled to the front surface via the wrap through connections. The invented solar cell is manufactured by creating an emitter layer on the back surface. Electrode material is applied in mutually separate first and second areas on the back surface. The electrode material in the first area contacts the emitter. The second area covers a surrounding of a hole that provides for the connection on the back surface. The electrode material in the second area lies on the emitter and around the second area the emitter is interrupted by a trench. On the front surface a further area of electrode material is applied over the hole. If necessary the electrode material in the second area on the back surface is applied on a supporting surface that is substantially electrically isolated from current flowing laterally through the emitter layer underneath the first area.
摘要翻译：具有包裹连接的已知光伏电池在其后表面上具有两个极性的输出端子，其中一个通过连接件连接到前表面。本发明的太阳能电池通过在背面形成发射极层来制造。电极材料被施加在后表面上相互分离的第一和第二区域中。第一区域中的电极材料接触发射极。第二个区域覆盖了一个提供背面连接的孔的周围。第二区域中的电极材料位于发射体上并且在第二区域周围，发射体被沟槽中断。在前表面上，另外的电极材料区域被施加在孔上。如果需要，后表面上的第二区域中的电极材料被施加在支撑表面上，该支撑表面基本上与沿着第一区域下方的横向流过发射极层的电流隔离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式