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1. 发明申请

WO2010015878A3 PROCESS FOR JOINING AND SEPARATING SUBSTRATES 审中-公开
标题翻译：加工和分离基板的工艺
公开(公告)号：WO2010015878A3
公开(公告)日：2010-04-15
申请号：PCT/IB2008003101
申请日：2008-09-08
申请人： SOITEC SILICON ON INSULATOR , PHILIPS LUMILEDS LIGHTING CO , FAURE BRUCE , LETERTRE FABRICE , WIERER JONATHAN J JR
发明人： FAURE BRUCE , LETERTRE FABRICE , WIERER JONATHAN J JR
IPC分类号： H01L21/762 , H01L21/268 , H01L25/00 , H01L31/18 , H01L33/00
CPC分类号： H01L21/76251 , H01L21/6835 , H01L31/1892 , H01L33/0079 , H01L2221/68327 , H01L2221/68363 , H01L2221/68368 , H01L2221/68381 , Y02E10/50
摘要： The invention relates to a process for modifying a substrate (10) comprising: (a) providing an initial substrate (10) having a face (10b) for bonding and an opposing face (10r); (b) providing a support substrate (25); wherein either the bonding face (10b) of the initial substrate (10), and/or a face of the support substrate (25), is provided with an electromagnetic radiation absorbing layer (24), wherein the support substrate (25) is substantially transparent to a wavelength of electromagnetic radiation (c) performing bonding to join the bonding face (10b) of the initial substrate (10) to the support substrate (25) via the electromagnetic radiation absorbing layer (24); (e) carrying out irradiation of the electromagnetic radiation absorbing layer (24) through the substantially transparent support substrate (25) to induce separation of the support substrate (25).
摘要翻译：本发明涉及一种用于修改衬底（10）的方法，包括：（a）提供具有用于结合的面（10b）和相对面（10r）的初始衬底（10）; （b）提供支撑衬底（25）; 其中所述初始衬底（10）的接合面（10b）和/或所述支撑衬底（25）的表面中的任一个设置有电磁辐射吸收层（24），其中所述支撑衬底（25）基本上对电磁辐射的波长透明（c）进行接合以经由电磁辐射吸收层（24）将初始衬底（10）的接合面（10b）连接到支撑衬底（25）; （e）通过所述基本透明的支撑衬底（25）进行所述电磁辐射吸收层（24）的照射以引起所述支撑衬底（25）的分离。

2. 发明申请

WO2010015302A3 RELAXATION AND TRANSFER OF STRAINED LAYERS 审中-公开
标题翻译：松弛和传输应变层
公开(公告)号：WO2010015302A3
公开(公告)日：2010-05-14
申请号：PCT/EP2009004792
申请日：2009-07-02
申请人： SOITEC SILICON ON INSULATOR , LETERTRE FABRICE , FAURE BRUCE , GUENARD PASCAL , KRAMES MIKE , MCLAURIN NELSON , GARDNER NATE
发明人： LETERTRE FABRICE , FAURE BRUCE , GUENARD PASCAL , KRAMES MIKE , MCLAURIN NELSON , GARDNER NATE
IPC分类号： H01L21/20 , H01L21/58 , H01L21/762 , H01L31/18 , H01L33/00
CPC分类号： H01L33/0079 , H01L21/6835 , H01L31/1848 , H01L31/1852 , H01L31/1892 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L2221/68359 , Y02E10/544 , Y02P70/521
摘要： The present invention relates a method for the formation of at least partially relaxed strained material on a target substrate, comprising the subsequently performed steps of forming islands from a strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment and transferring the at least partially relaxed strained material islands to the target substrate.
摘要翻译：本发明涉及一种用于在目标衬底上形成至少部分松弛的应变材料的方法，包括随后执行的步骤：从中间衬底上的应变材料层形成岛，至少部分地将应变材料岛松弛第一热处理并将至少部分松弛的应变材料岛转移到目标衬底。

3. 发明申请

WO2010094371A3 RELAXATION AND TRANSFER OF STRAINED MATERIAL LAYERS 审中-公开
标题翻译：应变材料层的松弛和转移
公开(公告)号：WO2010094371A3
公开(公告)日：2011-11-24
申请号：PCT/EP2010000090
申请日：2010-01-11
申请人： SOITEC SILICON ON INSULATOR , LETERTRE FABRICE , FAURE BRUCE , GUENARD PASCAL
发明人： LETERTRE FABRICE , FAURE BRUCE , GUENARD PASCAL
IPC分类号： H01L21/20 , C30B29/38 , C30B29/40 , C30B33/02 , C30B33/06 , H01L21/02 , H01L21/762
CPC分类号： H01L21/02664 , C30B29/403 , C30B33/02 , C30B33/06 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/762 , H01L21/76254
摘要： The present invention relates a method for the formation of an at least partially relaxed strained material layer, the method comprising the steps of providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment.
摘要翻译：本发明涉及形成至少部分松弛的应变材料层的方法，该方法包括以下步骤：提供种子基底; 图案化种子基底; 在图案化种子基底上生长应变材料层; 将所述应变材料层从所述图案化种子衬底转移到中间衬底; 并通过热处理至少部分地松弛应变材料层。

4. 发明申请

WO2009092506A2 A METHOD OF FABRICATING A COMPOSITE STRUCTURE WITH A STABLE BONDING LAYER OF OXIDE 审中-公开
标题翻译：一种用稳定的氧化物粘结层制造复合结构的方法
公开(公告)号：WO2009092506A2
公开(公告)日：2009-07-30
申请号：PCT/EP2008068311
申请日：2008-12-29
申请人： SOITEC SILICON ON INSULATOR , FAURE BRUCE , MARCOVECCHIO ALEXANDRA
发明人： FAURE BRUCE , MARCOVECCHIO ALEXANDRA
IPC分类号： H01L21/762 , H01L21/20 , H01L21/30 , H01L27/01
CPC分类号： B32B37/14 , H01L21/76254 , H01L33/0079 , H01L2924/0002 , Y10T156/10 , Y10T428/265 , H01L2924/00
摘要： The invention concerns a method of fabricating a composite structure (14) comprising at least one thin film (4) bonded to a support substrate (10), a bonding layer of oxide (12) being formed by deposition between the support substrate (10) and the thin film (4). The thin film and the support substrate have a mean thermal expansion coefficient of 7 X 10-6 K-1 or more. The bonding layer of oxide (12) is formed by low pressure chemical vapor deposition (LPCVD) of a layer of oxide on the bonding face of the support substrate (10) and/or on the bonding face of the thin film (4). The thin film has a thickness of 5 micrometers or less while the thickness of the layer of oxide (12) is equal to or greater than the thickness of the thin film (4).
摘要翻译：本发明涉及制造复合结构（14）的方法，所述复合结构（14）包括结合到支撑衬底（10）的至少一个薄膜（4），氧化物结合层（12）通过沉积在支撑衬底（10）和薄膜（4）。薄膜和支撑衬底的平均热膨胀系数为7×10 -6 K -1或更高。氧化物结合层（12）通过在支撑衬底（10）的结合面上和/或在薄膜（4）的结合面上的氧化物层的低压化学气相沉积（LPCVD）来形成。薄膜的厚度为5微米或更小，而氧化物层（12）的厚度等于或大于薄膜（4）的厚度。

5. 发明申请

WO2007110515A8 METHOD OF DETACHING A THIN FILM BY MELTING PRECIPITATES 审中-公开
标题翻译：通过熔化沉淀法分离薄膜的方法
公开(公告)号：WO2007110515A8
公开(公告)日：2009-02-05
申请号：PCT/FR2007000534
申请日：2007-03-28
申请人： COMMISSARIAT ENERGIE ATOMIQUE , SOITEC SILICON ON INSULATOR , TAUZIN AURELIE , FAURE BRUCE , GARNIER ARNAUD
发明人： TAUZIN AURELIE , FAURE BRUCE , GARNIER ARNAUD
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method of fabricating a thin film from a substrate comprises the following steps: (1) implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate; (2) optional intimate contacting of this face of the substrate with a stiffener; and (3) detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.
摘要翻译：从衬底制造薄膜的方法包括以下步骤：（1）将诸如非气态物质的离子（例如镓）注入例如由硅制成的衬底中，注入条件并选择该物质根据基材的材料，使得形成一定范围的析出物，分布在一层内，这些沉淀物由熔点低于基底的固相制成; （2）衬底的该表面与加强件的任意的紧密接触; 和（3）通过在沉淀物处于液相的条件下施加机械和/或化学分解应力，通过在沉淀层处破碎基底来分离薄膜。

6. 发明申请

WO2007110515A3 METHOD OF DETACHING A THIN FILM BY MELTING PRECIPITATES 审中-公开
标题翻译：通过熔化沉淀法分离薄膜的方法
公开(公告)号：WO2007110515A3
公开(公告)日：2008-01-10
申请号：PCT/FR2007000534
申请日：2007-03-28
申请人： COMMISSARIAT ENERGIE ATOMIQUE , SOITEC SILICON ON INSULATOR , TAUZIN AURELIE , FAURE BRUCE , GARNIER ARNAUD
发明人： TAUZIN AURELIE , FAURE BRUCE , GARNIER ARNAUD
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method of fabricating a thin film from a substrate comprises the following steps: (1) implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate; (2) optional intimate contacting of this face of the substrate with a stiffener; and (3) detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.
摘要翻译：从衬底制造薄膜的方法包括以下步骤：（1）将诸如非气态物质的离子（例如镓）注入例如由硅制成的衬底中，注入条件和该物种被选择根据基材的材料，使得形成一定范围的析出物，分布在一层内，这些沉淀物由熔点低于基底的固相制成; （2）衬底的该表面与加强件的任意的紧密接触; 和（3）通过在沉淀物处于液相的条件下施加机械和/或化学分解应力，通过在沉淀层处破碎基底来分离薄膜。

7. 发明申请

WO2010015301A1 PASSIVATION OF ETCHED SEMICONDUCTOR STRUCTURES 审中-公开
标题翻译：蚀刻半导体结构的钝化
公开(公告)号：WO2010015301A1
公开(公告)日：2010-02-11
申请号：PCT/EP2009004791
申请日：2009-07-02
申请人： S O I TEC SILICON , FAURE BRUCE , GUENARD PASCAL
发明人： FAURE BRUCE , GUENARD PASCAL
IPC分类号： H01L21/762 , H01L21/20 , H01L21/324
CPC分类号： H01L21/76251 , H01L21/2007 , H01L33/44 , H01S5/3072
摘要： The present invention relates to a method for passivation of a semiconductor structure, comprising the steps providing at least one first material layer; forming at least one second material layer that is to be patterned above the first material layer; forming a diffusion barrier layer between the at least one second material layer and the at least one first material layer thereby forming a multilayer stack and patterning, in particular, etching, the at least one second material layer down to but not completely through the diffusion barrier layer and without exposing portions of the at least one first material layer such that diffusion of material of the at least one first material layer through the diffusion barrier layer during a subsequent heat treatment of the multilayer stack is substantially prevented. The invention also relates to a method for passivation of a semiconductor structure, comprising the steps providing a multilayer stack comprising at least one buried layer formed below a second material layer; patterning, in particular, etching, the surface of the multilayer stack through the second material layer thereby exposing portions of the at least one buried layer and depositing a diffusion barrier layer at least on the exposed portions of the at least one buried layer such that diffusion of material of the at least one buried layer through the diffusion barrier layer during a subsequent heat treatment of the multilayer stack is substantially prevented.
摘要翻译：本发明涉及半导体结构的钝化方法，包括提供至少一个第一材料层的步骤; 在所述第一材料层上方形成至少一层待图案化的第二材料层; 在所述至少一个第二材料层和所述至少一个第一材料层之间形成扩散阻挡层，从而形成多层堆叠并且特别地图案化蚀刻，所述至少一个第二材料层向下但不完全通过所述扩散阻挡层并且不暴露所述至少一个第一材料层的部分，从而基本上防止了在所述多层堆叠的后续热处理期间所述至少一个第一材料层的材料的扩散通过所述扩散阻挡层。本发明还涉及一种用于钝化半导体结构的方法，包括提供多层堆叠的步骤，所述多层叠层包括形成在第二材料层下面的至少一个掩埋层; 图案化，特别是蚀刻，通过第二材料层的多层堆叠的表面，从而暴露至少一个掩埋层的部分，并且至少在至少一个掩埋层的暴露部分上沉积扩散阻挡层，使得扩散基本上防止了在多层堆叠的后续热处理期间通过扩散阻挡层的至少一个掩埋层的材料。

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