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1. 发明申请

WO2008047734A1 METHOD FOR MANUFACTURING LIGHT-EMITTING MATERIAL 审中-公开
标题翻译：制造发光材料的方法
公开(公告)号：WO2008047734A1
公开(公告)日：2008-04-24
申请号：PCT/JP2007/070019
申请日：2007-10-05
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , SAKATA, Junichiro , YAMAMOTO, Yoshiaki , TOYOSUMI, Yayoi
发明人： SAKATA, Junichiro , YAMAMOTO, Yoshiaki , TOYOSUMI, Yayoi
IPC分类号： C09K11/08 , C09K11/56
CPC分类号： C09K11/641
摘要： There has been a problem in that kinds of conventional light-emitting materials are not sufficient; therefore, choices of materials and manufacturers of light emitting materials are limited, resulting in an expensive light-emitting device. The present invention provides a novel method for manufacturing a light-emitting material suitable for mass production that can be manufactured at a low cost, and a novel light-emitting material which can provide light emission with high intensity. A mixture in which CuAlS2 is added in a small amount into ZnS as a base material is put in a reaction container. Then, the reaction container is hermetically sealed and the mixture is baked. Note that the reaction container is preferably hermetically sealed in a state where a reduced pressure is held in the reaction container. Further, in a light-emitting element using a light-emitting material obtained, electroluminescence with high luminance can be obtained.
摘要翻译：存在这种常规发光材料种类不足的问题。因此，发光材料的材料和制造商的选择受到限制，导致昂贵的发光装置。本发明提供了可以低成本制造适合于批量生产的发光材料的新型制造方法，以及能够提供高强度发光的新颖的发光材料。将CuAlS 2以少量添加到作为基材的ZnS中的混合物放入反应容器中。然后，将反应容器密封并将混合物烘烤。注意，反应容器优选在反应容器中保持减压的状态下气密密封。此外，在使用得到的发光材料的发光元件中，可以获得高亮度的电致发光。

2. 发明申请

WO2007091500A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：发光元件，发光装置和电子装置
公开(公告)号：WO2007091500A1
公开(公告)日：2007-08-16
申请号：PCT/JP2007/051867
申请日：2007-01-30
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , SAKATA, Junichiro , YAMAMOTO, Yoshiaki , KAWAKAMI, Takahiro , YOKOYAMA, Kohei , KATAYAMA, Miki , MATSUBARA, Rie
发明人： SAKATA, Junichiro , YAMAMOTO, Yoshiaki , KAWAKAMI, Takahiro , YOKOYAMA, Kohei , KATAYAMA, Miki , MATSUBARA, Rie
IPC分类号： H05B33/14 , C09K11/08 , C09K11/56 , C09K11/58 , C09K11/62
CPC分类号： C09K11/565 , C09K11/582 , C09K11/584 , C09K11/621 , H01L33/28 , H05B33/14
摘要： A light emitting element is provided, which comprises a pair of electrodes, a p-type semiconductor layer, and an n-type semiconductor layer. The p-type semiconductor layer and the n-type semiconductor layer are interposed between the pair of electrodes. The p-type semiconductor layer includes a first sulfide, and the n-type semiconductor layer includes a second sulfide. At least one of the p-type semiconductor layer and the n-type semiconductor layer includes a light emitting center.
摘要翻译：提供了一种发光元件，其包括一对电极，p型半导体层和n型半导体层。 p型半导体层和n型半导体层插入在该对电极之间。 p型半导体层包括第一硫化物，n型半导体层包括第二硫化物。 p型半导体层和n型半导体层中的至少一个包括发光中心。

3. 发明申请

WO2007086310A1 LIGHT EMITTING MATERIAL, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：发光材料，发光装置和电子装置
公开(公告)号：WO2007086310A1
公开(公告)日：2007-08-02
申请号：PCT/JP2007/050742
申请日：2007-01-12
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , SAKATA, Junichiro , KAWAKAMI, Takahiro , YAMAMOTO, Yoshiaki , KATAYAMA, Miki , YOKOYAMA, Kohei
发明人： SAKATA, Junichiro , KAWAKAMI, Takahiro , YAMAMOTO, Yoshiaki , KATAYAMA, Miki , YOKOYAMA, Kohei
IPC分类号： C09K11/56 , C09K11/00 , C09K11/54 , C09K11/62 , C09K11/64 , C09K11/78 , C09K11/84 , C09K11/88 , H05B33/14 , H05B33/22
CPC分类号： C09K11/565 , C09K11/54 , C09K11/567 , C09K11/621 , C09K11/7701 , C09K11/883 , H05B33/14
摘要： An object is to provide a novel light emitting material. Another object is to provide a light emitting device and an electronic device with reduced power consumption. Still another object is to provide a light emitting device and an electronic device which can be manufactured at low cost. Provided is a light emitting element including a base material, a first impurity element, a second impurity element, and a third impurity element. The base material is one of ZnS, CdS, CaS, Y 2 S 3 , Ga 2 S 3 , SrS, BaS, ZnO, Y 2 O 3 , AlN, GaN, InN, ZnSe, ZnTe, and SrGa 2 S 4 ; the first impurity element is any of Cu, Ag, Au, Pt, and Si; the second impurity element is any of F, Cl, Br, I, B, Al, Ga, In, and Tl; and the third impurity element is any of Li, Na, K, Rb, Cs, N, P, As, Sb, and Bi.
摘要翻译：目的是提供一种新颖的发光材料。另一个目的是提供一种具有降低功耗的发光器件和电子器件。另一个目的是提供一种可以以低成本制造的发光器件和电子器件。提供了包括基材，第一杂质元素，第二杂质元素和第三杂质元素的发光元件。基体材料是ZnS，CdS，CaS，Y 2 S 3，Ga 2 S 3，N 3， SrS，BaS，ZnO，Y 2 O 3，AlN，GaN，InN，ZnSe，ZnTe和SrGa 2 S 4 ; 第一杂质元素是Cu，Ag，Au，Pt和Si中的任一种; 第二杂质元素是F，Cl，Br，I，B，Al，Ga，In和Tl中的任一种; 并且第三杂质元素是Li，Na，K，Rb，Cs，N，P，As，Sb和Bi中的任一种。

4. 发明申请

WO2007099882A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE 审中-公开
标题翻译：发光元件，发光装置和电子装置
公开(公告)号：WO2007099882A1
公开(公告)日：2007-09-07
申请号：PCT/JP2007/053444
申请日：2007-02-19
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , SAKATA, Junichiro , YOKOYAMA, Kohei , YAMAMOTO, Yoshiaki , KAWAKAMI, Takahiro
发明人： SAKATA, Junichiro , YOKOYAMA, Kohei , YAMAMOTO, Yoshiaki , KAWAKAMI, Takahiro
IPC分类号： H05B33/14 , C09K11/06 , C09K11/62 , C09K11/64
CPC分类号： C09K11/621 , C09K11/641 , C09K11/881 , H05B33/14
摘要： A light emitting element that can be driven at a low voltage is provided. Further, a light emitting device and an electronic device with reduced power consumption are provided. A light emitting element is provided that includes a substrate 100, and a first electrode 101, a first insulating layer 102, a light emitting layer 103, a second insulating layer 104, and a second electrode 105, which are over the substrate 100. The light emitting layer 103 includes a compound ABC 2 , referred to as a 'chalcopyrite' (wherein A is Cu or Ag, B is Al, Ga, or In, and C is S, Se, or Te). By employing such a structure, a light emitting element that can be driven at a low voltage can be provided.
摘要翻译：提供可以以低电压驱动的发光元件。此外，提供了具有降低的功耗的发光装置和电子装置。提供了一种发光元件，其包括基板100，以及位于基板100上方的第一电极101，第一绝缘层102，发光层103，第二绝缘层104和第二电极105。发光层103包括称为“黄铜矿”（其中A为Cu或Ag，B为Al，Ga或In，C为S，Se或Te的化合物ABC 2 ）。通过采用这种结构，可以提供能够以低电压驱动的发光元件。

5. 发明申请

WO2007099881A1 LIGHT EMITTING MATERIAL, LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE 审中-公开
标题翻译：发光材料，发光元件，发光装置和电子设备
公开(公告)号：WO2007099881A1
公开(公告)日：2007-09-07
申请号：PCT/JP2007/053442
申请日：2007-02-19
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , SAKATA, Junichiro , YAMAMOTO, Yoshiaki , KAWAKAMI, Takahiro , AOYAMA, Tomoya
发明人： SAKATA, Junichiro , YAMAMOTO, Yoshiaki , KAWAKAMI, Takahiro , AOYAMA, Tomoya
IPC分类号： C09K11/56 , C09K11/00 , C09K11/54 , C09K11/62 , C09K11/64 , C09K11/78 , C09K11/84 , H05B33/14
CPC分类号： H05B33/145
摘要： The present invention provides a light emitting material having high electric conductivity, and further a light emitting element which can be driven at low voltage. Light emitting devices and electronic devices with reduced power consumption can also be provided. A light emitting element including a light emitting material is provided in which a first electrode 101, a first insulating layer 102, a light emitting layer 103, a second insulating layer 104 and a second electrode 105 are provided over a first electrode 101, the light emitting layer 103 includes an inorganic compound that is any of a sulfide, a nitride and an oxide as a base material; at least one element selected from the group consisting of copper, silver, aluminum, fluorine and chlorine, as a luminescent center material; manganese; and either gallium phosphide or gallium antimonide.
摘要翻译：本发明提供一种具有高导电性的发光材料，并且还提供一种能够以低电压驱动的发光元件。也可以提供具有降低功耗的发光装置和电子装置。提供了包括发光材料的发光元件，其中第一电极101，第一绝缘层102，发光层103，第二绝缘层104和第二电极105设置在第一电极101上，光发光层103包括作为基材的硫化物，氮化物和氧化物中的任一种的无机化合物; 选自铜，银，铝，氟和氯的至少一种元素作为发光中心材料; 锰; 和磷化镓或锑化镓。

6. 发明申请

WO2007099783A1 LIGHT-EMITTING MATERIAL, LIGHT-EMITTING DEVICE, AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：发光材料，发光装置和电子器具
公开(公告)号：WO2007099783A1
公开(公告)日：2007-09-07
申请号：PCT/JP2007/052791
申请日：2007-02-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YOKOYAMA, Kohei , YAMAMOTO, Yoshiaki , SAKATA, Junichiro , KAWAKAMI, Takahiro
发明人： YOKOYAMA, Kohei , YAMAMOTO, Yoshiaki , SAKATA, Junichiro , KAWAKAMI, Takahiro
IPC分类号： C09K11/08 , C09K11/00 , C09K11/56 , H05B33/14
CPC分类号： C09K11/612 , H05B33/14
摘要： It is an object of the present invention to provide a light-emitting material with high light emission intensity. It is another object to provide a light-emitting element with high light emission efficiency. Moreover, it is another object to provide a light-emitting device and an electronic appliance with reduced power consumption. A light-emitting material contains at least a light-emitting substance, a base material, and an additive which is an element belonging to group 14 of the periodic table or a compound containing two or more kinds of elements belonging to group 14, or a compound containing at least two or more kinds of elements each belonging to a different group chosen from group 13, group 14, and group 15. Due to the light-emitting material, a light-emitting element and an electronic appliance which has high light emission efficiency and can be driven at a low voltage can be obtained.
摘要翻译：本发明的目的是提供具有高发光强度的发光材料。另一个目的是提供一种具有高发光效率的发光元件。此外，另一个目的是提供一种功耗降低的发光装置和电子设备。发光材料至少含有属于元素周期表第14族的元素的发光物质，基础材料和添加剂，或含有属于第14族的两种以上的元素的化合物，或含有至少两种或更多种元素的化合物，各自属于选自第13族，第14族和第15族的不同基团。由于发光材料，发光元件和具有高发光性的电子器件效率可以在低电压下驱动得到。

7. 发明申请

WO2006104219A1 LASER IRRADIATION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：激光辐射装置和制造半导体器件的方法
公开(公告)号：WO2006104219A1
公开(公告)日：2006-10-05
申请号：PCT/JP2006/306593
申请日：2006-03-23
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , TANAKA, Koichiro , YAMAMOTO, Yoshiaki
发明人： TANAKA, Koichiro , YAMAMOTO, Yoshiaki
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786
CPC分类号： H01L27/1266 , B23K26/04 , B23K26/0738 , B23K26/083 , B23K26/0869 , G02B26/10 , G02B27/0911 , H01L27/1214 , H01L27/1285
摘要： The present invention provides a laser irradiation apparatus which can accurately control positions of beam spots of laser beams emitted from laser oscillators and the distance between the adjacent beam spots. A laser irradiation apparatus of the present invention includes a first movable stage with an irradiation body provided, two or more laser oscillators emitting laser beams, a plurality of second movable stages with the laser oscillators and optical systems provided, and a means for detecting at least one alignment maker. The first stage and the second stages may move not only in one direction but also in a plurality of directions. Further, the optical systems are to shape the laser beams emitted from the laser oscillators into linear beams on the irradiation surface.
摘要翻译：本发明提供一种激光照射装置，其能够精确地控制从激光振荡器发射的激光束的光束位置和相邻光束点之间的距离。本发明的激光照射装置包括具有照射体的第一可移动台，发射激光的两个以上的激光振荡器，设置有激光振荡器和光学系统的多个第二可动台，以及至少用于检测的装置一个对准制造商。第一阶段和第二阶段可以不仅在一个方向上而且在多个方向上移动。此外，光学系统将从激光振荡器发射的激光束成形为在照射表面上的线性光束。

8. 发明申请

WO2006022196A1 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2006022196A1
公开(公告)日：2006-03-02
申请号：PCT/JP2005/015114
申请日：2005-08-12
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , TANAKA, Koichiro , ISOBE, Atsuo , YAMAMOTO, Yoshiaki
发明人： TANAKA, Koichiro , ISOBE, Atsuo , YAMAMOTO, Yoshiaki
IPC分类号： H01L21/268 , H01L21/20 , H01L21/336 , H01L29/786
CPC分类号： H01L29/78648 , B23K26/0604 , B23K26/066 , H01L21/268 , H01L27/1296 , H01L29/78621 , H01L2029/7863
摘要： It is an object of the present invention to provide laser irradiation apparatus and method which can decrease the proportion of the microcrystal region in the whole irradiated region and can irradiate a semiconductor film homogeneously with a laser beam. A low-intensity part of a laser beam emitted from a laser oscillator is blocked by a slit, the laser beam is deflected by a mirror, and the beam is shaped into a desired size by using two convex cylindrical lenses. Then, the laser beam is delivered to the irradiation surface.
摘要翻译：本发明的目的是提供一种激光照射装置和方法，该激光照射装置和方法可以降低整个照射区域中的微晶区域的比例，并且可以用激光束均匀地照射半导体膜。从激光振荡器发射的激光束的低强度部分被狭缝阻挡，激光束被反射镜偏转，并且通过使用两个凸柱面透镜将光束成形为期望的尺寸。然后，激光束被传送到照射表面。

9. 发明申请

WO2007072744A1 LASER IRRADIATION APPARATUS AND LASER IRRADIATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：激光辐射装置和激光辐射方法及制造半导体器件的方法
公开(公告)号：WO2007072744A1
公开(公告)日：2007-06-28
申请号：PCT/JP2006/325003
申请日：2006-12-08
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , TANAKA, Koichiro , YAMAMOTO, Yoshiaki
发明人： TANAKA, Koichiro , YAMAMOTO, Yoshiaki
IPC分类号： H01L21/268 , H01L21/20
CPC分类号： B23K26/0853 , B23K26/04 , B23K26/0738 , G03F9/7088 , H01L21/02675 , H01L21/2026
摘要： The present invention provides a laser irradiation apparatus and a laser irradiation method which can conduct irradiation of a laser beam accurately by correcting misalignment of an irradiation position of the laser beam from the predetermined position due to temperature change. A laser irradiation apparatus includes a laser oscillator emitting a laser beam; an XY stage provided with an irradiation object; an optical system which shapes the laser beam into a linear beam on a surface of the irradiation object provided on the XY stage; an illumination which emits light to the surface of the irradiation object; and a camera for imaging reflected light of the light on the surface of the irradiation object, in which misalignment of an irradiation position of the linear beam detected from the reflected light imaged by the camera is corrected.
摘要翻译：本发明提供一种激光照射装置和激光照射方法，该激光照射装置和激光照射方法能够通过校正由于温度变化而导致的来自预定位置的激光束的照射位置的偏移而精确地进行激光束的照射。一种激光照射装置，包括发射激光束的激光振荡器; 设置有照射对象的XY台; 光学系统，其将激光束成形为设置在XY台上的照射物体的表面上的线性光束; 对照射物体的表面发光的照明; 以及用于对照射物体的表面上的光的反射光进行成像的照相机，其中校正了由照相机成像的反射光检测到的线性光束的照射位置的未对准。

10. 发明申请

WO2006075525A1 LIGHT EXPOSURE APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：使用其的半导体器件的曝光装置和制造方法
公开(公告)号：WO2006075525A1
公开(公告)日：2006-07-20
申请号：PCT/JP2005/024018
申请日：2005-12-21
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , TANAKA, Koichiro , YAMAMOTO, Yoshiaki
发明人： TANAKA, Koichiro , YAMAMOTO, Yoshiaki
IPC分类号： H01L21/027 , H01L21/20 , H01L21/336 , H01L29/786
CPC分类号： H01L21/02675 , G03F7/70383 , H01L21/2026 , H01L21/268 , H01L27/1266 , H01L27/1285 , Y10T29/41
摘要： When annealing of a semiconductor film is conducted using a plurality of lasers, each of the distances between laser irradiation regions is different. When a lithography step is conducted in accordance with a marker which is formed over a substrate in advance after the step, light-exposure is not correctly conducted to a portion crystallized by laser. By using a laser irradiation region obtained on a laser irradiation step as a marker, light-exposure is conducted by making a light-exposure position of a stepper coincide with a large grain size region in the laser irradiation region. A large grain size region and a poorly crystalline region are detected by utilizing a thing that scattering intensity of light is different between the large grain size region and the poorly crystalline region, thereby determining a light-exposure position.
摘要翻译：当使用多个激光器进行半导体膜的退火时，激光照射区域之间的距离各不相同。当根据在步骤之后预先在衬底上形成的标记进行光刻步骤时，曝光不能正确地传导到通过激光结晶的部分。通过使用在激光照射步骤中获得的激光照射区域作为标记，通过使激光照射区域中的步进曝光位置与大粒径区域一致来进行曝光。通过利用在大晶粒尺寸区域和不良结晶区域之间的散射光强度不同的物质来检测大晶粒尺寸区域和不良结晶区域，从而确定曝光位置。

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