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1. 发明申请

WO2010066626A3 METHOD FOR PRODUCING A DOPANT PROFILE 审中-公开
标题翻译：一种用于形成掺杂
公开(公告)号：WO2010066626A3
公开(公告)日：2010-12-16
申请号：PCT/EP2009066291
申请日：2009-12-03
申请人： SCHOTT SOLAR AG , HORZEL JOERG , FRANKE DIETER , BLENDIN GABRIELE , JAHN MARCO , SCHMIDT WILFRIED
发明人： HORZEL JOERG , FRANKE DIETER , BLENDIN GABRIELE , JAHN MARCO , SCHMIDT WILFRIED
IPC分类号： H01L31/18 , H01L21/225
CPC分类号： H01L31/1804 , H01L21/2253 , H01L21/2255 , H01L31/035281 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a dopant profile, which is based on a surface of a wafer-like semiconductor component (10), by introducing dopant atoms into the semiconductor component. In order to be able to manufacture semiconductor components with a desired dopant depth profile inexpensively, it is proposed that a dopant-containing layer be produced on or in a region of the surface first of all in order to produce a provisional first dopant profile and then a plurality of semiconductor components (10) which have a corresponding layer be subjected to heat treatment on top of one another in the form of a stack (26) in order to produce a second dopant profile which has a greater depth in comparison with the first dopant profile.
摘要翻译：本发明涉及通过将掺杂剂原子进入到半导体器件中形成晶片状的半导体器件（10）出射掺杂剂的表面中的一个的方法。为了廉价地制造具有所期望的掺杂剂深度分布的半导体器件中，提出了含有最初形成上或中形成掺杂剂层的面的一部分的初步第一掺杂剂，然后多个半导体器件的具有相应的层（10）一个在另一个之上的一个叠层（26）的形式，以形成具有比第一掺杂第二掺杂剂的热处理更大的深度被暂停。

2. 发明申请

WO2011073319A3 METHOD FOR PRODUCING A FRAME AND SOLAR CELL MODULE FRAME 审中-公开
标题翻译：制造方法框架和太阳电池模块的框
公开(公告)号：WO2011073319A3
公开(公告)日：2012-03-01
申请号：PCT/EP2010069893
申请日：2010-12-16
申请人： SCHOTT SOLAR AG , SCHWIRTLICH INGO , FRANKE DIETER , REIME SASCHA , FLIEDNER UWE
发明人： SCHWIRTLICH INGO , FRANKE DIETER , REIME SASCHA , FLIEDNER UWE
IPC分类号： H01L31/042 , F24J2/52
CPC分类号： F24J2/5211 , F24J2002/4665 , H02S20/00 , H02S30/10 , Y02E10/47 , Y02E10/50
摘要： The invention relates to a solar cell module frame (100), comprising frame longitudinal and transverse limbs (102, 104, 106, 108), which consist of metal or metal sections. In order to enable simple production with a desired structure in every dimension, the frame is composed of one or more first sections (102, 104), each having a first longitudinal groove, and one or more second sections (106, 108), each having a second longitudinal groove, the first section is produced by diecasting and the second section is produced by bending a metal sheet, and the first and second grooves transition aligned into one another on the frame interior and form a receptacle for the solar cell module (101).
摘要翻译：本发明涉及一种太阳能电池模块的框架（100）包括Rahmenlängs-和-querschenkel（102，104，106，108）由金属制成的金属或部分。为了使制造简单，在每个维度上的期望的结构中，提出的是，帧包括一个或多个第一部分（102，104），每个具有第一纵向槽和一个或多个第二部分（106，108）的每一个都具有由第二纵向槽的，即通过压铸和第二部分中的第一部分是通过弯曲片制成，并且所述第一和第二凹槽对准内框架延伸到彼此中和形式接收装置，用于在太阳能电池模块（101）。

3. 发明申请

WO2009000608A2 METHOD FOR PRODUCING FILMLIKE SEMICONDUCTOR MATERIALS AND/OR ELECTRONIC ELEMENTS BY PRIMARY FORMING AND/OR COATING 审中-公开
标题翻译： PROCESS FOR通过模制和/或涂覆PRODUCING膜状半导体材料和/或电子部件
公开(公告)号：WO2009000608A2
公开(公告)日：2008-12-31
申请号：PCT/EP2008056693
申请日：2008-05-30
申请人： EVONIK DEGUSSA GMBH , TROCHA MARTIN , SCHMITZ GEORG-J , FRANKE DIETER , BAEHR THOMAS , TIEFERS RUEDIGER , REX STEPHAN , APEL MARKUS
发明人： TROCHA MARTIN , SCHMITZ GEORG-J , FRANKE DIETER , BAEHR THOMAS , TIEFERS RUEDIGER , REX STEPHAN , APEL MARKUS
IPC分类号： B81C99/00 , H01L21/208
CPC分类号： H01L21/02601 , H01L21/0242 , H01L21/02422 , H01L21/02439 , H01L21/0245 , H01L21/02532 , H01L21/02628 , H01L31/03921 , Y02E10/50
摘要： The present invention relates to a production method for filmlike semiconductor materials and/or electronic elements by primary forming and/or coating. A characteristic feature of the method is the application of a size composed of nanoscale, system-inherent substances on the surface of the substrate to be coated or on the surface of the mould used in the primary forming method. Said size enables a filmlike semiconductor material to be released more simply from the substrate after the primary forming or coating process, reduces reactions with the substrate or mould material and hence contamination of the semiconductor material and reduces the heat transfer from the semiconductor material into the substrate with possibly advantageous effects on the microstructure of the semiconductor material, in particular its average grain size. In an advantageous configuration of the invention, the size is used not just with regard to better releasability from the substrate and reduced contamination of the semiconductor material but can furthermore be used in a targeted manner for producing a dopant pattern in the semiconductor material. For this purpose, at least two sizes having different dopant contents are applied to the substrate in a defined pattern. These dopant patterns are transferred during the primary forming and/or coating process by diffusion into the semiconductor material.
摘要翻译：本发明涉及一种用于片状半导体材料和/或通过模制和/或涂层的电子元件的制造方法。该方法的特征是从纳米级应用的尺寸，衬底的表面上的物质的全身待涂覆或在成型方法中使用的模具的表面上。这允许上浆与衬底或从基材上的片状半导体材料的一次成型或涂覆过程之后容易释放，减少的反应。模具材料，从而所述半导体材料的污染，并减少了从半导体材料中的热量传递到衬底，如果需要，与有益效果aufdie微观结构的半导体材料的，特别是其平均晶粒尺寸。在本发明的一个有利的实施方案中，上浆不仅术语aufeine从衬底和所使用的半导体材料的污染少更好的可除去性，但可以另外被使用，专门用于在半导体材料中产生一个Dotierstoffmusters。为了这个目的，在所述基板上的定义的模式具有不同Dotierstoffgehalten至少两个尺寸被应用。此Dotierstoffmuster通过扩散的主整形和/或涂层工艺期间被转移到半导体材料中。

4. 发明申请

WO2008059068A3 CARBONYL-SUBSTITUTED TITANOCENES 审中-公开
标题翻译：羰基取代茂钛
公开(公告)号：WO2008059068A3
公开(公告)日：2008-07-31
申请号：PCT/EP2007062511
申请日：2007-11-19
申请人： CHARITE UNIVERSITAETSMEDIZIN , UNIV BONN , PROKOP ARAM , SELIG ANJA , GANSAEUER ANDREAS , FRANKE DIETER
发明人： PROKOP ARAM , SELIG ANJA , GANSAEUER ANDREAS , FRANKE DIETER
IPC分类号： A61K31/28 , A61K31/7008 , A61P31/04 , A61P31/10 , A61P31/12 , A61P33/02 , A61P33/10 , A61P35/00 , A61P35/02 , C07F17/00
CPC分类号： A61K31/28 , A61K31/7008 , C07F17/00 , A61K2300/00
摘要： Disclosed is a medicament containing a compound of formula (Ia) or (Ib), wherein Z is selected from among a group comprising a covalent bond, at least one at least bivalent heteroatom, a saturated, unsaturated, branched, linear and/or cyclic, substituted or unsubstituted hydrocarbon chain, a saturated or unsaturated, branched, linear and/or cyclic, substituted or unsubstituted hydrocarbon chain containing heteroatoms, or combinations thereof, R `1 to R `4 and R ``1 to R ``5 each independently represents H, at least one heteroatom, a saturated, unsaturated, branched, linear and/or cyclic, substituted or unsubstituted hydrocarbon chain, a saturated or unsaturated, branched, linear and/or cyclic, substituted or unsubstituted hydrocarbon chain containing heteroatoms, or combinations thereof, the cyclopentadienyl rings are optionally linked by means of any of the radicals R ``1 to R ``5 , R 1 and R 2 independently represent H, a heteroatom, a saturated, unsaturated, branched, linear and/or cyclic, substituted or unsubstituted hydrocarbon chain, a saturated or unsaturated, branched, linear and/or cyclic, substituted or unsubstituted hydrocarbon chain containing heteroatoms, or combinations thereof, A`, A`` independently represent F, Cl, BR, I, and/or a physically acceptable acid radical of an organic or inorganic acid, n represents a positive integer, particularly 1, 2, 3, X = O, S, NH, NR 3 , NR 4 R 5 , wherein R 3 , R 4 , and R 5 independently have the meanings indicated for R` 1 to R` 4 , Y = a covalent bond, O, S, or NR 6 , wherein R 6 has the meaning indicated for R `1 to R `4 .
摘要翻译：含有其中Z选自共价键组成的组中的下式（Ia）或（Ib）的化合物的药物，至少一种至少二价的杂原子，饱和的，不饱和的，支链的，无支链和/或环状的，取代或未取代的烃链在链中或提供的一个具有杂原子的，饱和或不饱和的，支链的，无支链和/或环状的，取代或未取代的烃链，或它们的组合，R ^{`1 至R ^{`4 ，和 [R ^{``1 至R ^{``5 各自独立地为H，至少一个杂原子，饱和的，不饱和的，支链的，无支链和/或环状的，取代或未取代的烃链，设置有在链中杂原子，饱和或不饱和的，支链的，无支链和/或环状的，取代或未取代的平均烃链，或它们的组合，这两个环戊二烯基环`5 是任选的任何的R ^{``1 至R ^{`联，R ^{1 和 [R ^{2 各自独立地是H，杂原子，饱和的，不饱和的，支链的，无支链和/或环状的，取代或未取代的烃链，设置有在链中的杂原子的，饱和或不饱和的，支链的，无支链和意味着/或环状的，取代或未取代的烃链或它们的组合，A`，A``，F，氯，溴，I，和/或有机或无机酸的生理学可接受的酸残基是在每一情况下彼此独立地，n是一个正整数，尤其是1，2，3，X = O，S，NH，NR ^{3 ，NR ^{4 - [R ^{5 ，其中R < SUP> 3 ，R ^{4 和R ^{5 各自独立于R ^{1 至R ^{`4 ，Y =共价键，O，S，或NR ^{6 ，其中R ^{6 的 [R ^{`1 至R ^{`4 如上所定义。}}}}}}}}}}}}}}}}}}}

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