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1. 发明申请

WO2017153909A1 MICROELECTRONIC SENSOR FOR AIR QUALITY MONITORING 审中-公开
标题翻译：用于空气质量监测的微电子传感器
公开(公告)号：WO2017153909A1
公开(公告)日：2017-09-14
申请号：PCT/IB2017/051325
申请日：2017-03-07
申请人： RG INNOVATIONS PTE LTD
发明人： RAM, Ayal , LICHTENSTEIN, Amir
IPC分类号： H01L29/00 , G01N27/414
CPC分类号： G01N27/4141 , G01N27/4143 , G01N27/4148 , H01L29/2003 , H01L29/205 , H01L29/84
摘要： In some embodiments, a microelectronic sensor includes an open-gate pseudo-conductive high-electron mobility transistor and used for air quality monitoring. The transistor comprises a substrate, on which a multilayer hetero-junction structure is deposited. This hetero-junction structure comprises a buffer layer and a barrier layer, both grown from III-V single-crystalline or polycrystalline semiconductor materials. A two-dimensional electron gas (2DEG) conducting channel is formed at the interface between the buffer and barrier layers and provides electron current in the system between source and drain electrodes. The source and drain contacts are non-ohmic (capacitively-coupled) and connected to the formed 2DEG channel and to the electrical metallizations, the latter are placed on top of the transistor and connect it to the sensor system. The metal gate electrode is placed between the source and drain areas on or above the barrier layer, which may be recessed or grown to a specific thickness. An optional dielectric layer is deposited on top of the barrier layer.
摘要翻译：在一些实施例中，微电子传感器包括开路栅极伪导电高电子迁移率晶体管并用于空气质量监测。晶体管包括衬底，在衬底上沉积多层异质结结构。该异质结结构包括均由III-V单晶或多晶半导体材料生长的缓冲层和阻挡层。在缓冲层和阻挡层之间的界面处形成二维电子气（2DEG）传导沟道，并且在源极和漏极之间的系统中提供电子电流。源极和漏极触点是非欧姆（电容耦合）并连接到形成的2DEG通道和电气金属，后者放置在晶体管的顶部并将其连接到传感器系统。金属栅极电极放置在阻挡层上或上方的源极和漏极区域之间，其可以凹陷或生长至特定厚度。可选的电介质层沉积在阻挡层的顶部。

2. 发明申请

WO2017153906A3 PSEUDO-CONDUCTIVE HIGH-ELECTRON MOBILITY TRANSISTORS AND MICROELECTRONIC SENSORS BASED ON THEM 审中-公开
公开(公告)号：WO2017153906A3
公开(公告)日：2017-09-14
申请号：PCT/IB2017/051319
申请日：2017-03-07
申请人： RG INNOVATIONS PTE LTD.
发明人： RAM, Ayal , LICHTENSTEIN, Amir
IPC分类号： G01N27/414
摘要： In some embodiments, an open-gate pseudo-conductive high-electron mobility transistor (PC-HEMT) includes a multilayer hetero-junction structure made of III-V single-crystalline or polycrystalline semiconductor materials. This structure includes at least one buffer layer and a barrier layer, and is deposited on a substrate layer. The PC-HEMT further includes a two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) conducting channel formed at the interface between the buffer layer and the barrier layer, source and drain contacts, either ohmic or non-ohmic, connected to the 2DEG or 2DHG conducting channel, electrical metallizations for connecting the PC-HEMT to an electric circuit, and an open gate area between the source and drain contacts. Some embodiments use non-ohmic contacts, have thickness of the top (buffer or barrier) layer in the open gate area in the range of 5-9 nm, which corresponds to the pseudo-conducting current range between normally-on and normally-off operation mode of the transistor, and have the roughness of the surface barrier layer in the range of about 0.2 nm or less.

3. 发明申请

WO2017199110A1 MICROELECTRONIC SENSOR FOR BIOMETRIC AUTHENTICATION 审中-公开
标题翻译：用于生物识别的微电子传感器
公开(公告)号：WO2017199110A1
公开(公告)日：2017-11-23
申请号：PCT/IB2017/051884
申请日：2017-04-03
申请人： RG INNOVATIONS PTE LTD
发明人： RAM, Ayal , LICHTENSTEIN, Amir
IPC分类号： A61B5/00 , H01L27/00 , H01L29/00 , G01N27/414
CPC分类号： G01N27/414 , H01L29/0657 , H01L29/0843 , H01L29/2003 , H01L29/41766 , H01L29/7786
摘要： In some embodiments, a microelectronic sensor includes an open-gate pseudo-conductive high-electron mobility transistor and used for biometric authentication of a user. The transistor comprises a substrate, on which a multilayer hetero-junction structure is deposited. This hetero-junction structure comprises a buffer layer and a barrier layer, both grown from III-V single-crystalline or polycrystalline semiconductor materials. A two- dimensional electron gas (2DEG) conducting channel is formed at the interface between the buffer and barrier layers and provides electron current in the system between source and drain electrodes. The source and drain contacts, which maybe either ohmic or non- ohmic (capacitively-coupled), are connected to the formed 2DEG channel and to electrical metallizations, the latter are placed on top of the transistor and connect it to the sensor system. The metal gate electrode is placed between the source and drain areas on or above the barrier layer, which may be recessed or grown to a specific thickness. An optional dielectric layer is deposited on top of the barrier layer.
摘要翻译：在一些实施例中，微电子传感器包括开栅伪导电高电子迁移率晶体管并且用于用户的生物测定认证。晶体管包括衬底，在衬底上沉积多层异质结结构。该异质结结构包括均由III-V单晶或多晶半导体材料生长的缓冲层和阻挡层。在缓冲层和阻挡层之间的界面处形成二维电子气（2DEG）传导沟道，并且在源极和漏极之间的系统中提供电子电流。可以是欧姆或非欧姆（电容耦合）的源极和漏极触点连接到形成的2DEG沟道和电气金属，后者放置在晶体管的顶部并将其连接到传感器系统。金属栅极电极放置在阻挡层上或上方的源极和漏极区域之间，其可以凹陷或生长至特定厚度。可选的电介质层沉积在阻挡层的顶部。

4. 发明申请

WO2017153911A1 MICROELECTRONIC SENSOR FOR USE IN HYPERSENSITIVE MICROPHONES 审中-公开
标题翻译：用于超灵敏麦克风的微电子传感器
公开(公告)号：WO2017153911A1
公开(公告)日：2017-09-14
申请号：PCT/IB2017/051327
申请日：2017-03-07
申请人： RG INNOVATIONS PTE LTD.
发明人： RAM, Ayal , LICHTENSTEIN, Amir , KAPAN, Gideon
IPC分类号： A61B7/04 , H04R1/46 , H04R19/00 , H04R19/04
摘要： In some embodiments, the PC-HEMT based microelectronic sensors are used in recording physiological and non-physiological sounds as hypersensitive microphones. Recording the physiological sounds is associated with the S1/S2 heart split phenomena and phonocardiography.
摘要翻译：在一些实施例中，基于PC-HEMT的微电子传感器用于将生理和非生理声音记录为超敏感麦克风。记录生理声音与S1 / S2心脏分裂现象和心音图相关。

5. 发明申请

WO2017153906A2 PSEUDO-CONDUCTIVE HIGH-ELECTRON MOBILITY TRANSISTORS AND MICROELECTRONIC SENSORS BASED ON THEM 审中-公开
标题翻译：伪导电高电子迁移率晶体管和基于它们的微电子传感器
公开(公告)号：WO2017153906A2
公开(公告)日：2017-09-14
申请号：PCT/IB2017/051319
申请日：2017-03-07
申请人： RG INNOVATIONS PTE LTD.
发明人： RAM, Ayal , LICHTENSTEIN, Amir
IPC分类号： G01N27/414
摘要： In some embodiments, an open-gate pseudo-conductive high-electron mobility transistor (PC-HEMT) includes a multilayer hetero-junction structure made of III-V single-crystalline or polycrystalline semiconductor materials. This structure includes at least one buffer layer and a barrier layer, and is deposited on a substrate layer. The PC-HEMT further includes a two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) conducting channel formed at the interface between the buffer layer and the barrier layer, source and drain contacts, either ohmic or non-ohmic, connected to the 2DEG or 2DHG conducting channel, electrical metallizations for connecting the PC-HEMT to an electric circuit, and an open gate area between the source and drain contacts. Some embodiments use non-ohmic contacts, have thickness of the top (buffer or barrier) layer in the open gate area in the range of 5-9 nm, which corresponds to the pseudo-conducting current range between normally-on and normally-off operation mode of the transistor, and have the roughness of the surface barrier layer in the range of about 0.2 nm or less.
摘要翻译：在一些实施例中，开路栅极伪导电高电子迁移率晶体管（PC-HEMT）包括由III-V单晶或多晶半导体材料制成的多层异质结结构。该结构包括至少一个缓冲层和阻挡层，并沉积在基底层上。 PC-HEMT进一步包括在缓冲层和阻挡层之间的界面处形成的二维电子气（2DEG）或二维空穴气（2DHG）传导沟道，源极和漏极触点，可以是欧姆或非欧姆，连接到2DEG或2DHG导电沟道，用于将PC-HEMT连接到电路的电气金属化，以及源极和漏极触点之间的开放栅极区域。一些实施例使用非欧姆接触，开放栅极区域中的顶部（缓冲或阻挡）层的厚度在5-9nm的范围内，其对应于在常开和常关之间的伪传导电流范围晶体管的操作模式，并且表面势垒层的粗糙度在约0.2nm或更小的范围内。

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