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1. 发明申请

WO2009136285A2 PIXEL CIRCUITRY FOR ULTRA WIDE DYNAMIC RANGE 审中-公开
标题翻译：超声波动态范围的像素电路
公开(公告)号：WO2009136285A2
公开(公告)日：2009-11-12
申请号：PCT/IB2009/005755
申请日：2009-04-16
申请人： QUANTUM SEMICONDUCTOR LLC , AUGUSTO, Carlos
发明人： AUGUSTO, Carlos
IPC分类号： H04N5/355
CPC分类号： H04N5/35518 , H01L27/14609
摘要： The pixel circuitry of the invention enables light sensing through a photo-current mode with logarithmic compression and through accumulation of charges, with a seamless transition between the modes that depends only on the light signal strength, and not on external control signals. The pixel circuitry of the invention also allows said photo-current mode for a pixel matrix operated in the electronic global shutter mode, provides anti-blooming capability, and allows for sharing of certain pixel circuit elements between a plurality of pixels.
摘要翻译：本发明的像素电路通过具有对数压缩和通过电荷积累的光电流模式实现光感测，其中仅依赖于光信号强度的模式之间的无缝转换而不是外部控制信号。本发明的像素电路还允许在电子全局快门模式下操作的像素矩阵的所述光电流模式提供防晕能力，并且允许在多个像素之间共享某些像素电路元件。

2. 发明申请

WO2009103048A1 DUAL PHOTO-DIODE CMOS PIXELS 审中-公开
标题翻译：双光电二极管CMOS像素
公开(公告)号：WO2009103048A1
公开(公告)日：2009-08-20
申请号：PCT/US2009/034211
申请日：2009-02-16
申请人： QUANTUM SEMICONDUCTOR LLC
发明人： AUGUSTO, Carlos
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/14647
摘要： The present invention provides a method of forming CMOS pixels, with the light-sensing region comprising vertically aligned dual photo-diodes, in which the bottom photo-diode is formed either by a well-to-substrate junction, or by a deep-well-to-substrate junction, wherein said well and deep-well are independently biased from surrounding wells and deep-wells of the same polarity. Said independently biased well is a common region to the top and bottom photo-diodes and overlaps the source/drain region of a MOSFET formed on a well with the opposite polarity, that of the substrate. The photo-diodes can be electrically connected in parallel, or the top photo- diode can be biased separately from the bottom photo-diode, said bias can be such that avalanche mode operation is possible, including the single-photon detection (Geiger) mode.
摘要翻译：本发明提供了一种形成CMOS像素的方法，其中光感测区域包括垂直对准的双光电二极管，其中底部光电二极管由阱到衬底结或由深阱形成其中所述阱和深阱独立地偏置于相同极性的周围阱和深阱。所述独立偏置井是顶部和底部光电二极管的公共区域，并且与形成在具有相反极性的衬底的阱的MOSFET的源极/漏极区域重叠。光电二极管可以并联电连接，或者顶部光电二极管可以与底部光电二极管分开偏置，所述偏置可以使得雪崩模式操作是可能的，包括单光子检测（盖革）模式。

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