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    • 3. 发明申请
    • COMMUNICATION AND SYNAPSE TRAINING METHOD AND HARDWARE FOR BIOLOGICALLY INSPIRED NETWORKS
    • 通信和仿真培训方法和生物信息网络的硬件
    • WO2012006470A1
    • 2012-01-12
    • PCT/US2011/043257
    • 2011-07-07
    • QUALCOMM IncorporatedAPARIN, VladimirTANG, Yi
    • APARIN, VladimirTANG, Yi
    • G06N3/063
    • G06N3/0635G06N3/02G06N3/06G06N3/08G06N99/005
    • Certain embodiments of the present disclosure support techniques for training of synapses in biologically inspired networks. Only one device based on a memristor can be used as a synaptic connection between a pair of neurons. The training of synaptic weights can be achieved with a low current consumption. A proposed synapse training circuit may be shared by a plurality of incoming/outgoing connections, while only one digitally implemented pulse-width modulation (PWM) generator can be utilized per neuron circuit for generating synapse-training pulses. Only up to three phases of a slow clock can be used for both the neuron-to-neuron communications and synapse training. Some special control signals can be also generated for setting up synapse training events. By means of these signals, the synapse training circuit can be in a high-impedance state outside the training events, thus the synaptic resistance (i.e., the synaptic weight) is not affected outside the training process.
    • 本公开的某些实施例支持在生物启发网络中训练突触的技术。 只有一个基于忆阻器的设备可以用作一对神经元之间的突触连接。 突触体重的训练可以用低电流消耗来实现。 所提出的突触训练电路可以由多个输入/输出连接共享,而每个神经元电路只能使用一个数字实现的脉宽调制(PWM)发生器来产生突触训练脉冲。 只有三个阶段的慢时钟可用于神经元到神经元通信和突触训练。 还可以生成一些特殊控制信号来设置突触训练事件。 通过这些信号,突触训练电路可以处于训练事件之外的高阻抗状态,因此突触电阻(即突触重量)在训练过程之外不受影响。
    • 8. 发明申请
    • INTERSTAGE ISOLATION IN DARLINGTON TRANSISTORS
    • 达林顿晶体管的间隔隔离
    • WO2004079789A2
    • 2004-09-16
    • PCT/US2004/006278
    • 2004-03-01
    • RENSSELAER POLYTECHNIC INSTITUTECHOW, Tat-Sing PaulTANG, Yi
    • CHOW, Tat-Sing PaulTANG, Yi
    • H01L
    • H01L27/0825
    • A Darlington transistor has a semiconductor collector region of one conductivity type adapted to form a collector for the device. A conductive collector contact and a semiconductor base region of opposite conductivity type are connected to the collector region. First and spaced apart second semiconductor emitter regions of the one conductivity type are connected to the base region and a first conductive emitter contact is connected to the first emitter region with a second conductive emitter contact connected to the second emitter region. A first conductive base contact is connected to the base region and is conductively connected to the first emitter contact. A second conductive base contact is conductively isolated from the first base contact and is connected to the base region. A resistive trench region extends at least partly into the base region for resistively separating the base region into a first base region communicating with the first emitter contact and the second base contact, and a second base region communicating with the first base contact and the second emitter contact.
    • 达林顿晶体管具有一种导电类型的半导体集电极区域,适合于形成器件的集电极。 导电集电极触点和相反导电类型的半导体基极区域连接到集电极区域。 一种导电类型的第一和间隔开的第二半导体发射极区域连接到基极区域,并且第一导电发射极触点连接到第一发射极区域,其中第二导电发射极触点连接到第二发射极区域。 第一导电基极触点连接到基极区并导电连接到第一发射极触点。 第二导电基极触点与第一基极触点导电隔离并连接到基极区域。 电阻沟槽区至少部分地延伸到基极区中,用于将基极区电阻分离成与第一发射极触点和第二基极触点连通的第一基极区和与第一基极触头和第二发射极连通的第二基极区 接触。