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    • 6. 发明申请
    • LOW OHMIC THROUGH SUBSTRATE INTERCONNECTION FOR SEMICONDUCTOR CARRIERS
    • 通过半导体载体的基板互连实现低欧姆性
    • WO2007110799A2
    • 2007-10-04
    • PCT/IB2007/050914
    • 2007-03-16
    • PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBHKONINKLIJKE PHILIPS ELECTRONICS N.V.VOGTMEIER, GereonSTEADMAN, RogerDORSCHEID, RalfJONKERS, Jeroen
    • VOGTMEIER, GereonSTEADMAN, RogerDORSCHEID, RalfJONKERS, Jeroen
    • H01L23/48
    • H01L21/76898H01L23/481H01L2224/0401H01L2224/05H01L2224/131H01L2924/014
    • It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection (610) extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon. After forming integrated components (620) on top of the front surface the substrate (600) may be thinned and the non-metallic material may be substituted with the low ohmic material, which is in particular a metallic material.
    • 描述了形成在半导体衬底(600)上的用于电子芯片的低欧姆直通晶片互连(TWI)。 TWI包括在衬底(600)的前表面和后表面之间延伸的第一连接(610)。 第一连接(610)包括填充有比多晶硅电阻率低的低欧姆材料的通孔。 TWI还包括也在前表面和后表面之间延伸的第二连接(615)。 第二连接(615)通过半导体衬底(600)的至少一部分与第一连接(610)在空间上分离。 前表面设置有集成电路布置(620),其中第一连接(610)电耦合到集成电路布置(620)的至少一个节点而不穿透集成电路布置(620)。 在处理TWI期间,通孔可以首先用非金属材料填充,例如, 多晶硅。 在前表面顶部形成集成组件(620)之后,衬底(600)可以变薄,并且非金属材料可以用特别是金属材料的低欧姆材料替代。