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1. 发明申请

WO0016410A3 SEMICONDUCTOR COMPONENT CONTAINING LATTICE MISMATCHED SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：具有栅格水平半导体材料的半导体结构元件
公开(公告)号：WO0016410A3
公开(公告)日：2000-06-08
申请号：PCT/DE9902847
申请日：1999-09-08
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , BEHRINGER MARTIN RUDOLF , HOMMEL DETLEF
发明人： BEHRINGER MARTIN RUDOLF , HOMMEL DETLEF
IPC分类号： H01L31/0296 , H01L31/0352 , H01L29/22
CPC分类号： H01L31/02963 , H01L31/0296 , H01L31/0352
摘要： The invention relates to a semiconductor component in which in one and the same semiconductor body a first semiconductor material (1) having a first lattice constant, such as ZnSe, is combined with a second semiconductor material (2) having a second lattice constant, such as ZnTe, and the first and second lattice constants differ from each other. The first semiconductor material (1) forms at least one partial area of a matrix (4) in which a plurality of submonolayer islands (5) are embedded which comprise the second semiconductor material (2). This permits the production of highly doped zones in materials which are difficult to dope as highly.
摘要翻译：一种半导体器件的组合，其中在一个第一半导体材料并具有第一晶格常数为Biespiel的ZnSe与第二半导体材料（2）具有第二晶格常数为相同的半导体主体（1），例如，的ZnTe和所述第一和第二晶格常数彼此不同。第一半导体材料（1）至少形成在一个矩阵（4），其中多个亚单层岛（5）被嵌入的部分区域，具有第二半导体材料（2），并因此使得能够产生高掺杂区域在材料很难掺杂得如此之高。

2. 发明申请

WO2010069282A3 LUMINOUS MEANS AND PROJECTOR COMPRISING AT LEAST ONE LUMINOUS MEANS OF THIS TYPE 审中-公开
标题翻译：灯和投影仪至少有一个这样的灯
公开(公告)号：WO2010069282A3
公开(公告)日：2010-11-11
申请号：PCT/DE2009001448
申请日：2009-10-19
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LELL ALFRED , TAUTZ SOENKE , STRAUSS UWE , BEHRINGER MARTIN RUDOLF , BRUENINGHOFF STEFANIE , DINI DIMITRI , EISERT DOMINIK , EICHLER CHRISTOPH
发明人： LELL ALFRED , TAUTZ SOENKE , STRAUSS UWE , BEHRINGER MARTIN RUDOLF , BRUENINGHOFF STEFANIE , DINI DIMITRI , EISERT DOMINIK , EICHLER CHRISTOPH
IPC分类号： H04N9/31
CPC分类号： H04N9/3161 , H01S5/005 , H01S5/02292 , H01S5/4093 , H04N9/3129
摘要： In at least one embodiment of the luminous means (1), the latter comprises at least one semiconductor laser (2) which is designed to emit a primary radiation (P) having a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the luminous means (1) comprises at least one conversion means (3) which is disposed downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) having a greater wavelength that is different from the primary radiation (P). In this case, the radiation (R) emitted by the luminous means (1) exhibits an optical coherence length amounting to at most 50 µm.
摘要翻译：在发光装置（1）的至少一个实施例中，这包括至少一个半导体激光器（2），该半导体激光器被设置为发射波长在360nm和485nm之间（包括端值）的初级辐射（P）。此外，所述发光装置（1）包括至少一个转换装置（3），半导体激光器（2）的下游，并适于至少一个初级辐射（P）的成次级辐射（S）与所述初级辐射（P）不同的一个部分，转换更大的波长。由发光装置（1）发射的辐射（R）表现出至多50μm的光学相干长度。

3. 发明申请

WO2016066645A3 METHOD FOR DETACHING A SUBSTRATE, DEVICE FOR CARRYING OUT SUCH A METHOD AND PUMPING DEVICE FOR PUMPING ETCHING SOLUTION 审中-公开
标题翻译：去除基板的方法，执行该方法的装置和用于泵浦沉积溶液的泵送装置
公开(公告)号：WO2016066645A3
公开(公告)日：2016-06-23
申请号：PCT/EP2015074875
申请日：2015-10-27
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： SUNDGREN PETRUS , ENGLHARD MARCO , BEHRINGER MARTIN RUDOLF , KLEMP CHRISTOPH
IPC分类号： H01L21/67
CPC分类号： H01L33/0079 , C23F1/20 , H01L21/67086 , H01L21/67092 , H01L24/95
摘要： The invention relates to a method for detaching a substrate (11) from a layer sequence (13), comprising the following steps: a) providing a composite (1, 2) having - a wafer (1) with the substrate (11), the layer sequence (13) and a sacrificial layer (12) arranged between the substrate (11) and the layer sequence (13); - a support (2) on a cover surface (13a) of the layer sequence (13), which faces away from the substrate (11), and - at least two separating trenches (14) which extend in the vertical direction (Z) through the layer sequence (13); b) attaching a pumping device (3) on the composite (1, 2); c) introducing the composite (1, 2) into an etching bath (4) with an etching solution (41); and subsequently d) generating a pressure gradient (5) between the separating trenches (14) and the etching solution (41) with the pumping device (3) such that the etching solution (41) flows through the separating trenches (14) in some places along the sacrificial layer (12) and is in some places in direct contact with the sacrificial layer (12); e) detaching the substrate (11).
摘要翻译：本发明提供了一种用于一个层序列（13）的衬底（11）的分离，包括以下步骤：a）提供一个复合物（1,2），包括： - 一个晶片（1）与基板（11）在背离（11）远的层序列（13）的基板顶面（13a）的支撑件（2），以及 - 布置一系列的层（13）和所述基板（11）和所述层序列（13）之间的牺牲层（12）的， - 在通过该层序列（13）的垂直方向（Z）延伸的至少两个隔离沟槽（14），b）将泵送装置（3）向复合物（1，2），c）将复合材料（1，2）在具有蚀刻溶液（41）的蚀刻槽（4）中，然后d）利用泵送装置（3）在分离槽（14）和蚀刻溶液（41）之间产生压力梯度（5），使得蚀刻溶液（41）沿着牺牲层（12）的位置处的分离沟槽（14）流动并且处于直接接触的位置与牺牲层（12），e）衬底（11）分离。

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