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1. 发明申请

WO2017219082A1 A COPPER-BASED CHALCOGENIDE PHOTOVOLTAIC DEVICE AND A METHOD OF FORMING THE SAME 审中-公开
标题翻译：一种基于铜的硫化锌光伏器件及其制备方法
公开(公告)号：WO2017219082A1
公开(公告)日：2017-12-28
申请号：PCT/AU2017/050630
申请日：2017-06-21
申请人： NEWSOUTH INNOVATIONS PTY LIMITED
发明人： HAO, Xiaojing , LIU, Fangyang , HUANG, Jialiang , YAN, Chang , SUN, Kaiwen , GREEN, Martin Andrew
IPC分类号： H01L31/06 , H01L21/36 , H01L21/477 , H01L31/0264 , H01L31/0296 , H01L31/032 , H01L31/0336 , H01L31/073 , H01L31/0749 , H01L31/18
摘要： A method for forming a photovoltaic device comprising the steps of: providing a first conductive material on a substrate; depositing a continuous layer of a dielectric material less than 10 nm thick on the first conductive material; annealing the first conductive material and the layer of dielectric material; forming a chalcogenide light-absorbing material on the layer of dielectric material; and depositing a second material on the light-absorbing material such that the second material is electrically coupled to the light-absorbing material; wherein the first conductive material and the dielectric material are selected such that, during the step of annealing, a portion of the first conductive material undergoes a chemical reaction to form: a layer of a metal chalcogenide material at the interface between first conductive material and the dielectric material; and a plurality of openings in the layer of dielectric material; the openings being such to allow electrical coupling between the light-absorbing material and the layer of a metal chalcogenide material. Additionally contemplated is a photovoltaic device formed by this method.
摘要翻译：一种用于形成光伏器件的方法，包括以下步骤：在衬底上提供第一导电材料; 在第一导电材料上沉积小于10nm厚的介电材料的连续层; 退火第一导电材料和介电材料层; 在电介质材料层上形成硫属化物光吸收材料; 以及在所述光吸收材料上沉积第二材料，使得所述第二材料电耦合到所述光吸收材料; 其中选择所述第一导电材料和所述电介质材料使得在所述退火步骤期间，所述第一导电材料的一部分经历化学反应以形成：在所述第一导电材料和所述第二导电材料之间的界面处的金属硫族化物材料层; 电介质材料; 以及介电材料层中的多个开口; 该开口使得能够在光吸收材料和金属硫族化物材料层之间进行电耦合。另外考虑的是通过这种方法形成的光伏器件。

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