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1. 发明申请

WO2006105281A3 METAL OXIDE SEMICONDUCTOR FILMS, STRUCTURES AND METHODS 审中-公开
公开(公告)号：WO2006105281A3
公开(公告)日：2006-10-05
申请号：PCT/US2006/011619
申请日：2006-03-28
申请人： MOXTRONICS, INC. , RYU, Yungryel , LEE, Tae-seok , WHITE, Henry, W.
发明人： RYU, Yungryel , LEE, Tae-seok , WHITE, Henry, W.
IPC分类号： H01L29/08 , H01L29/18 , H01L29/10 , H01L29/12
摘要： Materials and structures (FIG 1) for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material The atomic fraction x of Be in the ZnBeO alloy system, namely, ZnI.xBexO, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, ZnI yCdyOl_zSez, can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO Each alloy formed can be undoped, or p-type or n- type doped, by use of selected dopant elements These alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values, heterostructures such as single and multiple quantum wells and superlattice layers or cladding layers, and to fabricate optical and electronic semiconductor devices These structures can be applied to improve the function, capability, and performance of semiconductor devices

2. 发明申请

WO2006081262A2 HIGH-PERFORMANCE FET DEVICES AND METHODS 审中-公开
标题翻译：高性能FET器件和方法
公开(公告)号：WO2006081262A2
公开(公告)日：2006-08-03
申请号：PCT/US2006/002534
申请日：2006-01-25
申请人： MOXTRONICS, INC. , LEE, Tae-seok , RYU, Yungryel , WHITE, Henry
发明人： LEE, Tae-seok , RYU, Yungryel , WHITE, Henry
IPC分类号： H01L29/30
CPC分类号： H01L29/808 , H01L29/1608 , H01L29/22 , H01L29/267 , H01L29/45 , H01L29/47 , H01L29/78 , H01L29/812
摘要： An epitaxially layered structure with gate voltage bias supply circuit element for improvement in performance for semiconductor field effect transistor (FET) devices utilizes a structure comprised of a substrate, a first layer semiconductor film of either an n-type or a p-type grown epitaxially on the substrate, with the possibility of a buffer layer between the substrate and first layer film, an active semiconductor layer grown epitaxially on the first semiconductor layer with the conductivity type of the active layer being opposite that of the first semiconductor layer, with the active layer having a gate region and a drain region and a source region with electrical contacts to gate, drain and source regions sufficient to form a FET, an electrical contact on either the substrate or the first semiconductor layer, and a gate voltage bias supply circuit element electrically connected to gate contact and to substrate or first semiconductor layer with voltage polarity and magnitude sufficient to increase device performance. This epitaxially layered structure with gate voltage bias supply circuit element can be employed for improving the function and high frequency performance of semiconductor FET devices.
摘要翻译：具有用于提高半导体场效应晶体管（FET）器件的性能的栅极电压偏置电路元件的外延层结构利用了由衬底，n型或p型生长外延的第一层半导体膜构成的结构在衬底上，具有在衬底和第一层膜之间的缓冲层的可能性;在第一半导体层上外延生长的有源半导体层，其中有源层的导电类型与第一半导体层相反，具有栅极区域和漏极区域的源极区域和与足以形成FET的栅极，漏极和源极区域的电接触的源极区域，在基板或第一半导体层上的电接触以及栅极电压偏置电路元件电连接到栅极接触和电压极性和幅度足够的衬底或第一半导体层以提高设备性能。可以采用具有栅极电压偏置电路元件的外延层结构来提高半导体FET器件的功能和高频性能。

3. 发明申请

WO2009089198A1 HIGH-PERFORMANCE HETEROSTRUCTURE LIGHT EMITTING DEVICES AND METHODS 审中-公开
标题翻译：高性能结构发光装置和方法
公开(公告)号：WO2009089198A1
公开(公告)日：2009-07-16
申请号：PCT/US2009/030186
申请日：2009-01-06
申请人： MOXTRONICS, INC. , RYU, Yungryel , LEE, Tae-seok , WHITE, Henry
发明人： RYU, Yungryel , LEE, Tae-seok , WHITE, Henry
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , H01L33/14 , H01L33/28 , H01L33/405
摘要： A layered heterostructure light emitting device comprises at least a substrate, an n-type gallium nitride-based semiconductor cladding layer region, a p-type gallium nitride-based semiconductor cladding layer region, a p-type zinc oxide-based hole injection layer region, and an ohmic contact layer region. Alternatively, the device may also comprise a capping layer region, or may also comprise a reflective layer region and a protective capping layer region. The device may also comprise one or more buried insertion layers adjacent to the ohmic contact layer region. The ohmic contact layer region may be comprised of materials such as indium tin oxide, gallium tin oxide, or indium tin oxide material. An n-electrode pad is formed that is in electrical contact with the n-type gallium nitride based cladding layer region. A p-type pad is formed that is in electrical contact with the p-type region.
摘要翻译：分层异质结构发光器件至少包括衬底，n型氮化镓基半导体覆层区域，p型氮化镓基半导体覆层区域，p型氧化锌基空穴注入层区域，以及欧姆接触层区域。或者，该装置还可以包括覆盖层区域，或者也可以包括反射层区域和保护覆盖层区域。该器件还可以包括与欧姆接触层区域相邻的一个或多个掩埋插入层。欧姆接触层区域可以由诸如氧化铟锡，氧化锡锡或氧化铟锡材料的材料构成。形成与n型氮化镓基覆层区域电接触的n电极焊盘。形成与p型区域电接触的p型焊盘。

4. 发明申请

WO2009058842A1 HIGH-PERFORMANCE HETEROSTRUCTURE FET DEVICES AND METHODS 审中-公开
标题翻译：高性能结构FET器件及方法
公开(公告)号：WO2009058842A1
公开(公告)日：2009-05-07
申请号：PCT/US2008/081556
申请日：2008-10-29
申请人： MOXTRONICS, INC. , RYU, Yungryel , LEE, Tae-seok , LUGUBAN, Jorge , WHITE, Henry, W.
发明人： RYU, Yungryel , LEE, Tae-seok , LUGUBAN, Jorge , WHITE, Henry, W.
IPC分类号： H01L27/085
CPC分类号： H01L29/78 , H01L29/1066 , H01L29/1075 , H01L29/221 , H01L29/225 , H01L29/227 , H01L29/41766 , H01L29/7787 , H01L29/802 , H01L29/812
摘要： A layered heterostructure field effect transistor (HFET) comprises a substrate, a first semiconductor oxide layer grown on the substrate, and a second semiconductor oxide layer grown on the first layer semiconductor layer and having an energy band gap different from that of the first semiconductor layer, and the second layer also having a gate region and a drain region and a source region with electrical contacts to gate, drain and source regions sufficient to form a HFET. The substrate may be a material, including a single crystal material, and may contain a buffer layer material on which the first semiconductor layer is grown. The conductivity type of the first and second semiconductor layers and the composition of the semiconductor oxide layers can be selected to improve performance for desired operational features of the HFET. This layered structure can be applied for the improvement in the function and high frequency and high power performance of semiconductor HFET devices.
摘要翻译：层状异质结构场效应晶体管（HFET）包括衬底，在衬底上生长的第一半导体氧化物层和在第一层半导体层上生长并且具有与第一半导体层的能带隙不同的能带隙的第二半导体氧化物层并且第二层还具有栅极区域和漏极区域以及与足以形成HFET的栅极，漏极和源极区域电接触的源极区域。衬底可以是包括单晶材料的材料，并且可以包含其上生长第一半导体层的缓冲层材料。可以选择第一和第二半导体层的导电类型和半导体氧化物层的组成以改善HFET的期望操作特征的性能。这种分层结构可以用于半导体HFET器件的功能和高频率和高功率性能的提高。

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