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1. 发明申请

WO2005065122A2 ADAPTIVE DIVERSITY ANTENNA SYSTEM 审中-公开
标题翻译：自适应多样性天线系统
公开(公告)号：WO2005065122A2
公开(公告)日：2005-07-21
申请号：PCT/US2004/040808
申请日：2004-12-07
申请人： MOTOROLA, INC. , STRATIS, Glafkos , EMRICK, Rudy, M. , CORRAL, Celestino, A. , EMAMI, Shahriar , SIBECAS, Salvador
发明人： STRATIS, Glafkos , EMRICK, Rudy, M. , CORRAL, Celestino, A. , EMAMI, Shahriar , SIBECAS, Salvador
IPC分类号： H04B7/08 , H04B1/06 , H04B7/10
CPC分类号： H04B7/0871 , H04B7/0874 , H04B7/10
摘要： An antenna system (205) includes an antenna structure (215), a receiver (220), and an antenna system controller (225). The antenna structure includes an arrangement of antennas (237), a signal combiner (240), and a switching matrix (235). The arrangement of antennas is designed to have a set of antenna element separations that are optimized to provide lowest correlation coefficients of intercepted radio signals for a corresponding set of electromagnetic environment types that vary from a very low density scattering environment to a maximum density scattering environment. The antennas (230), (231), (232), (233), (234) in the antenna arrangement each include at least one element that has a common polarization. There is at least one antenna that is a dual polarized antenna. The antenna system selects an antenna element pair that corresponds to the environment type which it is operating and thereby receives a best combined signal.
摘要翻译：天线系统（205）包括天线结构（215），接收器（220）和天线系统控制器（225）。天线结构包括天线布置（237），信号组合器（240）和开关矩阵（235）。天线布置被设计成具有一组天线元件间隔，所述天线元件间隔被优化以针对从非常低密度散射环境变化到最大密度散射环境的对应组的电磁环境类型提供截取无线电信号的最低相关系数。天线装置中的天线（230），（231），（232），（233），（234）各自包括具有共同极化的至少一个元件。至少有一个天线是双极化天线。天线系统选择与其正在工作的环境类型相对应的天线元件对，从而接收最佳组合信号。

2. 发明申请

WO2006049875A1 PATCH ARRAY FEED FOR AN AUTOMOTIVE RADAR ANTENNA 审中-公开
标题翻译：用于汽车雷达天线的配线阵列
公开(公告)号：WO2006049875A1
公开(公告)日：2006-05-11
申请号：PCT/US2005/037555
申请日：2005-10-20
申请人： MOTOROLA, INC. , FRANSON, Steven, J. , EMRICK, Rudy, M.
发明人： FRANSON, Steven, J. , EMRICK, Rudy, M.
IPC分类号： G01S13/00
CPC分类号： H01Q1/3233 , H01Q1/42 , H01Q3/20 , H01Q3/245 , H01Q19/17
摘要： An improved transceiver assembly for a vehicle for detecting potentially hazardous objects is disclosed. The transceiver assembly preferably comprises a patch array feed antenna having an array of a plurality of patches for generating a beam and for detecting the beam as reflected from the potential hazards. The antenna is formed in or on a housing which also contains a parabolic dish that moves to sweeps the beam of radiation towards the potential hazards outside of the vehicle. In a preferred embodiment, approximately 77 GHz radiation is generated from and detected by the antenna.
摘要翻译：公开了一种改进的用于检测潜在危险物体的车辆收发机组件。收发器组件优选地包括具有多个补片的阵列的贴片阵列馈电天线，用于产生光束并且用于检测从潜在危险反射的光束。天线形成在壳体中或壳体上，壳体还包含抛物面皿，其移动以将辐射束扫过车辆外部的潜在危险。在优选实施例中，从天线产生大约77GHz的辐射并由天线检测。

3. 发明申请

WO2003009355A1 RF, OPTICAL, PHOTONIC, ANALOG, AND DIGITAL FUNCTIONS IN A SEMICONDUCTOR STRUCTURE 审中-公开
标题翻译： RF，光学，光电，模拟和数字功能在半导体结构
公开(公告)号：WO2003009355A1
公开(公告)日：2003-01-30
申请号：PCT/US2002/012796
申请日：2002-04-23
申请人： MOTOROLA, INC.
发明人： BOSCO, Bruce, Allen , EMRICK, Rudy, M. , FRANSON, Steven, James , ESCALERA, Nestor, Javier , FARBER, Bryan, K.
IPC分类号： H01L21/20
CPC分类号： H03F3/602 , H01L21/02381 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/02521 , H01L21/8258 , H01L27/0605 , H03F3/087 , H03F2200/451
摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers (26). An accommodating buffer layer comprises a layer (24) of monocrystalline oxide spaced apart from the silicon wafer byan amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Radio frequency, optical, logic and other circuits in both silicon and compound semiconductor materials may be combined and interconnected in a single semiconductor structure.
摘要翻译：可以通过形成用于生长单晶层（26）的柔性衬底，生长单晶材料的高质量外延层，覆盖单晶衬底（22），例如大的硅晶片。容纳缓冲层包括通过硅氧化物的非晶界面层（28）与硅晶片间隔开的单晶氧化物层（24）。非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。硅和化合物半导体材料中的射频，光学，逻辑和其他电路可以在单个半导体结构中组合和互连。

4. 发明申请

WO2002086952A1 MIXED-SIGNAL SEMICONDUCTOR STRUCTURE 审中-公开
标题翻译：混合信号半导体结构
公开(公告)号：WO2002086952A1
公开(公告)日：2002-10-31
申请号：PCT/US2002/004851
申请日：2002-02-19
申请人： MOTOROLA INC.
发明人： EMRICK, Rudy, M. , WARBLE, Keith, V.
IPC分类号： H01L21/20
CPC分类号： H01L21/02488 , C23C16/26 , C30B25/02 , C30B25/18 , C30B29/04 , H01L21/02378 , H01L21/02381 , H01L21/02439 , H01L21/02505 , H01L21/02513 , H01L21/02521 , H01L21/31691 , H01L21/318 , H01L21/8221 , H01L21/8258 , H01L23/66 , H01L27/0605 , H01L27/0688 , H01L2924/00011 , H01L2924/0002 , H01L2924/00 , H01L2224/80001
摘要： Mixed-signal devices (300) are formed using high quality epitaxial layers of monocrystalline materials grown overlying a monocrystalline substrate such as a large silicon wafer (302), using an accommodating buffer layer (304). The accommodating buffer layer (304) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide or an amorphous layer formed from a monocrystalline precursor. The device (300) includes passive components (314) formed away from the substrate (302), to minimize adverse signal interaction between passive component (314) signals and the substrate (302).
摘要翻译：使用容纳缓冲层（304），使用生长在诸如大硅晶片（302）的单晶衬底上生长的单晶材料的高质量外延层来形成混合信号器件（300）。容纳缓冲层（304）是通过氧化硅的非晶界面层或由单晶前体形成的非晶层与硅晶片间隔开的单晶氧化物层。器件（300）包括远离衬底（302）形成的无源部件（314），以最小化无源部件（314）信号与衬底（302）之间的不利信号相互作用。

5. 发明申请

WO2004042816A2 MONOLITHIC BRIDGE CAPACITOR 审中-公开
标题翻译：单相桥式电容器
公开(公告)号：WO2004042816A2
公开(公告)日：2004-05-21
申请号：PCT/US2003/014097
申请日：2003-05-07
申请人： MOTOROLA, INC.
发明人： FRANSON, Steven, J. , EMRICK, Rudy, M. , BOSCO, Bruce, A.
IPC分类号： H01L23/00
CPC分类号： H01L28/40 , H01G4/01 , H01G4/02 , H01L27/0805
摘要： According to the most preferred embodiments of the present invention, at least one of the two plates (710, 720) of a capacitor (700) is formed in at least two different layers of an integrated circuit. The methods of the present invention uses air bridges (715) or some other dielectric medium to isolate certain portions of the two capacitive plates of a capacitor where at least a portion of one of the capacitive plates passes over at least a portion of the other capacitive plate. The line widths, line separation and number of levels used in the topology of the capacitor will determine the overall capacitance value of a given structure.
摘要翻译：根据本发明的最优选实施例，电容器（700）的两个板（710,720）中的至少一个形成在集成电路的至少两个不同层中。本发明的方法使用空气桥（715）或一些其它电介质来隔离电容器的两个电容板的某些部分，其中电容板中的至少一部分通过至少一部分电容盘子。电容器拓扑结构中的线宽，线间距和电平数决定了给定结构的整体电容值。

6. 发明申请

WO2003007440A3 INTEGRATED LIGHT SOURCE FOR FREQUENCY ADJUSTMENT 审中-公开
公开(公告)号：WO2003007440A3
公开(公告)日：2003-01-23
申请号：PCT/US2002/012850
申请日：2002-04-23
申请人： MOTOROLA, INC.
发明人： BOSCO, Bruce, Allen , EMRICK, Rudy, M. , ROCKWELL, Stephen, Kent
IPC分类号： H01S5/026
摘要： An integrated light source (300) for frequency adjustment, injection locking or modulation of an oscillator is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of an active device and a light source (301) on a monocrystalline compound semiconductor material and control circuitry (307) for the light source on a monocrystalline substrate. The use of light to provide the frequency adjustment, injection locking or modulation of the oscillator has multiple advantages including maintenance of good phase-noise.

7. 发明申请

WO2003007440A2 INTEGRATED LIGHT SOURCE FOR FREQUENCY ADJUSTMENT 审中-公开
标题翻译：一体化光源进行频率调整
公开(公告)号：WO2003007440A2
公开(公告)日：2003-01-23
申请号：PCT/US2002/012850
申请日：2002-04-23
申请人： MOTOROLA, INC.
发明人： BOSCO, Bruce, Allen , EMRICK, Rudy, M. , ROCKWELL, Stephen, Kent
IPC分类号： H01S5/00
CPC分类号： H01L27/0605 , H01L21/8258 , H01L27/0688 , H01S5/021 , H01S5/026 , H01S5/0261 , H01S5/183 , H01S5/327 , H01S5/4006 , H01S2301/176
摘要： An integrated light source (300) for frequency adjustment, injection locking or modulation of an oscillator is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of an active device and a light source (301) on a monocrystalline compound semiconductor material and control circuitry (307) for the light source on a monocrystalline substrate. The use of light to provide the frequency adjustment, injection locking or modulation of the oscillator has multiple advantages including maintenance of good phase-noise.
摘要翻译：公开了一种用于频率调节，注入锁定或振荡器调制的集成光源（300）。在单晶衬底上生长的单晶材料的高质量外延层使得能够在单晶衬底上的单晶化合物半导体材料和用于光源的控制电路（307）上形成有源器件和光源（301）。使用光提供频率调节，注入锁定或调制振荡器有多个优点，包括保持良好的相位噪声。

8. 发明申请

WO2003009382A3 SEMICONDUCTOR STRUCTURES WITH INTEGRATED CONTROL COMPONENTS 审中-公开
公开(公告)号：WO2003009382A3
公开(公告)日：2003-01-30
申请号：PCT/US2002/013819
申请日：2002-05-02
申请人： MOTOROLA, INC.
发明人： EMRICK, Rudy, M. , ESCALERA, Nestor, J. , FARBER, Bryan, K. , ROCKWELL, Stephen, K. , HOLMES, John, E. , BOSCO, Bruce, A. , FRANSON, Steven, J.
IPC分类号： H01L27/06
摘要： Controlling and controlled components are integrated on a monolithic device. High quality epitaxial layers of monocrystalline materials (26, 132)can be grown overlying monocrystalline substrates (22,110) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24,124) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matchedto both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch betweenthe accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. By providing both compound (1022)and Group IV semiconductor materials (1024,1026) in one integrated circuit, both control and controlled components are integrated on one device.

9. 发明申请

WO2003009382A2 SEMICONDUCTOR STRUCTURES WITH INTEGRATED CONTROL COMPONENTS 审中-公开
标题翻译：具有集成控制组件的半导体结构
公开(公告)号：WO2003009382A2
公开(公告)日：2003-01-30
申请号：PCT/US2002/013819
申请日：2002-05-02
申请人： MOTOROLA, INC.
发明人： EMRICK, Rudy, M. , ESCALERA, Nestor, J. , FARBER, Bryan, K. , ROCKWELL, Stephen, K. , HOLMES, John, E. , BOSCO, Bruce, A. , FRANSON, Steven, J.
IPC分类号： H01L27/06
CPC分类号： H01L21/8258 , H01L27/0605 , H01L27/15 , H01S5/021 , H01S5/0261 , H01S5/042 , H01S2301/173
摘要： Controlling and controlled components are integrated on a monolithic device. High quality epitaxial layers of monocrystalline materials (26, 132)can be grown overlying monocrystalline substrates (22,110) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24,124) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matchedto both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch betweenthe accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. By providing both compound (1022)and Group IV semiconductor materials (1024,1026) in one integrated circuit, both control and controlled components are integrated on one device.
摘要翻译：控制和受控组件集成在单片设备上。通过形成用于生长单晶层的顺应性衬底，可以将单晶材料（26,132）的高质量外延层生长在覆盖单晶衬底（22,110）（例如大硅晶片）上。容纳缓冲层（24,124）包括通过硅氧化物的非晶界面层（28）与硅晶片间隔开的单晶氧化物层。非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。容纳缓冲层与下面的硅晶片和上覆的单晶材料层进行晶格匹配。通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。通过在一个集成电路中提供化合物（1022）和第IV族半导体材料（1024,1026），控制和受控部件都集成在一个器件上。

10. 发明申请

WO2003056656A1 SPIRAL BALUN 审中-公开
标题翻译：螺旋巴伦
公开(公告)号：WO2003056656A1
公开(公告)日：2003-07-10
申请号：PCT/US2002/039956
申请日：2002-12-13
申请人： MOTOROLA, INC.
发明人： ESCALERA, Nestor, J. , EMRICK, Rudy, M.
IPC分类号： H01P5/10
CPC分类号： H01P5/10 , H03H7/42
摘要： A monolithically integrable spiral balun (20) comprises a first transmission line (26) forming a spiral that winds in a first direction and has a first end coupled to receive an input signal. A second transmission line forms a second spiral that winds in a second direction and has a first end and has a second end electrically coupled to the second end of the first transmission line. The third transmission line (22) forms a third spiral that interleaves the first spiral and winds in the second direction and has a first end for providing a first output and a second end for coupling to a first potential. A fourth transmission line (44) forms a fourth spiral that interleaves the second transmission line and winds in the first direction and has a first end for providing a second output and a second end for coupling to a second potential.
摘要翻译：单片可积分的螺旋平衡不平衡变换器（20）包括形成螺旋的第一传输线（26），所述第一传输线（26）在第一方向上卷绕并具有耦合以接收输入信号的第一端。第二传输线形成在第二方向上卷绕并具有第一端并具有电耦合到第一传输线的第二端的第二端的第二螺旋。第三传输线（22）形成第三螺旋，其交错第一螺旋并沿第二方向吹风，并具有用于提供第一输出的第一端和用于耦合到第一电位的第二端。第四传输线（44）形成第四螺旋线，其交错第二传输线并在第一方向上卷绕，并具有用于提供第二输出的第一端和用于耦合到第二电位的第二端。

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