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1. 发明申请

WO2008068616A8 STACKED COLOUR PHOTOSENSITIVE STRUCTURE 审中-公开
标题翻译：堆叠颜色感光结构
公开(公告)号：WO2008068616A8
公开(公告)日：2008-10-16
申请号：PCT/IB2007003906
申请日：2007-12-05
申请人： MILANO POLITECNICO , LONGONI ANTONIO , ZARAGA FEDERICO , LANGFELDER GIACOMO
发明人： LONGONI ANTONIO , ZARAGA FEDERICO , LANGFELDER GIACOMO
IPC分类号： H01L27/146 , H01L31/02 , H01L31/10
CPC分类号： H01L27/14647 , H01L31/02024 , H01L31/10
摘要： There is described a structure which is photosensitive to the colour of light radiation; said structure being formed by a semiconductor substrate (1) having a first type of conductivity and the substrate is adapted to generate a different distribution of carriers upon incidence of a light radiation as the depth varies as a function of the at least two wave lengths of light radiation. The structure comprises at least one first (2, 11) and one second element (2, 12, 13), both arranged in the substrate and adapted to collect the generated carriers; both the first (2, 11) and the second (2, 12, 13) element being adapted to generate first and second electrical signals (Ib, Ig, Ir) as a response to the amount of collected carriers. The structure comprises means (11-13, V1-V3) adapted to generate an electrical field (Eo) orthogonal to the upper surface of the substrate and further means (11-13, V1-V3) adapted to generate an electrical field (Et) transversal to the structure and parallel to its upper surface; said means (11-13, V1-V3) in combination with said further means (11-13, V1-V3) are adapted to generate a resulting electrical field such as to determine different trajectories (31-33) for the carriers within the substrate as a function of the at least two wave lengths of the incident light radiation. The trajectories are directed towards the first element (2, 11) or towards the second element (2, 12, 13).
摘要翻译：描述了对光辐射的颜色感光的结构; 所述结构由具有第一类型导电性的半导体衬底（1）形成，并且所述衬底适于随着随着所述至少两个波长的函数的深度变化而在光辐射入射时产生不同的载流子分布光辐射。该结构包括至少一个第一（2,11）和一个第二元件（2,12,13），两个布置在衬底中并且适于收集所生成的载体; 第一（2,11）和第二（2,13,13）元件都适于产生第一和第二电信号（Ib，Ig，Ir）作为对所收集的载体量的响应。该结构包括适于产生与衬底的上表面正交的电场（Eo）的装置（11-13，V1-V3），以及适于产生电场的Et（11-13，V1-V3））横向于结构并平行于其上表面; 与所述另外的装置（11-13，V1-V3）组合的所述装置（11-13，V1-V3）适于产生所产生的电场，例如为了确定所述电场内的载波的不同轨迹（31-33）衬底作为入射光辐射的至少两个波长的函数。轨迹指向第一元件（2,11）或朝向第二元件（2,13,13）。

2. 发明申请

WO2008068616A3 STACKED COLOUR PHOTOSENSITIVE STRUCTURE 审中-公开
标题翻译：堆叠颜色感光结构
公开(公告)号：WO2008068616A3
公开(公告)日：2008-07-31
申请号：PCT/IB2007003906
申请日：2007-12-05
申请人： MILANO POLITECNICO , LONGONI ANTONIO , ZARAGA FEDERICO , LANGFELDER GIACOMO
发明人： LONGONI ANTONIO , ZARAGA FEDERICO , LANGFELDER GIACOMO
IPC分类号： H01L27/146 , H01L31/02 , H01L31/10
CPC分类号： H01L27/14647 , H01L31/02024 , H01L31/10
摘要： There is described a structure which is photosensitive to the colour of light radiation; said structure being formed by a semiconductor substrate (1) having a first type of conductivity and the substrate is adapted to generate a different distribution of carriers upon incidence of a light radiation as the depth varies as a function of the at least two wave lengths of light radiation. The structure comprises at least one first (2, 11) and one second element (2, 12, 13)., both arranged in the substrate and adapted to collect th generated carriers; both the first (2, 11) and the second (2, 12, 13) element being adapted to generate first and second electrical signals (Ib, Ig, Ir) as a response to the amount of collected carriers. The structure comprises means (11-13, Vl -V3) adapted to generate an electrical field (Eo) orthogonal to the upper surface of the substrate and further means (11-13, Vl -V3) adapted to generate an electrical field (Et) transversal to the structure and parallel to its upper surface; said means (11-13, Vl -V3) in combination with said further means (11-13, Vl -V3) are adapted to generate a resulting electrical field such as to determine different trajectories (31-33) for the carriers within the substrate as a function of the at least two wave lengths of the incident light radiation. The trajectories are directed towards the first element (2, 11) or towards the second element (2, 12, 13).
摘要翻译：描述了对光辐射的颜色感光的结构; 所述结构由具有第一类型导电性的半导体衬底（1）形成，并且所述衬底适于随着随着所述至少两个波长的函数的深度变化而在光辐射入射时产生不同的载流子分布光辐射。该结构包括至少一个第一（2,11）和一个第二元件（2,13,13），两个布置在衬底中并适于收集所生成的载流子; 第一（2,11）和第二（2,13,13）元件都适于产生第一和第二电信号（Ib，Ig，Ir）作为对所收集的载体量的响应。该结构包括适于产生与衬底的上表面正交的电场（Eo）的装置（11-13，V1-V3），以及适于产生电场的Et（11-13，V1- -V3））横向于结构并平行于其上表面; 与所述另外的装置（11-13，V1-V3）组合的所述装置（11-13，V1 -V3）适于产生所得到的电场，例如为了确定所述电子装置内的载体的不同轨迹（31-33）衬底作为入射光辐射的至少两个波长的函数。轨迹指向第一元件（2,11）或朝向第二元件（2,13,13）。

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