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    • 2. 发明申请
    • STACKED COLOUR PHOTOSENSITIVE STRUCTURE
    • 堆叠颜色感光结构
    • WO2008068616A8
    • 2008-10-16
    • PCT/IB2007003906
    • 2007-12-05
    • MILANO POLITECNICOLONGONI ANTONIOZARAGA FEDERICOLANGFELDER GIACOMO
    • LONGONI ANTONIOZARAGA FEDERICOLANGFELDER GIACOMO
    • H01L27/146H01L31/02H01L31/10
    • H01L27/14647H01L31/02024H01L31/10
    • There is described a structure which is photosensitive to the colour of light radiation; said structure being formed by a semiconductor substrate (1) having a first type of conductivity and the substrate is adapted to generate a different distribution of carriers upon incidence of a light radiation as the depth varies as a function of the at least two wave lengths of light radiation. The structure comprises at least one first (2, 11) and one second element (2, 12, 13), both arranged in the substrate and adapted to collect the generated carriers; both the first (2, 11) and the second (2, 12, 13) element being adapted to generate first and second electrical signals (Ib, Ig, Ir) as a response to the amount of collected carriers. The structure comprises means (11-13, V1-V3) adapted to generate an electrical field (Eo) orthogonal to the upper surface of the substrate and further means (11-13, V1-V3) adapted to generate an electrical field (Et) transversal to the structure and parallel to its upper surface; said means (11-13, V1-V3) in combination with said further means (11-13, V1-V3) are adapted to generate a resulting electrical field such as to determine different trajectories (31-33) for the carriers within the substrate as a function of the at least two wave lengths of the incident light radiation. The trajectories are directed towards the first element (2, 11) or towards the second element (2, 12, 13).
    • 描述了对光辐射的颜色感光的结构; 所述结构由具有第一类型导电性的半导体衬底(1)形成,并且所述衬底适于随着随着所述至少两个波长的函数的深度变化而在光辐射入射时产生不同的载流子分布 光辐射。 该结构包括至少一个第一(2,11)和一个第二元件(2,12,13),两个布置在衬底中并且适于收集所生成的载体; 第一(2,11)和第二(2,13,13)元件都适于产生第一和第二电信号(Ib,Ig,Ir)作为对所收集的载体量的响应。 该结构包括适于产生与衬底的上表面正交的电场(Eo)的装置(11-13,V1-V3),以及适于产生电场的Et(11-13,V1-V3) )横向于结构并平行于其上表面; 与所述另外的装置(11-13,V1-V3)组合的所述装置(11-13,V1-V3)适于产生所产生的电场,例如为了确定所述电场内的载波的不同轨迹(31-33) 衬底作为入射光辐射的至少两个波长的函数。 轨迹指向第一元件(2,11)或朝向第二元件(2,13,13)。
    • 4. 发明申请
    • 半導体装置およびその製造方法
    • 半导体器件及其制造方法
    • WO2007032165A1
    • 2007-03-22
    • PCT/JP2006/315837
    • 2006-08-10
    • ソニー株式会社荒井 千広
    • 荒井 千広
    • H01L31/10H01L21/76H01L21/761H01L21/762H01L27/12H01L27/146
    • H01L27/1443H01L21/76283H01L27/1203H01L27/14H01L27/1446H01L31/02024
    •  半導体基板(11)上に複数のフォトダイオード(20)を有する半導体装置(1)であって、複数のフォトダイオード(20(20a、20b))のカソード(22)と共通のアノード(21)とが半導体基板(11)と電気的に独立して形成されていて、複数のフォトダイオード(20)は共通のアノード(21)と複数の分離されたカソード(22)を有し、共通のアノード(21)からの出力を複数に分割されたフォトダイオード(20)の加算出力と等価に扱う、または複数のフォトダイオードは共通のカソードと複数の分離されたアノードを有し、共通のカソードからの出力を複数に分割されたフォトダイオードの加算出力と等価に扱うものである。フォトダイオードのアノードとカソードとを基板から電気的に完全分離することで、ノイズ特性の低減、クロストークの低減を可能とする。
    • 半导体器件(1)在半导体衬底(11)上具有多个光电二极管(20)。 光电二极管(20(20a,20b))具有与半导体衬底(11)电独立形成的阴极(22)和公共阳极(21)。 在具有公共阳极(21)和分离的阴极(22)的光电二极管中,来自公共阳极(21)的输出被处理为等于分离的光电二极管(20)的输出的总和。 或者,多个光电二极管具有公共阴极和多个分离的阳极,并且来自公共阴极的输出被视为等于分离的光电二极管的输出的总和。 光电二极管的阳极和阴极与衬底完全隔离,从而可以降低噪声和串扰。
    • 8. 发明申请
    • DETECTOR FOR OPTICALLY DETECTING AT LEAST ONE OBJECT
    • 至少光学检测一个物体的探测器
    • WO2017174514A1
    • 2017-10-12
    • PCT/EP2017/057867
    • 2017-04-03
    • TRINAMIX GMBH
    • SEND, RobertBRUDER, IngmarLUNGENSCHMIED, ChristophHERMES, WilfriedVALOUCH, Sebastian
    • H01L31/02H01L31/101H01L31/105G01S17/46G01S7/481
    • H01L31/02024G01S7/4814G01S7/4816G01S17/46H01L27/14665H01L31/101H01L31/1016H01L31/1055
    • A detector for determining a position of at least one object, in particular for 3D-sensing concepts, is disclosed. The detector comprises a longitudinal optical sensor (110) for determining a longitudinal position of an object by a light beam traveling from the object to the detector and a transversal optical detector (112) which may be designed as an imaging device or a position sensitive detector. The longitudinal sensor (110) has at least two PN structures or PIN structures (138, 140). Each of the PN structures or PIN structures is located between two electrode layers (144), thereby forming photodiodes (146) having a longitudinal sensor region (148) each. Longitudinal sensor signals from the photodiodes (146) are, given the same total power of illumination, are dependent on a beam cross-section of the light beam in the longitudinal sensor regions (148). As an alternative, instead of the transversal optical detector (112) the photodiodes (146) of the longitudinal optical sensor (110) may be adapted to operate as one-dimensional position sensitive detectors each, for determining a transversal x-coordinate and a transversal y-coordinate, respectively.
    • 公开了一种用于确定至少一个对象的位置的检测器,尤其是用于3D感测概念的检测器。 该检测器包括用于通过从物体行进到检测器的光束来确定物体的纵向位置的纵向光学传感器(110)以及可以被设计为成像设备或位置敏感检测器(112)的横向光学检测器(112) 。 纵向传感器(110)具有至少两个PN结构或PIN结构(138,140)。 每个PN结构或PIN结构位于两个电极层(144)之间,由此形成各自具有纵向传感器区域(148)的光电二极管(146)。 假定相同的总照明功率,来自光电二极管(146)的纵向传感器信号取决于纵向传感器区域(148)中光束的光束横截面。 作为替代,纵向光学传感器(110)的光电二极管(146)可以适于作为一维位置敏感检测器来操作,以用于确定横向x坐标和横向x坐标 y坐标。
    • 9. 发明申请
    • SELF-BALANCING POSITION SENSITIVE DETECTOR
    • 自平衡位置敏感检测器
    • WO2016209642A1
    • 2016-12-29
    • PCT/US2016/036894
    • 2016-06-10
    • THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK
    • CASTRACANE, JamesTOKRANOVA, NatalyaLYDECKER, Leigh
    • H01L31/08H01L31/10H01L31/02H01L31/0288
    • H01L31/02024G01J1/44G01J2001/446H01L31/02005H01L31/022408H01L31/09H01L31/101H01L31/147H01L31/164
    • A self-balancing optical position sensitive detector includes a pair of spaced apart, parallel, longitudinally extending doped regions 12, 14 on a first surface on a front side of a substrate 16 of opposite doping type with contact pads 18, 20 on the front side at respective ends of a first doped region 12 of the pair. A voltage source +V applies a potential difference between the contact pads of the first doped region. On the front side, a contact pad 22 of the second doped region 14 of the pair provides an analog output signal representative of a longitudinal position of a center of gravity of an incident light pattern 24 along the doped regions without external circuitry processing the output signal to obtain a readout of the longitudinal position. A resistive line 28 may directly overly, abut and be in contact with at least a portion of the first doped region. A conductive line 30 may directly overly, abut and be in contact with at least a portion of the second doped region. No backside contact or processing of the substrate is required or employed.
    • 自平衡光学位置敏感检测器包括一对间隔开的,平行的纵向延伸的掺杂区域12,14,该掺杂区域12,14位于相反掺杂类型的衬底16的前侧上的第一表面上,其前侧具有接触焊盘18,20 在该对的第一掺杂区域12的各个端部。 电压源+ V施加第一掺杂区的接触焊盘之间的电位差。 在前侧,该对的第二掺杂区域14的接触焊盘22提供表示沿着掺杂区域的入射光图案24的重心的纵向位置的模拟输出信号,而没有外部电路处理输出信号 以获得纵向位置的读数。 电阻线28可以直接与第一掺杂区域的至少一部分接触,邻接并与其接触。 导线30可以直接与第二掺杂区域的至少一部分交叠,邻接和接触。 不需要或使用衬底的背面接触或加工。