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    • 1. 发明申请
    • STACKED COLOUR PHOTOSENSITIVE STRUCTURE
    • 堆叠颜色感光结构
    • WO2008068616A8
    • 2008-10-16
    • PCT/IB2007003906
    • 2007-12-05
    • MILANO POLITECNICOLONGONI ANTONIOZARAGA FEDERICOLANGFELDER GIACOMO
    • LONGONI ANTONIOZARAGA FEDERICOLANGFELDER GIACOMO
    • H01L27/146H01L31/02H01L31/10
    • H01L27/14647H01L31/02024H01L31/10
    • There is described a structure which is photosensitive to the colour of light radiation; said structure being formed by a semiconductor substrate (1) having a first type of conductivity and the substrate is adapted to generate a different distribution of carriers upon incidence of a light radiation as the depth varies as a function of the at least two wave lengths of light radiation. The structure comprises at least one first (2, 11) and one second element (2, 12, 13), both arranged in the substrate and adapted to collect the generated carriers; both the first (2, 11) and the second (2, 12, 13) element being adapted to generate first and second electrical signals (Ib, Ig, Ir) as a response to the amount of collected carriers. The structure comprises means (11-13, V1-V3) adapted to generate an electrical field (Eo) orthogonal to the upper surface of the substrate and further means (11-13, V1-V3) adapted to generate an electrical field (Et) transversal to the structure and parallel to its upper surface; said means (11-13, V1-V3) in combination with said further means (11-13, V1-V3) are adapted to generate a resulting electrical field such as to determine different trajectories (31-33) for the carriers within the substrate as a function of the at least two wave lengths of the incident light radiation. The trajectories are directed towards the first element (2, 11) or towards the second element (2, 12, 13).
    • 描述了对光辐射的颜色感光的结构; 所述结构由具有第一类型导电性的半导体衬底(1)形成,并且所述衬底适于随着随着所述至少两个波长的函数的深度变化而在光辐射入射时产生不同的载流子分布 光辐射。 该结构包括至少一个第一(2,11)和一个第二元件(2,12,13),两个布置在衬底中并且适于收集所生成的载体; 第一(2,11)和第二(2,13,13)元件都适于产生第一和第二电信号(Ib,Ig,Ir)作为对所收集的载体量的响应。 该结构包括适于产生与衬底的上表面正交的电场(Eo)的装置(11-13,V1-V3),以及适于产生电场的Et(11-13,V1-V3) )横向于结构并平行于其上表面; 与所述另外的装置(11-13,V1-V3)组合的所述装置(11-13,V1-V3)适于产生所产生的电场,例如为了确定所述电场内的载波的不同轨迹(31-33) 衬底作为入射光辐射的至少两个波长的函数。 轨迹指向第一元件(2,11)或朝向第二元件(2,13,13)。
    • 2. 发明申请
    • STACKED COLOUR PHOTOSENSITIVE STRUCTURE
    • 堆叠颜色感光结构
    • WO2008068616A3
    • 2008-07-31
    • PCT/IB2007003906
    • 2007-12-05
    • MILANO POLITECNICOLONGONI ANTONIOZARAGA FEDERICOLANGFELDER GIACOMO
    • LONGONI ANTONIOZARAGA FEDERICOLANGFELDER GIACOMO
    • H01L27/146H01L31/02H01L31/10
    • H01L27/14647H01L31/02024H01L31/10
    • There is described a structure which is photosensitive to the colour of light radiation; said structure being formed by a semiconductor substrate (1) having a first type of conductivity and the substrate is adapted to generate a different distribution of carriers upon incidence of a light radiation as the depth varies as a function of the at least two wave lengths of light radiation. The structure comprises at least one first (2, 11) and one second element (2, 12, 13)., both arranged in the substrate and adapted to collect th generated carriers; both the first (2, 11) and the second (2, 12, 13) element being adapted to generate first and second electrical signals (Ib, Ig, Ir) as a response to the amount of collected carriers. The structure comprises means (11-13, Vl -V3) adapted to generate an electrical field (Eo) orthogonal to the upper surface of the substrate and further means (11-13, Vl -V3) adapted to generate an electrical field (Et) transversal to the structure and parallel to its upper surface; said means (11-13, Vl -V3) in combination with said further means (11-13, Vl -V3) are adapted to generate a resulting electrical field such as to determine different trajectories (31-33) for the carriers within the substrate as a function of the at least two wave lengths of the incident light radiation. The trajectories are directed towards the first element (2, 11) or towards the second element (2, 12, 13).
    • 描述了对光辐射的颜色感光的结构; 所述结构由具有第一类型导电性的半导体衬底(1)形成,并且所述衬底适于随着随着所述至少两个波长的函数的深度变化而在光辐射入射时产生不同的载流子分布 光辐射。 该结构包括至少一个第一(2,11)和一个第二元件(2,13,13),两个布置在衬底中并适于收集所生成的载流子; 第一(2,11)和第二(2,13,13)元件都适于产生第一和第二电信号(Ib,Ig,Ir)作为对所收集的载体量的响应。 该结构包括适于产生与衬底的上表面正交的电场(Eo)的装置(11-13,V1-V3),以及适于产生电场的Et(11-13,V1- -V3) )横向于结构并平行于其上表面; 与所述另外的装置(11-13,V1-V3)组合的所述装置(11-13,V1 -V3)适于产生所得到的电场,例如为了确定所述电子装置内的载体的不同轨迹(31-33) 衬底作为入射光辐射的至少两个波长的函数。 轨迹指向第一元件(2,11)或朝向第二元件(2,13,13)。
    • 3. 发明申请
    • PHOTO-DETECTOR AND METHOD FOR DETECTING AN OPTICAL RADIATION
    • 用于检测光学辐射的光电检测器和方法
    • WO2010112400A1
    • 2010-10-07
    • PCT/EP2010/053922
    • 2010-03-25
    • POLITECNICO DI MILANOZARAGA, FedericoLANGFELDER, Giacomo
    • ZARAGA, FedericoLANGFELDER, Giacomo
    • H04N9/04H04N9/73H01L27/146
    • H04N9/045H01L31/102H04N9/735H04N2209/047
    • A system for the acquisition of an image is described. The system comprises a photo-detector of a radiation, the photo-detector implementing at least one tunable spectral response indicating the sensitivity of the photo-detector as a function of the wavelength. The photo-detector includes means for receiving at least one configuration signal controlling the tuning of at least part of the shape of the at least one spectral response. The system further comprises a control module for receiving an identification signal indicating the spectral intensity of a source of light, for detecting that the shape of the source spectral intensity in at least one spectrum portion is different from the shape of a reference spectral intensity in the at least one spectrum portion, and for changing the at least one configuration signal in order to change the shape of the at least one spectral response in the at least one spectrum portion as a function of the difference between the shape of the source spectral intensity and the shape of the reference spectral intensity in the at least one spectrum portion.
    • 描述用于获取图像的系统。 该系统包括辐射的光检测器,光电检测器实现至少一个可调光谱响应,其指示光检测器的灵敏度作为波长的函数。 光检测器包括用于接收控制至少一个光谱响应的形状的至少部分的调谐的至少一个配置信号的装置。 该系统还包括控制模块,用于接收指示光源的光谱强度的识别信号,用于检测至少一个光谱部分中的源光谱强度的形状不同于 至少一个频谱部分,并且用于改变所述至少一个配置信号,以便改变所述至少一个频谱部分中的所述至少一个频谱响应的形状,作为所述源频谱强度的形状和 在至少一个光谱部分中的参考光谱强度的形状。
    • 4. 发明申请
    • LUMINOUS RADIATION COLOUR PHOTOSENSITIVE STRUCTURE
    • LUMINOUS辐射色彩光敏结构
    • WO2008068616A2
    • 2008-06-12
    • PCT/IB2007/003906
    • 2007-12-05
    • POLITECNICO DI MILANOLONGONI, AntonioZARAGA, FedericoLANGFELDER, Giacomo
    • LONGONI, AntonioZARAGA, FedericoLANGFELDER, Giacomo
    • H01L27/146
    • H01L27/14647H01L31/02024H01L31/10
    • There is described a structure which is photosensitive to the colour of a light radiation; said structure being formed by a semiconductor substrate (1) having a first type of conductivity and the substrate is adapted to generate a different distribution of carriers upon incidence of a light radiation as the depth varies as a function of the at least one wave length of the light radiation. The structure comprises at least one first (2, 10) and one second element (2, 10), both arranged in the substrate and adapted to collect the generated carriers; both the first (2, 10) ad the second (2, 10) element being adapted to generate first and second electrical signals (Ib, Ig, Ir) as a response to the amount of collected carriers. The structure comprises means (11-13, V1-V3) adapted to generate an electrical field (Eo) orthogonal to the upper surface of the substrate and further means (11-13, V1-V3) adapted to generate an electrical field (Et) transversal to the structure and parallel to its upper surface; said means (11, 13, V1-V3) in combination with said further means (11, 13, V1 -V3) are adapted to generate a resulting electrical field such as to determine different trajectories (31-33) for the carriers within the substrate as a function of the at least one wave length of the incident light radiation. The trajectories are directed towards the first element (2, 10) or towards the second element (2, 10).
    • 描述了对光辐射的颜色感光的结构; 所述结构由具有第一类型导电性的半导体衬底(1)形成,并且所述衬底适于随着随着所述至少一个波长的函数的深度变化而在光辐射入射时产生载流子的不同分布 光辐射。 所述结构包括至少一个第一(2,10)和一个第二元件(2,10),两者均设置在所述基板中并适于收集所生成的载体; 第一(2,10)和第二(2,10)元件适于产生第一和第二电信号(Ib,Ig,Ir)作为对所收集的载体的量的响应。 该结构包括适于产生与衬底的上表面正交的电场(Eo)的装置(11-13,V1-V3),以及适于产生电场的Et(11-13,V1-V3) )横向于结构并平行于其上表面; 与所述另外的装置(11,13,V1 -V3)组合的所述装置(11,13,V1-V3)适于产生所得到的电场,例如为了确定所述电气装置内的载体的不同轨迹(31-33) 衬底作为入射光辐射的至少一个波长的函数。 轨迹指向第一元件(2,10)或朝向第二元件(2,10)。