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1. 发明申请

WO2014149047A1 SIC POWER VERTICAL DMOS WITH INCREASED SAFE OPERATING AREA 审中-公开
标题翻译： SIC功率垂直DMOS具有增加的安全操作区域
公开(公告)号：WO2014149047A1
公开(公告)日：2014-09-25
申请号：PCT/US2013/033330
申请日：2013-03-21
申请人： MICROSEMI CORPORATION
发明人： SDRULLA, Dumitru , ODEKIRK, Bruce , VANDERBERG, Marc
IPC分类号： H01L29/78 , H01L29/06 , H01L29/16
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0878 , H01L29/1033 , H01L29/1095 , H01L29/1608 , H01L29/42368 , H01L29/66068 , H01L29/7803
摘要： A SiC Power Semiconductor device of the Field Effect Type (MOSFET, IGBT or the like) with "muted" channel conduction in some cells and with negative temperature coefficient of channel mobility, allowing an optimized thermal management of the cells for increased Safe Operating Area is described. Controlling the location of the Zero Temperature Crossover Point (ZTCP) in relationship to the drain current is achieved by the partition between the "active" and "inactive" ("muted") channels and by adjusting the mobility of the carriers in the channel for the temperature range of interest. The "Thermal management" is realized by surrounding the "active" cells/fingers with "inactive" ones and the "negative" feedback of the drain/collector current due to local increase of the gate bias is achieved by implementing in-situ "ballast" resistors inside of each source contact, among other possibilities.
摘要翻译：在一些电池中具有“静音”通道导通和沟道迁移率的负温度系数的场效应型（MOSFET，IGBT等）的SiC功率半导体器件，允许用于增加安全工作面积的电池的优化热管理是描述。通过“有源”和“无效”（“静音”）通道之间的分区，并通过调整通道中的载波的移动性来实现与漏极电流相关的零温度交叉点（ZTCP）的位置控制感兴趣的温度范围。 “热管理”是通过围绕“活动”电池/手指“无效”来实现的，并且由于栅极偏置的局部增加引起的漏极/集电极电流的“负”反馈是通过实施原位“镇流器 “每个源接触器内部的电阻，以及其他可能性。

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